MMBT4126LT1G
General Purpose Transistor
PNP Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating: − Human Body Model: > 4000 V
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− Machine Model: > 400 V
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−25
Vdc
Collector−Base Voltage
VCBO
−25
Vdc
Emitter−Base Voltage
VEBO
−4
Vdc
IC
−200
mAdc
Collector Current−Continuous
2
EMITTER
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
SOT−23
CASE 318
STYLE 6
PD
RqJA
MARKING DIAGRAM
PD
Thermal Resistance, Junction−to−Ambient
(Note 2)
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
C3 M G
G
C3 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT4126LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2001
October, 2016 − Rev. 3
1
Publication Order Number:
MMBT4126LT1/D
MMBT4126LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−25
−
−25
−
−4
−
−
−50
120
60
300
−
−
−0.4
−
−0.95
250
−
−
4.5
−
10
120
2.5
480
−
−
4.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
Vdc
Vdc
Vdc
ICEX
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −2.0 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
HFE
Collector −Emitter Saturation Voltage
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Small −Signal Current Gain
(IC = −2.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
hfe
Noise Figure
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF
MHz
pF
pF
−
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TYPICAL TRANSIENT CHARACTERISTICS
10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25°C
TJ = 125°C
Cibo
3.0
2.0
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
QT
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
100
70
50
20 30 40
1.0
Figure 1. Capacitance
2.0 3.0
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 2. Charge Data
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2
200
MMBT4126LT1G
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
IC = 0.5 mA
8
6
4
IC = 50 mA
2
IC = 100 mA
0
100
0.1
0.2
40
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 3.
100
Figure 4.
h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
h fe , DC CURRENT GAIN
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
Figure 5. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 6. Output Admittance
20
0.3
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
5.0 7.0 10
0.1
Figure 7. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 8. Voltage Feedback Ratio
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3
MMBT4126LT1G
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
-55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 9. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 10. Collector Saturation Region
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
1.0
0.5
0
+25°C TO +125°C
-55°C TO +25°C
-0.5
+25°C TO +125°C
-1.0
-55°C TO +25°C
qVB FOR VBE(sat)
-1.5
-2.0
200
qVC FOR VCE(sat)
0
Figure 11. “ON” Voltages
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
Figure 12. Temperature Coefficients
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4
180 200
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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