MJD5731T4

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features http://onsemi.com • PNP Complements to the MJD47 thru MJD50 Series • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS Symbol Max Unit VCEO 350 Vdc VEB 5 Vdc IC 1.0 Adc Collector Current − Peak ICM 3.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 15 0.12 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.56 0.0125 W W/°C Unclamped Inductive Load Energy (See Figure 10) E 20 mJ TJ, Tstg −55 to +150 °C 1 2 ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V DPAK CASE 369C STYLE 1 Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Operating and Storage Junction Temperature Range COLLECTOR 2, 4 1 BASE 3 EMITTER 4 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. MARKING DIAGRAM AYWW J 5731G THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 8.33 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W TL 260 °C Lead Temperature for Soldering 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. A Y WW J5731 G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device MJD5731T4G Package Shipping† DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 5 1 Publication Order Number: MJD5731/D MJD5731 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 350 − − 0.1 − 0.01 − 0.5 30 10 175 − − 1.0 − 1.5 10 − 25 − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 250 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = 350 Vdc, VBE = 0) ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) fT Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz − 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 hFE , DC CURRENT GAIN VCE = 10 V 100 TJ = 150°C 50 25°C 30 -55°C 20 10 5.0 3.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 Figure 1. DC Current Gain 1.4 1.2 1 TJ = 25°C 0.8 0.6 -55°C 0.4 150°C 0.2 VCE(sat)) @ IC/IB = 5.0 0 0.02 0.03 0.05 0.1 0.5 0.2 0.3 IC, COLLECTOR CURRENT (AMPS) 1.0 Figure 2. Collector−Emitter Saturation Voltage http://onsemi.com 2 2.0 MJD5731 1.4 1.2 1.2 V, VOLTAGE (VOLTS) 1.4 TJ = - 55°C 1.0 V, VOLTAGE (V) VBE(sat) @ IC/IB = 5.0 0.8 25°C 0.6 150°C 1 VBE(sat) @ IC/IB = 5 V 0.8 0.4 0.4 0.2 0.2 0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 0 0.02 2.0 VBE(on) @ VCE = 4 V 0.6 IC, COLLECTOR CURRENT (AMPS) TJ = 25°C VCE(sat) @ IC/IB = 5 V 0.1 0.2 0.4 0.6 0.04 0.06 IC, COLLECTOR CURRENT (AMPS) Figure 3. Base−Emitter Voltage There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 5.0 100 ms 1.0ms 1.0 500 ms dc TC = 25°C 0.5 0.2 0.1 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.05 0.02 0.01 5.0 2 Figure 4. “On” Voltages 10 2.0 1 100 10 20 30 50 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Forward Bias Safe Operating Area 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 0.1 RqJC(t) = r(t) RqJC RqJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 Figure 6. Thermal Response http://onsemi.com 3 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k MJD5731 TURN-ON PULSE t1 VBE(off) 0V Vin VCC AP­ PROX. -11 V RC SCOPE t1 ≤ 7.0 ns 100 ≤ t2 < 500 ms t3 < 15 ns RB Vin t3 t2 Cjd