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NCV321SN3T1G

NCV321SN3T1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TSOP5_3X1.5MM

  • 描述:

    NCV321SN3T1G

  • 数据手册
  • 价格&库存
NCV321SN3T1G 数据手册
Single, Dual, Quad Low-Voltage, Rail-to-Rail Operational Amplifiers LMV321, NCV321, LMV358, LMV324 The LMV321, LMV321I, NCV321, LMV358/LMV358I and LMV324 are CMOS single, dual, and quad low voltage operational amplifiers with rail−to−rail output swing. These amplifiers are a cost−effective solution for applications where low power consumption and space saving packages are critical. Specification tables are provided for operation from power supply voltages at 2.7 V and 5 V. Rail−to−Rail operation provides improved signal−to−noise preformance. Ultra low quiescent current makes this series of amplifiers ideal for portable, battery operated equipment. The common mode input range includes ground making the device useful for low−side current−shunt measurements. The ultra small packages allow for placement on the PCB in close proximity to the signal source thereby reducing noise pickup. • 5 1 Operation from 2.7 V to 5.0 V Single−Sided Power Supply LMV321 Single Available in Ultra Small 5 Pin SC70 Package No Output Crossover Distortion Rail−to−Rail Output Low Quiescent Current: LMV358 Dual − 220 mA, Max per Channel No Output Phase−Reversal from Overdriven Input NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 TSOP−5 CASE 483 SC−70 CASE 419A 1 Micro8 CASE 846A 8 8 1 Features • • • • • • • www.onsemi.com SOIC−8 CASE 751 1 UDFN8 CASE 517AJ 1 1 SOIC−14 CASE 751A TSSOP−14 CASE 948G ORDERING AND MARKING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. Typical Applications • Notebook Computers and PDA’s • Portable Battery−Operated Instruments • Active Filters © Semiconductor Components Industries, LLC, 2015 January, 2021 − Rev. 16 1 Publication Order Number: LMV321/D LMV321, NCV321, LMV358, LMV324 MARKING DIAGRAMS SC−70 Micro8 TSOP−5 8 5 V358 AYWG G 3ACAYWG G AAC MG G 1 AAC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1 3AC = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) V358 = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) SOIC−8 UDFN8 8 V358 ALYW G AC M G 1 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package V358 A L Y W G AC = Specific Device Code M = Date Code G = Pb−Free Package SOIC−14 TSSOP−14 14 14 LMV 324 ALYW LMV324 AWLYWWG 1 1 LMV324 = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week G = Pb−Free Package LMV324 = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package PIN CONNECTIONS 2 V− 3 + − −IN IN A− 4 IN A+ 2 7 OUT B 6 IN B− 3 B + − OUTPUT V− A − + 4 (Top View) 5 IN B+ 1 13 IN D− IN A− 2 3 12 IN D+ IN A+ 3 12 IN D+ 4 11 V− V+ 4 11 V− 5 10 IN C+ IN B+ 5 10 IN C+ 6 9 IN B− 6 IN A− 2 IN A+ V+ IN B− OUT B (Top View) A − + B 7 D + − C (Top View) www.onsemi.com 2 TSSOP−14 OUT A 1 IN B+ SOIC−14 14 OUT D OUT A + − V+ +IN 8 V+ 1 − + UDFN8/Micro8/SOIC−8 OUT A 5 8 IN C− OUT C OUT B 7 A − + + − 1 B D + − − + SC70−5/TSOP−5 C (Top View) 14 OUT D 13 IN D− 9 IN C− 8 OUT C LMV321, NCV321, LMV358, LMV324 MAXIMUM RATINGS Symbol VS Rating Supply Voltage (Operating Range VS = 2.7 V to 5.5 V) Value Unit 5.5 V VIDR Input Differential Voltage $Supply Voltage V VICR Input Common Mode Voltage Range −0.5 to (V+) + 0.5 V 10 mA Maximum Input Current tSo Output Short Circuit (Note 1) TJ Maximum Junction Temperature TA Operating Ambient Temperature Range qJA Thermal Resistance: Tstg Continuous LMV321, LMV358, LMV324 LMV321I, LMV358I NCV321 (Note 2) °C −40 to 85 −40 to 125 −40 to 125 °C °C °C °C/W SC−70 280 Micro8 238 TSOP−5 333 UDFN8 (1.2 mm x 1.8 mm x 0.5 mm) 350 SOIC−8 212 SOIC−14 156 TSSOP−14 190 Storage Temperature Mounting Temperature (Infrared or Convection −20 sec) VESD 150 ESD Tolerance (Note 3) LMV321, LMV321I, NCV321 Machine Model Human Body Model LMV358/358I/324 Machine Model Human Body Mode −65 to 150 °C 260 °C V 100 1000 100 2000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Continuous short−circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability. Shorting output to either V+ or V− will adversely affect reliability. 2. NCV prefix is qualified for automotive usage. 3. Human Body Model, applicable std. MIL−STD−883, Method 3015.7 Machine Model, applicable std. JESD22−A115−A (ESD MM std. of JEDEC) Field−Induced Charge−Device Model, applicable std. JESD22−C101−C (ESD FICDM std. of JEDEC). www.onsemi.com 3 LMV321, NCV321, LMV358, LMV324 2.7 V DC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 2.7 V, RL = 1 MW, V− = 0 V, VO = V+/2) Parameter Typ Max Unit TA = TLow to THigh (Note 4) 1.7 9 mV ICVOS TA = TLow to THigh (Note 4) 5 mV/°C Input Bias Current IB TA = TLow to THigh (Note 4)
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