NCP153MX330180TCG

NCP153 LDO Regulator - Dual, Low IQ 130 mA The NCP153 is 130 mA, Dual Output Linear Voltage Regulator that provides a very stable and accurate voltage with very low noise and high Power Supply Rejection Ratio (PSRR) suitable for RF applications. In order to optimize performance for battery operated portable applications, the NCP153 employs the Adaptive Ground Current Feature for low ground current consumption during light−load conditions. Device also incorporates foldback current protection to reduce short circuit current and protect powered devices. Features • Operating Input Voltage Range: 1.9 V to 5.25 V • Two Independent Output Voltages: MARKING DIAGRAM GA M XDFN6, 1.2x1.2 CASE 711AT GA = Specific Device Code M = Date Code (for details please refer to the Ordering Information section) Very Low Dropout: 130 mV Typical at 130 mA Low IQ of typ. 50 mA per Channel High PSRR: 75 dB at 1 kHz Two Independent Enable Pins Over Current Protection: 165 mA Typical Foldback Short Circuit Protection Thermal Shutdown Stable with a 0.22 mF Ceramic Output Capacitor Available in XDFN6 1.2 x 1.2 mm Package Active Output Discharge for Fast Output Turn−Off These are Pb−Free Devices PIN CONNECTIONS OUT1 1 OUT2 2 GND 3 GND • • • • • • • • • • • www.onsemi.com 6 EN1 5 IN 4 EN2 XDFN6 (Top view) Typical Applications ORDERING INFORMATION • Smartphones, Tablets, Wireless Handsets • Wireless LAN, Bluetooth®, ZigBee® Interfaces • Other Battery Powered Applications See detailed ordering and shipping information on page 13 of this data sheet. NCP153 VIN1 VOUT2 IN EN1 OUT2 EN2 OUT1 VOUT1 GND CIN1 0.22 mF COUT1 0.22 mF COUT2 0.22 mF Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2015 September, 2019 − Rev. 2 1 Publication Order Number: NCP153/D NCP153 ENABLE LOGIC EN1 THERMAL SHUTDOWN MOSFET DRIVER WITH CURRENT LIMIT OUT1 ACTIVE DISCHARGE EN1 GND EN2 ACTIVE DISCHARGE BANDGAP REFERENCE IN OUT2 MOSFET DRIVER WITH CURRENT LIMIT THERMAL SHUTDOWN ENABLE LOGIC EN2 Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. XDFN6 Pin Name 1 OUT1 Regulated output voltage of the first channel. A small 0.22 mF ceramic capacitor is needed from this pin to ground to assure stability. 2 OUT2 Regulated output voltage of the second channel. A small 0.22 mF ceramic capacitor is needed from this pin to ground to assure stability. 3 GND Power supply ground. Soldered to the copper plane allows for effective heat dissipation. 4 EN2 Driving EN2 over 0.9 V turns−on OUT2. Driving EN below 0.4 V turns−off the OUT2 and activates the active discharge. 5 IN 6 EN1 − EP Description Input pin common for both channels. It is recommended to connect 0.22 mF ceramic capacitor close to the device pin. Driving EN1 over 0.9 V turns−on OUT1. Driving EN below 0.4 V turns−off the OUT1 and activates the active discharge. Exposed pad must be tied to ground. Soldered to the copper plane allows for effective thermal dissipation. www.onsemi.com 2 NCP153 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN −0.3 V to 6 V V Output Voltage VOUT1, VOUT2 −0.3 V to VIN + 0.3 V or 6 V V Enable Inputs VEN1, VEN2 −0.3 V to 6 V V Input Voltage (Note 1) Output Short Circuit Duration tSC Indefinite s TJ(MAX) 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Maximum Junction Temperature Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS (Note 3) Rating Thermal Characteristics, XDFN6 1.2 x 1.2 mm, Thermal Resistance, Junction−to−Air Thermal Characterization Parameter, Junction−to−Lead (Pin 2) 3. Single component mounted on 1 oz, FR4 PCB with 645mm2 Cu area. www.onsemi.com 3 Symbol Value qJA qJL 170 Unit °C/W NCP153 ELECTRICAL CHARACTERISTIC −40°C ≤ TJ ≤ 85°C; VIN = VOUT(NOM) + 1 V or 2.5 V, whichever is greater; VEN = 0.9 V, IOUT = 1 mA, CIN = COUT = 0.22 mF. Typical values are at TJ = +25°C. Min/Max values are specified for TJ = −40°C and TJ = 85°C respectively. (Note 4) Test Conditions Parameter Operating Input Voltage Output Voltage Accuracy VOUT > 2 V −40°C ≤ TJ ≤ 85°C Symbol Min Max Unit VIN 1.9 5.25 V VOUT −2 +2 % −60 +60 mV VOUT ≤ 2 V Typ Line Regulation VOUT + 0.5 V or 2.5 V ≤ VIN ≤ 5 V RegLINE 0.02 0.1 %/V Load Regulation IOUT = 1 mA to 130 mA, TJ = +25°C RegLOAD 15 50 mV 265 280 130 150 Dropout Voltage (Note 5) VOUT(nom) = 1.8 V IOUT = 130 mA, TJ = +25°C VOUT(nom) = 3.3 V VDO mV Output Current TJ = +25°C IOUT 130 OCP Level VOUT = 90% VOUT(nom), TJ = +25°C IOCP 135 Short Circuit Current VOUT = 0 V, TJ = +25°C ISC 55 Quiescent Current IOUT = 0 mA, EN1 = VIN, EN2 = 0 V or EN2 = VIN, EN1 = 0 V IQ 50 100 mA IOUT1 = IOUT2 = 0 mA, VEN1 = VEN2 = VIN IQ 85 200 mA IDIS 0.1 1 mA Shutdown Current (Note 6) VEN ≤ 0.4 V, VIN = 5.25 V EN Pin Threshold Voltage High Threshold Low Threshold VEN Voltage increasing VEN Voltage decreasing EN Pin Input Current VEN = VIN = 5.25 V Power Supply Rejection Ratio VIN = VOUT+1 V for VOUT > 2 V, VIN = 2.5 V, for VOUT ≤ 2 V, IOUT = 10 mA Output Noise Voltage f = 10 Hz to 100 kHz Active Discharge Resistance VEN_HI VEN_LO mA 165 195 mA mA V 0.9 0.4 IEN 0.3 PSRR 75 dB VN 75 mVrms VIN = 4 V, VEN < 0.4 V RDIS 50 W Thermal Shutdown Temperature Temperature increasing from TJ = +25°C TSD 160 °C Thermal Shutdown Hysteresis Temperature falling from TSD TSDH f = 1 kHz − 20 1.0 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V. 6. Shutdown Current is the current flowing into the IN pin when the device is in the disable state. www.onsemi.com 4 NCP153 1.85 3.35 1.84 3.34 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS 1.83 1.82 1.81 IOUT = 1 mA 1.80 IOUT = 130 mA 1.79 1.78 VIN = 2.8 V VOUT = 1.8 V CIN = 0.22 mF COUT = 0.22 mF 1.77 1.76 1.75 −40 −25 −10 5 35 20 50 65 95 80 3.28 VIN = 4.3 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF 3.27 3.26 3.25 −40 −25 −10 5 20 750 350 300 50 35 65 80 Figure 4. Output Voltage vs. Temperature – VOUT = 3.3 V TJ = 85°C IGND, GROUND CURRENT (mA) IGND, GROUND CURRENT (mA) IOUT = 130 mA 3.29 Figure 3. Output Voltage vs. Temperature – VOUT = 1.8 V TJ = 25°C 250 200 TJ = −40°C 150 100 50 0.001 0.01 0.1 1 10 100 1000 VEN1 = VEN2 = VIN, OUT1−LOAD OUT2−LOAD VIN = 4.3 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF 675 600 525 95 450 VEN1 = VEN2 = VIN, OUT1−LOAD 375 300 225 VEN1 = 0 V, VEN2 = VIN, OUT1−LOAD 150 75 0 0 13 26 52 39 65 78 91 104 117 130 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 5. Ground Current vs. Output Current – One Output Load Figure 6. Ground Current vs. Output Current – Different Load Combinations 0.05 90 85°C 80 70 −40°C 25°C 60 50 REGLINE, LINE REGULATION (%/V) 100 IQ, QUIESCENT CURRENT (mA) 3.30 TJ, JUNCTION TEMPERATURE (°C) VIN = 4.3 V VOUT = 3.3 V VEN1 = VEN2 = VIN CIN = 0.22 mF COUT = 0.22 mF 400 0.04 0.03 0.02 0.01 0 −0.01 40 VIN = 4.3 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF 30 20 10 0 IOUT = 1 mA 3.31 TJ, JUNCTION TEMPERATURE (°C) 450 0 3.33 3.32 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VIN = 2.5 V to 5.25 V VOUT = 1.8 V IOUT = 1 mA CIN = 0.22 mF COUT = 0.22 mF −0.02 −0.03 −0.04 −0.05 −40 −25 5.0 5.5 −10 5 20 35 50 65 80 VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Quiescent Current vs. Input Voltage – Both Outputs ON Figure 8. Line Regulation vs. Temperature − VOUT = 1.8 V www.onsemi.com 5 95 NCP153 TYPICAL CHARACTERISTICS 0.03 0.02 0.01 0 −0.01 VIN = 4.3 V to 5.25 V VOUT = 3.3 V IOUT = 1 mA CIN = 0.22 mF COUT = 0.22 mF −0.02 −0.03 −0.04 −0.05 −40 −25 REGLOAD, LOAD REGULATION (mV) REGLOAD, LOAD REGULATION (mV) 0.04 −10 20 5 35 50 65 80 95 8 7 6 5 4 3 2 1 0 −40 −25 −10 5 35 20 50 65 80 95 Figure 9. Line Regulation vs. Temperature − VOUT = 3.3 V Figure 10. Load Regulation vs. Temperature − VOUT = 1.8 V 300 9 8 7 6 5 4 VIN = 4.3 V VOUT = 3.3 V IOUT = 1 mA to 130 mA CIN = 0.22 mF COUT = 0.22 mF 3 2 1 0 −40 −25 −10 5 35 20 50 65 80 95 VIN = 2.8 V VOUT = 1.8 V CIN = 0.22 mF COUT = 0.22 mF 270 240 210 TJ = 85°C TJ = 25°C 180 150 TJ = −40°C 120 90 60 30 0 0 13 26 39 52 78 65 91 104 117 130 TJ, JUNCTION TEMPERATURE (°C) IOUT, OUTPUT CURRENT (mA) Figure 11. Load Regulation vs. Temperature − VOUT = 3.3 V Figure 12. Dropout Voltage vs. Output Current – VOUT = 1.8 V 350 VIN = 4.3 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF 180 160 140 VDROP, DROPOUT VOLTAGE (mV) 200 VDROP, DROPOUT VOLTAGE (mV) VIN = 2.5 V VOUT = 3.3 V IOUT = 1 mA to 130 mA CIN = 0.22 mF COUT = 0.22 mF 9 TJ, JUNCTION TEMPERATURE (°C) 10 TJ = 85°C TJ = 25°C 120 100 80 TJ = −40°C 60 40 20 0 10 TJ, JUNCTION TEMPERATURE (°C) VDROP, DROPOUT VOLTAGE (mV) REGLINE, LINE REGULATION (%/V) 0.05 0 13 26 39 52 65 78 91 104 117 130 315 280 245 VIN = 2.8 V VOUT = 1.8 V CIN = 0.22 mF COUT = 0.22 mF IOUT = 130 mA 210 IOUT = 75 mA 175 140 105 70 35 0 −40 −25 IOUT = 0 mA −10 5 20 35 50 65 80 95 IOUT, OUTPUT CURRENT (mA) TJ, JUNCTION TEMPERATURE (°C) Figure 13. Dropout Voltage vs. Output Current – VOUT = 3.3 V Figure 14. Dropout Voltage vs. Temperature – VOUT = 1.8 V www.onsemi.com 6 NCP153 TYPICAL CHARACTERISTICS 300 VIN = 4.3 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF 140 ICL, CURRENT LIMIT (mA) 160 270 IOUT = 130 mA 120 100 IOUT = 75 mA 80 60 IOUT = 0 mA 40 20 0 −40 −25 5 −10 20 35 50 65 80 95 210 180 150 120 60 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) Figure 15. Dropout Voltage vs. Temperature – VOUT = 3.3 V Figure 16. Current Limit vs. Temperature 100 4.0 90 3.6 80 70 60 50 40 30 VIN = 4.3 V VOUT = 0 V CIN = 0.22 mF COUT = 0.22 mF 20 10 0 −40 −25 −10 5 20 35 50 65 80 95 3.2 TJ = −40°C 2.8 2.4 TJ = 25°C 2.0 TJ = 85°C 1.6 1.2 VIN = 4.3 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF 0.8 0.4 0 95 0 20 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (°C) IOUT, OUTPUT CURRENT (mA) Figure 17. Short Circuit Current vs. Temperature Figure 18. Current Foldback Protection − 3.3 V 200 IDIS, DISABLE CURRENT (nA) 1.8 TJ = −40°C 1.6 1.4 TJ = 25°C 1.2 TJ = 85°C 1.0 0.8 0.6 VIN = 2.8 V VOUT = 1.8 V CIN = 0.22 mF COUT = 0.22 mF 0.4 0.2 0 VIN = 4.3 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF 90 TJ, JUNCTION TEMPERATURE (°C) 2.0 VOUT, OUTPUT VOLTAGE (V) 240 30 0 −40 −25 VOUT, OUTPUT VOLTAGE (V) ISC, SHORT CIRCUIT CURRENT (mA) VDROP, DROPOUT VOLTAGE (mV) 200 180 0 20 40 60 80 100 120 140 160 180 200 180 160 140 120 100 80 60 40 VIN = 5.5 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF 20 0 −40 −25 −10 5 20 35 50 65 80 IOUT, OUTPUT CURRENT (mA) TJ, JUNCTION TEMPERATURE (°C) Figure 19. Current Foldback Protection − 1.8 V Figure 20. Disable Current vs. Temperature www.onsemi.com 7 95 NCP153 TYPICAL CHARACTERISTICS 100 1.0 Unstable Operation 0.8 OFF −> ON 0.7 0.6 ESR (W) ON −> OFF 0.5 0.4 0.2 −10 5 Stable Operation 20 35 50 65 80 0.01 95 13 39 26 52 65 78 91 104 117 130 IOUT, OUTPUT CURRENT (mA) Figure 21. Enable Voltage Threshold vs. Temperature Figure 22. Stability vs. ESR 400 350 300 250 200 VIN = 4.3 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF 150 100 −25 −10 5 20 35 50 65 80 95 50 45 40 35 30 25 20 VIN = 4.3 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF 15 10 5 0 −40 −25 −10 5 20 50 35 65 80 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 23. Current To Enable Pin vs. Temperature Figure 24. Discharge Resistance vs. Temperature 95 100 100 90 RR, RIPPLE REJECTION (dB) RR, RIPPLE REJECTION (dB) 0 TJ, JUNCTION TEMPERATURE (°C) 450 80 1 mA 70 10 mA 60 50 40 VIN = 2.8 V VOUT = 1.8 V CIN = none COUT = 0.22 mF 30 20 10 0 VOUT = 1.8 V 0.1 500 50 0 −40 VOUT = 3.3 V 1 VIN = 4.3 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF 0.3 0.1 0 −40 −25 IEN, CURRENT TO ENABLE PIN (nA) 10 RDIS, DISCHARGE RESISTANCE (W) VEN, ENABLE VOLTAGE (V) 0.9 100 1K 100 mA 10K 100K 1M 10M 90 80 1 mA 70 10 mA 60 50 40 VIN = 4.3 V VOUT = 3.3 V CIN = none COUT = 0.22 mF 30 20 10 0 100 1K 100 mA 10K 100K 1M FREQUENCY (Hz) FREQUENCY (Hz) Figure 25. Power Supply Rejection Ratio, VOUT = 1.8 V, COUT = 0.22 mF Figure 26. Power Supply Rejection Ratio, VOUT = 3.3 V, COUT=0.22 mF www.onsemi.com 8 10M NCP153 TYPICAL CHARACTERISTICS OUTPUT VOLTAGE NOISE (nV/√Hz) 10K 1K 10 mA RMS Output Noise (mV) 100 mA 100 VIN = 2.8 V VOUT = 1.8 V CIN = 0.22 mF COUT = 0.22 mF MLCC, X7R, 1206 size 10 1 10 100 1 mA 1K 10K 100K IOUT 10 Hz − 100 kHz 100 Hz − 100 kHz 1 mA 68.07 67.07 10 mA 67.30 66.31 100 mA 68.31 67.35 IOUT 10 Hz − 100 kHz 100 Hz − 100 kHz 1M FREQUENCY (Hz) Figure 27. Output Voltage Noise Spectral Density for VOUT = 1.8 V, COUT = 220 nF OUTPUT VOLTAGE NOISE (nV/√Hz) 10K 10 mA 1K RMS Output Noise (mV) 100 mA 1 mA 108.34 106.75 10 mA 107.18 105.56 100 mA 109.12 107.54 100 VIN = 4.3 V VOUT = 3.3 V CIN = 0.22 mF COUT = 0.22 mF MLCC, X7R, 1206 size 10 1 10 100 1 mA 1K 10K 100K 1M FREQUENCY (Hz) Figure 28. Output Voltage Noise Spectral Density for VOUT = 3.3 V, COUT = 220 nF www.onsemi.com 9 NCP153 VOUT1 VOUT2 VOUT2 = 1.8 V IOUT1 = 10 mA VOUT1 IOUT2 = 1 mA COUT1 = COUT2 = 1 mF VOUT2 40 ms/div 40 ms/div Figure 29. Enable Turn−on Response – VR1 = 10 mA, VR2 = Off Figure 30. Enable Turn−on Response – VR1 = 10 mA, VR2 = 1 mA tRISE = 1 ms tFALL = 1 ms 20 mV/div VOUT2 COUT1 = 220 nF COUT2 = 220 nF VIN = 4.8 V to 3.8 V IOUT2 = 10 mA VOUT1 COUT1 = 220 nF COUT2 = 220 nF 2 ms/div 2 ms/div Figure 31. Line Transient Response – Rising Edge, VEN1 = VEN2 = VIN, VOUT1 = 3.3 V, IOUT1 = 10 mA Figure 32. Line Transient Response – Falling Edge, VEN1 = VEN2 = VIN, VOUT1 = 3.3 V, IOUT1 = 10 mA 50 mA/div IOUT1 tRISE = 1 ms VOUT1 VIN = 4.3 V VOUT1 = 3.3 V VOUT2 VOUT2 = 1.8 V IOUT2 = 0 mA 20 mV/div 50 mV/div 20 mV/div 50 mV/div 50 mA/div IOUT1 COUT1 = 220 nF COUT2 = 220 nF tFALL = 1 ms VOUT1 VIN = 4.3 V VOUT1 = 3.3 V VOUT2 VOUT2 = 1.8 V IOUT2 = 0 mA COUT1 = 220 nF COUT2 = 220 nF 4 ms/div 4 ms/div Figure 33. Load Transient Response – Rising Edge, IOUT = 1 mA to 130 mA – 3.3 V Figure 34. Load Transient Response– Falling Edge, IOUT = 130 mA to 1 mA – 3.3 V www.onsemi.com 10 20 mV/div VIN = 3.8 V to 4.8 V IOUT2 = 10 mA VOUT1 VIN 500 mV/div VIN VOUT2 20 mV/div 1 V/div 1 V/div VIN = 3.8 V VOUT1 = 3.3 V VOUT2 = disable IOUT1 = 10 mA COUT1 = COUT2 = 1 mF IIN 20 mV/div 500 mV/div 1 V/div 1 V/div IIN VIN = 4.3 V VOUT1 = 3.3 V VEN 50 mA/div 500 mV/div VEN 50 mA/div 500 mV/div TYPICAL CHARACTERISTICS NCP153 20 mV/div 50 mA/div tRISE = 1 ms VOUT1 VIN = 4.3 V VOUT1 = 3.3 V VOUT2 VOUT2 = 1.8 V IOUT1 = 0 mA 50 mV/div IOUT2 COUT1 = 220 nF COUT2 = 220 nF tFALL = 1 ms VIN = 4.3 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT1 = 0 mA VOUT1 COUT1 = 220 nF COUT2 = 220 nF VOUT2 4 ms/div Figure 36. Load Transient Response – Falling Edge, IOUT = 130 mA to 1 mA – 1.8 V IOUT2 tRISE = 1 ms VOUT1 20 mV/div 50 mA/div 4 ms/div VIN = 4.3 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT1 = 0 mA 50 mV/div VOUT2 COUT1 = 220 nF COUT2 = 220 nF IOUT2 tFALL = 1 ms VIN = 4.3 V VOUT1 = 3.3 V VOUT2 = 1.8 V IOUT1 = 0 mA COUT1 = 220 nF COUT2 = 220 nF VOUT1 VOUT2 4 ms/div 4 ms/div Figure 37. Load Transient Response – Rising Edge, IOUT = 0.1 mA to 130 mA Figure 38. Load Transient Response – Falling Edge, IOUT = 130 mA to 0.1 mA VIN VIN = 4.3 V VOUT1 = 3.3 V VOUT2 = 1.8 V VOUT1 VOUT2 VEN VOUT1 IOUT1 = 10 mA IOUT2 = 10 mA CIN = COUT1 = COUT1 = 220 nF 1 V/div 500 mV/div IOUT2 Figure 35. Load Transient Response – Rising Edge, IOUT = 1 mA to 130 mA – 1.8 V 500 mV/div 50 mV/div 20 mV/div 50 mA/div 50 mV/div 20 mV/div 50 mA/div TYPICAL CHARACTERISTICS tFALL = 1 ms COUT = 4.7 mF COUT = 1 mF VIN = 4.3 V VOUT1 = 3.3 V VOUT2 = 1.8 V 20 ms/div 200 ms/div Figure 39. Turn−on/off − Slow Rising VIN Figure 40. Enable Turn−off www.onsemi.com 11 NCP153 APPLICATIONS INFORMATION General disable state the device consumes as low as typ. 10 nA from the VIN. If the EN pin voltage >0.9 V the device is guaranteed to be enabled. The NCP153 regulates the output voltage and the active discharge transistor is turned−off. The both EN pin has internal pull−down current source with typ. value of 300 nA which assures that the device is turned−off when the EN pin is not connected. In the case where the EN function isn’t required the EN should be tied directly to IN. The NCP153 is a dual output high performance 130 mA Low Dropout Linear Regulator. This device delivers very high PSRR (75 dB at 1 kHz) and excellent dynamic performance as load/line transients. In connection with low quiescent current this device is very suitable for various battery powered applications such as tablets, cellular phones, wireless and many others. Each output is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. The NCP153 device is housed in XDFN−6 1.2 mm x 1.2 mm package which is useful for space constrains application. Foldback Short Circuit Protection The internal foldback limits short circuit current to typical 55 mA and protects powered device against overheating. Maximum output current is internaly limited to 165 mA (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. Thess protections are independent for each channel. Short circuit on the one channel do not influence second channel which will work according to specification. Input Capacitor Selection (CIN) It is recommended to connect at least a 0.22 mF Ceramic X5R or X7R capacitor as close as possible to the IN pin of the device. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the min. or max. ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. Larger input capacitor may be necessary if fast and large load transients are encountered in the application. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (TSD − 160°C typical), Thermal Shutdown event is detected and the affected channel is turn−off. Second channel still working. The channel which is overheated will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU − 140°C typical). Once the device temperature falls below the 140°C the appropriate channel is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. The long duration of the short circuit condition to some output channel could cause turn−off other output when heat sinking is not enough and temperature of the other output reach TSD temperature. Output Decoupling (COUT) The NCP153 requires an output capacitor for each output connected as close as possible to the output pin of the regulator. The recommended capacitor value is 0.22 mF and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCP153 is designed to remain stable with minimum effective capacitance of 0.15 mF to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied DC bias. There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the COUT but the maximum value of ESR should be less than 2 W. Larger output capacitors and lower ESR could improve the load transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. Power Dissipation As power dissipated in the NCP153 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCP153 can handle is given by: Enable Operation The NCP153 uses the dedicated EN pin for each output channel. This feature allows driving outputs separately. If the EN pin voltage is VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. PCB Layout Recommendations To obtain good transient performance and good regulation characteristics place input and output capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 capacitors. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad should be tied the shortest path to the GND pin. Power Supply Rejection Ratio The NCP153 features very good Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range 100 kHz − 10 MHz can be tuned by the selection of COUT capacitor and proper PCB layout. Turn−On Time The turn−on time is defined as the time period from EN assertion to the point in which VOUT will reach 98% of its ORDERING INFORMATION Device NCP153MX330180TCG Voltage Option* (OUT1/OUT2) Marking Marking Rotation 3.3 V/1.8 V GA 0° Package Shipping† XDFN-6 (Pb-Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Contact factory for other voltage options. Output voltage range 1.0 V to 3.3 V with step 50 mV. ZigBee is a registered trademark of ZigBee Alliance. Bluetooth is a registered trademark of Bluetooth SIG. www.onsemi.com 13 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN6 1.20x1.20, 0.40P CASE 711AT ISSUE C SCALE 4:1 D PIN ONE REFERENCE DATE 04 DEC 2015 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO THE PLATED TERMINALS. 4. COPLANARITY APPLIES TO THE PAD AS WELL AS THE TERMINALS. A B ÍÍÍ ÍÍÍ ÍÍÍ E L TOP VIEW DETAIL A OPTIONAL CONSTRUCTION A 0.05 C DIM A A1 b D D2 E E2 e L L1 A1 GENERIC MARKING DIAGRAM* 0.05 C C SIDE VIEW NOTE 4 MILLIMETERS TYP MAX 0.37 0.45 0.03 0.05 0.18 0.23 1.20 1.25 0.94 1.04 1.20 1.25 0.40 0.30 0.40 BSC 0.15 0.20 0.25 0.05 0.00 0.10 MIN 0.30 0.00 0.13 1.15 0.84 1.15 0.20 SEATING PLANE XX M D2 1 3 6X L1 XX = Specific Device Code M = Date Code E2 6X *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. L 6 DETAIL A 4 6X e b 0.10 BOTTOM VIEW M C A B NOTE 3 RECOMMENDED MOUNTING FOOTPRINT* 1.08 PACKAGE OUTLINE 6X 0.37 1.40 0.40 1 0.40 PITCH 6X 0.24 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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