MJD42CG

MJD41C(NPN), MJD42C(PNP) Complementary Power Transistors DPAK for Surface Mount Applications www.onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“1” Suffix) Electrically Similar to Popular TIP41 and TIP42 Series Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS, 20 WATTS COMPLEMENTARY COLLECTOR 2, 4 1 BASE 1 BASE MAXIMUM RATINGS Rating 3 EMITTER Symbol Max Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5 Vdc IC 6 Adc ICM 10 Adc 1 2 Base Current IB 2 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD DPAK CASE 369C STYLE 1 Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range Collector−Emitter Voltage Collector Current − Continuous Collector Current − Peak 20 0.16 W W/°C W 1.75 0.014 W/°C TJ, Tstg −65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. COLLECTOR 2, 4 3 EMITTER 4 4 1 3 2 3 IPAK CASE 369D STYLE 1 MARKING DIAGRAMS AYWW J4xCG AYWW J4xCG DPAK A Y WW J4xC G IPAK = = = = Assembly Location Year Work Week Device Code x = 1 or 2 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. 13 1 Publication Order Number: MJD41C/D MJD41C (NPN), MJD42C (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 71.4 °C/W Min Max Unit 100 − − 50 − 10 − 0.5 30 15 − 75 − 1.5 − 2 3 − 20 − 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = 100 Vdc, VEB = 0) ICES Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS (Note 3) hFE DC Current Gain (IC = 0.3 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) Collector−Emitter Saturation Voltage (IC = 6 Adc, IB = 600 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 6 Adc, VCE = 4 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 4) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe MHz − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. fT = ⎪hfe⎪• ftest. www.onsemi.com 2 MJD41C (NPN), MJD42C (PNP) PD, POWER DISSIPATION (WATTS) TYPICAL CHARACTERISTICS TA 2.5 TC 25 2 20 VCC +30 V +11 V 1.5 0 15 TC TA SURFACE MOUNT 10 0.5 5 0 0 25 50 tr, tf ≤ 10 ns DUTY CYCLE = 1% 75 100 125 150 Figure 2. Switching Time Test Circuit 2 500 300 200 VCE = 2 V TJ = 150°C 100 70 50 0.7 0.5 t, TIME (s) μ 25°C 30 20 0.3 0.2 tr 0.1 0.07 -55°C 10 7 5 0.06 TJ = 25°C VCC = 30 V IC/IB = 10 1 td @ VBE(off) ≈ 5 V 0.05 0.1 0.2 0.3 0.4 0.6 1 2 4 0.03 0.02 0.06 0.1 6 0.2 0.4 0.6 1 2 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain Figure 4. Turn−On Time 1.4 4 6 1.4 IC/IB = 10 VCE = 4 V 1.2 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: MSB5300 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA REVERSE ALL POLARITIES FOR PNP. Figure 1. Power Derating 1.0 0.8 −55°C −40°C 0.6 D1 51 -9 V 1 SCOPE RB T, TEMPERATURE (°C) VBE(ON), BASE−EMITTER VOLTAGE (V) RC 25 ms 25°C 0.4 80°C 0.2 TA = 150°C 0 1.2 1.0 −55°C 0.8 −40°C 0.6 25°C 80°C 0.4 TA = 150°C 0.2 0 0.01 0.1 1 10 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Voltage vs. Collector Current Figure 6. Base Emitter Saturation Voltage vs. Collector Current www.onsemi.com 3 10 MJD41C (NPN), MJD42C (PNP) TYPICAL CHARACTERISTICS 5 1.0 VCE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.9 TA = 150°C IC/IB = 10 0.8 ts 25°C 1 0.7 0.5 t, TIME (s) μ 0.7 0.6 0.5 0.4 0.3 0.2 0.3 tf 0.2 −40°C and −55°C 0.1 0 0.01 0.1 1 10 0.1 0.07 0.05 0.06 0.1 0.2 0.4 0.6 1 2 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (A) 6 300 2 TJ = 25°C TJ = 25°C 200 1.6 IC = 1 A 2.5 A 5A 1.2 0.8 Cib 100 70 Cob 50 0.4 0 10 20 30 50 100 200 300 IB, BASE CURRENT (mA) 500 1000 30 0.5 1 1 0.7 0.5 3 10 2 5 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 10. Capacitance Figure 9. Collector Saturation Region D = 0.5 0.3 0.2 0.2 0.05 0.02 0.03 0.02 0.01 0.01 P(pk) RqJC(t) = r(t) RqJC RqJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.1 0.07 0.05 4 Figure 8. Turn−Off Time C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Collector Emitter Saturation Voltage vs. Collector Current r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 3 2 80°C 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 Figure 11. Thermal Response www.onsemi.com 4 20 30 50 100 200 300 500 1000 MJD41C (NPN), MJD42C (PNP) IC, COLLECTOR CURRENT (AMP) 10 500ms 5 3 2 1ms dc 5ms 1 0.5 0.3 WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.1 0.05 0.03 0.01 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms TC = 25°C SINGLE PULSE TJ = 150°C 1 MJD41C, 42C 2 3 5 7 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Forward Bias Safe Operating Area ORDERING INFORMATION Package Type Package Shipping† MJD41CRLG DPAK (Pb−Free) 369C 1,800 / Tape & Reel MJD41CT4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD41CT4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel MJD42CG DPAK (Pb−Free) 369C 75 Units / Rail MJD42C1G IPAK (Pb−Free) 369D 75 Units / Rail MJD42CRLG DPAK (Pb−Free) 369C 1,800 / Tape & Reel NJVMJD42CRLG* DPAK (Pb−Free) 369C 1,800 / Tape & Reel MJD42CT4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD42CT4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE C SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G DATE 15 DEC 2010 H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− T MARKING DIAGRAMS STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE Discrete YWW xxxxxxxx STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR xxxxxxxxx A lL Y WW DOCUMENT NUMBER: DESCRIPTION: 98AON10528D Integrated Circuits xxxxx ALYWW x = Device Code = Assembly Location = Wafer Lot = Year = Work Week Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. IPAK (DPAK INSERTION MOUNT) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative