MOC8111S

MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) Features Description ■ High isolation voltage The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for improved noise immunity. ■ ■ ■ ■ ■ 7500 VAC Peak—1 second High BVCEO minimum 70 Volts Current transfer ratio in selected groups: MOC8111M: 20% min. MOC8112M: 50% min. MOC8113M: 100% min. Maximum switching time in saturation specified Underwriters Laboratory (UL) recognized (File #E90700, Vol. 2) IEC60747-5-2 approved (ordering option V) Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls Schematic ANODE 1 6 N/C 6 CATHODE 2 1 5 COLLECTOR 6 1 N/C 3 4 EMITTER 6 1 ©2007 Fairchild Semiconductor Corporation MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 www.fairchildsemi.com MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) September 2009 Symbol Parameter Value Unit 260 mW 3.5 mW/°C TOTAL DEVICE PD Total Device Power Dissipation @ TA = 25°C Derate above 25°C TOPR Ambient Operating Temperature Range -40 to +100 °C TSTG Storage Temperature Range -40 to +150 °C TSOL Lead Soldering Temperature (Wave Solder) (1/16" from case, 10 sec. duration) 260 °C Forward Current – Continuous 90 mA Forward Current – Peak (PW = 1µs, 300pps) 3 A VR Reverse Voltage 6 V PD LED Power Dissipation @ TA = 25°C INPUT LED IF IF(pk) Derate above 25°C 135 mW 1.8 mW/°C 200 mW 2.67 mW/°C OUTPUT TRANSISTOR PD Detector Power Dissipation @ TA = 25°C Derate above 25°C ©2007 Fairchild Semiconductor Corporation MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 www.fairchildsemi.com 2 MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit 1.35 1.65 V 1.15 1.50 EMITTER VF Input Forward Voltage IF = 60mA VR Reverse Voltage IR = 10µA CJ Capacitance IF = 10mA IR Reverse Leakage Current 6.0 15 V VF = 0V, f = 1.0MHz 50 pF VF = 1V, f = 1.0MHz 65 VR = 3.0V .35 10 µA DETECTOR BVCEO Breakdow Voltage, Collector to Emitter IC = 1.0mA, IF = 0 70 V BVECO Breakdow Voltage, Emitter to Collector IE = 100µA, IF = 0 7 V ICEO Leakage Current, Collector to Emitter VCE = 10V, IF = 0 5 CCE Capacitance, Collector to Emitter VCE = 0 V, f = 1MHz 8 50 V pF Isolation Characteristics Symbol Characteristic Test Conditions VISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec. CISO Isolation Capacitance VI-O = 0, f = 1MHz Min. Typ. Max. 7500 Units VAC(PK) 0.5 pF Transfer Characteristic Symbol Characteristics Test Conditions Device Min. MOC8111M 20 MOC8112M 50 MOC8113M 100 Typ. Max. Units DC CHARACTERISTICS CTR Output/Input Current Transfer Ratio VCE(SAT) Collector-Emitter Saturation Voltage IF = 10mA, VCE = 5V % IF = 10mA, IC = 2.5mA All 0.27 0.4 V RL = 100Ω, IC = 2mA, VCC = 10V, See Figure 7 All 6.0 10 µs All 5.5 10 µs IF = 20mA, VCE = 0.4V MOC8111M 3.0 5.5 µs IF = 10mA, VCE = 0.4V MOC812M/3M 4.2 8.0 AC CHARACTERISTICS Non-Saturated Switching Times ton Turn-On Time toff Turn-Off Time Saturated Switching Times ton tr toff tf Turn-On Time Rise-Time Turn-Off Time Fall-Time ©2007 Fairchild Semiconductor Corporation MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 IF = 20mA, VCE = 0.4V MOC8111M 2.0 4.0 IF = 10mA, VCE = 0.4V MOC812M/3M 3.0 6.0 IF = 20mA, VCE = 0.4V MOC8111M 18 34 IF = 10mA, VCE = 0.4V MOC812M/3M 23 39 IF = 20mA, VCE = 0.4V MOC8111M 11 20 IF = 10mA, VCE = 0.4V MOC812M/3M 14 24 µs µs µs www.fairchildsemi.com 3 MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) Electrical Characteristics (TA = 25°C Unless otherwise specified.) As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1594 Vpeak Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 Vpeak VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm Insulation Resistance at Ts, VIO = 500V 109 Ω RIO ©2007 Fairchild Semiconductor Corporation MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 www.fairchildsemi.com 4 MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) Safety and Insulation Ratings Fig. 1 LED Forward Voltage vs. Forward Current Fig. 2 Normalized CTR vs. Forward Current 1.8 1.4 TA = 25°C VCE = 5.0 V Normalized to IF = 10 mA 1.2 1.6 1.0 NORMALIZED CTR VF - FORWARD VOLTAGE (V) 1.7 1.5 TA = -55°C 1.4 1.3 1.2 0.8 0.6 0.4 TA = 25°C 0.2 1.1 TA = 100°C 1.0 0.0 1 10 100 0 5 IF - LED FORWARD CURRENT (mA) VCE (sat) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.6 NORMALIZED CTR IF = 5 mA 1.2 IF = 10 mA 1.0 0.8 IF = 20 mA 0.6 0.4 -75 Normalized to IF = 10 mA TA = 25°C -50 -25 0 25 50 75 100 125 TA - AMBIENT TEMPERATURE (°C) 20 Fig. 4 Collector Emitter Saturation Voltage vs Collector Current 100 10 1 IF = 2.5 mA 0.1 IF = 20 mA 0.01 IF = 5 mA IF = 10 mA TA = 25°C 0.001 0.01 0.1 1 10 IC - COLLECTOR CURRENT (mA) Fig. 5 Switching Speed vs. Load Resistor Fig. 6 Dark current vs. Ambient Temperature. 1000 ICEO - COLLECTOR-EMITTER DARK CURRENT (µA) 1e+1 IF = 10 mA VCC = 10 V TA = 25°C SWITCHING SPEED - (µs) 15 IF - FORWARD CURRENT (mA) Fig. 3 Normalized CTR vs. Ambient Temperature 1.4 10 100 Toff Tf 10 Ton 1 Tr 0.1 VCE = 10V 1e+0 1e-1 1e-2 1e-3 1e-4 1e-5 1e-6 0.1 1 10 100 0 R-LOAD RESISTOR (kΩ) ©2007 Fairchild Semiconductor Corporation MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 25 50 75 100 125 TA - AMBIENT TEMPERATURE (°C) www.fairchildsemi.com 5 MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) Typical Performance Characteristics WAVE FORMS VCC = 10V INPUT PULSE IF IC INPUT RL = 100Ω 10% OUTPUT OUTPUT PULSE 90% tr ton tf toff Adjust IF to produce IC = 2 mA Figure 7. Switching Time Test Circuit and Waveforms ©2007 Fairchild Semiconductor Corporation MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 www.fairchildsemi.com 6 MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) TEST CIRCUIT Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.76) Pin 1 Rcommended Pad Layout 0.25–0.36 3.28–3.53 5.08 (Max.) 0.38 (Min.) 0.20–0.30 2.54 (Bsc) (0.86) 0.16–0.88 (8.13) 0.41–0.51 1.02–1.78 0.76–1.14 Note: All dimensions in mm. ©2007 Fairchild Semiconductor Corporation MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 www.fairchildsemi.com 7 MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) Package Dimensions Option Example Part Number Description No Suffix MOC8111M S MOC8111SM Through Hole SR2 MOC8111SR2M T MOC8111TM 0.4" Lead Spacing VDE 0884 Surface Mount Lead Bend Surface Mount; Tape and Reel V MOC8111VM TV MOC8111TVM IEC60747-5-2 (VDE), 0.4" Lead Spacing SV MOC8111SVM IEC60747-5-2 (VDE), Surface Mount SR2V MOC8111SR2VM IEC60747-5-2 (VDE), Surface Mount, Tape and Reel Marking Information 1 MOC8111 2 X YY Q 6 V 3 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘8’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code ©2007 Fairchild Semiconductor Corporation MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 www.fairchildsemi.com 8 MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) Ordering Information 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Note: All dimensions are in millimeters. Reflow Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) ©2007 Fairchild Semiconductor Corporation MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 www.fairchildsemi.com 9 MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) Tape Dimensions Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©2007 Fairchild Semiconductor Corporation MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 www.fairchildsemi.com 10 MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.