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NCP4682DSN30T1G

NCP4682DSN30T1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT23-5

  • 描述:

    IC REG LINEAR 3V 150MA SOT23-5

  • 数据手册
  • 价格&库存
NCP4682DSN30T1G 数据手册
NCP4682, NCP4685 150 mA, Ultra Low Supply Current, Low Dropout Regulator The NCP4682 and NCP4685 are CMOS Low Dropout Linear voltage regulators with 150 mA output current capability. The devices have high output voltage accuracy, a 1 mA (typ.) ultra low supply current and high ripple rejection. Current fold−back protection is integrated in the devices to protect against over current and short current conditions. A Chip Enable (NCP4682 only) function is included to save power by further lowering supply current, which is advantageous for battery powered applications. The NCP4685 is optimized for the lowest quiescent current possible in applications where the device is always on. http://onsemi.com MARKING DIAGRAMS XXX MG G SOT−23−5 CASE 1212 Features • • • • • • • • • • • • Operating Input Voltage Range: 1.70 V to 5.25 V Output Voltage Range: 1.2 V to 3.3 V (available in 0.1 V steps) Output Voltage Accuracy: ±0.8% Excellent Output Voltage Temperature Coefficient : ±40 ppm/°C Supply Current: 1.0 mA (excluding CE pull down current) Standby Current: 0.1 mA Dropout Voltage: 0.24 V (IOUT = 150 mA, VOUT = 2.8 V) Line Regulation: 0.02%/V Typ. Stable with Ceramic Capacitors: 0.1 mF or more Current Fold Back Protection Available in UDFN4 1.0 x 1.0 mm, SC−82AB, SOT23 Packages These are Pb−Free Devices SC−82AB CASE 419C UDFN4 CASE 517BR 1 (*Note: Microdot may be in either location) NCP4682x VIN CE C1 100n XX MM XXX, XX = Specific Device Code M, MM = Date Code G = Pb−Free Package Battery−Powered Equipment Networking and Communication Equipment Cameras, DVRs, STB and Camcorders Home Appliances VIN 1 1 Typical Applications • • • • XXX M G ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 19 of this data sheet. VOUT VIN VOUT GND NCP4685x VIN C1 100n C2 100n VOUT GND VOUT C2 100n Figure 1. Typical Application Schematics © Semiconductor Components Industries, LLC, 2012 October, 2012 − Rev. 3 1 Publication Order Number: NCP4682/D NCP4682, NCP4685 VOUT VIN VIN VOUT Vref Vref Current Limit CE CE Current Limit GND GND NCP4682Dxxxx NCP4682Hxxxx VIN VOUT Vref Current Limit NC GND NCP4685Exxxx Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. UDFN1010* Pin No. SC−82AB Pin No. SOT23 Pin Name 1 3 5 VOUT Output pin 2 2 2 GND Ground 3 1 3 CE/NC 4 4 1 VIN Input pin − − 4 NC No connection Description Chip enable pin (Active “H”) / No connection *Tab is GND level. (They are connected to the reverse side of this IC.) The tab is better to be connected to the GND, but leaving it open is also acceptable. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN 6.0 V Output Voltage VOUT −0.3 to VIN + 0.3 V Chip Enable Input VCE 6.0 V Output Current IOUT 200 mA Input Voltage (Note 1) http://onsemi.com 2 NCP4682, NCP4685 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Power Dissipation UDFN1010 Unit 400 Power Dissipation SC−82AB 380 PD Power Dissipation SOT23 mW 420 Junction Temperature TJ −40 to 150 °C Storage Temperature TSTG −55 to 125 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Characteristics, UDFN 1.0 x 1.0 mm Thermal Resistance, Junction−to−Air RqJA 250 °C/W Thermal Characteristics, SOT23 Thermal Resistance, Junction−to−Air RqJA 238 °C/W Thermal Characteristics, SC−82AB Thermal Resistance, Junction−to−Air RqJA 263 °C/W ELECTRICAL CHARACTERISTICS −40°C ≤ TA ≤ 85°C; VIN = VOUT(NOM) + 1 V or 2.5 V, whichever is greater; IOUT = 1 mA, CIN = COUT = 0.1 mF, unless otherwise noted. Typical values are at TA = +25°C. Parameter Test Conditions Symbol Min (Note 3) VIN VOUT Operating Input Voltage Output Voltage TA = +25 °C Max Unit 1.70 5.25 V x0.992 x1.008 V VOUT < 2.0 V −16 16 mV VOUT ≥ 2.0 V x0.985 x1.015 V VOUT ≥ 2.0 V −40°C ≤ TA ≤ 85°C VOUT < 2.0 V Output Voltage Temp. Coefficient −40°C ≤ TA ≤ 85°C Typ −30 30 DVOUT / DTA ±40 mV ppm/°C Line Regulation VOUT(NOM) + 0.5 V ≤ VIN ≤ 5.0 V LineReg 0.02 0.10 %/V Load Regulation IOUT = 1 mA to 150 mA LoadReg 10 20 mV VDO 0.76 1.05 V 1.5 V ≤ VOUT < 1.7 V 0.53 0.80 1.7 V ≤ VOUT < 2.0 V 0.44 0.65 2.0 V ≤ VOUT < 2.5 V 0.34 0.50 2.5 V ≤ VOUT < 2.8 V 0.28 0.40 0.24 0.32 Dropout Voltage IOUT = 150 mA 1.2 V ≤ VOUT < 1.5 V 2.8 V ≤ VOUT < 3.3 V Output Current Short Current Limit IOUT VOUT = 0 V Quiescent Current http://onsemi.com 3 150 mA ISC 40 IQ 1.0 mA 1.5 mA NCP4682, NCP4685 ELECTRICAL CHARACTERISTICS −40°C ≤ TA ≤ 85°C; VIN = VOUT(NOM) + 1 V or 2.5 V, whichever is greater; IOUT = 1 mA, CIN = COUT = 0.1 mF, unless otherwise noted. Typical values are at TA = +25°C. Parameter Test Conditions Symbol VCE = 0 V, TA = 25°C, NCP4682 only ISTB CE Input Voltage “H” VCEH CE Input Voltage “L” VCEL NCP4682 only ICEPD 0.3 mA Power Supply Rejection Ratio VIN = 2.2 V, VOUT = 1.2 V, DVIN = 0.2 Vpk−pk, IOUT = 30 mA, f = 1 kHz PSRR 30 dB Output Noise Voltage f = 10 Hz to 100 kHz, IOUT = 30 mA, VOUT = 1.2 V, VIN = 2.2 V VN 70 mVrms VIN = 4 V, VCE = 0 V, NCP4682D only RLOW 30 W Standby Current CE Pin Threshold Voltage (NCP4682 only) CE Pull Down Current Low Output Nch Tr. On Resistance Min Typ Max Unit 0.1 1.0 mA V 1.5 0.3 3. The maximum Input Voltage of the Electrical Characteristics is 5.25 V. In case of exceeding this specification, the IC must be operated n condition that the Input Voltage is up to 5.50 V and total operation time is within 500 hours. http://onsemi.com 4 NCP4682, NCP4685 TYPICAL CHARACTERISTICS 1.4 3.0 VIN = 2.6 V 1.2 2.3 V 2.0 V 0.8 1.7 V 0.6 0 100 200 300 400 500 100 200 300 400 500 Figure 3. Output Voltage vs. Output Current 1.2 V Version (TJ = 255C) Figure 4. Output Voltage vs. Output Current 2.5 V Version (TJ = 255C) 3.5 VIN = 4.5 V 3.0 3.4 V 3.7 V 2.0 4.2 V 2.5 4.1 V VOUT (V) VOUT (V) 0 IOUT (mA) 2.5 VIN = 3.1 V 1.5 1.0 3.6 V 3.9 V 2.0 1.5 1.0 0.5 0.5 0 100 200 300 400 500 0.0 0 100 200 300 400 500 IOUT (mA) IOUT (mA) Figure 5. Output Voltage vs. Output Current 2.8 V Version (TJ = 255C) Figure 6. Output Voltage vs. Output Current 3.3 V Version (TJ = 255C) 0.30 0.90 0.80 0.25 0.70 TJ = 85°C 0.60 25°C 0.20 −40°C 0.50 VDO (V) VDO (V) 0.0 IOUT (mA) 3.0 0.40 0.30 25°C TJ = 85°C 0.15 −40°C 0.10 0.20 0.05 0.10 0.00 3.1 V 1.5 0.5 0.2 0.0 3.7 V 1.0 0.4 0.0 VIN = 2.8 V 2.0 VOUT (V) VOUT (V) 1.0 3.4 V 2.5 0 25 50 75 IOUT (mA) 100 125 150 0.00 0 Figure 7. Dropout Voltage vs. Output Current 1.2 V Version 25 50 75 IOUT (mA) 100 125 Figure 8. Dropout Voltage vs. Output Current 2.5 V Version http://onsemi.com 5 150 NCP4682, NCP4685 0.30 0.30 0.25 0.25 0.20 0.20 TJ = 85°C 0.15 0.10 VDO (V) VDO (V) TYPICAL CHARACTERISTICS 25°C TJ = 85°C 0.10 −40°C 0.05 0.00 25°C 0.15 −40°C 0.05 0 25 50 75 100 125 150 0.00 IOUT (mA) 0 25 50 75 100 Figure 9. Dropout Voltage vs. Output Current 2.8 V Version 2.53 VIN = 3.5 V 1.22 2.52 1.21 2.51 VOUT (V) VOUT (V) VIN = 2.2 V 1.20 2.50 1.19 2.49 1.18 2.48 −20 0 20 40 60 2.47 −40 80 −20 0 20 40 80 TJ, JUNCTION TEMPERATURE (°C) Figure 11. Output Voltage vs. Temperature, 1.2 V Version Figure 12. Output Voltage vs. Temperature, 2.5 V Version 3.33 VIN = 3.8 V VIN = 4.3 V 2.82 3.32 2.81 3.31 VOUT (V) VOUT (V) 60 TJ, JUNCTION TEMPERATURE (°C) 2.83 2.80 3.30 2.79 3.29 2.78 3.28 2.77 −40 150 Figure 10. Dropout Voltage vs. Output Current 3.3 V Version 1.23 1.17 −40 125 IOUT (mA) −20 0 20 40 60 3.27 −40 80 −20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 13. Output Voltage vs. Temperature, 2.8 V Version Figure 14. Output Voltage vs. Temperature, 3.3 V Version http://onsemi.com 6 NCP4682, NCP4685 2.0 2.0 1.8 1.8 1.6 1.6 1.4 1.4 1.2 1.2 IGND (mA) IGND (mA) TYPICAL CHARACTERISTICS 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 1 2 3 4 5 0 3 4 VIN, INPUT VOLTAGE (V) 1.8 1.8 1.6 1.6 1.4 1.4 1.2 1.2 1.0 0.8 1.0 0.8 0.6 0.6 0.4 0.4 0.2 0.2 1 2 3 4 0.0 5 0 1 2 3 4 VIN, INPUT VOLTAGE (V) VIN, INPUT VOLTAGE (V) Figure 18. Supply Current vs. Input Voltage, 3.3 V Version 3.0 VIN = 2.2 V VIN = 3.5 V 2.5 2.5 2.0 2.0 IGND (mA) IGND (mA) 5 Figure 17. Supply Current vs. Input Voltage, 2.8 V Version 3.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 −40 5 Figure 16. Supply Current vs. Input Voltage, 2.5 V Version 2.0 0 2 VIN, INPUT VOLTAGE (V) 2.0 0.0 1 Figure 15. Supply Current vs. Input Voltage, 1.2 V Version IGND (mA) IGND (mA) 1.0 −20 0 20 40 60 0.0 −40 80 −20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 19. Supply Current vs. Temperature, 1.2 V Version Figure 20. Supply Current vs. Temperature, 2.5 V Version http://onsemi.com 7 NCP4682, NCP4685 TYPICAL CHARACTERISTICS 3.0 3.0 VIN = 4.3 V 2.5 2.5 2.0 2.0 IGND (mA) IGND (mA) VIN = 3.8 V 1.5 1.0 1.0 0.5 0.5 0.0 −40 −20 0 20 40 60 0.0 −40 80 20 40 60 80 Figure 21. Supply Current vs. Temperature, 2.8 V Version Figure 22. Supply Current vs. Temperature, 3.3 V Version 3.0 2.5 1 mA 1.0 30 mA 2.0 VOUT (V) 50 mA 0.8 0.6 IOUT = 100 mA 0.4 1.5 1.0 0.2 0.5 0.0 0.0 30 mA 1 mA 50 mA IOUT = 100 mA 0 1 2 3 4 5 0 1 2 3 4 VIN, INPUT VOLTAGE (V) VIN, INPUT VOLTAGE (V) Figure 23. Output Voltage vs. Input Voltage, 1.2 V Version Figure 24. Output Voltage vs. Input Voltage, 2.5 V Version 3.0 3.5 2.5 3.0 5 2.5 2.0 1 mA VOUT (V) VOUT (V) 0 TJ, JUNCTION TEMPERATURE (°C) 1.2 1.5 30 mA 1.0 50 mA 0.5 0.0 −20 TJ, JUNCTION TEMPERATURE (°C) 1.4 VOUT (V) 1.5 1 2 3 VIN, INPUT VOLTAGE (V) 1.5 1 mA 1.0 4 0.0 5 30 mA 50 mA 0.5 IOUT = 100 mA 0 2.0 IOUT = 100 mA 0 Figure 25. Output Voltage vs. Input Voltage, 2.8 V Version 1 2 3 VIN, INPUT VOLTAGE (V) 4 Figure 26. Output Voltage vs. Input Voltage, 3.3 V Version http://onsemi.com 8 5 NCP4682, NCP4685 TYPICAL CHARACTERISTICS 60 60 50 50 30 20 30 mA 10 IOUT = 1 mA 30 20 30 mA 10 150 mA 0 0.1 PSRR (dB) PSRR (dB) 40 IOUT = 1 mA 1 10 100 150 mA 0 1000 FREQUENCY (kHz) 0.1 10 FREQUENCY (kHz) Figure 27. PSRR, 1.2 V Version, VIN = 2.2 V Figure 28. PSRR, 2.5 V Version, VIN = 3.5 V 60 60 50 50 40 40 30 PSRR (dB) PSRR (dB) 40 IOUT = 1 mA 20 30 mA 10 1 30 100 1000 IOUT = 1 mA 20 30 mA 10 150 mA 0 0.1 1 10 100 150 mA 0 1000 FREQUENCY (kHz) 0.1 1 10 FREQUENCY (kHz) 100 Figure 29. PSRR, 2.8 V Version, VIN = 3.8 V Figure 30. PSRR, 3.3 V Version, VIN = 4.3 V 1000 2.5 3.0 2.5 2.0 VN (mVrms/√Hz) VN (mVrms/√Hz) 2.0 1.5 1.0 1.5 1.0 0.5 0.5 0 0.01 0.1 1 10 100 0 0.01 1000 0.1 1 10 100 1000 FREQUENCY (kHz) FREQUENCY (kHz) Figure 31. Output Voltage Noise, 1.2 V Version, VIN = 2.2 V, IOUT =30 mA Figure 32. Output Voltage Noise, 2.5 V Version, VIN = 3.5 V, IOUT =30 mA http://onsemi.com 9 NCP4682, NCP4685 TYPICAL CHARACTERISTICS 18 7.0 16 6.0 14 VN (mVrms/√Hz) 4.0 3.0 2.0 12 10 8 6 4 1.0 2 0 0.01 0.1 1 10 FREQUENCY (kHz) 100 1000 0 0.01 Figure 33. Output Voltage Noise, 2.8 V Version, VIN = 3.8 V, IOUT =30 mA 0.1 1 10 FREQUENCY (kHz) 3.2 2.7 2.0 VIN (V) VOUT (V) 2.2 1.8 1.6 1.4 1.2 1.0 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t (ms) Figure 35. Line Transients, 1.2 V Version, tR = tF = 5 ms, IOUT = 30 mA 5.0 4.5 4.0 3.5 VIN (V) 3.3 3.1 2.9 2.7 2.5 2.3 2.1 0 0.1 0.2 0.3 0.4 100 1000 Figure 34. Output Voltage Noise, 3.3 V Version, VIN = 4.3 V, IOUT =30 mA 3.7 VOUT (V) VN (mVrms/√Hz) 5.0 0.5 0.6 0.7 t (ms) 0.8 0.9 Figure 36. Line Transients, 2.5 V Version, tR = tF = 5 ms, IOUT = 30 mA http://onsemi.com 10 1.0 NCP4682, NCP4685 TYPICAL CHARACTERISTICS 5.3 4.8 4.3 3.6 VIN (V) VOUT (V) 3.8 3.4 3.2 3.0 2.8 2.6 2.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t (ms) Figure 37. Line Transients, 2.8 V Version, tR = tF = 5 ms, IOUT = 30 mA 5.8 5.3 4.8 VIN (V) VOUT (V) 4.3 3.9 3.7 3.5 3.3 3.1 2.9 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t (ms) Figure 38. Line Transients, 3.3 V Version, tR = tF = 5 ms, IOUT = 30 mA 45 30 15 IOUT (mA) VOUT (V) 0 1.6 1.4 1.2 1.0 0.8 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 t (ms) Figure 39. Load Transients, 1.2 V Version, IOUT = 1 – 30 mA, tR = tF = 0.5 ms, VIN = 2.2 V http://onsemi.com 11 1.0 NCP4682, NCP4685 TYPICAL CHARACTERISTICS 45 30 15 IOUT (mA) VOUT (V) 0 2.9 2.7 2.5 2.3 2.1 1.9 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t (ms) Figure 40. Load Transients, 2.5 V Version, IOUT = 1 – 30 mA, tR = tF = 0.5 ms, VIN = 3.5 V 45 30 15 IOUT (mA) VOUT (V) 0 3.2 3.0 2.8 2.6 2.4 2.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t (ms) Figure 41. Load Transients, 2.8 V Version, IOUT = 1 – 30 mA, tR = tF = 0.5 ms, VIN = 3.8 V 45 30 15 IOUT (mA) VOUT (V) 0 3.7 3.5 3.3 3.1 2.9 2.7 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 t (ms) Figure 42. Load Transients, 3.3 V Version, IOUT = 1 – 30 mA, tR = tF = 0.5 ms, VIN = 4.3 V http://onsemi.com 12 1.0 NCP4682, NCP4685 TYPICAL CHARACTERISTICS 150 100 50 IOUT (mA) VOUT (V) 0 1.6 1.4 1.2 1.0 0.8 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 43. Load Transients, 1.2 V Version, IOUT = 50 – 100 mA, tR = tF = 0.5 ms, VIN = 2.2 V 150 100 50 IOUT (mA) VOUT (V) 0 2.9 2.7 2.5 2.3 2.1 1.9 0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 44. Load Transients, 2.5 V Version, IOUT = 50 – 100 mA, tR = tF = 0.5 ms, VIN = 3.5 V 150 100 50 IOUT (mA) VOUT (V) 0 3.2 3.0 2.8 2.6 2.4 2.2 0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 45. Load Transients, 2.8 V Version, IOUT = 50 – 100 mA, tR = tF = 0.5 ms, VIN = 3.8 V http://onsemi.com 13 NCP4682, NCP4685 TYPICAL CHARACTERISTICS 150 100 50 IOUT (mA) VOUT (V) 0 3.7 3.5 3.3 3.1 2.9 2.7 0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 46. Load Transients, 3.3 V Version, IOUT = 50 – 100 mA, tR = tF = 0.5 ms, VIN = 4.3 V 150 100 50 IOUT (mA) VOUT (V) 0 2.2 1.7 1.2 0.7 0.2 −0.3 0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 47. Load transients, 1.2 V Version, IOUT = 1 – 100 mA, tR = tF = 0.5 ms, VIN = 2.2 V 150 100 50 IOUT (mA) VOUT (V) 0 3.5 3.0 2.5 2.0 1.5 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 Figure 48. Load Transients, 2.5 V Version, IOUT = 1 – 100 mA, tR = tF = 0.5 ms, VIN = 3.5 V http://onsemi.com 14 1.0 NCP4682, NCP4685 TYPICAL CHARACTERISTICS 150 100 50 IOUT (mA) VOUT (V) 0 3.8 3.3 2.8 2.3 1.8 1.3 0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 49. Load Transients, 2.8 V Version, IOUT = 1 – 100 mA, tR = tF = 0.5 ms, VIN = 3.8 V 150 100 50 IOUT (mA) VOUT (V) 0 4.3 3.8 3.3 2.8 2.3 1.8 0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 50. Load Transients, 3.3 V Version, IOUT = 1 – 100 mA, tR = tF = 0.5 ms, VIN = 4.3 V 3 2 Chip Enable 1 VCE (V) VOUT (V) 0 IOUT = 1 mA 1.5 1.0 IOUT = 30 mA 0.5 IOUT = 150 mA 0 −0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 Figure 51. Start−up, NCP4682 1.2 V Version, VIN = 2.2 V http://onsemi.com 15 1.0 NCP4682, NCP4685 TYPICAL CHARACTERISTICS 6 4 Chip Enable 2 0 2.5 IOUT = 1 mA 2.0 VCE (V) VOUT (V) 3.0 IOUT = 30 mA 1.5 1.0 IOUT = 150 mA 0.5 0 −0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t (ms) Figure 52. Start−up, NCP4682 2.8 V Version, VIN = 3.8 V 6 4 Chip Enable 2 VCE (V) VOUT (V) 0 4.0 3.0 IOUT = 1 mA IOUT = 30 mA 2.0 1.0 IOUT = 150 mA 0 −1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t (ms) Figure 53. Start−up, NCP4682 3.3 V Version, VIN = 4.3 V 3 2 1 0 VCE (V) VOUT (V) Chip Enable 2.0 1.5 1.0 IOUT = 1 mA 0.5 IOUT = 30 mA 0 IOUT = 150 mA −0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t (ms) Figure 54. Shutdown, NCP4682 1.2 V Version D, VIN = 2.2 V http://onsemi.com 16 NCP4682, NCP4685 6 4 2 0 Chip Enable 2.5 VCE (V) VOUT (V) 3.0 2.0 1.5 IOUT = 1 mA 1.0 IOUT = 30 mA 0.5 0 −0.5 0 IOUT = 150 mA 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 55. Shutdown, NCP4682 2.8 V Version D, VIN = 3.8 V 6 4 2 0 Chip Enable 5.0 VCE (V) VOUT (V) 6.0 4.0 3.0 IOUT = 1 mA 2.0 IOUT = 30 mA 1.0 0 −1.0 0 IOUT = 150 mA 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 56. Shutdown, NCP4682 3.3 V Version D, VIN = 4.3 V 6 4 2 0 Chip Enable 2.5 2.0 VCE (V) VOUT (V) 3.0 IOUT = 1 mA 1.5 1.0 IOUT = 30 mA 0.5 0 −0.5 0 IOUT = 150 mA 0.1 0.2 0.3 0.4 0.5 0.6 t (ms) 0.7 0.8 0.9 1.0 Figure 57. Shutdown, NCP4682 2.8 V Version H, VIN = 3.8 V http://onsemi.com 17 NCP4682, NCP4685 APPLICATION INFORMATION A typical application circuits for NCP4682 and NCP4685 series is shown in Figure 58. NCP4682x VIN C1 100n VIN VIN CE VOUT VOUT C2 100n GND Enable Operation (NCP4682 Only) NCP4685x VIN C1 100n up to specified current capability in normal operation, but when an over current situation occurs, the output voltage and current decrease until the over current condition ends. Typical characteristics of this protection scheme are shown in the Output voltage versus Output current graphs in the characterization section of this datasheet. The enable pin CE may be used for turning the regulator on and off. The IC is switched on when a high level voltage is applied to the CE pin. The enable pin has an internal pull down current source. If the enable function is not needed, connect CE pin to VIN. VOUT VOUT GND Output Discharger (NCP4682 Only) C2 100n The NCP4682D version includes a transistor between VOUT and GND that is used for faster discharging of the output capacitor. This function is activated when the IC goes into disable mode. Thermals Figure 58. Typical Application Schematic As a power across the IC increase, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and also the ambient temperature affect the rate of temperature increase for the part. When the device has good thermal conductivity through the PCB the junction temperature will be relatively low in high power dissipation applications. Input Decoupling Capacitor (C1) A 0.1 mF ceramic input decoupling capacitor should be connected as close as possible to the input and ground pin of the NCP4682/5. Higher values and lower ESR improves line transient response. Output Decoupling Capacitor (C2) A 0.1 mF ceramic output decoupling capacitor is enough to achieve stable operation of the IC. If a tantalum capacitor is used, and its ESR is high, loop oscillation may result. The capacitors should be connected as close as possible to the output and ground pins. Larger values and lower ESR improves dynamic parameters. PCB layout Make the VIN and GND line as large as practical. If their impedance is high, noise pickup or unstable operation may result. Connect capacitors C1 and C2 as close as possible to the IC, and make wiring as short as possible. Current Limit This regulator includes a fold−back current limiting circuit. This type of protection doesn’t limit output current http://onsemi.com 18 NCP4682, NCP4685 ORDERING INFORMATION Nominal Output Voltage Description Marking NCP4682DMU12TCG 1.2 V Auto discharge CA NCP4682DMU15TCG 1.5 V Auto discharge CC NCP4682DMU18TCG 1.8 V Auto discharge CD NCP4682DMU19TCG 1.9 V Auto discharge CF NCP4682DMU25TCG 2.5 V Auto discharge CH NCP4682DMU28TCG 2.8 V Auto discharge CL NCP4682DMU30TCG 3.0 V Auto discharge CP NCP4682DMU33TCG 3.3 V Auto discharge CR NCP4682HMU18TCG 1.8 V Enable high AD NCP4682HMU28TCG 2.8 V Enable high AL NCP4682HMU33TCG 3.3 V Enable high AR NCP4685EMU30TCG 3.0 V Without enable BP NCP4682DSN30T1G 3.0 V Auto discharge 92P NCP4682DSN33T1G 3.3 V Auto discharge 92R NCP4682DSQ12T1G 1.2 V Auto discharge R0 NCP4682DSQ15T1G 1.5 V Auto discharge R2 NCP4682DSQ18T1G 1.8 V Auto discharge R3 NCP4682DSQ20T1G 2.0 V Auto discharge R6 NCP4682DSQ25T1G 2.5 V Auto discharge R7 NCP4682DSQ28T1G 2.8 V Auto discharge S0 NCP4682DSQ33T1G 3.3 V Auto discharge S5 NCP4685ESQ15T1G 1.5 V Without enable N2 NCP4685ESQ25T1G 2.5 V Without enable N7 NCP4685ESQ33T1G 3.3 V Without enable P5 Device Package Shipping UDFN4 (Pb−Free) 10000 / Tape & Reel SOT−23−5 (Pb−Free) 3000 / Tape & Reel SC−82AB (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *To order other package and voltage variants, please contact your ON Semiconductor sales representative. http://onsemi.com 19 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 5−LEAD CASE 1212−01 ISSUE A DATE 28 JAN 2011 SCALE 2:1 A 5 E 1 A2 0.05 S B D A1 4 2 L 3 L1 5X e E1 b 0.10 C M C B A S S C RECOMMENDED SOLDERING FOOTPRINT* 3.30 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: 98ASH70518A SOT−23 5−LEAD MILLIMETERS MIN MAX --1.45 0.00 0.10 1.00 1.30 0.30 0.50 0.10 0.25 2.70 3.10 2.50 3.10 1.50 1.80 0.95 BSC 0.20 --0.45 0.75 XXX MG G 0.85 0.56 DIM A A1 A2 b c D E E1 e L L1 GENERIC MARKING DIAGRAM* 5X 5X DOCUMENT NUMBER: NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSIONS: MILLIMETERS. 3. DATUM C IS THE SEATING PLANE. A *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−82AB CASE 419C−02 ISSUE F DATE 22 JUN 2012 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. 419C−01 OBSOLETE. NEW STANDARD IS 419C−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A G C D 3 PL N 3 4 K B S 1 2 H J F L 0.05 (0.002) 0.90 0.035 0.70 0.028 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.008 0.016 0.012 0.020 0.043 0.059 0.000 0.004 0.004 0.010 0.004 −−− 0.002 BSC 0.008 REF 0.07 0.09 XXX M G 0.65 0.026 0.95 0.037 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.20 0.40 0.30 0.50 1.10 1.50 0.00 0.10 0.10 0.26 0.10 −−− 0.05 BSC 0.20 REF 1.80 2.40 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 1.30 0.0512 DIM A B C D F G H J K L N S 1 XXX = Specific Device Code M = Month Code G = Pb−Free Package 1.90 0.075 SCALE 10:1 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ARB18939C SC−82AB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN4 1.0x1.0, 0.65P CASE 517BR−01 ISSUE O 1 SCALE 4:1 PIN ONE REFERENCE 2X 0.05 C 4X A B D ÉÉ ÉÉ typ DETAIL A 0.05 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L3 c 0.18 L2 E 3X TOP VIEW 0.43 4X (A3) 0.05 C A 3X 0.05 C NOTE 4 A1 SIDE VIEW e DETAIL A e/2 1 3X 2 DATE 27 OCT 2010 C SEATING PLANE DETAIL B 0.10 0.23 DIM A A1 A3 b D D2 E e L L2 L3 GENERIC MARKING DIAGRAM* L 1 D2 4 3 4X b 0.05 XX MM XX = Specific Device Code MM = Date Code D2 45 5 MILLIMETERS MIN MAX −−− 0.60 0.00 0.05 0.10 REF 0.20 0.30 1.00 BSC 0.43 0.53 1.00 BSC 0.65 BSC 0.20 0.30 0.27 0.37 0.02 0.12 M C A B NOTE 3 BOTTOM VIEW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. RECOMMENDED MOUNTING FOOTPRINT* 0.65 PITCH DETAIL B 2X 0.52 PACKAGE OUTLINE 1.30 0.53 4X 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON53254E UDFN4, 1.0X1.0, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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