MJL3281AG

MJL3281A (NPN) MJL1302A (PNP) Complementary Bipolar Power Transistors Features • • • • • • http://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency These Devices are Pb−Free and are RoHS Compliant* 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS Benefits • • • • • Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwidth NPN PNP COLLECTOR 2, 4 Applications COLLECTOR 2, 4 1 BASE • High−End Consumer Audio Products Home Amplifiers Home Receivers Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) 1 BASE ♦ • ♦ EMITTER 3 EMITTER 3 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Collector−Emitter Voltage VCEO 260 Vdc Collector−Base Voltage VCBO 260 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 260 Vdc IC 15 Adc ICM 25 Adc Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 Watts W/°C TJ, Tstg −   65 to +150 °C Symbol Max Unit RθJC 0.625 °C/W Collector Current − Continuous Collector Current − Peak (Note 1) Operating and Storage Junction Temperature Range Thermal Resistance, Junction−to−Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 11 1 2 3 TO−264 CASE 340G STYLE 2 xxxx A YY WW G 1 1 3 BASE EMITTER 2 COLLECTOR = 3281 or 1302 = Location Code = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device THERMAL CHARACTERISTICS Characteristic MJLxxxxA AYYWWG Unit Package Shipping MJL3281AG TO−264 (Pb−Free) 25 Units/Rail MJL1302AG TO−264 (Pb−Free) 25 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: MJL3281A/D MJL3281A (NPN) MJL1302A (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Max 260 − − 50 − 5 4 1 − − 75 75 75 75 45 150 150 150 150 − − 3 30 − − 600 Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCB = 260 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO Vdc μAdc μAdc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 100 Vdc, t = 1 s (non−repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) VCE(sat) Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Cob http://onsemi.com 2 MHz pF MJL3281A (NPN) MJL1302A (PNP) TYPICAL CHARACTERISTICS PNP MJL1302A NPN MJL3281A 60 VCE = 10 V 40 5V 30 20 10 TJ = 25°C ftest = 1 MHz 0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) VCE = 10 V f, T CURRENT BANDWIDTH PRODUCT (MHz) f, T CURRENT BANDWIDTH PRODUCT (MHz) 50 50 5V 40 30 20 TJ = 25°C ftest = 1 MHz 10 0 0.1 10 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product PNP MJL1302A NPN MJL3281A 1000 1000 TJ = 100°C VCE = 5.0 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 5.0 V 25°C 100 -25°C 10 0.05 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) TJ = 100°C -25°C 10 0.05 100 25°C 100 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain 100 Figure 4. DC Current Gain PNP MJL1302A NPN MJL3281A 2.5 3.0 TJ = 25°C IC/IB = 10 2.5 2.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 10 VBE(sat) 1.5 1.0 0.5 TJ = 25°C IC/IB = 10 2.0 1.5 VBE(sat) 1.0 0.5 VCE(sat) VCE(sat) 0 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 Figure 5. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. Typical Saturation Voltages http://onsemi.com 3 100 MJL3281A (NPN) MJL1302A (PNP) TYPICAL CHARACTERISTICS NPN MJL3281A 10 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) PNP MJL1302A TJ = 25°C VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 0.1 100 0.1 Figure 7. Typical Base−Emitter Voltage 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 8. Typical Base−Emitter Voltage PNP MJL1302A NPN MJL3281A 10000 Cib Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 Cob 1000 100 1000 Cob TJ = 25°C ftest = 1 MHz TJ = 25°C ftest = 1 MHz 100 100 0.1 1.0 10 100 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 9. MJL1302A Typical Capacitance Figure 10. MJL3281A Typical Capacitance 100 IC , COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 ms 10 50 ms 1 sec 1.0 250 ms 0.1 1.0 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 11. Active Region Safe Operating Area http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−3BPL (TO−264) CASE 340G−02 ISSUE J DATE 17 DEC 2004 SCALE 1:2 Q 0.25 (0.010) −B− M T B −T− M C E U N A R 1 2 L 3 P F 2 PL K W G J H D 3 PL 0.25 (0.010) STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER M T B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q R U W S STYLE 3: PIN 1. GATE 2. SOURCE 3. DRAIN MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.2 REF 4.35 REF 2.2 2.6 3.1 3.5 2.25 REF 6.3 REF 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.411 REF 0.172 REF 0.087 0.102 0.122 0.137 0.089 REF 0.248 REF 0.110 0.125 GENERIC MARKING DIAGRAM* STYLE 4: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER XXXXXX AYYWW XXXXXX A YY WW = Specific Device Code = Location Code = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98ASB42780B TO−3BPL (TO−264) Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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