NCP583XV15T2G

NCP583 Ultra−Low Iq 150 mA CMOS LDO Regulator with Enable The NCP583 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy and low quiescent current. These devices feature an enable function which lowers current consumption significantly and are offered in two small packages; SC−82AB and the SOT−563. A 1.0 mF ceramic capacitor is the recommended value to be used with these devices on the output pin. Features http://onsemi.com MARKING DIAGRAMS SC−82AB SQ SUFFIX CASE 419C 1 1 • • • • • • • • • • • Ultra−Low Dropout Voltage of 250 mV at 150 mA Excellent Line Regulation of 0.05%/V Excellent Load Regulation of 20 mV High Output Voltage Accuracy of "2% Ultra−Low Iq Current of 1.0 mA Very Low Shutdown Current of 0.1 mA Wide Output Voltage Range of 1.5 V to 3.3 V Low Temperature Drift Coefficient on the Output Voltage of "100 ppm/°C Fold Back Protection Circuit Input Voltage up to 6.5 V These are Pb−Free Devices 4 xxx M G G M 6 1 SOT−563 XV SUFFIX CASE 463A 1 xxx M G G xxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. Typical Applications • Portable Equipment • Hand−Held Instrumentation • Camcorders and Cameras ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Vin Vout − + Vref Current Limit CE GND Figure 1. Simplified Block Diagram © Semiconductor Components Industries, LLC, 2006 1 April, 2006 − Rev. 5 Publication Order Number: NCP583/D NCP583 PIN FUNCTION DESCRIPTION SOT−563 Pin 1 2 3 4 5 6 SC−82AB Pin 4 2 3 − − 1 Symbol Vin GND Vout NC GND CE Power supply input voltage. Power supply ground. Regulated output voltage. No connect. Power supply ground. Chip enable pin. Description MAXIMUM RATINGS Rating Input Voltage Input Voltage (CE or CE Pin) Output Voltage Output Current Power Dissipation SC−82AB SOT−563 Operating Junction Temperature Range Storage Temperature Range Symbol Vin VCE Vout Iout PD 150 500 TJ Tstg −40 to +85 +150 °C °C Value 6.5 6.5 −0.3 to Vin +0.3 180 Unit V V V mA mW Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (Vin = Vout + 1.0 V, TA = 25°C, unless otherwise noted.) Characteristic Input Voltage Output Voltage (1.0 mA ≤ Iout ≤ 30 mA) Line Regulation (Iout = 30 mA) (Vout + 0.5 V v Vin v 6.0 V) Load Regulation (1.0 mA ≤ Iout ≤ 100 mA) Dropout Voltage (Iout = 150 mA) Vout = 1.5 V Vout = 1.8 V Vout = 2.5 V 2.8 V v Vout v 3.3 V Quiescent Current (Iout = 0 mA) Output Current Shutdown Current (VCE = Gnd) Output Short Circuit Current (Vout = 0) Enable Input Threshold Voltage High Low Symbol Vin Vout Regline Regload VDO − − − − Iq Iout ISD Ilim Vthenh Vthenl − 150 − − 1.2 0 0.60 0.50 0.35 0.25 1.0 − 0.1 40 − − 0.90 0.75 0.55 0.40 1.5 − 1.0 − 6.0 0.3 mA mA mA mA V Min 1.7 Vout X 0.980 − − Typ − − 0.05 20 Max 6.0 Vout X 1.020 0.20 40 Unit V V %/V mV V http://onsemi.com 2 NCP583 TYPICAL CHARACTERISTICS 3.0 OUTPUT VOLTAGE Vout (V) OUTPUT VOLTAGE Vout (V) 2.5 2.0 1.5 1.0 0.5 Vout = 2.8 V 0 0 100 200 300 400 500 3.3 V 3.5 V Vin = 3.1 V 2.9 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2.0 1.0 2.0 Iout = 50 mA Vout = 2.8 V 3.0 4.0 5.0 6.0 Iout = 1.0 mA Iout = 30 mA OUTPUT CURRENT Iout (mA) INPUT VOLTAGE Vin (V) Figure 2. Output Voltage vs. Output Current Figure 3. Output Voltage vs. Input Voltage 1.2 QUIESCENT CURRENT, Iq (mA) OUTPUT VOLTAGE, Vout (V) Vout = 2.8 V 0.0 0 1.0 2.0 3.0 4.0 5.0 6.0 1.0 0.8 0.6 0.4 0.2 2.86 2.84 2.82 2.80 2.78 2.76 Vout = 2.8 V 2.74 −40 −15 10 35 60 85 INPUT VOLTAGE Vin (V) TEMPERATURE (°C) Figure 4. Quiescent Current vs. Input Voltage 1.4 QUIESCENT CURRENT, Iq (mA) 1.2 1.0 0.8 0.6 0.4 0.2 Vout = 1.5 V 0.0 −40 −15 10 35 60 85 QUIESCENT CURRENT, Iq (mA) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Figure 5. Output Voltage vs. Temperature Vout = 2.8 V 0.0 −40 −15 10 35 60 85 TEMPERATURE (°C) TEMPERATURE (°C) Figure 6. Quiescent Current vs. Temperature Figure 7. Quiescent Current vs. Temperature http://onsemi.com 3 NCP583 TYPICAL CHARACTERISTICS 1.0 DROPOUT VOLTAGE, VDO (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 −40°C 25°C Vout = 1.5 V 85°C 0.40 DROPOUT VOLTAGE, VDO (V) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 Vout = 1.8 V 0.00 0 25 50 75 100 125 150 −40°C 25°C 85°C OUTPUT CURRENT Iout (mA) OUTPUT CURRENT Iout (mA) Figure 8. Dropout Voltage vs. Output Current Figure 9. Dropout Voltage vs. Output Current 0.40 DROPOUT VOLTAGE, VDO (V) RIPPLE REJECTION, RR (dB) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 Vout = 2.8 V 0.00 0 25 50 75 100 125 150 −40°C 25°C 85°C 70 60 50 40 30 20 10 0 0.1 Iout = 1.0 mA Iout = 30 mA Iout = 50 mA 1 10 100 Vout = 2.8 V Vin = 3.8 V + 0.5 Vp−p Cout = 0.1 mF OUTPUT CURRENT Iout (mA) FREQUENCY, f (kHz) Figure 10. Dropout Voltage vs. Output Current Figure 11. Ripple Rejection vs. Frequency 70 RIPPLE REJECTION, RR (dB) 60 50 40 30 Iout = 1.0 mA 20 10 0 0.1 Vout = 2.8 V Vin = 3.8 V + 0.5 Vp−p Cout = 1.0 mF Iout = 30 mA Iout = 50 mA 1 10 100 FREQUENCY, f (kHz) Figure 12. Ripple Rejection vs. Frequency http://onsemi.com 4 NCP583 TYPICAL CHARACTERISTICS 5.5 OUTPUT VOLTAGE, Vout (V) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 0 20 40 60 80 100 120 140 160 180 TIME, T (ms) Output Voltage Input Voltage Cout = 0.1 mF 6 5 4 3 2 1 0 −1 200 INPUT VOLTAGE, Vin (V) INPUT VOLTAGE, Vin (V) INPUT VOLTAGE, Vin (V) Cout = 0.47 mF 5.5 OUTPUT VOLTAGE, Vout (V) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 0 20 40 60 80 100 120 140 160 180 TIME, T (ms) Output Voltage Input Voltage 6 5 4 3 2 1 0 −1 200 Cout = 1.0 mF 5.5 OUTPUT VOLTAGE, Vout (V) 5.0 Input Voltage 4.5 4.0 3.5 3.0 2.5 2.0 0 20 40 60 80 100 120 140 160 180 TIME, T (ms) Output Voltage 4 3 2 1 0 −1 200 6 5 Figure 13. Input Transient Response (Vout = 2.8 V, Iout = 30 mA, tr = tf = 5.0 ms, Cin = 0) http://onsemi.com 5 NCP583 TYPICAL CHARACTERISTICS Cout = 1.0 mF 5.0 OUTPUT VOLTAGE, Vout (V) 4.5 Output Current 4.0 3.5 3.0 2.5 2.0 0 100 200 300 400 500 600 700 800 900 1000 TIME, T (ms) Output Voltage 0 −10 20 10 OUTPUT CURRENT, Iout (mA) OUTPUT CURRENT, Iout (mA) Cout = 10 mF 5.0 OUTPUT VOLTAGE, Vout (V) 4.5 Output Current 4.0 3.5 3.0 2.5 2.0 0 100 200 300 400 500 600 700 800 900 1000 TIME, T (ms) Output Voltage 0 −10 20 10 Figure 14. Load Transient Response (Vout = 2.8 V, tr = tf = 5.0 ms, Vin = 3.8 V) http://onsemi.com 6 NCP583 TYPICAL CHARACTERISTICS Cout = 0.1 mF 5.0 OUTPUT VOLTAGE, Vout (V) 4.5 Output Current 4.0 3.5 3.0 2.5 2.0 0 20 40 60 80 100 120 140 160 180 200 TIME, T (ms) Output Voltage 50 0 150 100 OUTPUT CURRENT, Iout (mA) OUTPUT CURRENT, Iout (mA) OUTPUT CURRENT, Iout (mA) Cout = 0.47 mF 5.0 OUTPUT VOLTAGE, Vout (V) 4.5 Output Current 4.0 3.5 3.0 2.5 2.0 0 20 40 60 80 100 120 140 160 180 200 TIME, T (ms) Output Voltage 50 0 150 100 Cout = 1.0 mF 5.0 OUTPUT VOLTAGE, Vout (V) 4.5 Output Current 4.0 3.5 3.0 2.5 2.0 0 20 40 60 80 100 120 140 160 180 200 TIME, T (ms) Output Voltage 50 0 150 100 Figure 15. Load Transient Response (Vout = 2.8 V, tr = tf = 5.0 ms, Vin = 3.8 V) http://onsemi.com 7 NCP583 APPLICATION INFORMATION Input Decoupling Output Decoupling A 1.0 mF ceramic capacitor is the recommended value to be connected between Vin and GND. For PCB layout considerations, the traces of Vin and GND should be sufficiently wide in order to minimize noise and prevent unstable operation. It is recommended to use a 0.1 mF ceramic capacitor on the Vout pin. For better performance, select a capacitor with low Equivalent Series Resistance (ESR). For PCB layout considerations, place the output capacitor close to the output pin and keep the leads short as possible. ORDERING INFORMATION Device NCP583SQ15T1G NCP583SQ18T1G NCP583SQ25T1G NCP583SQ28T1G NCP583SQ30T1G NCP583SQ33T1G NCP583XV15T2G NCP583XV18T2G NCP583XV25T2G NCP583XV28T2G NCP583XV29T2G NCP583XV30T2G NCP583XV33T2G Output Type / Features Active High w/Enable Active High w/Enable Active High w/Enable Active High w/Enable Active High w/Enable Active High w/Enable Active High w/Enable Active High w/Enable Active High w/Enable Active High w/Enable Active High w/Enable Active High w/Enable Active High w/Enable Nominal Output Voltage 1.5 1.8 2.5 2.8 3.0 3.3 1.5 1.8 2.5 2.8 2.9 3.0 3.3 Marking A5 A8 B5 B8 C0 C3 G15B G18B G25B G28B G29B G30B G33B Package SC−82AB (Pb−Free) SC−82AB (Pb−Free) SC−82AB (Pb−Free) SC−82AB (Pb−Free) SC−82AB (Pb−Free) SC−82AB (Pb−Free) SOT−563 (Pb−Free) SOT−563 (Pb−Free) SOT−563 (Pb−Free) SOT−563 (Pb−Free) SOT−563 (Pb−Free) SOT−563 (Pb−Free) SOT−563 (Pb−Free) Shipping† 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 4000 Tape & Reel 4000 Tape & Reel 4000 Tape & Reel 4000 Tape & Reel 4000 Tape & Reel 4000 Tape & Reel 4000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Other voltages are available. Consult your ON Semiconductor representative. http://onsemi.com 8 NCP583 PACKAGE DIMENSIONS SOT−563 XV SUFFIX CASE 463A−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 D −X− A L 4 6 5 1 2 3 E −Y− HE b e 5 6 PL M C XY 0.08 (0.003) DIM A b C D E e L HE SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 NCP583 PACKAGE DIMENSIONS SC−82AB SQ SUFFIX CASE 419C−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. 419C−01 OBSOLETE. NEW STANDARD IS 419C−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A B C D F G H J K L N S MILLIMETERS MIN MAX 1.8 2.2 1.15 1.35 0.8 1.1 0.2 0.4 0.3 0.5 1.1 1.5 0.0 0.1 0.10 0.26 0.1 −−− 0.05 BSC 0.2 REF 1.8 2.4 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.008 0.016 0.012 0.020 0.043 0.059 0.000 0.004 0.004 0.010 0.004 −−− 0.002 BSC 0.008 REF 0.07 0.09 A G D 3 PL 4 3 C N S 1 2 B K F L H J 0.05 (0.002) SOLDERING FOOTPRINT* 1.30 0.512 0.65 0.026 0.90 0.035 0.70 0.028 1.90 0.95 0.075 0.037 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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