MJH11017, MJH11019,
MJH11021(PNP)
MJH11018, MJH11020,
MJH11022(NPN)
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector−Emitter Sustaining Voltage
•
•
•
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
These are Pb−Free Devices
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15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150−250 VOLTS, 150 WATTS
NPN
BASE
1
BASE
1
EMITTER 3
MJH11018
MJH11020
MJH11022
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCEO
Collector−Base Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
IC
15
30
Adc
Collector Current
− Continuous
− Peak (Note 1)
Max
Vdc
150
200
250
1
2
0.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
150
1.2
W
W/_C
TJ, Tstg
–65 to
+150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RqJC
0.83
_C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 10
SOT−93
(TO−218)
CASE 340D
STYLE 1
Vdc
150
200
250
IB
Thermal Resistance, Junction−to−Case
EMITTER 3
MJH11017
MJH11019
MJH11021
Unit
Base Current
Operating and Storage Junction Temperature
Range
PNP
COLLECTOR 2
COLLECTOR 2
1
3
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MJH11017/D
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
MARKING DIAGRAMS
TO−247
TO−218
MJH110xx
AYWWG
1 BASE
AYWWG
MJH110xx
3 EMITTER
1 BASE
3 EMITTER
2 COLLECTOR
2 COLLECTOR
A
Y
WW
G
MJH110xx
=
=
=
=
=
Assembly Location
Year
Work Week
Pb−Free Package
Device Code
xx = 17, 19, 21, 18, 20, 22
ORDERING INFORMATION
Device Order Number
Package Type
Shipping
MJH11017G
TO−218
(Pb−Free)
30 Units / Rail
MJH11018G
TO−218
(Pb−Free)
30 Units / Rail
MJH11019G
TO−218
(Pb−Free)
30 Units / Rail
MJH11020G
TO−218
(Pb−Free)
30 Units / Rail
MJH11021G
TO−218
(Pb−Free)
30 Units / Rail
MJH11022G
TO−218
(Pb−Free)
30 Units / Rail
MJH11017G
TO−247
(Pb−Free)
30 Units / Rail
MJH11018G
TO−247
(Pb−Free)
30 Units / Rail
MJH11019G
TO−247
(Pb−Free)
30 Units / Rail
MJH11020G
TO−247
(Pb−Free)
30 Units / Rail
MJH11021G
TO−247
(Pb−Free)
30 Units / Rail
MJH11022G
TO−247
(Pb−Free)
30 Units / Rail
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2
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
PD, POWER DISSIPATION (WATTS)
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
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ÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
150
200
250
−
−
−
−
−
−
1.0
1.0
1.0
−
−
0.5
5.0
−
2.0
400
100
15,000
−
−
−
2.5
4.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 0.1 Adc, IB = 0)
VCEO(sus)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
Collector Cutoff Current
(VCE = 75 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
(VCE = 125 Vdc, IB = 0)
Vdc
ICEO
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ICEV
Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)
IEBO
mAdc
mAdc
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 100 mA)
(IC = 15 Adc, IB = 150 mA)
VCE(sat)
Vdc
Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)
VBE(on)
−
2.8
Vdc
Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
VBE(sat)
−
3.8
Vdc
fT
3.0
−
−
Cob
−
−
400
600
pF
hfe
75
−
−
PNP
Unit
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJH11018, MJH11020, MJH11022
MJH11017, MJH11019, MJH11021
Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Typical
Characteristic
Symbol
NPN
Delay Time
td
150
75
ns
Rise Time
tr
1.2
0.5
ms
ts
4.4
2.7
ms
tf
2.5
2.5
ms
Storage Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 5.0 V) (See Figure 2)
Fall Time
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
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3
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
VCC
-100 V
RC
SCOPE
TUT
RB & RC varied to obtain desired current levels
D1, must be fast recovery types, e.g.:
1N5825 used above IB ≈ 100 mA
MSD6100 used below IB ≈ 100 mA
V2
APPROX
+12 V
0
V1
APPROX
-8.0 V
tr, tf ≤ 10 ns
Duty Cycle = 1.0%
RB
51
D1
+4.0 V
25 ms
For td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit, reverse diode and voltage polarities.
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.01
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 0.83°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.05
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1000
Figure 3. Thermal Response
FORWARD BIAS
IC, COLLECTOR CURRENT (AMPS)
TC = 25°C SINGLE PULSE
30
20
10
5.0
2.0
1.0
0.5
0.2
0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1 ms
0.5 ms
1.0 ms
5.0 ms
dc
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
2.0 3.0 5.0 10
20 30 50
100 150 250
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
REVERSE BIAS
IC, COLLECTOR CURRENT (AMPS)
30
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
L = 200 mH
IC/IB1 ≥ 50
TC = 100°C
VBE(off) = 0-5.0 V
RBE = 47 W
DUTY CYCLE = 10%
20
10
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
220
140
60
100
180
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0 20
260
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
PNP
10,000
VCE = 5.0 V
3000
2000
TC = 150°C
1000
25°C
500
-55°C
200
100
VCE = 5.0 V
5000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
10,000
7000
5000
NPN
TC = 150°C
2000
25°C
1000
500
-55°C
200
100
0.2
0.3
0.5 0.7
1.0
3.0
5.0
10
15
0.2
IC, COLLECTOR CURRENT (AMPS)
0.3
0.5 0.7 1.0
3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain
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5
10
15
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
NPN
4.5
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
PNP
TJ = 25°C
4.0
3.5
3.0
2.5
IC = 15 A
2.0
IC = 10 A
1.5
1.0
1.0
IC = 5.0 A
2.0 3.0 5.0
10
20 30
50
100 200 300 500
1000
4.5
TJ = 25°C
4.0
3.5
3.0
IC = 15 A
2.5
2.0
IC = 10 A
1.5
IC = 5.0 A
1.0
1.0
2.0 3.0 5.0
10
20 30
50
100 200 300 500 1000
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
PNP
NPN
4.0
4.0
3.5
3.5
TJ = 25°C
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
3.0
2.5
VBE(sat) @ IC/IB = 100
2.0
1.5
TJ = 25°C
3.0
2.5
VBE(sat) @ IC/IB = 100
2.0
1.5
VBE @ VCE = 5.0 V
VBE @ VCE = 5.0 V
1.0
1.0
VCE(sat) @ IC/IB = 100
0.5
0.2 0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
0.5
0.2
20
VCE(sat) @ IC/IB = 100
0.5 0.7 1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
PNP
NPN
MJH11017
MJH11019
MJH11021
MJH11018
MJH11020
MJH11022
COLLECTOR
BASE
COLLECTOR
BASE
EMITTER
EMITTER
Figure 9. Darlington Schematic
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6
20
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
SCALE 1:1
C
Q
B
U
S
E
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
4
A
L
1
K
2
3
D
DATE 01/03/2002
J
H
MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
MARKING DIAGRAM
V
G
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
AYWW
xxxxx
ANODE
CATHODE
ANODE
CATHODE
A
Y
WW
xxxxx
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42643B
SOT−93
= Assembly Location
= Year
= Work Week
= Device Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
STYLE 1:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 2:
PIN 1.
2.
3.
4.
ANODE
CATHODE (S)
ANODE 2
CATHODES (S)
STYLE 5:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 6:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 3:
PIN 1.
2.
3.
4.
98ASB15080C
TO−247
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2021
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