MPSA70

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA70/D Amplifier Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSA70 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VEBO IC PD PD TJ, Tstg Value –40 –4.0 –100 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –100 µAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)EBO ICBO –40 –4.0 — — — –100 Vdc Vdc nAdc v 300 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPSA70 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –5.0 mAdc, VCE = –10 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) hFE VCE(sat) 40 — 400 –0.25 — Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) fT Cobo 125 — — 4.0 MHz pF 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA70 TYPICAL NOISE CHARACTERISTICS (VCE = – 5.0 Vdc, TA = 25°C) 10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 µA 30 µA 3.0 2.0 1.0 mA 100 µA 300 µA BANDWIDTH = 1.0 Hz RS ≈ 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 µA 100 µA 30 µA 10 µA IC = 1.0 mA BANDWIDTH = 1.0 Hz RS ≈ ∞ Figure 1. Noise Voltage Figure 2. Noise Current NOISE FIGURE CONTOURS (VCE = – 5.0 Vdc, TA = 25°C) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) BANDWIDTH = 1.0 Hz 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 10 Hz to 15.7 kHz Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (µA) 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) + 20 log10 en2 ) 4KTRS ) In 2RS2 1 2 Figure 5. Wideband Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPSA70 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125°C 25°C h FE, DC CURRENT GAIN 200 – 55°C 100 80 60 40 0.003 0.005 MPSA70 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 Figure 6. DC Current Gain VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA) TA = 25°C MPSA70 100 TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 60 IB = 400 µA 350 µA 250 µA 200 µA 150 µA 0.6 0.4 40 100 µA 50 µA 0.2 20 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40 Figure 7. Collector Saturation Region Figure 8. Collector Characteristics TJ = 25°C θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C – 55°C to 25°C VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 0.8 25°C to 125°C 1.6 qVB for VBE 0.2 – 55°C to 25°C 2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 9. “On” Voltages Figure 10. Temperature Coefficients 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA70 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25°C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 –1.0 ts VCC = – 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) tf 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA) – 50 – 70 –100 Figure 11. Turn–On Time f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 12. Turn–Off Time 500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF) 10 TJ = 25°C 7.0 Cib 5.0 3.0 2.0 Cob 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current–Gain — Bandwidth Product Figure 14. Capacitance 20 10 hie , INPUT IMPEDANCE (k Ω ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPSA70 hfe ≈ 200 @ IC = –1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = –10 Vdc f = 1.0 kHz TA = 25°C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPSA70 hfe ≈ 200 @ IC = 1.0 mA Figure 15. Input Impedance Figure 16. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MPSA70 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5 0.2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 500 1.0 k 2.0 k Figure 17. Thermal Response 400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25°C TA = 25°C dc TJ = 150°C 1.0 ms 100 µs dc 10 µs 1.0 s The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon T J(pk) = 150 °C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40 Figure 18. Active–Region Safe Operating Area 104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10–1 10–2 ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find Z θJA(t), multiply the value obtained from Figure 17 by the steady state value RθJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569. ICBO AND ICEX @ VBE(off) = 3.0 V –4 0 –2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) Figure 19. Typical Collector Leakage Current 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA70 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V CASE 029–04 (TO–226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 MPSA70 Motorola reserves the right to make changes without further notice to any products herein. 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