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NCL30085BDR2G

NCL30085BDR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOIC8

  • 描述:

    IC LED DVR CURR MODE 8SOIC

  • 数据手册
  • 价格&库存
NCL30085BDR2G 数据手册
NCL30085 Power Factor Corrected Quasi-Resonant Primary Side Current-Mode Controller for LED Lighting with Line Step Dimming and Thermal Foldback The NCL30085 is a power factor corrected flyback controller targeting isolated and non−isolated constant current LED drivers. The controller operates in a quasi−resonant mode to provide optimal efficiency. Thanks to a novel control method, the device is able to tightly regulate a constant LED current from the primary side. This removes the need for secondary side feedback circuitry, biasing and an optocoupler. The device is highly integrated with a minimum number of external components. A robust suite of safety protection is built in to simplify the design. This device is specifically intended for very compact, space efficient designs and supports 3 levels of log step dimming which allows light output reduction by toggling the main AC switch on and off to signal the controller to reduce the LED current point down to 5% of full load. Features • • • • • • • • • • www.onsemi.com 8 1 SOIC−8 NB CASE 751 MARKING DIAGRAM 8 L30085x ALYW G 1 L30085x = Specific Device Code x = A, B A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb-Free Package Quasi−resonant Peak Current−mode Control Operation Constant Current Control with Primary Side Feedback PIN CONNECTIONS Tight LED Constant Current Regulation of ±2% Typical 1 VCC ZCD Power Factor Correction DRV VS 3 Step Dimming (70/25/5%) Line Feedforward for Enhanced Regulation Accuracy GND COMP Low Start−up Current (10 mA typ.) CS SD Wide Vcc Range (Top View) 300 mA / 500 mA Totem Pole Driver with 12 V Gate Clamp Robust Protection Features ORDERING INFORMATION ♦ OVP on VCC See detailed ordering and shipping information in the package dimensions section on page 26 of this data sheet. ♦ Programmable Over Voltage / LED Open Circuit Protection ♦ Cycle−by−cycle Peak Current Limit ♦ Winding Short Circuit Protection ♦ Secondary Diode Short Protection • Pb−Free, Halide−Free MSL1 Product ♦ Output Short Circuit Protection Typical Applications ♦ Current Sense Short Protection • Integral LED Bulbs and Tubes ♦ User Programmable NTC Based Thermal Foldback ♦ Thermal Shutdown • LED Light Engines ♦ Vcc Undervoltage Lockout • LED Drivers/Power Supplies ♦ Brown−out Protection © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 3 1 Publication Order Number: NCL30085/D NCL30085 . Aux . . NCL30085 1 8 2 7 3 6 4 5 Rsense Figure 1. Typical Application Schematic for NCL30085 Table 1. PIN FUNCTION DESCRIPTION Pin No Pin Name Function Pin Description 1 ZCD Zero Crossing Detection 2 VS Input Voltage Sensing 3 COMP Filtering Capacitor This pin receives a filtering capacitor for power factor correction. Typical values ranges from 1 − 4.70 mF 4 SD Thermal Foldback and Shutdown Connecting an NTC to this pin allows the user to program thermal current foldback threshold and slope. A Zener diode can also be used to pull−up the pin and stop the controller for adjustable OVP protection. 5 CS Current Sense 6 GND − 7 DRV Driver Output The driver’s output to an external MOSFET 8 VCC IC Supply Pin This pin is the positive supply of the IC. The circuit starts to operate when VCC exceeds 18 V and turns off when VCC goes below 8.8 V (typical values). After start−up, the operating range is 9.4 V up to 26 V (VCC (OVP ) minimum level). Connected to the auxiliary winding, this pin detects the core reset event. This pin observes the input voltage rail and protects the LED driver in case of too low mains conditions (brown−out). This pin also observes the input voltage rail for: − Power Factor Correction − Valley lockout − Step dimming This pin monitors the primary peak current. Controller ground pin. www.onsemi.com 2 NCL30085 Internal Circuit Architecture Enable Over Voltage Protection (Auto−recovery or Latched) V DD STOP Aux_SCP V REF OFF Over Temp. Protection VCC UVLO Fault Management VCC Management Latch (Auto−recovery or Latched) SD Thermal Foldback Internal Thermal Shutdown V TF VCC_max VCC Over Voltage Protection WOD_SCP BO_NOK DRV FF_mode V VS V REF VCC FF_mode ZCD Zero Crossing Detection Logic (ZCD Blanking, Time−Out, ...) Clamp Circuit Valley Selection Frequency Foldback Aux. Winding Short Circuit Prot. Aux_SCP Q CS_ok Q R Line feed−forward CS DRV S VREFX V VS VVS STOP VREFX Power Factor and Constant−Current Control Leading Edge Blanking CS_reset Ipkmax Maximum on time STOP t on,max Ipkmax Max. Peak Current Limit COMP BO_NOK UVLO VVS CS_ok CS Short Protection STEP_DIM t on,max Winding and Output diode Short Circuit Protection VREFX Dimming control WOD_SCP VS Brown−Out VREF GND VTF Figure 2. Internal Circuit Architecture www.onsemi.com 3 NCL30085 Table 2. MAXIMUM RATINGS TABLE Symbol Rating Value Unit VCC(MAX) ICC(MAX) Maximum Power Supply voltage, VCC pin, continuous voltage Maximum current for VCC pin −0.3 to 30 Internally limited V mA VDRV(MAX) IDRV(MAX) Maximum driver pin voltage, DRV pin, continuous voltage Maximum current for DRV pin −0.3, VDRV (Note 1) −300, +500 V mA VMAX IMAX Maximum voltage on low power pins (except DRV and VCC pins) Current range for low power pins (except DRV and VCC pins) −0.3, 5.5 (Notes 2 and 5) −2, +5 V mA RθJ−A Thermal Resistance Junction−to−Air 180 °C/W TJ(MAX) Maximum Junction Temperature 150 °C Operating Temperature Range −40 to +125 °C Storage Temperature Range −60 to +150 °C ESD Capability, HBM model (Note 3) 3.5 kV ESD Capability, MM model (Note 3) 250 V ESD Capability, CDM model (Note 3) 2 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRV is the DRV clamp voltage VDRV(high) when VCC is higher than VDRV(high). VDRV is VCC otherwise. 2. This level is low enough to guarantee not to exceed the internal ESD diode and 5.5−V Zener diode. More positive and negative voltages can be applied if the pin current stays within the −2−mA / 5−mA range. 3. This device contains ESD protection and exceeds the following tests: Human Body Model 3500 V per JEDEC Standard JESD22−A114E, Machine Model Method 250 V per JEDEC Standard JESD22−A115B, Charged Device Model 2000 V per JEDEC Standard JESD22−C101E. 4. This device contains latch−up protection and has been tested per JEDEC Standard JESD78D, Class I and exceeds ±100 mA 5. Recommended maximum VS voltage for optimal operation is 4 V. −0.3 V to +4.0 V is hence, the VS pin recommended range. Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V, VCS = 0 V, VSD = 1.5 V) For min/max values TJ = −40°C to +125°C, VCC = 12 V) Description Test Condition Symbol Min Typ Max Unit VCC rising VCC rising VCC falling VCC(on) VCC(off) VCC(HYS) VCC(reset) 16.0 8.2 8 4 18.0 8.8 − 5 20.0 9.4 − 6 VCC Over Voltage Protection Threshold VCC(OVP) 25.5 26.8 28.5 V VCC(off) noise filter VCC(reset) noise filter tVCC(off) tVCC(reset) − − 5 20 − − ms ICC(start) − 13 30 mA 58 75 mA STARTUP AND SUPPLY CIRCUITS Supply Voltage Startup Threshold Minimum Operating Voltage Hysteresis VCC(on) – VCC(off) Internal logic reset V Startup current Startup current in fault mode Supply Current Device Disabled/Fault Device Enabled/No output load on pin 7 Device Switching (FSW = 65 kHz) ICC(sFault) mA VCC > VCC(off) Fsw = 65 kHz CDRV = 470 pF, Fsw = 65 kHz ICC1 ICC2 ICC3 0.8 – − 1.0 2.5 3.0 1.2 4.0 4.5 Maximum Internal current limit VILIM 0.95 1.00 1.05 V Leading Edge Blanking Duration for VILIM tLEB 240 300 360 ns IFF 35 40 45 mA CURRENT SENSE Line feed−forward current DRV high, VVS = 2 V 6. Guaranteed by Design 7. A NTC is generally placed between the SD and GND pins. Parameters RTF(start), RTF(stop), ROTP(off) and ROTP(on) give the resistance the NTC must exhibit to respectively, enter thermal foldback, stop thermal foldback, trigger the OTP limit and allow the circuit recovery after an OTP situation. 8. At startup, when VCC reaches VCC(on), the controller blanks OTP for more than 250 ms to avoid detecting an OTP fault by allowing the SD pin voltage to reach its nominal value if a filtering capacitor is connected to the SD pin. www.onsemi.com 4 NCL30085 Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V, VCS = 0 V, VSD = 1.5 V) For min/max values TJ = −40°C to +125°C, VCC = 12 V) Description Test Condition Symbol Min Typ Max Unit tILIM − 100 150 ns CURRENT SENSE Propagation delay from current detection to gate off−state Maximum on−time ton(MAX) 26 36 46 ms Threshold for immediate fault protection activation VCS(stop) 1.35 1.50 1.65 V Leading Edge Blanking Duration for VCS(stop) tBCS − 150 − ns Current source for CS to GND short detection ICS(short) 400 500 600 mA VCS(low) 30 65 100 mV Drive Resistance DRV Sink DRV Source RSNK RSRC − − 13 30 − − Drive current capability DRV Sink (Note 6) DRV Source (Note 6) ISNK ISRC − − 500 300 − − Current sense threshold for CS to GND short detection VCS rising GATE DRIVE W mA Rise Time (10% to 90%) CDRV = 470 pF tr – 40 − ns Fall Time (90% to 10%) CDRV = 470 pF tf – 30 − ns DRV Low Voltage VCC = VCC(off)+0.2 V CDRV = 470 pF, RDRV=33 kW VDRV(low) 8 – − V DRV High Voltage VCC = VCC(MAX) CDRV = 470 pF, RDRV=33 kW VDRV(high) 10 12 14 V Upper ZCD threshold voltage VZCD rising VZCD(rising) − 90 150 mV Lower ZCD threshold voltage VZCD falling VZCD(falling) 35 55 − mV VZCD(HYS) 15 − − mV ZERO VOLTAGE DETECTION CIRCUIT ZCD hysteresis Propagation Delay from valley detection to DRV high VZCD falling TDEM − 100 300 ns Blanking delay after on−time VREFX > 30% VREF TZCD(blank1) 1.12 1.50 1.88 ms Blanking Delay at light load VREFX < 25% VREF TZCD(blank2) 0.56 0.75 0.94 ms TTIMO 5.0 6.5 8.0 ms RZCD(PD) − 200 − kW Reference Voltage at TJ = 25°C VREF 245 250 255 mV Reference Voltage TJ = 25°C to 100°C VREF 242.5 250.0 257.5 mV Reference Voltage TJ = −40°C to 125°C VREF 240 250 260 mV VCS(low) 20 50 100 mV Vratio − 4 − − GEA 40 50 200 60 mS Timeout after last DEMAG transition Pulling−down resistor VZCD = VZCD(falling) CONSTANT CURRENT AND POWER FACTOR CONTROL Current sense lower threshold VCS falling Vcontrol to current setpoint division ratio Error amplifier gain VREFX=VREF (no dimming) VREFX=25%* VREF 6. Guaranteed by Design 7. A NTC is generally placed between the SD and GND pins. Parameters RTF(start), RTF(stop), ROTP(off) and ROTP(on) give the resistance the NTC must exhibit to respectively, enter thermal foldback, stop thermal foldback, trigger the OTP limit and allow the circuit recovery after an OTP situation. 8. At startup, when VCC reaches VCC(on), the controller blanks OTP for more than 250 ms to avoid detecting an OTP fault by allowing the SD pin voltage to reach its nominal value if a filtering capacitor is connected to the SD pin. www.onsemi.com 5 NCL30085 Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V, VCS = 0 V, VSD = 1.5 V) For min/max values TJ = −40°C to +125°C, VCC = 12 V) Description Test Condition Symbol Min Typ Max Unit VREFX=VREF (no dimming) VREFX=25%* VREF IEA ±60 ±240 mA No dimming, COMP pin grounded IEA_STUP 140 mA CONSTANT CURRENT AND POWER FACTOR CONTROL Error amplifier current capability COMP Pin Start−up Current Source LINE FEED FORWARD KLFF 18 20 22 mS DRV high, VVS = 2 V IFF 35 40 45 mA VVS > 5 V Ioffset(MAX) 80 100 120 mA Threshold for high− line range (HL) detection VVS rising VHL 2.28 2.40 2.52 V Threshold for low−line range (LL) detection VVS falling VLL 2.18 2.30 2.42 V Blanking time for line range detection tHL(blank) 15 25 35 ms Valley Lockout First step valley in High−Line. Second step valley in High−Line. Third step valley in High−Line. First step valley in Low−Line. Second step valley in Low−Line. Third step valley in Low−Line. VHL100% VHL70% VHL25% VLL100% VLL70% VLL25% VVS to ICS(offset) conversion ratio Line feed−forward current on CS pin Offset current maximum value VALLEY LOCKOUT SECTION 2 3 6 1 2 5 FREQUENCY FOLDBACK Additional dead time VREFX = 25%*VREF tFF1LL 1.4 2.0 2.6 ms Additional dead time VREFX = 5%*VREF tFF2HL − 40 − ms FSW = 65 kHz TSHDN 130 150 170 _C Thermal Shutdown Hysteresis TSHDN(HYS) − 50 – _C Threshold voltage for output short circuit or aux. winding short circuit detection VZCD(short) 0.8 1.0 1.2 V tOVLD 70 90 110 ms Auto−recovery timer duration trecovery 3 4 5 s SD pin Clamp series resistor RSD(clamp) FAULT PROTECTION Thermal Shutdown (Note 6) Short circuit detection Timer Clamped voltage VZCD < VZCD(short) 1.6 kW SD pin open VSD(clamp) 1.13 1.35 1.57 V VSD rising VOVP 2.35 2.50 2.65 V Delay before OVP or OTP confirmation (OVP and OTP) TSD(delay) 22.5 30.0 37.5 ms Reference current for direct connection of an NTC (Note 8) IOTP(REF) 80 85 90 mA SD pin detection level for OVP Fault detection level for OTP (Note 7) VSD falling VOTP(off) 0.47 0.50 0.53 V SD pin level for operation recovery after an OTP detection VSD rising VOTP(on) 0.66 0.70 0.74 V 6. Guaranteed by Design 7. A NTC is generally placed between the SD and GND pins. Parameters RTF(start), RTF(stop), ROTP(off) and ROTP(on) give the resistance the NTC must exhibit to respectively, enter thermal foldback, stop thermal foldback, trigger the OTP limit and allow the circuit recovery after an OTP situation. 8. At startup, when VCC reaches VCC(on), the controller blanks OTP for more than 250 ms to avoid detecting an OTP fault by allowing the SD pin voltage to reach its nominal value if a filtering capacitor is connected to the SD pin. www.onsemi.com 6 NCL30085 Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V, VCS = 0 V, VSD = 1.5 V) For min/max values TJ = −40°C to +125°C, VCC = 12 V) Description Test Condition Symbol Min OTP blanking time when circuit starts operating (Note 8) tOTP(start) 250 SD pin voltage at which thermal fold−back starts (VREF is decreased) VTF(start) 0.94 SD pin voltage at which thermal fold−back stops (VREF is clamped to VREF50) VTF(stop) Typ Max Unit 370 ms 1.00 1.06 V 0.64 0.69 0.74 V FAULT PROTECTION VTF(start) over IOTP(REF) ratio (Note 7) TJ = +25°C to +125°C RTF(start) 10.8 11.7 12.6 kW VTF(stop) over IOTP(REF) ratio (Note 7) TJ = +25°C to +125°C RTF(stop) 7.4 8.1 8.8 kW VOTP(off) over IOTP(REF) ratio (Note 7) TJ = +25°C to +125°C ROTP(off) 5.4 5.9 6.4 kW VOTP(on) over IOTP(REF) ratio (Note 7) TJ = +25°C to +125°C ROTP(on) 7.5 8.1 8.7 kW VREFX @ VSD = 600 mV (percent of VREF) SD pin falling, no OTP detection VREF(50) 40 50 60 % Brown−Out ON level (IC start pulsing) VS rising VBO(on) 0.95 1.00 1.05 V Brown−Out OFF level (IC shuts down) VS falling VBO(off) 0.85 0.90 0.95 V BROWN−OUT ms BO comparators delay tBO(delay) 30 Brown−Out blanking time tBO(blank) 15 25 35 ms VS pin Pulling−down Current VS = VBO(on) IBO(bias) 50 250 450 nA Step Dimming Reset Time VS < VBO(off) tstep−reset 2.4 3.2 4.0 s 6. Guaranteed by Design 7. A NTC is generally placed between the SD and GND pins. Parameters RTF(start), RTF(stop), ROTP(off) and ROTP(on) give the resistance the NTC must exhibit to respectively, enter thermal foldback, stop thermal foldback, trigger the OTP limit and allow the circuit recovery after an OTP situation. 8. At startup, when VCC reaches VCC(on), the controller blanks OTP for more than 250 ms to avoid detecting an OTP fault by allowing the SD pin voltage to reach its nominal value if a filtering capacitor is connected to the SD pin. www.onsemi.com 7 NCL30085 TYPICAL CHARACTERISTICS 20.0 9.4 9.3 19.5 9.2 9.1 18.5 VCC(off) (V) VCC(on) (V) 19.0 18.0 17.5 17.0 −25 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3. VCC Start−up Threshold vs. Temperature Figure 4. VCC Minimum Operating Voltage vs. Temperature 11.5 6.0 11.0 5.8 5.6 VCC(reset) (V) 5.4 10.0 9.5 9.0 5.2 5.0 4.8 4.6 8.5 4.4 8.0 7.5 −50 −25 TJ, JUNCTION TEMPERATURE (°C) 10.5 VCC(hys) (V) 8.7 8.6 8.5 8.4 8.3 8.2 −50 16.5 16.0 −50 9.0 8.9 8.8 −25 0 25 50 75 100 125 4.2 4.0 −50 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Hysteresis (VCC(on) − VCC(off)) vs. Temperature Figure 6. VCC(reset) vs. Temperature www.onsemi.com 8 NCL30085 TYPICAL CHARACTERISTICS 40 28.0 27.8 35 30 27.2 27.0 ICC(start) (mA) VCC(ovp) (V) 27.6 27.4 26.8 26.6 26.4 20 15 10 26.2 26.0 25.8 25.6 −50 25 5 −25 0 25 50 75 100 125 0 −50 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. VCC Over Voltage Protection Threshold vs. Temperature Figure 8. Start−up Current vs. Temperature 2.0 150 1.8 125 ICC1 (mA) ICC(sfault) (mA) 1.6 100 75 50 1.4 1.2 1.0 0.8 25 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 −50 −25 0 25 50 75 100 125 0.4 −50 150 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Start−up Current in Fault Mode vs. Temperature Figure 10. ICC1 vs. Temperature 125 150 5.0 4.5 4.0 ICC3 (mA) ICC2 (mA) 0 −50 0.6 3.5 3.0 2.5 2.0 1.5 −25 0 25 50 75 100 125 1.0 −50 150 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. ICC2 vs. Temperature Figure 12. ICC3 vs. Temperature www.onsemi.com 9 125 150 NCL30085 1.05 400 1.04 380 360 1.02 340 1.01 320 TLEB (ns) 1.03 1.00 0.99 280 260 0.97 240 0.96 0.95 −50 220 −25 0 25 50 75 100 125 200 −50 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 13. Maximum Internal Current Limit vs. Temperature Figure 14. Leading Edge Blanking vs. Temperature 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 −50 50 48 46 44 42 40 38 36 34 −25 0 25 50 75 100 125 32 30 −50 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 15. Current Limit Propagation Delay vs. Temperature Figure 16. Maximum On−time vs. Temperature 1.60 220 210 1.58 200 190 1.56 1.54 1.52 TBCS (ns) VCS(stop) (V) 300 0.98 TON(max) (ms) TILIM (ns) VILIM (V) TYPICAL CHARACTERISTICS 1.50 1.48 1.46 1.44 1.42 1.40 1.38 −50 −25 0 25 50 75 100 125 150 180 170 160 150 140 130 120 110 100 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 17. VCS(stop) vs. Temperature Figure 18. Leading Edge Blanking Duration for VCS(stop) vs. Temperature www.onsemi.com 10 NCL30085 TYPICAL CHARACTERISTICS 600 100 580 90 560 80 VCS(low) (mV) ICS(short) (mA) 540 520 500 480 460 −25 0 25 50 75 100 125 20 −50 150 25 50 75 100 125 150 Figure 19. ICS(short) vs. Temperature Figure 20. VCS(low), VCS Rising vs. Temperature 14 12 RSRC (W) RSNK (W) 0 TJ, JUNCTION TEMPERATURE (°C) 16 10 8 6 4 −25 0 25 50 75 100 125 150 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Sink Gate Drive Resistance vs. Temperature Figure 22. Source Gate Drive Resistance vs. Temperature 50 45 45 40 40 35 35 30 30 tF (ns) 50 25 25 20 20 15 15 10 10 5 0 −50 −25 TJ, JUNCTION TEMPERATURE (°C) 18 tr (ns) 50 30 20 2 0 −50 60 40 440 420 400 −50 70 −25 0 25 50 75 100 125 150 5 0 −50 −25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 23. Gate Drive Rise Time vs. Temperature Figure 24. Gate Drive Fall Time (CDRV = 470 pF) vs. Temperature www.onsemi.com 11 125 150 NCL30085 TYPICAL CHARACTERISTICS 9.8 15.0 9.6 14.5 14.0 VDRV(high) (V) VDRV(low) (V) 9.4 9.2 9.0 8.8 12.0 11.0 8.4 8.2 −50 −25 0 25 50 75 100 125 10.5 10.0 −50 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 25. DRV Low Voltage vs. Temperature Figure 26. DRV High Voltage vs. Temperature 150 80 140 130 75 120 110 65 VZCD(falling) (mV) 70 100 90 80 70 60 55 50 45 60 50 40 40 30 −50 35 30 −50 −25 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 27. Upper ZCD Threshold Voltage vs. Temperature Figure 28. Lower ZCD Threshold vs. Temperature 50 2.0 45 1.9 40 1.8 35 1.7 30 25 20 15 10 5 0 −50 −25 TJ, JUNCTION TEMPERATURE (°C) tZCD(blank1) (ms) VZCD(rising) (mV) 13.0 12.5 11.5 8.6 VZCD(HYS) (mV) 13.5 1.6 1.5 1.4 1.3 1.2 −25 0 25 50 75 100 125 150 1.1 1.0 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 29. ZCD Hysteresis vs. Temperature Figure 30. ZCD Blanking Delay vs. Temperature www.onsemi.com 12 NCL30085 TYPICAL CHARACTERISTICS 7.8 256 255 254 253 7.6 7.4 252 VREF (mV) TTIMO (ms) 7.2 7.0 6.8 6.6 6.4 246 −25 0 25 50 75 100 125 245 244 −50 150 25 50 75 100 125 150 Figure 31. ZCD Time−out vs. Temperature Figure 32. Reference Voltage vs. Temperature 110 60 58 90 56 54 70 GEA (mS) VCS(low) (mV) 0 TJ, JUNCTION TEMPERATURE (°C) 100 60 50 52 50 48 40 30 46 20 10 −50 44 −25 0 25 50 75 100 125 42 −50 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 33. Current Sense Lower Threshold (VCS Falling) vs. Temperature Figure 34. Error Amplifier Trans−conductance Gain vs. Temperature 44 21.5 43 21.0 42 20.5 41 IFF (mA) 22.0 20.0 40 19.5 39 19.0 38 18.5 37 18.0 −50 −25 TJ, JUNCTION TEMPERATURE (°C) 80 KLFF (mS) 249 248 247 6.2 6.0 5.8 −50 251 250 −25 0 25 50 75 100 125 150 36 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 35. Feedforward VVS to ICS(offset) Conversion Ratio vs. Temperature Figure 36. Line Feedforward Current on CS Pin (@ VVS = 2 V) vs. Temperature www.onsemi.com 13 NCL30085 TYPICAL CHARACTERISTICS 120 2.55 115 2.50 2.45 105 VHL (V) Ioffset(MAX) (mA) 110 100 95 2.40 2.35 90 2.30 85 80 −50 −25 0 25 50 75 100 125 2.25 −50 150 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 37. Ioffset(MAX) vs. Temperature Figure 38. Threshold for High−line Range Detection vs. Temperature 2.60 40 2.55 38 36 THL(blank) (ms) 2.50 2.45 VLL (V) −25 2.40 2.35 34 32 30 28 26 2.30 24 2.25 −25 0 25 50 75 100 125 22 20 −50 150 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 39. Threshold for Low−line Range Detection vs. Temperature Figure 40. Blanking Time for Low−line Range Detection vs. Temperature 1.20 115 1.15 110 1.10 105 1.05 100 1.00 0.95 95 90 0.90 85 0.85 80 0.80 −50 −25 TJ, JUNCTION TEMPERATURE (°C) tOVLD (ms) VZCD(short) (V) 2.20 −50 −25 0 25 50 75 100 125 150 75 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 41. Threshold Voltage for Output Short Circuit Detection vs. Temperature Figure 42. Short Circuit Detection Timer vs. Temperature www.onsemi.com 14 NCL30085 TYPICAL CHARACTERISTICS 5.00 2.20 2.10 4.75 RSD(clamp) (kW) Trecovery (s) 4.50 4.25 4.00 3.75 3.50 3.00 −50 1.50 1.40 1.20 1.10 1.00 −50 −25 0 25 50 75 100 125 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 43. Auto−recovery Timer Duration vs. Temperature Figure 44. SD Pin Clamp Series Resistor vs. Temperature 1.60 2.58 1.55 2.56 1.50 2.54 1.45 2.52 1.40 VOVP (V) VSD(clamp) (V) 1.70 1.60 1.30 3.25 1.35 1.30 2.50 2.48 2.46 1.25 1.20 2.44 1.15 1.10 −50 2.42 −25 0 25 50 75 100 125 2.40 −50 150 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 45. SD Pin Clamp Voltage vs. Temperature Figure 46. SD Pin OVP Threshold Voltage vs. Temperature 91 90 36 89 88 IOTP(REF) (mA) 34 32 30 28 26 24 22 −50 −25 TJ, JUNCTION TEMPERATURE (°C) 38 TSD(delay) (ms) 2.00 1.90 1.80 −25 0 25 50 75 100 125 150 87 86 85 84 83 82 81 80 79 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 47. TSD(delay) vs. Temperature Figure 48. IOTP(REF) vs. Temperature www.onsemi.com 15 NCL30085 12.5 12.4 12.3 12.2 12.1 12.0 11.9 11.8 11.7 11.6 11.5 11.4 11.3 11.2 11.1 11.0 −50 8.8 8.7 RTF(stop) (kW) RTF(start) (kW) TYPICAL CHARACTERISTICS −25 0 25 50 75 100 125 8.2 8.1 8.0 7.9 7.8 7.7 7.6 −50 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 49. RTF(start) vs. Temperature Figure 50. RTF(stop) vs. Temperature 8.8 8.7 8.6 6.4 6.3 6.2 ROTP(on) (kW) 6.1 ROTP(off) (kW) 8.6 8.5 8.4 8.3 6.0 5.9 5.8 5.7 8.5 8.4 8.3 8.2 8.1 8.0 7.9 5.6 −25 0 25 50 75 100 125 7.8 7.7 7.6 −50 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 51. ROTP(off) vs. Temperature Figure 52. ROTP(on) vs. Temperature 55 1.05 54 1.04 53 1.03 52 1.02 VBO(on) (V) VREF(50) (%) 5.5 5.4 −50 51 50 49 1.01 1.00 0.99 48 0.98 47 0.97 46 45 −50 0.96 0.95 −50 −25 0 25 50 75 100 125 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 53. Ratio VREF(50) over VREF vs. Temperature Figure 54. Brown−out ON Level vs. Temperature www.onsemi.com 16 NCL30085 TYPICAL CHARACTERISTICS 0.95 0.94 0.93 tBO(blank) (ms) 0.91 0.90 0.89 0.88 0.87 0.86 0.85 −50 −25 0 25 50 75 100 125 150 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 55. Brown−out OFF Level vs. Temperature Figure 56. Brown−out Blanking Time vs. Temperature 500 450 400 350 IBO(bias) (nA) VBO(off) (V) 0.92 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 −50 300 250 200 150 100 50 0 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 57. VS Pin Pulling−down Current vs. Temperature www.onsemi.com 17 150 NCL30085 Application Information The NCL30085 is a driver for power−factor corrected flyback and non−isolated buck−boost and SEPIC converters. It implements a current−mode, quasi−resonant architecture including valley lockout and frequency fold−back capabilities for maintaining high−efficiency performance over a wide load range. A proprietary circuitry ensures both accurate regulation of the output current (without the need for a secondary−side feedback) and near−unity power factor correction. The circuit contains a suite of powerful protections to ensure a robust LED driver design without the need for extra external components or overdesign. • Quasi−Resonance Current−Mode Operation: implementing quasi−resonance operation in peak current−mode control, the NCL30085 optimizes the efficiency by turning on the MOSFET when its drain−source voltage is minimal (valley). In light−load conditions, the circuit changes valleys to reduce the switching losses. For stable operation, the valley at which the MOSFET switches on remains locked until the input voltage or the output current set−point significantly changes. • Primary−Side Constant−Current Control with Power Factor Correction: a proprietary circuitry allows the LED driver to achieve both near−unity power factor correction and accurate regulation of the output current without requiring any secondary−side feedback (no optocoupler needed). A power factor as high as 0.99 and an output current deviation below ±2% are typically obtained. • Step dimming: The step dimming function decreases the output current from 100% to 5% of its nominal value in 3 discrete steps. Whenever a brown−out is detected, the output current is decreased by reducing the reference voltage VREF. The step−dimming function is reset if the VS pin remains below the lower brown−out threshold (VBO(off)) for more than 3 s typically. • Main protection features: ♦ Over Temperature Thermal Fold−back / Shutdown/ Over Voltage Protection: the NCL30085 features a gradual current foldback to protect the driver from excessive temperature down to 50% of the programmed current. This represents a power reduction of the LED by more than 50%. If the temperature continues to rise after this point to a ♦ ♦ ♦ ♦ ♦ second level, the controller stops operating. This mode would only be expected to be reached if there is a severe fault. The first and second temperature thresholds depend on the value of the NTC connected to the SD pin. Note, the SD pin can also be used to shutdown the device by pulling this pin below the VOTP(off) min level. A Zener diode can also be used to pull−up the pin and stop the controller for adjustable OVP protection. Both protections are latching−off (A version) or auto−recovery (the circuit can recover operation after 4−s delay has elapsed − B version). Cycle−by−cycle peak current limit: when the current sense voltage exceeds the internal threshold VILIM, the MOSFET is immediately turned off for that switch cycle. Winding or Output Diode Short−Circuit Protection: an additional comparator senses the CS signal and stops the controller if it exceeds 150% x VILIM for 4 consecutive cycles. This feature can protect the converter if a winding is shorted or if the output diode is shorted or simply if the transformer saturates. This protection is latching−off (A version) or auto−recovery (B version). Output Short−circuit protection: if the ZCD pin voltage remains low for a 90−ms time interval, the controller detects that the output or the ZCD pin is grounded and hence, stops operation. This protection is latching−off (A version) or auto−recovery (B version). Open LED protection: if the VCC pin voltage exceeds the OVP threshold, the controller shuts down and waits 4 seconds before restarting switching operation. Floating or Short Pin Detection: the circuit can detect most of these situations which helps pass safety tests. Power Factor and Constant Current Control The NCL30085 embeds an analog/digital block to control the power factor and regulate the output current by monitoring the ZCD, VS and CS pin voltages (signals ZCD, VVS and VCS of Figure 58). This circuitry generates the current setpoint (VCONTROL/4) and compares it to the current sense signal (VCS) to dictate the MOSFET turning off event when VCS exceeds VCONTROL/4. www.onsemi.com 18 NCL30085 ZCD VCS STOP VREFX VVS PWM Latch reset Power Factor and Constant−Current Control COMP C1 Figure 58. Power Factor and Constant−Current Control • The COMP pin is grounded when the circuit is off. The As illustrated in Figure 58, the VS pin provides the sinusoidal reference necessary for shaping the input current. The obtained current reference is further modulated so that when averaged over a half−line period, it is equal to the output current reference (VREFX). This averaging process is made by an internal Operational Trans−conductance Amplifier (OTA) and the capacitor connected to the COMP pin (C1 of Figure 58). Typical COMP capacitance is 1 mF and should not be less than 470 nF to ensure stability. The COMP ripple does not affect the power factor performance as the circuit digitally eliminates it when generating the current setpoint. If the VS pin properly conveys the sinusoidal shape, power factor will be close to unity and the Total Harmonic Distortion (THD) will be low. In any case, the output current will be well regulated following the equation below: I out + V REFX 2N PSR sense • (eq. 1) Where: • NPS is the secondary to primary transformer turns NPS = NS/NP • Rsense is the current sense resistor (see Figure 1). • VREFX is the output current internal reference. VREFX = VREF (250 mV typically) at full load. • The output current reference (VREFX) is 250 mV typically (VREF). In the event that step dimming is engaged, VREFX takes a lower value based on the step−dimming level (see “step dimming” section) or if the temperature is high enough to activate the thermal fold−back (see “protections” section). If a major fault is detected, the circuit enters the latched−off or auto−recovery mode and the COMP pin is grounded (except in an UVLO condition). This ensures a clean start−up when the circuit resumes operation. • Start−up Sequence Generally an LED lamp is expected to emit light in < 1 sec and typically within 300 ms. The start−up phase consists of the time to charge the VCC capacitor, initiate startup and begin switching and the time to charge the output capacitor until sufficient current flows into the LED string. To speed−up this phase, the following defines the start−up sequence: average COMP voltage needs to exceed the VS pin peak value to have the LED current properly regulated (whatever the current target is). To speed−up the COMP capacitance charge and shorten the start−up phase, an internal 80−mA current source adds to the OTA sourced current (60 mA max typically) to charge up the COMP capacitance. The 80−mA current source remains on until the OTA starts to sink current as a result of the COMP pin voltage sufficient rise. At that moment, the COMP pin being near its steady−state value, it is only driven by the OTA. Whatever the step−dimming state is, the output current reference is set maximum (VREFX = VREF) until the ZCD pin voltage reaches the 1−V VZCD(short) threshold. This prevents the circuit from detecting an output short (AUX_SCP protection trips if the ZCD pin voltage does not exceed 1−V VZCD(short) threshold within a 90−ms delay) just because dimming would make the output voltage charge up slowly. If the system cannot start−up in one VCC cycle, the AUX_SCP 90−ms blanking time is not reset and VREFX remains maximum for all the necessary VCC cycles until the ZCD pin voltage reaches the 1−V VZCD(short) threshold. If VCC drops below the VCC(off) threshold because the circuit fails to start−up properly on the first attempt, a new try takes place as soon as VCC is recharged to VCC(on). The COMP voltage is not reset at that moment. Instead, the new attempt starts with the COMP level obtained at the end of the previous operating phase. If the load is shorted, the circuit will operate in hiccup mode with VCC oscillating between VCC(off) and VCC(on) until the AUX_SCP protection trips (AUX_SCP is triggered if the ZCD pin voltage does not exceed 1 V within a 90−ms operation period of time thus indicating a short to ground of the ZCD pin or an excessive load preventing the output voltage from rising). The NCL30085A latches off in this case. With the B version, the AUX_SCP protection forces the 4−s auto−recovery delay to reduce the operation duty−ratio. Figure 59 illustrates a start−up sequence with the output shorted to ground, in this second case. www.onsemi.com 19 NCL30085 VCC(on) VCC VCC(off) (‧‧‧ ) (‧‧‧ ) time AUX_SCPtrips as t 1 + t2 + t3 = tOVLD (tOVLD ^90 ms) DRV t1 t3 t1 t2 t3 time t2 trecovery (^4 s ) trecovery (^4 s ) Figure 59. Start−up Sequence in a Load Short−circuit Situation (auto−recovery version) Step Dimming is selected by VREFX. This avoids long startup time while dimming at low output current value. The step dimming function decreases the output current from 100% to 5% of its nominal value in 3 discrete steps. The table below shows the different steps value and the corresponding reference voltage value. Each time a brown−out is detected, the output current is decreased by decreasing the reference voltage VREF. A counter is incremented by the BO_NOK (brown−out not OK) signal and selects one of the four corresponding reference thresholds: VREF, VREF70, VREF25, VREF5. After counting up to 4, the counter is reset. VCC C1 C2 Table 4. DIMMING STEPS Dimming Step Iout ON 100% 1 70% 2 25% 3 5% Figure 60. Split VCC Supply The step−dimming function is reset if the VS pin is maintained below the VBO(off) brown−out threshold for the Tstep_reset time. Tstep_reset is 3 s typically. In other words, any brown−out event that is longer than Tstep_reset, leads the controller to re−start at 100% current setting. Note: The step dimming state is memorized until VCC crosses VCC(reset) or VVS is below VBO(off) for 3 s (typical). The circuit consumption is optimized (in particular, it equals ICC(fault) when VCC is lower than VCC(off)) so that the VCC voltage does not drop too fast for the step dimming brown−out event. The power supply designer should use a split VCC circuit as shown in Figure 60 where a small capacitor C1 is used for a fast start−up while a larger C2 capacitance provides the necessary storage capability for step dimming. During step dimming, at startup, the controller generates the first DRV pulses after 1 time−out pulse even if a higher valley number Zero Crossing Detection Block The ZCD pin detects when the drain−source voltage of the power MOSFET reaches a valley by crossing below the 55−mV internal threshold. At startup or in case of extremely damped free oscillations, the ZCD comparator may not be able to detect the valleys. To avoid such a situation, the NCL30085 features a time−out circuit that generates pulses if the voltage on ZCD pin stays below the 55−mV threshold for 6.5 ms. The time−out also acts as a substitute clock for the valley detection and simulates a missing valley in case the free oscillations are too damped. www.onsemi.com 20 NCL30085 t ZCD(blank1) t ZCD(blank) FF_mode t ZCD(blank2) ZCD VZCD(TH) + − Clock Time−Out V ZCD(short) + + − − S Q Aux_SCP Q 90−ms Timer R 4−s Timer (auto−recovery version) Vcc
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