MMBT4401LT1G

MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO VCBO VEBO IC ICM Value 40 60 6.0 600 900 Unit Vdc Vdc Vdc mAdc mAdc 1 2 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM RqJA PD 2X M G G 2X = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Transient pulses must not cause the junction temperature to be exceeded. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION Device MMBT4401LT1G MMBT4401LT3G Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3000 Tape & Reel 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 9 1 Publication Order Number: MMBT4401LT1/D MMBT4401LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 3) Collector − Base Breakdown Voltage Emitter − Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hFE 20 40 80 100 40 − − 0.75 − − − − 300 − 0.4 0.75 0.95 1.2 − (IC = 1.0 mAdc, IB = 0) (IC = 0.1 mAdc, IE = 0) (IE = 0.1 mAdc, IC = 0) (VCE = 35 Vdc, VEB = 0.4 Vdc) (VCE = 35 Vdc, VEB = 0.4 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 60 6.0 − − − − − 0.1 0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Max Unit Collector − Emitter Saturation Voltage VCE(sat) Vdc Base − Emitter Saturation Voltage VBE(sat) Vdc SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product Collector−Base Capacitance Emitter−Base Capacitance Input Impedance Voltage Feedback Ratio Small − Signal Current Gain Output Admittance SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf − − − − 15 20 225 30 ns fT Ccb Ceb hie hre hfe hoe 250 − − 1.0 0.1 40 1.0 − 6.5 30 15 8.0 500 30 MHz pF pF kW X 10− 4 − mmhos ns 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V +16 V 0 - 2.0 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1.0 kW 200 W +16 V 0 < 2.0 ns CS* < 10 pF -14 V < 20 ns 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1.0 kW + 30 V 200 W CS* < 10 pF - 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 2 MMBT4401LT1G TRANSIENT CHARACTERISTICS 25°C 10 7.0 5.0 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 300 500 QT 100°C VCC = 30 V IC/IB = 10 QA Figure 3. Charge Data 100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10 100 70 tr 50 30 20 tf VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 4. Turn−On Time Figure 5. Rise and Fall Times 300 200 t s′, STORAGE TIME (ns) ts′ = ts - 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns) 100 70 50 30 20 IC/IB = 10 IC/IB = 20 VCC = 30 V IB1 = IB2 100 70 50 10 7.0 30 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Storage Time Figure 7. Fall Time http://onsemi.com 3 MMBT4401LT1G SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 IC = 1.0 mA, RS = 150 W IC = 500 mA, RS = 200 W IC = 100 mA, RS = 2.0 kW IC = 50 mA, RS = 4.0 kW RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 mA IC = 100 mA IC = 500 mA IC = 1.0 mA 8.0 NF, NOISE FIGURE (dB) 6.0 6.0 4.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 2.0 0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k RS, SOURCE RESISTANCE (OHMS) 50 k 100 k Figure 8. Frequency Effects Figure 9. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 50 k hie , INPUT IMPEDANCE (OHMS) MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 20 k 10 k 5.0 k 2.0 k 1.0 k 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 10. Input Impedance 10 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) hoe, OUTPUT ADMITTANCE (m mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 20 10 5.0 2.0 1.0 0.1 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Voltage Feedback Ratio http://onsemi.com 4 Figure 12. Output Admittance MMBT4401LT1G STATIC CHARACTERISTICS 500 450 400 h FE, DC CURRENT GAIN 350 300 250 200 150 100 50 0 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 - 55°C TJ = 150°C VCE = 5.0 V VCE = 2.0 V VCE = 1.0 V 25°C Figure 13. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.2 1.0 0.8 IC = 1.0 mA 0.6 0.4 0.2 0 10 mA 100 mA 300 mA 500 mA 0.001 0.01 0.1 IB, BASE CURRENT (mA) 1 10 100 Figure 14. Collector Saturation Region VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.35 IC/IB = 10 0.30 0.25 0.20 0.15 0.10 -55°C 0.05 0 0.0001 0.1 0.001 0.01 IC, COLLECTOR CURRENT (A) 1 25°C COEFFICIENT (mV/ °C) 150°C + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.1 0.2 qVB for VBE 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 qVC for VCE(sat) Figure 15. Collector−Emitter Saturation Voltage vs. Collector Current Figure 16. Temperature Coefficients http://onsemi.com 5 MMBT4401LT1G STATIC CHARACTERISTICS 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 150°C 0.0001 0.001 0.01 0.1 1 −55°C VBE(on), BASE−EMITTER TURN ON VOLTAGE (V) IC/IB = 10 1.0 0.9 0.8 0.7 25°C 0.6 0.5 0.4 0.3 150°C 0.0001 0.001 0.01 0.1 1 VCE = 2.0 V −55°C 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. Base−Emitter Saturation Voltage vs. Collector Current 21 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 19 17 15 13 11 9 8.5 7.5 6.5 5.5 4.5 3.5 2.5 1.5 0 Figure 18. Base−Emitter Turn On Voltage vs. Collector Current 0 1 2 3 4 5 6 5 10 15 20 25 30 35 40 45 50 Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V) Figure 19. Input Capacitance vs. Emitter Base Voltage Figure 20. Output Capacitance vs. Collector Base Voltage fT, CURRENT−GAIN−BANDWIDTH (MHz) 1 IC, COLLECTOR CURRENT (A) 10 msec 0.1 1 sec 1000 VCE = 1.0 V TA = 25°C 100 0.01 0.001 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) 100 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 21. Safe Operating Area Figure 22. Current−Gain−Bandwidth Product http://onsemi.com 6 MMBT4401LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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