MJE4353G

MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http://onsemi.com Features 16 AMPS POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS • High Collector−Emitter Sustaining Voltage − • • • NPN PNP VCEO(sus) = 160 Vdc − MJE4343 MJE4353 High DC Current Gain − @ IC = 8.0 Adc hFE = 35 (Typ) Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc These are Pb−Free Devices 4 SOT−93 CASE 340D STYLE 1 MAXIMUM RATINGS Rating Symbol Max Unit Collector−Emitter Voltage VCEO 160 Vdc Collector−Base Voltage VCB 160 Vdc Emitter−Base Voltage VEB 7.0 Vdc Collector Current − Continuous Peak (Note 1) IC Adc 16 20 Base Current − Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25°C PD 125 Watts Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 °C Symbol Max Unit RqJC 1.0 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case May, 2012 − Rev. 5 2 3 TO−247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 1. Pulse Test: Pulse Width v 5.0 ms, Duty Cycle w 10%. © Semiconductor Components Industries, LLC, 2012 1 1 Publication Order Number: MJE4343/D MJE4343 (NPN), MJE4353 (PNP) MARKING DIAGRAMS TO−247 SOT−93 MJE43x3 AYWWG 1 BASE 3 EMITTER AYWWG MJE43x3 G 1 BASE 2 COLLECTOR MJE43x3 A Y WW G 3 EMITTER 2 COLLECTOR = = = = = Device Code Assembly Location Year Work Week Pb−Free Package ORDERING INFORMATION Package Type Shipping MJE4343G SOT−93 (Pb−Free) 30 Units / Rail MJE4353G SOT−93 (Pb−Free) 30 Units / Rail MJE4343G TO−247 (Pb−Free) 30 Units / Rail MJE4353G TO−247 (Pb−Free) 30 Units / Rail PD, POWER DISSIPATION (WATTS) Device Order Number 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 1. Power Derating Reference: Ambient Temperature http://onsemi.com 2 MJE4343 (NPN), MJE4353 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 160 − − 750 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) VCEO(sus) Vdc Collector−Emitter Cutoff Current (VCE = 80 Vdc, IB = 0) ICEO Collector−Emitter Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150°C) ICEX − − 1.0 5.0 mAdc Collector−Base Cutoff Current (VCB = Rated VCB, IE = 0) ICBO − 750 mAdc Emitter−Base Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO − 1.0 mAdc 15 8.0 35 (Typ) 15 (Typ) − − 2.0 3.5 mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 8.0 Adc, VCE = 2.0 Vdc) (IC = 16 Adc, VCE = 4.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 800 mA) (IC = 16 Adc, IB = 2.0 Adc) VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = 16 Adc, IB = 2.0 Adc) VBE(sat) − 3.9 Vdc Base−Emitter On Voltage (IC = 16 Adc, VCE = 4.0 Vdc) VBE(on) − 3.9 Vdc fT 1.0 − MHz Cob − 800 pF DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 3) (IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle w 2.0%. 3. fT = ⎪hfe⎪• ftest. http://onsemi.com 3 MJE4343 (NPN), MJE4353 (PNP) VCC +30 V 3.0 2.0 RC 25 ms +11 V t, TIME (s) μ 0 D1 51 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 1.0 0.7 0.5 SCOPE RB -9.0 V TJ = 25°C IC/IB = 10 VCE = 30 V tr 0.3 0.2 -4 V 0.1 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA td @ VBE(off) = 5.0 V 0.07 0.05 0.03 0.2 0.3 Note: Reverse polarities to test PNP devices. 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 Figure 3. Typical Turn−On Time Figure 2. Switching Times Test Circuit TYPICAL CHARACTERISTICS 5.0 2.0 ts TJ = 25°C 1.6 V, VOLTAGE (VOLTS) t, TIME (s) μ 3.0 TJ = 25°C IC/IB = 10 IB1 = IB2 VCE = 30 V 2.0 1.0 tf 0.7 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 0 20 0.2 0.3 Figure 4. Turn−Off Time 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) Figure 5. On Voltages http://onsemi.com 4 10 20 MJE4343 (NPN), MJE4353 (PNP) DC CURRENT GAIN 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 100 VCE = 2 V 50 TJ = 150°C 25°C -55°C 20 10 100 VVCE CE==22VV TTJJ==150°C 150°C 25°C 25°C -55°C -55°C 10 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 0.2 20 0.5 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. MJE4340 Series (NPN) 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 20 Figure 7. MJE4350 Series (PNP) 2.0 TJ = 25°C 1.6 IC = 4.0 A 8.0 A 16 A 1.2 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 5.0 Figure 8. Collector Saturation Region r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.02 0.01 0.02 0.01 0.02 SINGLE PULSE 0.05 0.1 P(pk) qJC(t) = r(t) qJC qJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 Figure 9. Thermal Response http://onsemi.com 5 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1000 2000 MJE4343 (NPN), MJE4353 (PNP) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 9. 100 IC, COLLECTOR CURRENT (AMP) 50 20 5.0ms 10 dc 5.0 2.0 1.0 0.5 0.2 0.1 3.0 SECONDARY BREAKDOWN LIMITED THERMAL LIMIT TC = 25°C BONDING WIRE LIMITED 50 70 100 150 200 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10. Maximum Forward Bias Safe Operating Area IC, COLLECTOR CURRENT (AMPS) 20 REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn−off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage−current conditions during reverse biased turn−off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 11 gives RBSOA characteristics. 16 TJ = 100°C VBE(off) ≤ 5 V 12 8.0 4.0 20 40 60 80 100 120 140 160 180 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 11. Maximum Reverse Bias Safe Operating Area http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. SCALE 1:1 C Q B U S E DIM A B C D E G H J K L Q S U V 4 A L 1 K 2 3 D DATE 01/03/2002 J H MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 MARKING DIAGRAM V G STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. AYWW xxxxx ANODE CATHODE ANODE CATHODE A Y WW xxxxx DOCUMENT NUMBER: DESCRIPTION: 98ASB42643B SOT−93 = Assembly Location = Year = Work Week = Device Code Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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