NCS2530ADG

NCS2530, NCS2530A Triple 1.1 mA 200 MHz Current Feedback Op Amp with Enable Feature NCS2530 is a triple 1.1 mA 200 MHz current feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The current feedback architecture allows for a superior bandwidth and low power consumption. This device features an enable pin. Features http://onsemi.com MARKING DIAGRAM NCS2530AG AWLYWW 1 TSSOP−16 DT SUFFIX CASE 948F NCS 2530 ALYW G G 14 14 1 SOIC−14 D SUFFIX CASE 751A • • • • • • • • • • • • • −3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 200 MHz Typ Slew Rate 450 V/ms Supply Current 1.1 mA per amplifier Input Referred Voltage Noise 4.0 nV/ Hz THD −55 dB (f = 5.0 MHz, VO = 2.0 Vp−p) Output Current 100 mA Enable Pin Available These are Pb−Free Devices Portable Video Line Drivers Radar/Communication Receivers Set Top Box NTSC/PAL/HDTV 3 2 Gain = +2 RF = 1.2kW RL = 100W 16 Applications 1 A = Assembly Location WL, L = Wafer Lot Y = Year WW, W = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) SOIC−14 PINOUT (NCS2530A ONLY) NC NC 1 2 3 4 5 6 7 −+ +− +− 14 13 12 11 10 9 8 OUT 2 −IN2 +IN2 VEE +IN3 −IN3 OUT3 NORMAILIZED GAIN(dB) VS = ±5V VOUT = 0.5VPP 1 0 −1 −2 −3 −4 −5 VS = ±5V VOUT = 0.7VPP NC VCC +IN1 −IN1 OUT1 VS = ±2.5V VOUT = 2.0VPP VS = ±5V VOUT = 2.0VPP VS = ±2.5V VOUT = 0.7VPP NC = NO CONNECT (Top View) TSSOP−16 PINOUT (NCS2530 ONLY) −6 10k VS = ±2.5V VOUT = 0.5VPP 100M 1G −IN1 +IN1 VEE −IN2 +IN2 VEE +IN3 −IN3 1 2 3 4 5 6 7 8 − + − + 16 15 14 13 12 11 EN1 OUT1 VCC EN2 OUT2 VCC OUT3 EN3 100k 1M 10M FREQUENCY (Hz) Figure 1. Frequency Response: Gain (dB) vs. Frequency Av = +2.0, RL = 100 W + − 10 9 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 13 of this data sheet. © Semiconductor Components Industries, LLC, 2007 January, 2007 − Rev. 1 1 Publication Order Number: NCS2530/D NCS2530, NCS2530A PIN FUNCTION DESCRIPTION SOIC−14 (NCS2530A Only) 7, 8, 14 TSSOP−16 (NCS2530 Only) 10, 12, 15 Symbol OUTx Function Output Equivalent Circuit VCC ESD OUT VEE 11 5, 10, 12 3, 6 2, 5, 7 VEE +INx Negative Power Supply Non−inverted Input ESD +IN VCC ESD −IN VEE 6, 9, 13 4 N/A 1, 4, 8 11, 14 9, 13, 16 −INx VCC EN Inverted Input Positive Power Supply Enable EN See Above VCC ESD VEE ENABLE PIN TRUTH TABLE (NCS2530 Only) High* Enable *Default open state VCC Low Disabled Enabled +IN −IN OUT CC VEE Figure 2. Simplified Device Schematic http://onsemi.com 2 NCS2530, NCS2530A ATTRIBUTES Characteristics ESD Human Body Model Machine Model Charged Device Model Value 2.0 kV (Note 1) 200 V 1.0 kV Level 1 UL 94 V−0 @ 0.125 in Moisture Sensitivity (Note 2) Flammability Rating Oxygen Index: 28 to 34 1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV. 2. For additional information, see Application Note AND8003/D. MAXIMUM RATINGS Parameter Power Supply Voltage Input Voltage Range Input Differential Voltage Range Output Current Maximum Junction Temperature (Note 3) Operating Ambient Temperature Storage Temperature Range Power Dissipation Thermal Resistance, Junction−to−Air TSSOP−16 SOIC−14 Symbol VS VI VID IO TJ TA Tstg PD RqJA Rating 11 vV S vV S 100 150 −40 to +85 −60 to +150 (See Graph) 178 156 Unit VDC VDC VDC mA °C °C °C mW °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150°C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated’’ condition for an extended period can result in device damage. MAXIMUM POWER DISSIPATION (mW) MAXIMUM POWER DISSIPATION 1400 1200 1000 800 600 400 200 0 −50 −25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) TSSOP−16 SOIC−14 Figure 3. Power Dissipation vs. Temperature http://onsemi.com 3 NCS2530, NCS2530A AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol BW Characteristic Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth Differential Gain Differential Phase Slew Rate Settling Time 0.01% 0.1% Rise and Fall Time Turn−on Time (Note 4) Turn−off Time (Note 4) Total Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion Third−Order Intercept Spurious−Free Dynamic Range Input Referred Voltage Noise Input Referred Current Noise f = 5.0 MHz, VO = 2.0 Vp−p, RL = 150 W f = 5.0 MHz, VO = 2.0 Vp−p f = 5.0 MHz, VO = 2.0 Vp−p f = 10 MHz, VO = 2.0 Vp−p f = 5.0 MHz, VO = 2.0 Vp−p f = 1.0 MHz f = 1.0 MHz, Inverting f = 1.0 MHz, Non−Inverting Conditions Min Typ Max Unit MHz FREQUENCY DOMAIN PERFORMANCE AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 2.0 Vp−p AV = +2.0 AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, Vstep = 2.0 V AV = +2.0, Vstep = 2.0 V AV = +2.0, Vstep = 2.0 V (10%−90%) AV = +2.0, Vstep = 2.0 V 200 140 30 0.02 0.1 450 35 18 5 900 500 −55 −67 −57 35 58 4 15 15 GF0.1dB dG dP SR ts MHz % ° V/ms ns TIME DOMAIN RESPONSE tr tf tON tOFF THD HD2 HD3 IP3 SFDR eN iN ns ns ns dBc dBc dBc dBm dBc nV pA Hz Hz HARMONIC/NOISE PERFORMANCE 4. Applies to NCS2530 device only. http://onsemi.com 4 NCS2530, NCS2530A DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE VIO DVIO/D T IIB DIIB/DT VIH VIL Input Offset Voltage Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient Input High Voltage (Enable) (Note 5 and 6) Input Low Voltage (Enable) (Note 5 and 6) +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V (Note 5) +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V VCC − 1.5 V VCC − 3.5 V −5.0 −5.0 −4.0 "0.7 6.0 "2.0 "0.4 "40 "10 +5.0 +5.0 +4.0 mV mV/°C mA nA/°C V V INPUT CHARACTERISTICS VCM CMRR RIN CIN ROUT VO IO VS IS,ON IS,OFF Input Common Mode Voltage Range (Note 5) Common Mode Rejection Ratio Input Resistance Differential Input Capacitance (See Graph) +Input (Non−Inverting) −Input (Inverting) "3.0 50 "4.0 55 4.0 350 1.0 V dB MW W pF OUTPUT CHARACTERISTICS Output Resistance Output Voltage Swing Output Current Closed Loop Open Loop "3.0 "60 0.02 12 "3.5 "100 W V mA POWER SUPPLY Operating Voltage Supply Power Supply Current − Enabled (per amplifier) Power Supply Current − Disabled (per amplifier) (Note 6) Crosstalk PSRR Power Supply Rejection Ratio 5. Guaranteed by design and/or characterization. 6. Applies to NCS2530 device only. VO = 0 V VO = 0 V Channel to Channel, f = 5.0 MHz (See Graph) 50 0.6 10 1.1 0.35 60 60 2.0 0.5 V mA mA dB dB http://onsemi.com 5 NCS2530, NCS2530A AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol BW Characteristic Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth Differential Gain Differential Phase Slew Rate Settling Time 0.01% 0.1% Rise and Fall Time Turn−on Time (Note 7) Turn−off Time (Note 7) Total Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion Third−Order Intercept Spurious−Free Dynamic Range Input Referred Voltage Noise Input Referred Current Noise f = 5.0 MHz, VO = 1.0 Vp−p, RL = 150 W f = 5.0 MHz, VO = 1.0 Vp−p f = 5.0 MHz, VO = 1.0 Vp−p f = 10 MHz, VO = 1.0 Vp−p f = 5.0 MHz, VO = 1.0 Vp−p f = 1.0 MHz f = 1.0 MHz, Inverting f = 1.0 MHz, Non−Inverting Conditions Min Typ Max Unit MHz 180 130 15 0.02 0.1 350 40 18 8.0 900 500 −55 −67 −57 35 58 4.0 15 15 ns ns ns dBc dBc dBc dBm dBc nV pA Hz Hz MHz % ° V/ms ns FREQUENCY DOMAIN PERFORMANCE AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 1.0 Vp−p AV = +2.0 AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, RL = 150 W, f = 3.58 MHz AV = +2.0, Vstep = 1.0 V AV = +2.0, Vstep = 1.0 V AV = +2.0, Vstep = 1.0 V (10%−90%) AV = +2.0, Vstep = 1.0 V GF0.1dB dG dP SR ts TIME DOMAIN RESPONSE tr tf tON tOFF THD HD2 HD3 IP3 SFDR eN iN HARMONIC/NOISE PERFORMANCE 7. Applies to NCS2530 device only. http://onsemi.com 6 NCS2530, NCS2530A DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol VIO DVIO/DT IIB DIIB/DT VIH VIL Characteristic Input Offset Voltage Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient Input High Voltage (Enable) (Note 8 and 9) Input Low Voltage (Enable) (Note 8 and 9) Input Common Mode Voltage Range (Note 8) Common Mode Rejection Ratio Input Resistance Differential Input Capacitance Output Resistance Output Voltage Swing Output Current Operating Voltage Supply Power Supply Current − Enabled (per amplifier) Power Supply Current − Disabled (per amplifier) (Note 9) Crosstalk PSRR Power Supply Rejection Ratio VO = 0 V VO = 0 V Channel to Channel, f = 5.0 MHz (See Graph) 50 0.5 Closed Loop Open Loop "1.0 "40 (See Graph) +Input (Non−Inverting) −Input (Inverting) "1.3 50 "1.5 55 4.0 350 1.0 0.02 12 "1.4 "80 5.0 0.9 0.15 60 60 1.9 0.35 +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V (Note 8) +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V VCC − 1.5 V VCC − 3.5 V −5.0 −5.0 Conditions Min −4.0 Typ "0.5 6.0 "2.0 "0.4 "40 "10 +5.0 +5.0 Max +4.0 Unit mV mV/°C mA nA/°C V V DC PERFORMANCE INPUT CHARACTERISTICS VCM CMRR RIN CIN ROUT VO IO VS IS,ON IS,OFF V dB MW W pF W V mA V mA mA mA dB OUTPUT CHARACTERISTICS POWER SUPPLY 8. Guaranteed by design and/or characterization. 9. Applies to NCS2530 device only. VIN + − RL VOUT RF RF Figure 4. Typical Test Setup (AV = +2.0, RF = 1.8 kW or 1.2 kW or 1.0 kW, RL = 100 W) http://onsemi.com 7 NCS2530, NCS2530A 3 2 NORMAILIZED GAIN(dB) 1 0 −1 −2 −3 −4 −5 −6 10k 100k Gain = +2 RF = 1.2kW RL = 100W 6 NORMALIZED GAIN (dB) VS = ±2.5V VOUT = 0.5VPP VS = ±5V VOUT = 0.5VPP 3 0 −3 −6 −9 100M 1G −12 10k 100k VS = ±5V VOUT = 0.7VPP VS = ±2.5V VOUT = 0.7VPP VS = ±5V VOUT = 1.0VPP VS = ±2.5V VOUT = 1.0VPP 1M 10M FREQUENCY (Hz) 100M 1G Gain = +1 RF = 1.2kW RL = 100W VS = ±5V VOUT = 0.5VPP VS = ±2.5V VOUT = 0.5VPP VS = ±2.5V VOUT = 2.0VPP VS = ±5V VOUT = 2.0VPP VS = ±2.5V VOUT = 0.7VPP VS = ±2.5V VOUT = 0.7VPP 1M 10M FREQUENCY (Hz) Figure 5. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 6 NORMALIZED GAIN (dB) NORMAILIZED GAIN(dB) 3 0 −3 −6 −9 −12 10k VOUT = 2.0VPP RL = 100W 100k VS = ±2.5V AV = +2 VS = ±5V AV = +2 VS = ±2.5V AV = +4 100M 1G VS = ±5V AV = +4 6 3 0 −3 −6 −9 −12 10k Figure 6. Frequency Response: Gain (dB) vs. Frequency Av = +1.0 VS = ±5V AV = +4 VS = ±5V AV = +2 VS = ±5V AV = +1 VS = ±2.5V AV = +1 VS = ±2.5V AV = +4 VOUT = 0.5VPP RL = 100W 100k VS = ±2.5V AV = +4 100M 1G 1M 10M FREQUENCY (Hz) 1M 10M FREQUENCY (Hz) Figure 7. Large Signal Frequency Response Gain (dB) vs. Frequency VS = ±5V Figure 8. Small Signal Frequency Response Gain (dB) vs. Frequency VS = ±5V Figure 9. Small Signal Step Response Vertical: 500 mV/div Horizontal: 10 ns/div Figure 10. Large Signal Step Response Vertical: 500 mV/div Horizontal: 10 ns/div http://onsemi.com 8 NCS2530, NCS2530A −40 −45 DISTORTION (dB) −50 −55 −60 −65 −70 −75 −80 10M 100M FREQUENCY (Hz) 1G HD3 HD2 THD VS = ±5V VOUT = 2VPP RL = 150W −40 −45 DISTORTION (dB) −50 THD −55 −60 −65 −70 HD3 VS = ±5V f = 5MHz RL = 150W HD2 0.5 1 1.5 2 2.5 VOUT (VPP) 3 3.5 4 Figure 11. THD, HD2, HD3 vs. Frequency Figure 12. THD, HD2, HD3 vs. Output Voltage 7 VOLTAGE NOISE (nV/pHz) 6 5 4 3 2 1 0 1k 10k 100k FREQUENCY (Hz) 1M ±5.0V CMRR (dB) ±2.5V −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 10k 100k 1M FREQUENCY (Hz) 10M 100M VS = ±5V Figure 13. Input Referred Noise vs. Frequency Figure 14. CMRR vs. Frequency 0 DIFFERENTIAL GAIN (%) −10 −20 PSRR(dB) +5.0V −30 −40 −50 −60 −70 10k 100k 1M 10M FREQUENCY (Hz) 100M +2.5 −2.5V −5.0V 0.06 0.04 0.02 0 VS = ±5V RL = 150W 4.43MHz 3.58MHz −0.02 10MHz 20MHz −0.6 −0.4 −0.2 0 0.2 0.4 OFFSET VOLTAGE (V) 0.6 0.8 −0.04 −0.06 −0.8 Figure 15. PSRR vs. Frequency Figure 16. Differential Gain http://onsemi.com 9 NCS2530, NCS2530A 0.06 20MHz DIFFERENTIAL PHASE (°) 0.04 0.02 0 4.43MHz 3.58MHz VS = ±5V RL = 150W −0.6 0.2 0.4 −0.4 −0.2 0 OFFSET VOLTAGE (V) 0.6 0.8 10MHz CURRENT (mA) 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 4 5 7 9 6 8 POWER SUPPLY VOLTAGE (V) 10 11 −40°C 85°C 25°C −0.02 −0.04 −0.06 −0.8 Figure 17. Differential Phase Figure 18. Supply Current per Amplifier vs. Power Supply vs. Temperature (Enabled) .14 OUTPUT VOLTAGE (VPP) .12 CURRENT (mA) .1 .08 .06 .04 .02 0 4 5 7 9 6 8 POWER SUPPLY VOLTAGE (V) 10 11 85°C 25°C −40°C 8 7 6 5 4 3 2 85°C −40°C 25°C 4 5 6 7 9 8 SUPPLY VOLTAGE (V) 10 11 Figure 19. Supply Current per Amplifier vs. Power Supply vs. Temperature (Disabled) (NCS2530 Only) 9 8 OUTPUT VOLTAGE (VPP) 7 6 5 4 3 2 1 0 1 10 AV = +2 f = 1MHz 100 1000 LOAD RESISTANCE (W) 10k VS = ±2.5V OUTPUT RESISTANCE (W) VS = ±5V Figure 20. Output Voltage Swing vs. Supply Voltage 100 VS = ±5V 10 1 0.1 0.01 10k 100k 10M 1M FREQUENCY (Hz) 100M Figure 21. Output Voltage Swing vs. Load Resistance Figure 22. Output Impedance vs. Frequency http://onsemi.com 10 NCS2530, NCS2530A 18 12 6 GAIN (dB) 0 −6 −12 −18 −24 −30 1M VS = ±5V RF = 1.2kW RL = 100W Gain= +2 100pF TRANSIMPEDANCE (W) 10M 1M VS = ±5V 100k 10k 1k 100 10 47pF 10pF 10M 100M FREQUENCY (Hz) 1G 1 10k 100k 10M 1M 100M FREQUENCY (Hz) 1G 10G Figure 23. Frequency Response vs. Capacitive Load VS = ±5V EN OUT Figure 24. Transimpedance (ROL) vs. Frequency VS = ±5V EN OUT Figure 25. Turn ON Time Delay Vertical: 10 mV/Div, Horizontal: 4 ns/Div (Output Signal: Square Wave, 10 MHz, 2 Vpp) (NCS2530 Only) 0 NORMAILIZED GAIN(dB) −10 CROSSTALK (dBc) −20 −30 −40 −50 −60 −70 10M Channel 3 Channel 1 Gain = +2 VS = ±5V 2 1 0 −1 −2 −3 −4 −5 100M FREQUENCY (Hz) 1G Figure 26. Turn OFF Time Delay Vertical: 10 mV/Div, Horizontal: 4 ns/Div (Output Signal: Square Wave, 10 MHz, 2 Vpp) (NCS2530 Only) 2 3 1 Gain = +2 VS = ±5V 100k 1M 10M FREQUENCY (Hz) 100M 1G −6 10k Figure 27. Crosstalk (dBc) vs. Frequency (Crosstalk measured on Channel 2 with input signal on Channel 1 and 3) Figure 28. Channel Matching Gain (dB) vs. Frequency http://onsemi.com 11 NCS2530, NCS2530A General Design Considerations Printed Circuit Board Layout Techniques The current feedback amplifier is optimized for use in high performance video and data acquisition systems. For current feedback architecture, its closed−loop bandwidth depends on the value of the feedback resistor. The closed−loop bandwidth is not a strong function of gain, as is for a voltage feedback amplifier, as shown in Figure 29. 10 5 0 −5 RF = 1 kW RF = 1.2 kW RF = 1.8 kW AV = +2 VCC = +5 V VEE = −5 V 0.1 1.0 10 100 1000 10000 Proper high speed PCB design rules should be used for all wideband amplifiers as the PCB parasitics can affect the overall performance. Most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. A space (3/16″ is plenty) should be left around the signal lines to minimize coupling. Also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. Line lengths less than 1/4″ are recommended. Video Performance GAIN (dB) −10 −15 This device designed to provide good performance with NTSC, PAL, and HDTV video signals. Best performance is obtained with back terminated loads as performance is degraded as the load is increased. The back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage. Video Line Driver −20 0.01 FREQUENCY (MHz) Figure 29. Frequency Response vs. RF The −3.0 dB bandwidth is, to some extent, dependent on the power supply voltages. By using lower power supplies, the bandwidth is reduced, because the internal capacitance increases. Smaller values of feedback resistor can be used at lower supply voltages, to compensate for this affect. Feedback and Gain Resistor Selection for Optimum Frequency Response NCS2530 can be used in video line driver applications. Figure 30 shows a typical schematic for a video driver. In some applications, two or more video loads have to be driven simultaneously as shown in Figure 31. Figure 32 shows the typical performance of the op amp with single and triple video load. VIN Z = 75 W 75 W + − RF RG 75 W Z = 75 W 75 W VOUT A current feedback operational amplifier’s key advantage is the ability to maintain optimum frequency response independent of gain by using appropriate values for the feedback resistor. To obtain a very flat gain response, the feedback resistor tolerance should be considered as well. Resistor tolerance of 1% should be used for optimum flatness. Normally, lowering RF resistor from its recommended value will peak the frequency response and extend the bandwidth while increasing the value of RF resistor will cause the frequency response to roll off faster. Reducing the value of RF resistor too far below its recommended value will cause overshoot, ringing, and eventually oscillation. Since each application is slightly different, it is worth some experimentation to find the optimal RF for a given circuit. A value of the feedback resistor that produces X0.1 dB of peaking is the best compromise between stability and maximal bandwidth. It is not recommended to use a current feedback amplifier with the output shorted directly to the inverting input. Figure 30. Video Driver Schematic 75 W Z = 75 W 75 W VIN Z = 75 W 75 W + − RF RG 75 W Z = 75 W 75 W VOUT3 75 W Z = 75 W 75 W VOUT2 VOUT1 Figure 31. Video Driver Schematic for Three Video Loads http://onsemi.com 12 NCS2530, NCS2530A 3 NORMALIZED GAIN (dB) 0 −3 TRIPLE LOAD −6 −9 Gain = +2 V S = ±5 V RF = 1.2 kW RG = 1.2 kW 10k 100k 1M 10M 100M 1G 10G FREQUENCY (Hz) SINGLE LOAD −12 series resistors. Keep these resistor values as low as possible since high values degrade both noise performance and frequency response. Under closed−loop operation, the ESD diodes have no effect on circuit performance. However, under certain conditions the ESD diodes will be evident. If the device is driven into a slewing condition, the ESD diodes will clamp large differential voltages until the feedback loop restores closed−loop operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct. Note: Human Body Model for +IN and –IN pins are rated at 0.8 kV while all other pins are rated at 2.0 kV. VCC Figure 32. Frequency Response with Various Loads ESD Protection External Pin Internal Circuitry All device pins have limited ESD protection using internal diodes to power supplies as specified in the attributes table (See Figure 33). These diodes provide moderate protection to input overdrive voltages above the supplies. The ESD diodes can support high input currents with current limiting VEE Figure 33. Internal ESD Protection ORDERING INFORMATION Device NCS2530ADG NCS2530ADR2G NCS2530DTBG NCS2530DTBR2G Package SOIC−14 (Pb−Free) SOIC−14 (Pb−Free) TSSOP−16* TSSOP−16* Shipping † 55 Units / Rail 2500 / Tape & Reel 96 Units / Rail 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 13 NCS2530, NCS2530A PACKAGE DIMENSIONS SOIC−14 CASE 751A−03 ISSUE H − A− 14 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. − B− P 7 PL 0.25 (0.010) M B M 1 7 G C −T− SEATING PLANE R X 45 _ F D 14 PL 0.25 (0.010) K M M S J TB A S SOLDERING FOOTPRINT* 7X DIM A B C D F G J K M P R MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 7.04 1 0.58 14X 14X 1.52 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 14 NCS2530, NCS2530A PACKAGE DIMENSIONS TSSOP−16 CASE 948F−01 ISSUE B 16X K REF 0.10 (0.004) 0.15 (0.006) T U S M TU S V S K K1 2X L/2 16 9 J1 B − U− SECTION N−N J N L PIN 1 IDENT. 1 8 0.25 (0.010) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ 0.15 (0.006) T U S A −V− N F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D G H DETAIL E SOLDERING FOOTPRINT* 7.06 1 0.36 16X 16X 1.26 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 15 ÉÉÉ ÇÇÇ ÉÉÉ ÇÇÇ −W− 0.65 PITCH DIMENSIONS: MILLIMETERS NCS2530, NCS2530A ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 16 NCS2530/D