MJD31CG

DATA SHEET www.onsemi.com Complementary Power Transistors DPAK For Surface Mount Applications MJD31 (NPN), MJD32 (PNP) SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS COMPLEMENTARY Designed for general purpose amplifier and low speed switching applications. COLLECTOR 2,4 Features • • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves (“1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP31 and TIP32 Series Epoxy Meets UL 94, V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Collector−Emitter Voltage MJD31, MJD32 MJD31C, MJD32C Symbol VCEO Max Unit Vdc 40 100 Collector−Base Voltage MJD31, MJD32 MJD31C, MJD32C VCB Emitter−Base Voltage VEB 5.0 Vdc IC 3.0 Adc ICM 5.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation @ TA = 25°C Derate above 25°C PD Collector Current − Continuous Collector Current − Peak Operating and Storage Junction Temperature Range 1 BASE 3 EMITTER TJ, Tstg Vdc 40 100 W W/°C 15 0.12 W W/°C 1.56 0.012 −65 to + 150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM M3 V 3 EMITTER 4 4 1 2 3 MAXIMUM RATINGS Rating 1 BASE COLLECTOR 2,4 1 DPAK CASE 369C STYLE 1 2 3 IPAK CASE 369D STYLE 1 MARKING DIAGRAMS AYWW J3xxG DPAK A Y WW xx G YWW J3xxG IPAK = Site Code = Year = Work Week = 1, 1C, 2, or 2C = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 8.3 °C/W Thermal Resistance, Junction−to−Ambient* RqJA 80 °C/W TL 260 °C Lead Temperature for Soldering Purposes *These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2016 June, 2022 − Rev. 18 1 Publication Order Number: MJD31/D MJD31 (NPN), MJD32 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJD31, MJD32 MJD31C, MJD32C VCEO(sus) Vdc 40 100 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) MJD31, MJD32 (VCE = 60 Vdc, IB = 0) MJD31C, MJD32C ICEO Collector Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − − mAdc − 50 − 50 − 20 − 1 25 10 − 50 − 1.2 − 1.8 3 − 20 − mAdc mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 1 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) Collector−Emitter Saturation Voltage (IC = 3 Adc, IB = 375 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 3 Adc, VCE = 4 Vdc) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT = ⎪hfe⎪• ftest. www.onsemi.com 2 MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS VCC +30 V PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 +11 V RB SCOPE 0 1.5 15 TA (SURFACE MOUNT) TC 1 10 0.5 5 0 0 25 tr, tf ≤ 10 ns DUTY CYCLE = 1% 50 75 100 T, TEMPERATURE (°C) 125 150 Figure 2. Switching Time Test Circuit IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C ts′ 1 t, TIME (s) μ 0.3 3 2 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V 0.7 0.5 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA REVERSE ALL POLARITIES FOR PNP. 2 1 D1 51 -9 V Figure 1. Power Derating t, TIME (s) μ RC 25 ms tr @ VCC = 10 V tf @ VCC = 30 V 0.7 0.5 0.3 0.2 tf @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 100 td @ VBE(off) = 2 V 0.05 0.07 0.1 0.3 0.5 0.7 0.1 0.07 0.05 0.03 0.03 1 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Turn−On Time Figure 4. Turn−Off Time 2 Duty Cycle = 0.5 0.2 RqJA (°C/W) 10 0.1 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (sec) Figure 5. Thermal Response www.onsemi.com 3 1 10 100 1000 3 MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN) 1000 10 1 0.01 0.6 VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) −55°C 0.1 1 10 25°C 100 10 1 0.01 150°C 0.2 25°C 0.1 −55°C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 1.2 1.1 0.9 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.01 0.1 1 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 Figure 9. Base−Emitter Saturation Voltage VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE = 5 V IC/IB = 10 1.0 Figure 8. Collector−Emitter Saturation Voltage VBE(on), BASE−EMITTER ON VOLTAGE (V) 10 Figure 7. DC Current Gain at VCE = 2 V 0.3 0.2 0.001 1 Figure 6. DC Current Gain at VCE = 4 V 0.4 1.1 0.1 IC, COLLECTOR CURRENT (A) 0.5 1.2 −55°C IC, COLLECTOR CURRENT (A) IC/IB = 10 0 0.001 VCE = 2 V 150°C hFE, DC CURRENT GAIN 25°C 100 1000 VCE = 4 V VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 10 2 TA = 25°C 1.6 1.2 100 mA 500 mA 0.8 IC = 3 A 1A 0.4 10 mA 0 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 10. Base-Emitter “On” Voltage Figure 11. Collector Saturation Region www.onsemi.com 4 1000 MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN) Cib 100 Cob 10 100 fT, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) TA = 25°C VCE = 5 V TA = 25°C 10 1 0.001 1 0.1 1 10 VR, REVERSE VOLTAGE (V) 100 Figure 12. Capacitance 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 13. Current−Gain−Bandwidth Product 10 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 1000 1s 100 ms 10 ms 1 ms 500 ms 1 0.1 0.01 Single Pulse Test @ TA = 25°C 0.001 0.1 1 0.01 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Safe Operating Area www.onsemi.com 5 10 MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP) 1000 hFE, DC CURRENT GAIN 100 −55°C 10 1 0.01 0.9 1.4 150°C 0.5 0.4 0.3 0.2 25°C 0.1 0 0.001 0.01 0.1 1 10 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. Collector−Emitter Saturation Voltage Figure 18. Base−Emitter Saturation Voltage 1.0 0.9 150°C 25°C 0.6 −55°C 0.3 0.2 0.001 1 IC/IB = 10 0.2 0.001 10 VCE = 5 V 0.4 0.1 Figure 16. DC Current Gain at VCE = 2 V 0.6 0.5 0.01 Figure 15. DC Current Gain at VCE = 4 V −55°C 0.7 10 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.8 −55°C 1 10 0.7 1.1 100 IC, COLLECTOR CURRENT (A) 0.8 1.2 VBE(on), BASE−EMITTER ON VOLTAGE (V) 1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) 1 0.1 VCE = 2 V 25°C 150°C 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 1000 VCE = 4 V 25°C 150°C 2 TA = 25°C 500 mA 1.6 100 mA 1.2 1A IC = 3 A 0.8 0.4 10 mA 0 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Figure 20. Collector Saturation Region Figure 19. Base−Emitter “On” Voltage www.onsemi.com 6 1000 MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS Cib 100 Cob 10 1 0.1 1 10 100 fT, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) TA = 25°C VCE = 5 V TA = 25°C 10 1 0.001 100 VR, REVERSE VOLTAGE (V) 0.01 1 Figure 22. Current−Gain−Bandwidth Product 10 1s 100 ms 10 ms 1 ms 500 ms 1 0.1 0.01 Single Pulse Test @ TA = 25°C 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 21. Capacitance IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 1000 0.1 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 23. Safe Operating Area www.onsemi.com 7 10 MJD31 (NPN), MJD32 (PNP) ORDERING INFORMATION Package Type Package Shipping† MJD31CG DPAK (Pb−Free) 369C 75 Units / Rail NJVMJD31CG* DPAK (Pb−Free) 369C 75 Units / Rail MJD31C1G IPAK (Pb−Free) 369D 75 Units / Rail MJD31CRLG DPAK (Pb−Free) 369C 1,800 / Tape & Reel NJVMJD31CRLG* DPAK (Pb−Free) 369C 1,800 / Tape & Reel MJD31CT4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD31CT4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel MJD31T4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD31T4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel MJD32CG DPAK (Pb−Free) 369C 75 Units / Rail NJVMJD32CG* DPAK (Pb−Free) 369C 75 Units / Rail MJD32CRLG DPAK (Pb−Free) 369C 1,800 / Tape & Reel MJD32CT4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD32CT4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel MJD32RLG DPAK (Pb−Free) 369C 1,800 / Tape & Reel MJD32T4G DPAK (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD32T4G* DPAK (Pb−Free) 369C 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE C SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G DATE 15 DEC 2010 H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− T MARKING DIAGRAMS STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE Discrete YWW xxxxxxxx STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR xxxxxxxxx A lL Y WW DOCUMENT NUMBER: DESCRIPTION: 98AON10528D Integrated Circuits xxxxx ALYWW x = Device Code = Assembly Location = Wafer Lot = Year = Work Week Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. IPAK (DPAK INSERTION MOUNT) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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