MJL21193

MJL21193(PNP), MJL21194(NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • • • • • Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are Pb−Free and are RoHS Compliant* 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS NPN PNP MAXIMUM RATINGS Rating COLLECTOR 2, 4 Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5 Vdc Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc IC 16 Adc ICM 30 Adc Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous IB 5 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 200 1.43 W W/_C TJ, Tstg −65 to + 150 _C Operating and Storage Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2% THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 0.7 _C/W COLLECTOR 2, 4 1 BASE 1 BASE EMITTER 3 EMITTER 3 MARKING DIAGRAM 1 MJL2119x AYYWWG 2 3 TO−264 CASE 340G STYLE 2 x A YY WW G 3 1 EMITTER BASE 2 COLLECTOR = 3 or 4 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† MJL21193G TO−264 (Pb−Free) 25 Units / Rail MJL21194G TO−264 (Pb−Free) 25 Units / Rail Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 7 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MJL21193/D MJL21193 (PNP), MJL21194 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 250 − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − − 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 100 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − − 100 mAdc 4.0 2.25 − − − − 25 8 − − 75 − − − 2.2 − − − − 1.4 4 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) % − 0.8 − − 0.08 − fT 4 − − MHz Cob − − 500 pF NPN MJL21194 f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT GAIN BANDWIDTH PRODUCT (MHz) PNP MJL21193 6.5 6.0 VCE = 10 V 5.5 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25°C ftest = 1 MHz 1.0 10 8.0 7.0 10 V 6.0 5.0 VCE = 5 V 4.0 3.0 2.0 1.0 0 0.1 IC COLLECTOR CURRENT (AMPS) TJ = 25°C ftest = 1 MHz 1.0 10 IC COLLECTOR CURRENT (AMPS) Figure 2. Typical Current Gain Bandwidth Product Figure 1. Typical Current Gain Bandwidth Product http://onsemi.com 2 MJL21193 (PNP), MJL21194 (NPN) TYPICAL CHARACTERISTICS PNP MJL21193 NPN MJL21194 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 20 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 Figure 4. DC Current Gain, VCE = 20 V PNP MJL21193 NPN MJL21194 1000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 100 Figure 3. DC Current Gain, VCE = 20 V 1000 TJ = 100°C 25°C 100 -25°C TJ = 100°C 25°C 100 -25°C VCE = 5 V 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 10 0.1 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP MJL21193 NPN MJL21194 35 30 25 20 IB = 2 A I C, COLLECTOR CURRENT (A) 1.5 A I C, COLLECTOR CURRENT (A) 1.0 10 IC COLLECTOR CURRENT (AMPS) 1A 15 0.5 A 10 5.0 IB = 2 A 30 1.5 A 25 1A 20 0.5 A 15 10 5.0 TJ = 25°C TJ = 25°C 0 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 25 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 MJL21193 (PNP), MJL21194 (NPN) TYPICAL CHARACTERISTICS PNP MJL21193 NPN MJL21194 2.5 1.4 TJ = 25°C IC/IB = 10 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 3.0 2.0 1.5 1.0 VBE(sat) 0.5 1.2 TJ = 25°C IC/IB = 10 1.0 VBE(sat) 0.8 0.6 0.4 0.2 VCE(sat) VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0 0.1 100 Figure 10. Typical Saturation Voltages PNP MJL21193 NPN MJL21194 10 TJ = 25°C 1.0 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 9. Typical Saturation Voltages VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 0 0.1 VCE = 20 V (SOLID) VCE = 5 V (DASHED) 1.0 10 10 TJ = 25°C VCE = 20 V (SOLID) 1.0 0.1 0.1 100 100 VCE = 5 V (DASHED) 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage 100 IC, COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 1 SEC 10 1.0 0.1 1.0 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area http://onsemi.com 4 MJL21193 (PNP), MJL21194 (NPN) 10000 10000 TC = 25°C C, CAPACITANCE (pF) Cib 1000 Cob 100 0.1 Cib 1000 Cob f(test) = 1 MHz) f(test) = 1 MHz) 1.0 10 100 0.1 100 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJL21193 Typical Capacitance Figure 15. MJL21194 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) C, CAPACITANCE (pF) TC = 25°C 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT -50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5 8.0 W 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−3BPL (TO−264) CASE 340G−02 ISSUE J DATE 17 DEC 2004 SCALE 1:2 Q 0.25 (0.010) −B− M T B −T− M C E U N A R 1 2 L 3 P F 2 PL K W G J H D 3 PL 0.25 (0.010) STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER M T B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q R U W S STYLE 3: PIN 1. GATE 2. SOURCE 3. DRAIN MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.2 REF 4.35 REF 2.2 2.6 3.1 3.5 2.25 REF 6.3 REF 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.411 REF 0.172 REF 0.087 0.102 0.122 0.137 0.089 REF 0.248 REF 0.110 0.125 GENERIC MARKING DIAGRAM* STYLE 4: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER XXXXXX AYYWW XXXXXX A YY WW = Specific Device Code = Location Code = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98ASB42780B TO−3BPL (TO−264) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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