NCP583EVB

NCP583 Ultra-Low Iq 150 mA CMOS LDO Regulator with Enable The NCP583 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy and low quiescent current. These devices feature an enable function which lowers current consumption significantly and are offered in two small packages; SC−82AB and the SOT−563. A 1.0 mF ceramic capacitor is the recommended value to be used with these devices on the output pin. www.onsemi.com MARKING DIAGRAMS Features • • • Ultra−Low Dropout Voltage of 250 mV at 150 mA Excellent Line Regulation of 0.05%/V Excellent Load Regulation of 20 mV High Output Voltage Accuracy of "2% Ultra−Low Iq Current of 1.0 mA Very Low Shutdown Current of 0.1 mA Wide Output Voltage Range of 1.5 V to 3.3 V Low Temperature Drift Coefficient on the Output Voltage of "100 ppm/°C Fold Back Protection Circuit Input Voltage up to 6.5 V These are Pb−Free Devices SC−82AB SQ SUFFIX CASE 419C 4 XX TT • • • • • • • • 1 1 6 1 SOT−563 XV SUFFIX CASE 463A XXX XTT 1 X T = Device Code = Traceability Information ORDERING INFORMATION Typical Applications See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. • Portable Equipment • Hand−Held Instrumentation • Camcorders and Cameras Vin Vout + Vref Current Limit CE GND Figure 1. Simplified Block Diagram © Semiconductor Components Industries, LLC, 2016 January, 2016 − Rev. 15 1 Publication Order Number: NCP583/D NCP583 PIN FUNCTION DESCRIPTION SOT−563 Pin SC−82AB Pin Symbol Description 1 4 Vin 2 2 GND Power supply ground. 3 3 Vout Regulated output voltage. 4 − NC No connect. 5 − GND 6 1 CE Power supply input voltage. Power supply ground. Chip enable pin. MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage Vin 6.5 V Input Voltage (CE Pin) VCE 6.5 V Output Voltage Vout −0.3 to Vin +0.3 V Output Current Iout 180 mA Thermal Junction Resistance SC−82AB SOT−563 °C/W RqJA 263 200 ESD Capability, Human Body Model, C = 100 pF, R = 1.5 kW ESDHBM 2000 V ESD Capability, Machine Model, C = 200 pF, R = 0 W ESDMM 200 V TA −40 to +85 °C TJ(max) 125 °C Tstg −55 to +150 °C Operating Ambient Temperature Range Maximum Junction Temperature Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (Vin = Vout + 1.0 V, TA = −40°C to +85°C, unless otherwise noted.) Characteristic Input Voltage Output Voltage (1.0 mA ≤ Iout ≤ 30 mA) Symbol Min Typ Max Unit Vin 1.7 − 6.0 V Vout Vout x 0.98 − Vout x 1.02 V Line Regulation (Iout = 30 mA) (Vout + 0.5 V v Vin v 6.0 V) Regline − 0.05 0.20 %/V Load Regulation (1.0 mA ≤ Iout ≤ 150 mA) Regload − 20 40 mV − − − − 0.60 0.50 0.35 0.25 0.90 0.75 0.55 0.40 1.0 1.5 mA Dropout Voltage (Iout = 150 mA) Vout = 1.5 V 1.7 V v Vout v 1.9 V 2.1 V v Vout v 2.7 V 2.8 V v Vout v 3.3 V VDO V Quiescent Current (Iout = 0 mA) Iq − Output Current Iout 150 − − mA Shutdown Current (VCE = Gnd) ISD − 0.1 1.0 mA Output Short Circuit Current (Vout = 0) Ilim − 40 − mA Enable Input Threshold Voltage − High Enable Input Threshold Voltage − Low Vthenh Vthenl 1.2 0 − − 6.0 0.3 V Output Voltage Temperature Coefficient (Iout = 30 mA, −40°C ≤ TA ≤ 85°C) DVout/DT − ±100 − ppm/°C www.onsemi.com 2 NCP583 TYPICAL CHARACTERISTICS 2.9 2.8 2.5 Vin = 3.1 V OUTPUT VOLTAGE Vout (V) OUTPUT VOLTAGE Vout (V) 3.0 2.0 3.3 V 3.5 V 1.5 1.0 0.5 Vout = 2.8 V 0 0 100 300 200 400 2.7 2.6 2.5 2.4 Iout = 1.0 mA 2.3 Iout = 30 mA 2.2 Iout = 50 mA 2.1 2.0 1.0 500 Vout = 2.8 V 2.0 OUTPUT CURRENT Iout (mA) 5.0 6.0 Figure 3. Output Voltage vs. Input Voltage 1.2 2.86 1.0 OUTPUT VOLTAGE, Vout (V) QUIESCENT CURRENT, Iq (mA) 4.0 INPUT VOLTAGE Vin (V) Figure 2. Output Voltage vs. Output Current 0.8 0.6 0.4 0.2 2.84 2.82 2.80 2.78 2.76 Vout = 2.8 V 0.0 0 1.0 2.0 4.0 3.0 5.0 Vout = 2.8 V 2.74 −40 6.0 −15 INPUT VOLTAGE Vin (V) 35 60 85 Figure 5. Output Voltage vs. Temperature 1.4 QUIESCENT CURRENT, Iq (mA) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Vout = 1.5 V 0.0 −40 10 TEMPERATURE (°C) Figure 4. Quiescent Current vs. Input Voltage QUIESCENT CURRENT, Iq (mA) 3.0 −15 10 35 60 1.2 1.0 0.8 0.6 0.4 0.2 Vout = 2.8 V 0.0 −40 85 TEMPERATURE (°C) −15 10 35 60 TEMPERATURE (°C) Figure 6. Quiescent Current vs. Temperature Figure 7. Quiescent Current vs. Temperature www.onsemi.com 3 85 NCP583 TYPICAL CHARACTERISTICS 0.40 Vout = 1.5 V 0.9 85°C 0.35 DROPOUT VOLTAGE, VDO (V) DROPOUT VOLTAGE, VDO (V) 1.0 0.8 0.30 25°C 0.7 85°C 25°C 0.25 0.6 −40°C 0.5 0.20 0.4 0.15 0.3 −40°C 0.10 0.2 0.05 0.1 Vout = 1.8 V 0.0 0 25 50 75 100 0.00 0 150 125 25 OUTPUT CURRENT Iout (mA) 100 125 150 Figure 9. Dropout Voltage vs. Output Current 0.40 70 RIPPLE REJECTION, RR (dB) 0.35 0.30 0.25 85°C 25°C 0.20 0.15 −40°C 0.10 0.05 Vout = 2.8 V 25 50 75 100 125 Vout = 2.8 V Vin = 3.8 V + 0.5 Vp−p Cout = 0.1 mF 60 50 40 30 Iout = 1.0 mA 20 Iout = 30 mA 10 Iout = 50 mA 0 0.1 150 10 1 OUTPUT CURRENT Iout (mA) FREQUENCY, f (kHz) Figure 11. Ripple Rejection vs. Frequency Figure 10. Dropout Voltage vs. Output Current 70 RIPPLE REJECTION, RR (dB) DROPOUT VOLTAGE, VDO (V) 75 OUTPUT CURRENT Iout (mA) Figure 8. Dropout Voltage vs. Output Current 0.00 0 50 Vout = 2.8 V Vin = 3.8 V + 0.5 Vp−p Cout = 1.0 mF 60 50 40 30 Iout = 1.0 mA 20 Iout = 30 mA 10 Iout = 50 mA 0 0.1 10 1 100 FREQUENCY, f (kHz) Figure 12. Ripple Rejection vs. Frequency www.onsemi.com 4 100 NCP583 TYPICAL CHARACTERISTICS Cout = 0.1 mF 6 5 5.0 Input Voltage 4.5 4 4.0 3 3.5 2 Output Voltage 3.0 1 INPUT VOLTAGE, Vin (V) OUTPUT VOLTAGE, Vout (V) 5.5 0 2.5 2.0 0 20 40 60 80 100 120 140 160 180 −1 200 TIME, T (ms) 6 5.0 5 Input Voltage 4.5 4 4.0 3 3.5 2 Output Voltage 3.0 1 INPUT VOLTAGE, Vin (V) OUTPUT VOLTAGE, Vout (V) Cout = 0.47 mF 5.5 0 2.5 2.0 0 20 40 60 80 100 120 140 160 180 −1 200 TIME, T (ms) Cout = 1.0 mF 6 5 5.0 Input Voltage 4.5 4 4.0 3 3.5 2 Output Voltage 3.0 1 0 2.5 2.0 0 20 40 60 80 100 120 140 160 TIME, T (ms) Figure 13. Input Transient Response (Vout = 2.8 V, Iout = 30 mA, tr = tf = 5.0 ms, Cin = 0) www.onsemi.com 5 180 −1 200 INPUT VOLTAGE, Vin (V) OUTPUT VOLTAGE, Vout (V) 5.5 NCP583 TYPICAL CHARACTERISTICS Cout = 1.0 mF 20 4.5 10 Output Current 4.0 0 3.5 −10 Output Voltage 3.0 2.5 OUTPUT CURRENT, Iout (mA) OUTPUT VOLTAGE, Vout (V) 5.0 2.0 0 100 200 300 400 500 600 700 800 900 1000 TIME, T (ms) Cout = 10 mF 20 4.5 10 Output Current 4.0 0 3.5 −10 Output Voltage 3.0 2.5 2.0 0 100 200 300 400 500 600 700 800 TIME, T (ms) Figure 14. Load Transient Response (Vout = 2.8 V, tr = tf = 5.0 ms, Vin = 3.8 V) www.onsemi.com 6 900 1000 OUTPUT CURRENT, Iout (mA) OUTPUT VOLTAGE, Vout (V) 5.0 NCP583 TYPICAL CHARACTERISTICS Cout = 0.1 mF 150 4.5 100 Output Current 4.0 50 3.5 0 Output Voltage 3.0 2.5 OUTPUT CURRENT, Iout (mA) OUTPUT VOLTAGE, Vout (V) 5.0 2.0 0 20 40 60 80 100 120 140 160 180 200 TIME, T (ms) Cout = 0.47 mF 150 4.5 100 Output Current 4.0 50 3.5 0 Output Voltage 3.0 2.5 OUTPUT CURRENT, Iout (mA) OUTPUT VOLTAGE, Vout (V) 5.0 2.0 0 20 40 60 80 100 120 140 160 180 200 TIME, T (ms) 150 4.5 100 Output Current 4.0 50 3.5 0 Output Voltage 3.0 2.5 2.0 0 20 40 60 80 100 120 140 160 TIME, T (ms) Figure 15. Load Transient Response (Vout = 2.8 V, tr = tf = 5.0 ms, Vin = 3.8 V) www.onsemi.com 7 180 200 OUTPUT CURRENT, Iout (mA) OUTPUT VOLTAGE, Vout (V) Cout = 1.0 mF 5.0 NCP583 APPLICATION INFORMATION Input Decoupling Output Decoupling A 1.0 mF ceramic capacitor is the recommended value to be connected between Vin and GND. For PCB layout considerations, the traces of Vin and GND should be sufficiently wide in order to minimize noise and prevent unstable operation. It is recommended to use a 0.1 mF ceramic capacitor on the Vout pin. For better performance, select a capacitor with low Equivalent Series Resistance (ESR). For PCB layout considerations, place the output capacitor close to the output pin and keep the leads short as possible. ORDERING INFORMATION Device Output Type / Features Nominal Output Voltage Marking Package Shipping† NCP583SQ15T1G Active High w/Enable 1.5 A5 SC−82AB (Pb−Free) 3000 / Tape & Reel NCP583SQ18T1G Active High w/Enable 1.8 A8 SC−82AB (Pb−Free) 3000 / Tape & Reel NCP583SQ25T1G Active High w/Enable 2.5 B5 SC−82AB (Pb−Free) 3000 / Tape & Reel NCP583SQ27T1G Active High w/Enable 2.7 B7 SC−82AB (Pb−Free) 3000 / Tape & Reel NCP583SQ28T1G Active High w/Enable 2.8 B8 SC−82AB (Pb−Free) 3000 / Tape & Reel NCP583SQ30T1G Active High w/Enable 3.0 C0 SC−82AB (Pb−Free) 3000 / Tape & Reel NCP583SQ33T1G Active High w/Enable 3.3 C3 SC−82AB (Pb−Free) 3000 / Tape & Reel NCP583XV15T2G Active High w/Enable 1.5 G15B SOT−563 (Pb−Free) 4000 / Tape & Reel NCP583XV18T2G Active High w/Enable 1.8 G18B SOT−563 (Pb−Free) 4000 / Tape & Reel NCP583XV25T2G Active High w/Enable 2.5 G25B SOT−563 (Pb−Free) 4000 / Tape & Reel NCP583XV26T2G Active High w/Enable 2.6 G26B SOT−563 (Pb−Free) 4000 / Tape & Reel NCP583XV28T2G Active High w/Enable 2.8 G28B SOT−563 (Pb−Free) 4000 / Tape & Reel NCP583XV29T2G Active High w/Enable 2.9 G29B SOT−563 (Pb−Free) 4000 / Tape & Reel NCP583XV30T2G Active High w/Enable 3.0 G30B SOT−563 (Pb−Free) 4000 / Tape & Reel NCP583XV31T2G Active High w/Enable 3.1 G31B SOT−563 (Pb−Free) 4000 / Tape & Reel NCP583XV33T2G Active High w/Enable 3.3 G33B SOT−563 (Pb−Free) 4000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Other voltages are available. Consult your ON Semiconductor representative. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−82AB CASE 419C−02 ISSUE F DATE 22 JUN 2012 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. 419C−01 OBSOLETE. NEW STANDARD IS 419C−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A G C D 3 PL N 3 4 K B S 1 2 H J F L 0.05 (0.002) 0.90 0.035 0.70 0.028 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.008 0.016 0.012 0.020 0.043 0.059 0.000 0.004 0.004 0.010 0.004 −−− 0.002 BSC 0.008 REF 0.07 0.09 XXX M G 0.65 0.026 0.95 0.037 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.20 0.40 0.30 0.50 1.10 1.50 0.00 0.10 0.10 0.26 0.10 −−− 0.05 BSC 0.20 REF 1.80 2.40 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 1.30 0.0512 DIM A B C D F G H J K L N S 1 XXX = Specific Device Code M = Month Code G = Pb−Free Package 1.90 0.075 SCALE 10:1 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ARB18939C SC−82AB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE H 6 1 SCALE 4:1 DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD DATE 26 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOT−563, 6 LEAD CASE 463A ISSUE H DATE 26 JAN 2021 GENERIC MARKING DIAGRAM* XX MG 1 XX = Specific Device Code M = Month Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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