MMBT2222AWT1G

MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features http://onsemi.com COLLECTOR 3 • Pb−Free Package is Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc 3 Symbol PD RqJA TJ, Tstg Max 150 833 −55 to +150 Unit mW °C/W °C 1 2 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature SC−70 CASE 419 STYLE 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM P1 M G G 1 P1 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT2222AWT1 MMBT2222AWT1G Package SC−70 Shipping † 3000/Tape & Reel SC−70 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 4 Publication Order Number: MMBT2222AWT1/D MMBT2222AWT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 1) DC Current Gain (Note 1) (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector −Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base −Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Small −Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf − − − − 10 25 225 ns 60 ns fT Cobo Cibo hie hre hfe hoe NF 300 − − 0.25 − 75 25 − − 8.0 30 1.25 4.0 375 200 4.0 MHz pF pF kW X 10− 4 − mmhos dB HFE 35 50 75 100 40 VCE(sat) − − VBE(sat) 0.6 − 1.2 2.0 0.3 1.0 Vdc − − − 300 − Vdc − V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 75 6.0 − − − − − 20 10 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 MMBT2222AWT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +16 V 0 −2 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1 kW 200 +16 V 0 < 2 ns CS* < 10 pF −14 V < 20 ns 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1k 1N914 +30 V 200 CS* < 10 pF −4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time 1000 700 500 hFE , DC CURRENT GAIN 300 200 TJ = 125°C 25°C 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 −55°C VCE = 1.0 V VCE = 10 V 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 0.6 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 50 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 Figure 4. Collector Saturation Region http://onsemi.com 3 MMBT2222AWT1 200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 t′s = ts − 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) tf 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Turn −On Time Figure 6. Turn −Off Time 10 8.0 IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 mA 100 mA 500 mA 1.0 mA NF, NOISE FIGURE (dB) 6.0 6.0 4.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 2.0 0 50 0.5 1.0 2.0 5.0 10 20 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 Figure 9. Capacitances Figure 10. Current−Gain Bandwidth Product http://onsemi.com 4 MMBT2222AWT1 1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 COEFFICIENT (mV/° C) V, VOLTAGE (VOLTS) 1.0 V +0.5 0 −0.5 −1.0 −1.5 −2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k −2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVB for VBE RqVC for VCE(sat) 0.2 Figure 11. “On” Voltages Figure 12. Temperature Coefficients http://onsemi.com 5 MMBT2222AWT1 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M D e1 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. HE 1 2 E b e A 0.05 (0.002) A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 A1 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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