NCV1413BDR2

MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps. The MC1413, B with a 2.7 kW series input resistor is well suited for systems utilizing a 5.0 V TTL or CMOS Logic. Features http://onsemi.com 16 1 PDIP−16 P SUFFIX CASE 648 • Pb−Free Packages are Available* • NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes 1/7 MC1413, B 2.7 k 5.0 k 3.0 k Pin 9 16 1 SOIC−16 D SUFFIX CASE 751B ORDERING INFORMATION Device MC1413D MC1413DG MC1413DR2 MC1413DR2G Package SOIC−16 SOIC−16 (Pb−Free) SOIC−16 SOIC−16 (Pb−Free) PDIP−16 PDIP−16 (Pb−Free) SOIC−16 SOIC−16 (Pb−Free) SOIC−16 SOIC−16 (Pb−Free) PDIP−16 PDIP−16 (Pb−Free) SOIC−16 SOIC−16 (Pb−Free) Shipping† 48 Units/Rail 48 Units/Tube 2500 Tape & Reel 2500 Tape & Reel 25 Units/Rail 25 Units/Rail 48 Units/Rail 48 Units/Rail 2500 Tape & Reel 2500 Tape & Reel 25 Units/Rail 25 Units/Rail 2500 Tape & Reel 2500 Tape & Reel Figure 1. Representative Schematic Diagram MC1413P MC1413PG 1 2 3 4 5 6 7 8 16 15 MC1413BD MC1413BDG MC1413BDR2 14 13 12 11 10 9 MC1413BDR2G MC1413BP MC1413BPG NCV1413BDR2 NCV1413BDR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (Top View) Figure 2. PIN CONNECTIONS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DEVICE MARKING INFORMATION See general marking information in the device marking section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2006 1 July, 2006 − Rev. 8 Publication Order Number: MC1413/D MC1413, MC1413B, NCV1413B MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.) Rating Output Voltage Input Voltage Collector Current − Continuous Base Current − Continuous Operating Ambient Temperature Range MC1413 MC1413B NCV1413B Storage Temperature Range Junction Temperature Thermal Resistance, Junction−to−Ambient Case 648, P Suffix Case 751B, D Suffix Thermal Resistance, Junction−to−Case Case 648, P Suffix Case 751B, D Suffix Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) Symbol VO VI IC IB TA −20 to +85 −40 to +85 −40 to +125 Tstg TJ RqJA 67 100 RqJC 22 20 ESD 2000 400 1500 V °C/W −55 to +150 150 °C °C °C/W Value 50 30 500 25 Unit V V mA mA °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 2 MC1413, MC1413B, NCV1413B ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Output Leakage Current (VO = 50 V, TA = +85°C) (VO = 50 V, TA = +25°C) Collector−Emitter Saturation Voltage (IC = 350 mA, IB = 500 mA) (IC = 200 mA, IB = 350 mA) (IC = 100 mA, IB = 250 mA) Input Current − On Condition (VI = 3.85 V) Input Voltage − On Condition (VCE = 2.0 V, IC = 200 mA) (VCE = 2.0 V, IC = 250 mA) (VCE = 2.0 V, IC = 300 mA) Input Current − Off Condition (IC = 500 mA, TA = 85°C) DC Current Gain (VCE = 2.0 V, IC = 350 mA) Input Capacitance Turn−On Delay Time (50% EI to 50% EO) Turn−Off Delay Time (50% EI to 50% EO) Clamp Diode Leakage Current (VR = 50 V) Clamp Diode Forward Voltage (IF = 350 mA) NOTE: TA = +25°C TA = +85°C All Types All Types VCE(sat) All Types All Types All Types II(on) MC1413, B VI(on) MC1413, B MC1413, B MC1413, B All Types II(off) hFE CI ton toff IR VF − − − 50 1000 − − − − − − − − − 100 − 15 0.25 0.25 − − 1.5 2.4 2.7 3.0 − − 30 1.0 1.0 50 100 2.0 mA − pF ms ms mA V − 0.93 1.35 V − − − 1.1 0.95 0.85 1.6 1.3 1.1 mA Symbol ICEX − − − − 100 50 V Min Typ Max Unit mA NCV1413B Tlow = −40°C, Thigh = +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring site and change control. http://onsemi.com 3 MC1413, MC1413B, NCV1413B TYPICAL PERFORMANCE CURVES − TA = 25°C 400 I O , OUTPUT CURRENT (mA) I O , OUTPUT CURRENT (mA) 400 300 MC1413, B 200 300 All Types 200 100 100 0 0 1.0 2.0 3.0 4.0 5.0 8.0 9.0 10 11 12 0 0 50 100 150 200 250 300 350 400 II, INPUT CURRENT (mA) VI, INPUT VOLTAGE (V) Figure 3. Output Current versus Input Voltage Figure 4. Output Current versus Input Current 800 IC , COLLECTOR CURRENT (mA) 700 600 500 400 300 200 All Types 100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VCE(sat), SATURATION VOLTAGE (V) 1 Output Conducting at a Time PIN 16 PIN 10 PIN 13 I I, INPUT CURRENT (mA) 2.5 2.0 Maximum 1.5 Typical 1.0 0.5 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VI, INPUT VOLTAGE (V) Figure 5. Typical Output Characteristics Figure 6. Input Characteristics − MC1413, B 1000 I C, COLLECTOR CURRENT (mA) NUMBER OF DRIVERS USED 700 500 1 2 3 300 4 200 5 6 7 100 10 20 30 % DUTY CYCLE 50 70 100 Figure 7. Maximum Collector Current versus Duty Cycle (and Number of Drivers in Use) http://onsemi.com 4 MC1413, MC1413B, NCV1413B MARKING DIAGRAMS PDIP−16 P SUFFIX CASE 648 16 MC1413P ULN2003A AWLYYWWG 1 1 16 MC1413BP ULQ2003A AWLYYWWG SOIC−16 D SUFFIX CASE 751B 16 MC1413DG AWLYWW 1 1 16 MC1413BDG AWLYWW 1 16 NCV1413BDG AWLYWW A WL YY, Y WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package http://onsemi.com 5 MC1413, MC1413B, NCV1413B PACKAGE DIMENSIONS PDIP−16 P SUFFIX CASE 648−08 ISSUE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. −A− 16 9 B 1 8 F S C L −T− H G D 16 PL SEATING PLANE K J TA M M 0.25 (0.010) M DIM A B C D F G H J K L M S INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01 http://onsemi.com 6 MC1413, MC1413B, NCV1413B PACKAGE DIMENSIONS SOIC−16 D SUFFIX CASE 751B−05 ISSUE J −A− 16 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 −B− 1 8 P 8 PL 0.25 (0.010) M B S G F K C −T− SEATING PLANE R X 45 _ M D 16 PL M J 0.25 (0.010) TB S A S http://onsemi.com 7 MC1413, MC1413B, NCV1413B ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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