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NCP5269BMNTWG

NCP5269BMNTWG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    VFQFN20

  • 描述:

    SYSTEM AGENT CONTROLLER WITH 2-B

  • 数据手册
  • 价格&库存
NCP5269BMNTWG 数据手册
Synchronous Buck Controller with 2-Bit VID Inputs NCP5269B • • • • • • • • • • • • • • • • • Wide Input Voltage Range: from 3.3 V to 28 V Three Selectable Fixed Frequency 300 kHz, 400 kHz or 600 kHz 2−Bit VID Selects Four Independent Voltages from 0.65 V to 1.5 V ±1.0% System Accuracy Differential Remote Output Voltage Sensing Soft Transient Control Reduces Inrush Current and Audio Noise Build−in Power−Good Masking Supports Voltage Identification (VID) On−The−Fly Transients Simple Resistor Programming Voltage Levels Programmable Soft−Start through a Single Capacitor Forced CCM Operation Input Supply Voltage Feed Forward Control Resistive or Lossless Inductor’s DCR Current Sensing Over−Temperature Protection Built−in Adaptive Gate Drivers Output Discharge Operation Built−in Over−Voltage, Under−Voltage and Over−Current Protection and Power Good Output This is a Pb−Free Device Applications • • • • • Notebooks, Desktops & Servers DDR Termination Voltage I/O Supplies System Power Supplies Graphic Cards © Semiconductor Components Industries, LLC, 2013 September, 2020 − Rev. 0 MARKING DIAGRAM 5269B ALYWG G 20 PIN QFN, 3x3 MN SUFFIX CASE 485BC 5269B A L Y W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS COMP FB FBRTN CSN CSP Features www.onsemi.com EN VCC VID1 VID0 V3 1 AGND BST GH SWN VCCP GL/FSET V2 V1 VREF PG PGND NCP5269B is a synchronous buck controller that is optimized for converting the battery voltage or adaptor voltage into power supply rails required in notebook and desktop system. NCP5269B is designed for applications requiring dynamically selected slew−rate controlled output voltages. The soft−start is programmed by a single capacitor. Voltage identification logic−inputs select four resistor programmed set−point reference voltages that directly set the output voltage of the converter between 0.65 V to 1.5 V. NCP5269B supports high efficiency, fast transient response and provides power good signal. Forced CCM operation provides DDR termination voltage with source/sink capability. The part operates with input voltage ranging from 3.3 V to 28 V. NCP5269B is available in a 20−pin 3 mm x 3 mm QFN package. (Top View) ORDERING INFORMATION Device Package Shipping† NCP5269BMNTWG QFN20 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 Publication Order Number: NCP5269B/D NCP5269B VID0 VID1 Precision Reference VID Decoder & Vref Selection V3 V2 V1 VREF + − Internal Reference FBRTN FB + E/A − OC & TRE Detection BST COMP Control Logic Ramp Generator And PWM Logic CSP CSN CSA GH SW + − VCC VCCP UVLO, UVP, OVP, Power Good OCP, TSD and Protection EN PG AGND Figure 1. Block Diagram www.onsemi.com 2 GL/FSET PGND NCP5269B Table 1. PIN DESCRIPTIONS Pin No. Symbol 1 EN 2 VCC Supply for analog circuit. 3 VID1 Logic input for reference voltage selector. Use in conjunction with the VID0 pin to select among four set−point reference voltages. 4 VID0 Logic input for reference voltage selector. Use in conjunction with the VID1 pin to select among four set−point reference voltages. 5 V3 Voltage set−point programming resistor input. 6 V2 Voltage set−point programming resistor input. 7 V1 Voltage set−point programming resistor input. External reference input when enabled by connecting the V3 pin to the VCC pin. 8 VREF 9 PG 10 PGND 11 GL/FSET 12 VCCP Power supply for MOSFET gate drive 13 SWN Switch node between the top MOSFET and bottom MOSFET. 14 GH Gate driver output of the top N−channel MOSFET. 15 BST Top gate driver input supply, a bootstrap capacitor connection between SWN and this pin. 16 CSP Inductor current differential sense non−inverting input. 17 CSN Inductor current differential sense inverting input. 18 FBRTN Description Logic control for enabling the switcher. Applying greater than 1.4 V will turn on the part. Connect to GND to disable. Soft−start programming capacitor input. Set-point reference voltage programming resistor input. Connects internally to the inverting input of the VSET voltage set-point amplifier. Power good indicator of the output voltage. Open−drain output. Ground reference and high−current return path for the bottom gate driver. Gate driver output of bottom N−channel MOSFET. And it is also used to set up switching frequency by connecting a resistor from this pin to ground. Feedback Return Input/Output. This pin remotely senses the output voltage. It is also used as the ground return for the VID reference voltage and the voltage error amplifier blocks. 19 FB 20 COMP Output voltage feed back. Output of the error amplifier. AGND Analog ground. Bottom thermal pad. www.onsemi.com 3 NCP5269B C2 R3 C3 R1 R2 FB CSN CSP 20 1 VCC 5.0 V 2 VID1 3 VID0 4 V3 VIN R4 COMP EN FBRTN C1 19 17 BST 15 AGND V2 9 V1 Cout CVCCP 10 PG Lo GL/FSET 11 8 V CCP 5 .0 V VCCP 12 7 Vout SWN 13 VREF CBOOT GH 14 6 Cin 16 FBRTN 5 Rset4 18 PGND CSS VCC PG Rset3 Rset2 Rset1 FBRTN Figure 2. Application Circuit Table 2. ABSOLUTE MAXIMUM RATINGS Rating Value VCC to AGND −0.3 V (DC) to 6.5 V FBRTN, PGND −0.3 V to +0.3 V SWN to PGND −5.0 V to 28 V, −10.0 V for T < 100 ns BST, GH to GND −0.3 V to 34 V BST to SWN, GH to SWN, VCC to PGND, DL to PGND −0.3 V to 6.5 V All other pins −0.3 V to 6.5 V Operating Temperature Range, TA −40°C to +100°C Junction Temperature, TJ −40°C to +100°C Storage Temperature Range, TS −55°C to +150°C Package Characteristic Thermal Resistance from Junction−to−Ambient (TA = +25°C), Rthja 35 °C/W (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This data is for solder on 4−layer board with 2 oz. copper. www.onsemi.com 4 NCP5269B Table 3. ELECTRICAL CHARACTERISTICS (VCC = VCCP = 5.0 V, Vout = 1.0 V, TA = +25°C for typical value; −40°C < TA < 100°C for min/max values unless noted otherwise) Parameter Symbol Test Conditions Min Typ Max Units POWER SUPPLY VCC Operation Voltage VCC 4.5 5 5.5 V VCCP Operation Voltage VCCP 4.5 5 5.5 V 3.9 4.2 4.45 V 300 350 400 mV 230 300 mV 1.0 mA VOLTAGE MONITORING & PROTECTION VCC Start Threshold VCC UVLO Hysteresis Power Good Low Voltage IPG(sink) = 4 mA Power Good High Leakage Current Power Good Startup Delay (Note 2) Power Good Propagation Delay Power Good Threshold Measure from SSEND to PG pos edge 3.3 ms Delay for power good in 3.3 ms Delay for power good out 1.5 ms Power Good in from high 101.5 105 107.5 % Power Good in from low 92.5 95 98.5 % PG hysteresis Power Good Masking Time FB Overvoltage Threshold 5 Triggered by any VID Change VOVFB−VID Relative to nominal VID Voltage % 425 150 200 ms 250 mV Overvoltage Propagation Delay 1.5 ms FB Over Voltage Threshold During Soft− Start 2.0 V FB Under−Voltage Trip Threshold VUVFB−VID Relative to nominal VID Voltage −360 Undervoltage Protection Blanking Time −300 −240 3.3 mV ms SUPPLY CURRENT VCC Quiescent Current VCC Shutdown Supply Current VCCP Quiescent Current VCCP Shutdown Supply Current BST Quiescent Current BST Shutdown Supply Current IVCC Vskip = 0 V, VFB = 1.5 V, EN = 5.0 (No Switching), GH and GL are open IVCC_SD 3.9 5 mA EN = 0 V 3 mA IVCCP Vskip = 0 V, VFB = 1.5 V, EN = 5.0 (No Switching), GH and GL are open 0.3 mA IVCCP_SD EN = 0 V 1 mA IBST Vskip = 0 V, VFB = 1.5 V, EN = 5.0 (No Switching), GH and GL are open 0.33 mA IBST_SD EN = 0, BST = 5 V, SWN = 0 1 mA FEEDBACK VOLTAGE Reference Voltage VREF V 0.65 System Accuracy VID0 = VID1 = High, PWM in CCM mode, −40°C < TA < 100°C −1.0 +1.0 TA = 25°C −0.35 +0.35 % Feedback Voltage Line Regulation Vcc = 4.5 V ~ 5.5 V 0.75 %/V 2. Guaranteed by characterization or correlation, not production tested www.onsemi.com 5 % NCP5269B Table 3. ELECTRICAL CHARACTERISTICS (VCC = VCCP = 5.0 V, Vout = 1.0 V, TA = +25°C for typical value; −40°C < TA < 100°C for min/max values unless noted otherwise) Parameter Symbol Test Conditions Min Typ Max Units VOLTAGE ERROR AMPLIFIER 80 Open Loop DC Gain (Note 2) Open Loop Unity Gain Bandwidth (Note 2) F0dB,EA dB 20 FB Input Voltage Range (Note 2) 0 FB Bias Current (Note 2) Relative to CSN = VID Slew Rate Maximum Output Voltage 10 mV of overdrive, ISOURCE = 2.0 mA Minimum Output Voltage 10 mV of overdrive, ISINK = 2.0 mA 2.0 1 −1 COMP pin to GND = 10 pF 3.3 MHz V mA 10 V/ms 3.5 V 0.2 0.3 V Output Source Current 10 mV of overdrive, Vout = 3.5 V 2 mA Output Sink Current 10 mV of overdrive, Vout = 1.0 V 2 mA Refer to AGND −0.2 2.0 V −30 30 mV DIFFERENTIAL CURRENT SENSE AMPLIFIER CSP and CSN Common−mode Input Voltage Range Differential Input Voltage Range OVER CURRENT PROTECTION V(CSP)−V(CSN), Vo = 1 V Vo = 0.5 V ~ 1.5 V OCP Threshold 27 26 30 30 33 34 mV 2_BITS VID 0.65 VID0, VID1 High Threshold Voltage V VID0, VID1 Low Threshold Voltage 0.4 VID0, VID1 Input Bias Current VID = 0 V V 1 nA VID0, VID1 Pull Down Current 2.5 mA Charging current during VID up (Note 2) 73 mA Discharging current during VID down (Note 2) 90 mA VID Delay time Any VID edge to 10% of FB change 200 ns 1.4 V EN EN High Threshold Voltage EN Low Threshold Voltage EN Input Bias Current IEN EN = 5 V EN Input Voltage 0.4 V 10 mA 5.5 V PWM 30 Minimum Controllable ON Time (Note 2) Minimum OFF Time (Note 2) 300 PWM Ramp Amplitude (Note 2) 500 ns VIN = 5 V 1.25 V VIN = 12 V 3 V 2. Guaranteed by characterization or correlation, not production tested www.onsemi.com 6 400 ns NCP5269B Table 3. ELECTRICAL CHARACTERISTICS (VCC = VCCP = 5.0 V, Vout = 1.0 V, TA = +25°C for typical value; −40°C < TA < 100°C for min/max values unless noted otherwise) Parameter Symbol Test Conditions Min Typ Max Units INTERNAL BST DIODE Forward Voltage Drop Reverse−bias Leakage Current IF = 10 mA, TA = 25°C 0.3 V VBST = 34 V, VSW = 28 V, TA = 25°C 0.1 1 mA EN = 0, Vout = 0.65 V 14 30 W SOFT STOP Output Discharge On−Resistance Discharge Threshold in Vcc 0.6 V 20 mA SOFT START Soft Start Current ISS OSCILLATOR Oscillator Frequency FSW Rset = 2K 270 300 Oscillator Frequency Accuracy 330 KHz ±10 % GATE DRIVER GH Pull−High Resistance (Note 2) RH_GH Source, V(BST−GH) = 0.1 1.3 1.8 W GH Pull−Low Resistance (Note 2) RL_GH Sink, V(GH−SWN) = 0.1 V 1.1 1.6 W GL Pull−High Resistance (Note 2) RH_GL Source, V(VCC−GL) = 0.1 V 1.0 1.8 W GL Pull−Low Resistance (Note 2) RL_GL Sink, V(GL−PGND) = 0.1 V 0.5 0.9 W GH Source Current 2 A GH Sink Current 2 A GL Source Current 2 A GL Sink Current 4 A Dead Time GL off to GH on 10 20 30 GH off to GL on 10 20 30 ns THERMAL SHUTDOWN Thermal Shutdown Threshold (Note 2) 150 °C Thermal Shutdown Hysteresis (Note 2) 25 °C 2. Guaranteed by characterization or correlation, not production tested www.onsemi.com 7 NCP5269B DETAILED DESCRIPTION VOUT R1 FB − Overview E/A COMP + NCP5269B is designed for applications requiring dynamically selected slew−rate controlled output voltages. It provides a synchronous PWM controller that incorporates all the control and protection circuitry necessary to satisfy a wide range of applications. Forced CCM operation provides DDR termination voltage with source/sink capability It also provides fast transient response and excellent stability. The features of the NCP5269B include a 2 bits VID selectable and external programmable reference, fixed three preset switching frequency, an error amplifier, adaptive gate driver, programmable soft−start, and very low shutdown current. The protection features of the NCP5269B include over−current protection, power good monitor, over voltage and under voltage protection, built in output discharge and thermal shutdown. R2 Vset VREF SW0 V1 SW1 V2 SW2 V3 SW3 R3 CSS R4 FBRTN R5 Reference Voltage Programming R6 The NCP5269B incorporates 2−bits VID, which selects four user−programmed reference voltages that reflect on Vref pin. NCP5269B measures VFB and VREF pin voltage relative to FBRTN pin. An internal reference that allows output voltages as low as 0.65 V. The tolerance of the internal reference is guaranteed over the entire operating temperature range of the controller. The reference voltage is trimmed using a test configuration that accounts for error amplifier offset and bias currents. The VID truth tables for each part are listed below. FBRTN Figure 3. External Reference Voltage and Output Voltage Setting Vset0, Vset1, Vset2 and Vset3 can be calculated based on the following equations: V set0 + V INREF Table 4. NCP5269B VID TRUTH TABLE VID STATE + − FBRTN REF 650 mV RESULTS ǒ ǒ ǒ Ǔ V set1 + V INREF @ 1 ) R3 R4 ) R5 ) R6 V set2 + V INREF @ 1 ) R3 ) R4 R5 ) R6 R3 ) R4 ) R5 R6 Ǔ VID0 VID1 CLOSE VREF VOUT 0 0 SW3 Vset3 VOUT4 V set3 + V INREF @ 1 ) 0 1 SW2 Vset2 VOUT3 1 0 SW1 Vset1 VOUT2 And V set3 u V set2 u V set1 u V set0 1 1 SW0 Vset0 VOUT1 Ǔ Vset0, Vset1, Vset2 and Vset3 are in the range of 0.65 V~1.5 V. If the required output voltage is higher than 0.65 V~1.5 V, a feedback voltage divider (a resistor R2 is added from FB pin to FBRTN) can be used to boost the output voltage up. So the output voltage can be calculated based on the following equations: ǒ RR Ǔ R @ ǒ1 ) Ǔ R R @ ǒ1 ) Ǔ R R @ ǒ1 ) Ǔ R V OUT1 + V set0 @ 1 ) 1 V OUT2 + V set1 1 V OUT3 + V set2 V OUT4 + V set3 2 2 1 2 1 2 And V OUT4 u V OUT3 u V OUT2 u V OUT1 www.onsemi.com 8 NCP5269B External Reference Voltage Oscillator Frequency NCP5269B accepts external reference voltage. To enable this feature, tie V3 to VCC and feed V1 from external reference. Then internal 650 mV reference is replaced by the voltage on V1 pin. The output voltage is programmed by resistor hooked from FB to FBRTN. VID0 and VID1 are disabled with this function. Please ground both VID0 and VID1 pins. All the resistors on Vref, V1, V2 and V3 are removed. The soft−start cap CSS remains on the Vref pin. The V2 pin can be left open. The reference voltage on V1 pin can be from 0.5 V to 2.0 V. However, the NCP5269B does not provide soft−transient feature and PG blanking for any reference voltage jump on V1. Therefore, external slewrate control or R/C is recommended to soften the reference voltage change on V1 pin input. The initial reference voltage on V1 pin should be established prior to EN assertion. A fixed precision oscillator is provided. The actual switching frequency is set at 300 KHz, 400 KHz or 600 KHz by the resistor on GL/FSET pin. The resistor and frequency can be referred to the table below. GL/FSET Resistor 2K 6K 15K Switching Frequency 300 KHz 400 KHz 600 KHz Error Amplifier The error amplifier’s primary function is to regulate the converter’s output voltage, as shown in the Applications Schematic. A type III compensation network must be connected around the error amplifier to stabilize the converter. It has a bandwidth of greater than 15 MHz, with open loop gain of at least 80 dB. The COMP output voltage is clamped to a level above the oscillator ramp in order to improve large−scale transient response. Differential Sensing of Output Voltage The NCP5269B combines differential sensing with a high accuracy VID DAC, referenced by a precision band gap source and a low offset error amplifier, to provide accurate output voltage. The output voltage is sensed between the FB and FBRTN pins. FB should be connected through a resistor to the positive regulation point. FBRTN should be connected directly to the negative remote sensing point. Soft Stop External Soft−Start and VID Change Slew Rate Adaptive Non−Overlap Gate Driver Soft−Stop or discharge mode is always on during faults or disable. In this mode, a fault (UVP, OVP, OCP, TSD) or disable (EN) causes the output to be discharged through an internal 20−ohm transistor inside of VO terminal. The time constant of soft−stop is a function of output capacitance and the resistance of the discharge transistor. To limit the start−up inrush current, a capacitor can be connected from Vref pin to ground to ramp up reference voltage slowly. During this period, the set amplifier output 20 mA current to charge capacitor CSS. The soft start period can be calculated by the following equation: ǒ t SS + −R A @ C SS @ LN 1 * In a synchronous buck converter, a certain dead time is required between the low side drive signal and high side drive signal to avoid shoot through. During the dead time, the body diode of the low side FET free-wheels the current. The body diode has much higher voltage drop than that of the MOSFET, which reduces the efficiency significantly. The longer the body diode conducts, the lower the efficiency. NCP5269B implements adaptive dead time control to minimize the dead time, as well as preventing shoot through from happening. Ǔ VO I SA1 @ R A Where: • RA is the sum of the series resistors from VREF to ground. RA = R3 + R4 + R5 + R6 • ISA1 is soft start current 20 mA. • Vo is the initial output voltage set by VID The output current of the set amplifier will change to +73 mA /− 90 mA after soft start period. So during voltage steps due to VID bit change, the slew rate of output voltage can be calculated as follows: ǒ t SL + −R A @ C SS @ LN 1 * PROTECTIONS Under Voltage Lockout (UVLO) There is under-voltage lock out protections (UVLO) for VCC in NCP5269B, which has a typical trip threshold voltage 4.2 V and trip hysteresis 300 mV. If UVLO is triggered, the device resets and waits for the voltage to rise up over the threshold voltage and restart the part. Please note this protection function DOES NOT trigger the fault counter to latch off the part. Ǔ V O2 * V O1 I SA2 @ R A Where: • ISA2 is the source/sink current limit of set amplifier during VID changing, which is 73/90 mA. • VO1 and VO2 are the voltages selected by VID inputs www.onsemi.com 9 NCP5269B L Over Voltage Protection (OVP) When VFB voltage is 200 mV (typical) above VREF voltage for over 1.5 ms blanking time, an OV fault is set. At that moment, the top gate driver is turned off and the bottom gate driver is turned on trying to discharge the output. The bottom gate driver will be turned off when VFB drops below under voltage threshold. EN resets or power recycle the device can exit the fault. OVP is disabled during VID changes. DCR Vin C Rs1 Rs2 Under Voltage Protection (UVP) + L DCR Vin RTHE + Vc − If inductor current exceeds the current threshold, the high−side gate driver will be turned off cycle−by−cycle. In the mean time, an internal OC fault timer will be triggered. If the fault still exists after about 8 clock cycles, the part latches off, both the high−side MOSFET and the low−side MOSFET are turned off. The fault remains set until the system has shutdown and re−applied VCC and/or the enable signal EN is toggled. The NCP5269B protects converter if over−current occurs. The current through inductor is continuously monitored with differential current sense. Current limit threshold Vth_OC between CS+ and CS− is internally fixed to 30 mV. The current limit can be programmed by inductor’s DCR and current sensing resistor divider with Rs1 and Rs2. The Rs1, Rs2 and C can be calculated as: Pre−Bias Startup In some applications the controller will be required to start switching when its output capacitors are charged anywhere from slightly above 0 V to just below the regulation voltage. This situation occurs for a number of reasons: the converter’s output capacitors may have residual charge on them or the converter’s output may be held up by a low current standby power supply. NCP5269B supports pre−bias start up by holding Low side FETs off till soft start ramp reaches the FB pin voltage. L DCR The inductor peak current limit is: R S2 R S1 ) R S2 Thermal Shutdown The DC current limit is: I LIM + I LIM(Peak) * RNTC Figure 5. Inductor DCR Current Sensing Circuit with Temperature Compensation Network Over Current Protection (OCP) k @ DCR R2 R1 , where k + Vout C R NCP5269B provides window comparator to monitor the FB voltage. The target voltage window and transition delay times of the PGOOD comparator are ±5% (typ.) and 3.3−ms delay for assertion (low to high), and ±10% (typ) and 1.5−ms delay for de−assertion (high to low) during running. The PG pin is open drain 5−mA pull down output. During startup, PG stays low until the feedback voltage is within the specified range for about 3.3 ms. To prevent a false alarm; the power−good circuit is masked during any VID change. The duration of the PG mask is set to approximately 425 ms by an internal timer. V th_DC − Figure 5 shows NTC resistor network to compensate the temperature drift of DCR. Power Good Monitor (PG) I LIM(Peak) + Vc Figure 4. Inductor DCR Current Sensing Circuit An UVP circuit monitors the VFB voltage to detect under voltage event. The under voltage limit is 300 mV (typical) below VREF voltage. If the VFB voltage is below this threshold over 3.3 ms, an UV fault is set and the device is latched off such that both top and bottom gate drives are off. EN resets or power recycle the device can exit the fault. UVP is delayed for soft start after EN goes high. UVP is disabled during VID changes. C @ ǒR S1ńńR S2Ǔ + Vout The NCP5269B protects itself from over heating with an internal thermal monitoring circuit. If the junction temperature exceeds the thermal shutdown threshold, an internal resistor will discharge Vref and the voltage at the COMP pin will be pulled to GND, and both the upper and lower MOSFETs will be shut OFF. When temperature drops below threshold, the part will auto restart with soft− start feature. V O @ ǒV in * V OǓ 2 @ V in @ f SW @ L where Vin is the input supply voltage of the power stage, and fsw is normal switching frequency. www.onsemi.com 10 NCP5269B PACKAGE DIMENSIONS QFN20 3x3, 0.4P CASE 485BC ISSUE O D A B ÍÍÍ ÍÍÍ ÍÍÍ PIN ONE REFERENCE L1 DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS ÉÉÉ ÉÉÉ ÉÉÉ 0.10 C 2X EXPOSED Cu 2X 0.10 C TOP VIEW A3 DETAIL B 0.05 C L L ÇÇ ÉÉ A3 A1 DETAIL B A 0.05 C MOLD CMPD ALTERNATE CONSTRUCTIONS A1 NOTE 4 C SIDE VIEW SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A 0.80 1.00 A1 --0.05 A3 0.20 REF b 0.15 0.25 D 3.00 BSC D2 1.70 1.90 E 3.00 BSC E2 1.70 1.90 e 0.40 BSC K 0.30 REF L 0.20 0.40 L1 0.00 0.15 SOLDERING FOOTPRINT* 20X 0.52 D2 DETAIL A 6 1 11 20X K E2 2X 3.30 2X 1.86 1 20X L e 16 BOTTOM VIEW 20X b 0.07 C A 0.05 C 20X B 0.40 PITCH NOTE 3 0.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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