MPSA70RLRM

MPSA70 Amplifier Transistor PNP Silicon Features • Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VEBO IC PD PD TJ, Tstg Value −40 −4.0 −100 625 5.0 1.5 12 −55 to +150 Unit Vdc Vdc mAdc mW mW/°C W mW/°C °C 1 2 http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W TO−92 CASE 29−11 STYLE 1 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPS A70 AYWW G G MPSA70 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPSA70RLRM MPSA70RLRMG Package TO−92 TO−92 (Pb−Free) Shipping 2,000/Ammo Pack 2,000/Ammo Pack *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 2 Publication Order Number: MPSA70/D MPSA70 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector Cutoff Current (VCB = −30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = −5.0 mAdc, VCE = −10 Vdc) Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −5.0 mAdc, VCE = −10 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. fT Cobo 125 − − 4.0 MHz pF hFE VCE(sat) 40 − 400 −0.25 − Vdc V(BR)CEO V(BR)EBO ICBO −40 −4.0 − − − −100 Vdc Vdc nAdc Symbol Min Max Unit http://onsemi.com 2 MPSA70 TYPICAL NOISE CHARACTERISTICS (VCE = − 5.0 Vdc, TA = 25°C) 10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 mA 30 mA 3.0 2.0 1.0 mA 100 mA 300 mA BANDWIDTH = 1.0 Hz RS ≈ 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 mA 100 mA 30 mA 10 mA IC = 1.0 mA BANDWIDTH = 1.0 Hz RS ≈ ∞ Figure 1. Noise Voltage Figure 2. Noise Current RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k BANDWIDTH = 1.0 Hz 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 BANDWIDTH = 1.0 Hz 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0 k 500 700 1.0 k Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 0.5 dB 10 Hz to 15.7 kHz Noise Figure is Defined as: en2 ) 4KTRS ) In 2RS2 1 2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) NF + 20 log10 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (mA) Figure 5. Wideband http://onsemi.com 3 MPSA70 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125°C 25°C h FE , DC CURRENT GAIN 200 −55 °C 100 80 60 40 0.003 0.005 MPSA70 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 0.8 IC = 1.0 mA 10 mA 50 mA IC, COLLECTOR CURRENT (mA) TA = 25°C MPSA70 100 TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 300 mA 60 IB = 400 mA 350 mA 250 mA 200 mA 150 mA 0.6 100 mA 0.4 40 20 0 100 mA 50 mA 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 40 Figure 7. Collector Saturation Region Figure 8. Collector Characteristics 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 TJ = 25°C θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.4 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C − 55°C to 25°C VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 0 0.1 VBE(on) @ VCE = 1.0 V 0.8 25°C to 125°C 1.6 qVB for VBE 0.2 − 55°C to 25°C 50 100 VCE(sat) @ IC/IB = 10 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 9. “On” Voltages Figure 10. Temperature Coefficients http://onsemi.com 4 MPSA70 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 70 50 30 20 10 7.0 5.0 1.0 td @ VBE(off) = 0.5 V tr VCC = 3.0 V IC/IB = 10 TJ = 25°C 1000 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 −1.0 ts VCC = − 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) tf 2.0 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 − 2.0 − 3.0 − 5.0 − 7.0 −10 − 20 − 30 IC, COLLECTOR CURRENT (mA) − 50 − 70 −100 Figure 11. Turn−On Time BANDWIDTH PRODUCT (MHz) Figure 12. Turn−Off Time 500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF) 10 7.0 Cib 5.0 TJ = 25°C 3.0 2.0 Cob f T, CURRENT−GAIN 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current−Gain − Bandwidth Product Figure 14. Capacitance 20 hie , INPUT IMPEDANCE (k Ω ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 MPSA70 hfe ≈ 200 @ IC = −1.0 mA hoe , OUTPUT ADMITTANCE (m mhos) VCE = −10 Vdc f = 1.0 kHz TA = 25°C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPSA70 hfe ≈ 200 @ IC = 1.0 mA 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 15. Input Impedance Figure 16. Output Admittance http://onsemi.com 5 MPSA70 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 P(pk) t1 t2 FIGURE 18 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−569) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) 0.01 0.01 0.02 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 17. Thermal Response 400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 T C = 2 5° C TA = 25°C TJ = 150°C 1.0 ms 100 ms dc dc 10 ms 1.0 s CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 40 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150 °C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. Figure 19. Active−Region Safe Operating Area 104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10−1 10−2 ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 17 by the steady state value RqJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN569/D. ICBO AND ICEX @ VBE(off) = 3.0 V −4 0 −2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) Figure 20. Typical Collector Leakage Current http://onsemi.com 6 MPSA70 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 MPSA70/D