MPS3646RLRAG

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ON Semiconductort Switching Transistor MPS3646 NPN Silicon w ON Semiconductor Preferred Device This device is available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Emitter Voltage VCES 40 Vdc Collector −Base Voltage VCBO 40 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current — Continuous — 10 ms Pulse IC 300 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg −55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29−11, STYLE 1 TO−92 (TO−226AA) COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit (IC = 100 mAdc, VBE = 0) V(BR)CES 40 — Vdc OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage Collector −Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) VCEO(sus) 15 — Vdc Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 40 — Vdc Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 5.0 — Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0, TA = 65°C) ICES Vdc mAdc — — 0.5 3.0 hFE 30 25 15 120 — — — ON CHARACTERISTICS(1) DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 0.5 Vdc) (IC = 300 mA, VCE = 1.0 Vdc) Collector −Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 30 mA, IB = 3.0 mA, TA = 65°C) VCE(sat) — — — — 0.2 0.28 0.5 0.3 Vdc Base −Emitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mA) VBE(sat) 0.73 — — 0.95 1.2 1.7 Vdc 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: MPS3646/D MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit fT 350 — MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 5.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 9.0 pF ton — 18 ns td — 10 ns tr — 15 ns toff — 28 ns tf — 15 ns ts — 18 ns SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn−On Time (VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc) (Figure 1) Delay Time Rise Time Turn−Off Time (VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc) (Figure 1) Fall Time Storage Time (VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2) −3.0 V +10 V 33 1.0 k +7.6 V Vin 0 tr, tf < 1.0 ns Pulse Width ≥ 240 ns Zin = 50 Ω 0.1 To Sampling Scope tr < 1.0 ns Zin = 100 kΩ 120 50 Figure 1. Switching Time Test Circuit +10 V 91 +11 V 10% Pulse Waveform at Point “A” +6.0 V 0.1 0 −4 V 500 To Sampling Scope tr ≤ 1.0 ns Zin = 100 kΩ 500 0 −10 V Vin 56 10% 890 “A” tr < 1.0 ns Pulse Width = 300 ns Duty Cycle = 2.0% Zin = 50 Ω Figure 2. Charge Storage Time Test Circuit http://onsemi.com 2 ts Vout MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN 70 TJ = 125°C 50 25°C −15°C 30 − 55°C 20 10 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 Figure 3. Minimum Current Gain “ON” CONDITION CHARACTERISTICS VCE, MAXIMUM COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 MPS3646 TJ = 25°C 0.8 IC = 10 mA 50 mA 200 mA 100 mA 0.6 0.4 0.2 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 Figure 4. Collector Saturation Region 1.0 IC/IB = 10 TJ = 25°C θV, TEMPERATURE COEFFICIENTS (mV/°C) Vsat , SATURATION VOLTAGE (VOLTS) 1.2 MAX VBE(sat) MIN VBE(sat) 0.8 0.6 MAX VCE(sat) 0.4 0.2 0 1.0 2.0 3.0 50 70 100 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 1.0 0.5 (25°C to 125°C) (−55 °C to 25°C) 0 −0.5 (25°C to 125°C) −1.0 qVB for VBE (−55 °C to 25°C) −1.5 −2.0 200 qVC for VCE(sat) 0 Figure 5. Saturation Voltage Limits 40 80 120 160 IC, COLLECTOR CURRENT (mA) Figure 6. Temperature Coefficients http://onsemi.com 3 200 MPS3646 DYNAMIC CHARACTERISTICS 200 200 VCC = 10 V TJ = 25°C 100 70 t r , RISE TIME (ns) t d, DELAY TIME (ns) 100 td @ VEB(off) = 3 V 50 30 2V 20 0V 10 70 VCC = 10 V 50 30 20 VCC = 3 V 10 7.0 5.0 IC/IB = 10 TJ = 25°C TJ = 125°C 7.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 5.0 200 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 Figure 7. Delay Time 200 TJ = 25°C TJ = 125°C 20 10 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 100 70 50 30 IC/IB = 20 20 IC/IB = 10 10 ts′ ^ ts − 1/8 tf IB1 = IB2 7.0 VCC = 10 V TJ = 25°C TJ = 125°C 100 IC/IB = 10 t f , FALL TIME (ns) t s , STORAGE TIME (ns) IC/IB = 20 30 7.0 5.0 200 1.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 2.0 Figure 9. Storage Time 200 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 1000 MAX TYP 7.0 Cibo 5.0 Cobo 3.0 IC/IB = 10 TJ = 25°C TJ = 125°C 700 500 Q, CHARGE (pC) CAPACITANCE (pF) 100 Figure 10. Fall Time 10 300 200 QT 100 VCC = 3 V 70 50 VCC = 10 V 30 2.0 200 Figure 8. Rise Time 50 5.0 100 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (Vdc) 5.0 20 10 QA VCC = 3 V 1.0 Figure 11. Junction Capacitance 2.0 3.0 Figure 12. Maximum Charge Data http://onsemi.com 4 MPS3646 PACKAGE DIMENSIONS CASE 029−11 (TO−226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P F SEATING PLANE L K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X−X N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 5 INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− MPS3646 Notes http://onsemi.com 6 MPS3646 Notes ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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