NCV8535

NCV8535 Ultra High Accuracy, Low Iq, 500 mA Low Dropout Regulator with Enable The NCV8535 is a high performance, low dropout regulator. With accuracy of ±0.9% over line and load and ultra−low quiescent current and noise it encompasses all of the necessary features required by today’s consumer electronics. This unique device is guaranteed to be stable without a minimum load current requirement and stable with any type of capacitor as small as 1.0 mF. The NCV8535 also comes equipped with sense and noise reduction pins to increase the overall utility of the device. The NCV8535 offers reverse bias protection. Features http://onsemi.com DFN10, 3x3 MN SUFFIX CASE 485C • • • • • • • • • • • • • • • • • • • • • High Accuracy Over Line and Load (±0.9% at 25°C) Ultra−Low Dropout Voltage at Full Load (260 mV typ.) No Minimum Output Current Required for Stability Low Noise (31 mVrms w/10 nF Cnr and 51 mVrms w/out Cnr) Low Shutdown Current (0.07 mA) Reverse Bias Protected 2.9 V to 12 V Supply Range Thermal Shutdown Protection Current Limitation Requires Only 1.0 mF Output Capacitance for Stability Stable with Any Type of Capacitor (including MLCC) Available in 1.5 V, 1.8 V, 1.9 V, 2.5 V, 2.8 V, 2.85 V, 3.0 V, 3.3 V, 3.5 V, 5.0 V and Adjustable Output Voltages These are Pb−Free Devices PCMCIA Card Cellular Phones Camcoders and Cameras Networking Systems, DSL/Cable Modems Cable Set−Top Box MP3/CD Players DSP Supply Displays and Monitors MARKING DIAGRAM 1 V8535 xxx ALYWG G Fixed Version Pin 1, 2. Vout 3. Sense 4. GND 5, 6. NC 7. NR 8. SD 9, 10. Vin Adj Version Pin 1, 2. Vout 3. Adj 4. GND 5, 6. NC 7. NR 8. SD 9, 10. Vin V8535= Specific Device Code xxx = ADJ, 150, 180, 190, 250, 280, 285, 300, 330, 350, 500 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Applications ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 21 of this data sheet. © Semiconductor Components Industries, LLC, 2010 January, 2010 − Rev. 2 1 Publication Order Number: NCV8535/D NCV8535 7 NR Cnr 10 nF (Optional) SENSE 9 Vin Cin 1.0 mF + 10 3 2 1 Cout 1.0 mF Vout + IN IN SD 8 ON OUT OUT GND 4 OFF Figure 1. Typical Fixed Version Application Schematic 7 NR Cnr 10 nF (Optional) OUT 2 1 3 R1 CADJ 68 pF Cout 1.0 mF + Vout 9 Vin Cin 1.0 mF + 10 IN IN SD 8 ON OUT ADJ GND 4 R2 OFF Figure 2. Typical Adjustable Version Application Schematic http://onsemi.com 2 NCV8535 Figure 3. Block Diagram, Fixed Output Version Figure 4. Block Diagram, Adjustable Output Version http://onsemi.com 3 NCV8535 PIN FUNCTION DESCRIPTION Fixed Version Pin No. 1, 2 3 4 7 8 9, 10 5, 6 EPAD Pin Name Vout SENSE GND NR SD Vin NC EPAD Description Regulated output voltage. Bypass to ground with Cout w 1.0 mF. For output voltage sensing, connect to Pins 1 and 2. Power Supply Ground Noise Reduction Pin. This is an optional pin used to further reduce noise. Shutdown pin. When not in use, this pin should be connected to the input pin. Power Supply Input Voltage Not Connected Exposed thermal pad should be connected to ground. Adjustable Version 1, 2 3 4 7 8 9, 10 5, 6 EPAD Vout Adj GND NR SD Vin NC EPAD Regulated output voltage. Bypass to ground with Cout w 1.0 mF. Adjustable pin; reference voltage = 1.25 V. Power Supply Ground Noise Reduction Pin. This is an optional pin used to further reduce noise. Shutdown pin. When not in use, this pin should be connected to the input pin. Power Supply Input Voltage Not Connected Exposed thermal pad should be connected to ground. MAXIMUM RATINGS Rating Input Voltage Output Voltage Shutdown Pin Voltage Junction Temperature Range Storage Temperature Range Symbol Vin Vout Vsh TJ Tstg Value −0.3 to +16 −0.3 to Vin +0.3 or 10 V* −0.3 to +16 −40 to +150 −55 to +150 Unit V V V °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114) Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115) Charged Device Model (CDM) tested per EIA/JESD22−C101 *Which ever is less. Reverse bias protection feature valid only if Vout − Vin ≤ 7 V. THERMAL CHARACTERISTICS Test Conditions (Typical Value) Characteristic Junction−to−Air, qJA Junction−to−Pin, yJL2 Min Pad Board (Note 1) 215 55 1, Pad Board (Note 1) 66 17 Unit °C/W °C/W 1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions are under natural convection or zero air flow. http://onsemi.com 4 NCV8535 ELECTRICAL CHARACTERISTICS – 5.0 V (Vout = 5.0 V typical, Vin = 5.4 V, TA = −40°C to +85°C, unless otherwise noted, Note 2.) Characteristic Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Line Regulation Vin = 5.4 V to 12 V, Iload = 0.1 mA Load Regulation Vin = 5.4 V, Iload = 0.1 mA to 500 mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA Peak Output Current (See Figure 16) Short Output Current (See Figure 16) Thermal Shutdown Ground Current In Regulation Iload = 500 mA (Note 3) Iload = 300 mA (Note 3) Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 4.9 V, Iload = 0.1 mA In Shutdown SD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Shutdown Threshold Voltage ON Threshold Voltage OFF SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 5.0 V) ISD IOSD IOUTR IGNDsh Vnoise Symbol Vout Vout Vout LineReg LoadReg VDO Min −0.9% 4.955 −1.4% 4.930 −1.5% 4.925 Typ 5.0 5.0 5.0 0.04 0.04 Max +0.9% 5.045 +1.4% 5.070 +1.5% 5.075 Unit V V V mV/V mV/mA mV 340 230 110 10 500 700 830 930 160 Ipk Isc TJ IGND mA mA °C 9.0 4.6 0.8 − − 0.07 93 58 2.0 0.07 0.07 10 14 7.5 2.5 190 500 1.0 mA mA mA mA mVrms mVrms V V mA mA mA 0.4 1.0 1.0 2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 3. TA must be greater than 0°C. http://onsemi.com 5 NCV8535 ELECTRICAL CHARACTERISTICS – 3.5 V (Vout = 3.5 V typical, Vin = 3.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 4.) Characteristic Output Voltage (Accuracy) Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C Output Voltage (Accuracy) Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Output Voltage (Accuracy) Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Line Regulation Vin = 3.9 V to 12 V, Iload = 0.1 mA Load Regulation Vin = 3.9 V, Iload = 0.1 mA to 500 mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA Peak Output Current (See Figure 16) Short Output Current (See Figure 16) Thermal Shutdown Ground Current In Regulation Iload = 500 mA (Note 5) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 3.4 V, Iload = 0.1 mA In Shutdown SD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Shutdown Threshold Voltage ON Threshold Voltage OFF SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.5 V) ISD IOSD IOUTR IGNDsh Vnoise Symbol Vout Vout Vout LineReg LoadReg VDO Min −0.9% 3.469 −1.4% 3.451 −1.5% 3.448 Typ 3.5 3.5 3.5 0.04 0.04 Max +0.9% 3.532 +1.4% 3.549 +1.5% 3.553 Unit V V V mV/V mV/mA mV 340 230 110 10 500 700 800 900 160 Ipk Isc TJ IGND mA mA °C 9.0 4.6 0.8 − − 0.07 68 47 2.0 0.07 0.07 10 14 7.5 2.5 190 500 1.0 mA mA mA mA mVrms mVrms V V mA mA mA 0.4 1.0 1.0 4. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. TA must be greater than 0°C. http://onsemi.com 6 NCV8535 ELECTRICAL CHARACTERISTICS – 3.3 V (Vout = 3.3 V typical, Vin = 3.7 V, TA = −40°C to +85°C, unless otherwise noted, Note 6.) Characteristic Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 25°C Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Line Regulation Vin = 3.7 V to 12 V, Iload = 0.1 mA Load Regulation Vin = 3.7 V, Iload = 0.1 mA to 500 mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA Peak Output Current (See Figure 16) Short Output Current (See Figure 16) Thermal Shutdown Ground Current In Regulation Iload = 500 mA (Note 7) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 3.2 V, Iload = 0.1 mA In Shutdown SD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Shutdown Threshold Voltage ON Threshold Voltage OFF SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.3 V) ISD IOSD IOUTR IGNDsh Vnoise Symbol Vout Vout Vout LineReg LoadReg VDO Min −0.9% 3.270 −1.4% 3.254 −1.5% 3.250 Typ 3.3 3.3 3.3 0.04 0.04 Max +0.9% 3.330 +1.4% 3.346 +1.5% 3.350 Unit V V V mV/V mV/mA mV 340 230 110 10 500 700 800 900 160 Ipk Isc TJ IGND mA mA °C 9.0 4.6 0.8 − − 0.07 69 46 2.0 0.07 0.07 10 14 7.5 2.5 190 500 1.0 mA mA mA mA mVrms mVrms V V mA mA mA 0.4 1.0 1.0 6. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 7. TA must be greater than 0°C. http://onsemi.com 7 NCV8535 ELECTRICAL CHARACTERISTICS – 3.0 V (Vout = 3.0 V typical, Vin = 3.4 V, TA = −40°C to +85°C, unless otherwise noted, Note 8.) Characteristic Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Line Regulation Vin = 3.4 V to 12 V, Iload = 0.1 mA Load Regulation Vin = 3.4 V, Iload = 0.1 mA to 500 mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA Peak Output Current (See Figure 16) Short Output Current (See Figure 16) Thermal Shutdown Ground Current In Regulation Iload = 500 mA (Note 9) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 2.9 V, Iload = 0.1 mA In Shutdown SD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Shutdown Threshold Voltage ON Threshold Voltage OFF SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.0 V) ISD IOSD IOUTR IGNDsh Vnoise Symbol Vout Vout Vout LineReg LoadReg VDO Min −0.9% 2.973 −1.4% 2.958 −1.5% 2.955 Typ 3.0 3.0 3.0 0.04 0.04 Max +0.9% 3.027 +1.4% 3.042 +1.5% 3.045 Unit V V V mV/V mV/mA mV 340 230 110 10 500 700 800 900 160 Ipk Isc TJ IGND mA mA °C mA 9.0 4.6 0.8 − − 0.07 56 37 2.0 0.07 0.07 10 14 7.5 2.5 190 500 1.0 mA mA mA mVrms mVrms V V mA mA mA 0.4 1.0 1.0 8. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. TA must be greater than 0°C. http://onsemi.com 8 NCV8535 ELECTRICAL CHARACTERISTICS − 2.85 V (Vout = 2.85 V typical, Vin = 3.25 V, TA = −40°C to +85°C, unless otherwise noted, Note 10) Characteristic Output Voltage (Accuracy) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 25°C Output Voltage (Accuracy) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Output Voltage (Accuracy) (Note 11) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Line Regulation Vin = 3.25 V to 12 V, Iload = 0.1 mA Load Regulation Vin = 3.25 V, Iload = 0.1 mA to 500 mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1mA Peak Output Current (See Figure 16) Short Output Current (See Figure 16) Thermal Shutdown Ground Current In Regulation Iload = 500 mA (Note 12) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 2.75 V, Iload = 0.1 mA In Shutdown SD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Shutdown Threshold Voltage ON Threshold Voltage OFF SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.85 V) ISD IOSD IOUTR IGNDsh Vnoise Symbol Vout Vout Vout LineReg LoadReg VDO Min −0.9% 2.824 −1.4% 2.810 −1.5% 2.807 Typ 2.85 2.85 2.85 0.04 0.04 Max +0.9% 2.876 +1.4% 2.890 +1.5% 2.893 Unit V V V mV/V mV/mA mV 340 230 110 10 500 700 800 900 160 Ipk Isc TJ IGND mA mA °C 9.0 4.6 0.8 − − 0.07 61 40 2.0 0.07 0.07 10 14 7.5 2.5 190 500 1.0 mA mA mA mA mVrms mVrms V V mA mA mA 0.4 1.0 1.0 10. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. For output current capability for TA < 0°C, please refer to Figure 18. 12. TA must be greater than 0°C. http://onsemi.com 9 NCV8535 ELECTRICAL CHARACTERISTICS − 2.8 V (Vout = 2.8 V typical, Vin = 3.2 V, TA = −40°C to +85°C, unless otherwise noted, Note 13.) Characteristic Output Voltage (Accuracy) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = 25°C Output Voltage (Accuracy) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Output Voltage (Accuracy) (Note 14) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Line Regulation Vin = 3.2 V to 12 V, Iload = 0.1 mA Load Regulation Vin = 3.2 V, Iload = 0.1 mA to 500 mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1mA Peak Output Current (See Figure 16) Short Output Current (See Figure 16) Thermal Shutdown Ground Current In Regulation Iload = 500 mA (Note 15) Iload = 300 mA (Note 15) Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 2.7 V, Iload = 0.1 mA In Shutdown SD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Shutdown Threshold Voltage ON Threshold Voltage OFF SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.8 V) ISD IOSD IOUTR IGNDsh Vnoise Symbol Vout Vout Vout LineReg LoadReg VDO Min −0.9% 2.774 −1.4% 2.760 −1.5% 2.758 Typ 2.8 2.8 2.8 0.04 0.04 Max +0.9% 2.826 +1.4% 2.840 +1.5% 2.842 Unit V V V mV/V mV/mA mV 340 230 110 10 500 700 800 900 160 Ipk Isc TJ IGND mA mA °C 9.0 4.6 0.8 − − 0.07 52 36 2.0 0.07 0.07 10 14 7.5 2.5 190 500 1.0 mA mA mA mA mVrms mVrms V V mA mA mA 0.4 1.0 1.0 13. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 14. For output current capability for TA < 0°C, please refer to Figure 19. 15. TA must be greater than 0°C. http://onsemi.com 10 NCV8535 ELECTRICAL CHARACTERISTICS − 2.5 V (Vout = 2.5 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 16.) Characteristic Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Output Voltage (Accuracy), (Note 17) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA Dropout Voltage (See App Note) Iload = 500 mA (Note 18) Iload = 300 mA (Note 18) Iload = 50 mA Iload = 0.1mA Peak Output Current (See Figure 16) Short Output Current (See Figure 16) Thermal Shutdown Ground Current In Regulation Iload = 500 mA (Note 18) Iload = 300 mA (Note 18) Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 2.4 V, Iload = 0.1 mA In Shutdown SD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Shutdown Threshold Voltage ON Threshold Voltage OFF SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.5 V) ISD IOSD IOUTR IGNDsh Vnoise 0.07 56 35 2.0 0.07 0.07 10 Symbol Vout Vout Vout LineReg LoadReg VDO Min −0.9% 2.477 −1.4% 2.465 −1.5% 2.462 Typ 2.5 2.5 2.5 0.04 0.04 Max +0.9% 2.523 +1.4% 2.535 +1.5% 2.538 Unit V V V mV/V mV/mA mV 340 230 110 10 500 700 800 900 160 Ipk Isc TJ IGND mA mA °C 9.0 4.6 0.8 − 14 7.5 2.5 190 500 1.0 mA mA mA mA mVrms mVrms V V mA mA mA 0.4 1.0 1.0 16. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 17. For output current capability for TA < 0°C, please refer to Figure 20. 18. TA must be greater than 0°C. http://onsemi.com 11 NCV8535 ELECTRICAL CHARACTERISTICS − 1.9 V (Vout = 1.9 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 19.) Characteristic Output Voltage (Accuracy) Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = 25°C Output Voltage (Accuracy) Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Output Voltage (Accuracy), (Note 20) Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA Dropout Voltage (See App Note) Iload = 500 mA (Notes 21, 22) Iload = 300 mA (Notes 21, 22) Iload = 50 mA (Notes 21, 22) Peak Output Current (See Figure 16) Short Output Current (See Figure 16) Thermal Shutdown Ground Current In Regulation Iload = 500 mA (Note 21) Iload = 300 mA (Note 21) Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown SD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Shutdown Threshold Voltage ON Threshold Voltage OFF SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.9 V) ISD IOSD IOUTR IGNDsh Vnoise 0.07 53 33 2.0 0.07 0.07 10 Symbol Vout Vout Vout LineReg LoadReg VDO Min −0.9% 1.883 −1.4% 1.873 −1.5% 1.872 Typ 1.9 1.9 1.9 0.04 0.04 Max +0.9% 1.917 +1.4% 1.927 +1.5% 1.929 Unit V V V mV/V mV/mA mV 367 156 90 500 700 1030 1030 1030 800 900 Ipk Isc TJ IGND mA mA °C 160 9.0 4.6 0.8 − 14 7.5 2.5 190 500 1.0 mA mA mA mA mVrms mVrms V V mA mA mA 0.4 1.0 1.0 19. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 20. For output current capability for TA < 0°C, please refer to Figure 21. 21. TA must be greater than 0°C. 22. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. http://onsemi.com 12 NCV8535 ELECTRICAL CHARACTERISTICS − 1.8 V (Vout = 1.8 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 23.) Characteristic Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 25°C Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Output Voltage (Accuracy), (Note 24) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA Dropout Voltage (See App Note) Iload = 500 mA (Notes 25, 26) Iload = 300 mA (Notes 25, 26) Iload = 50 mA (Notes 25, 26) Peak Output Current (See Figure 16) Short Output Current (See Figure 16) Thermal Shutdown Ground Current In Regulation Iload = 500 mA (Note 25) Iload = 300 mA (Note 25) Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown SD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Shutdown Threshold Voltage ON Threshold Voltage OFF SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.8 V) ISD IOSD IOUTR IGNDsh Vnoise 0.07 52 33 2.0 0.07 0.07 10 Symbol Vout Vout Vout LineReg LoadReg VDO Min −0.9% 1.783 −1.4% 1.774 −1.5% 1.773 Typ 1.8 1.8 1.8 0.04 0.04 Max +0.9% 1.817 +1.4% 1.826 +1.5% 1.827 Unit V V V mV/V mV/mA mV 620 230 95 500 700 1130 1130 1130 830 900 Ipk Isc TJ IGND mA mA °C 160 9.0 4.6 0.8 − 14 7.5 2.5 190 500 1.0 mA mA mA mA mVrms mVrms V V mA mA mA 0.4 1.0 1.0 23. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 24. For output current capability for TA < 0°C, please refer to Figure 21. 25. TA must be greater than 0°C. 26. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. http://onsemi.com 13 NCV8535 ELECTRICAL CHARACTERISTICS − 1.5 V (Vout = 1.5 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 27.) Characteristic Output Voltage (Accuracy) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C Output Voltage (Accuracy) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Output Voltage (Accuracy), (Note 28) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA Dropout Voltage (See App Note) Iload = 500 mA (Notes 29, 30) Iload = 300 mA (Notes 29, 30) Iload = 50 mA (Notes 29, 30) Peak Output Current (See Figure 16) Short Output Current (See Figure 16) Thermal Shutdown Ground Current In Regulation Iload = 500 mA (Note 29) Iload = 300 mA (Note 29) Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown SD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Shutdown Threshold Voltage ON Threshold Voltage OFF SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.5 V) ISD IOSD IOUTR IGNDsh Vnoise 0.07 51 31 2.0 0.07 0.07 10 Symbol Vout Vout Vout LineReg LoadReg VDO Min −0.9% 1.486 −1.4% 1.479 −1.5% 1.477 Typ 1.5 1.5 1.5 0.04 0.04 Max +0.9% 1.514 +1.4% 1.521 +1.5% 1.523 Unit V V V mV/V mV/mA mV 940 500 350 500 700 1430 1430 1430 860 900 Ipk Isc TJ IGND mA mA °C 160 9.0 4.6 0.8 − 14 7.5 2.5 190 500 1.0 mA mA mA mA mVrms mVrms V V mA mA mA 0.4 1.0 1.0 27. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 28. For output current capability for TA < 0°C, please refer to Figure 22. 29. TA must be greater than 0°C. 30. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. http://onsemi.com 14 NCV8535 ELECTRICAL CHARACTERISTICS – Adjustable (Vout = 1.25 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 31) Characteristic Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Reference Voltage (Accuracy) (Note 32) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA Dropout Voltage (See App Note), Vout = 2.5 V to 10 V Iload = 500 mA (Note 33) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA Peak Output Current (Note 33) (See Figure 16) Short Output Current (See Figure 16) Thermal Shutdown Ground Current In Regulation Iload = 500 mA (Note 33) Iload = 300 mA (Note 33) Iload = 50 mA Iload = 0.1 mA In Dropout Vin = Vout −0.1 V or 2.2 V (whichever is higher), Iload = 0.1 mA In Shutdown SD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Shutdown Threshold Voltage ON Threshold Voltage OFF SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = Vout (nom) ≤ 7 V) (Note 34) Vin ≤ 5.4 V Vin > 5.4 V ISD IOSD IOUTR IGNDsh Vnoise Vout ≤ 3.3 V Vout > 3.3 V Symbol Vref Vref Vref LineReg LoadReg VDO Min −0.9% 1.239 −1.4% 1.233 −1.5% 1.231 Typ 1.25 1.25 1.25 0.04 0.04 Max +0.9% 1.261 +1.4% 1.268 +1.5% 1.269 Unit V V V mV/V mV/mA mV 340 230 110 10 500 700 860 900 990 160 Ipk Isc TJ IGND mA mA °C 9.0 4.6 0.8 − − 0.07 38 26 2.0 0.07 0.07 1.0 14 7.5 2.5 190 500 1.0 mA mA mA mA mVrms mVrms V V mA mA mA 0.4 1.0 5.0 1.0 31. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 32. For output current capability for TA < 0°C, please refer to Figures 18 to 22. 33. TA must be greater than 0°C. 34. Reverse bias protection feature valid only if Vout − Vin ≤ 7 V. http://onsemi.com 15 NCV8535 5.10 OUTPUT VOLTAGE, VOUT (V) 5.05 5.00 VOUT = 5.0 V 4.95 4.90 4.85 −40 3.05 3.04 3.03 3.02 VOUT (V) 3.01 3.00 2.99 2.98 2.97 2.96 −15 10 35 60 85 110 135 150 2.95 −40 −20 0 20 40 60 80 100 120 140 VOUT = 3.0 V TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 5. Output Voltage vs. Temperature 5.0 V Version 2.85 2.84 2.83 2.82 VOUT (V) 2.80 2.79 2.78 2.77 2.76 2.75 −40 −20 0 20 40 60 80 100 120 140 VOUT (V) 2.81 VOUT = 2.8 V 2.550 2.540 2.530 2.520 2.510 2.500 2.490 2.480 2.470 2.460 Figure 6. Output Voltage vs. Temperature 3.0 V Version VOUT = 2.5 V 2.450 −40 −20 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 7. Output Voltage vs. Temperature 2.8 V Version 1.85 1.84 1.83 1.82 VOUT (V) 1.80 1.79 1.78 1.77 1.76 1.75 −40 −20 0 20 40 60 80 100 120 140 VOUT = 1.8 V VOUT (V) 1.81 1.55 1.54 1.53 1.52 1.51 1.50 1.49 1.48 1.47 1.46 Figure 8. Output Voltage vs. Temperature 2.5 V Version VOUT = 1.5 V 1.45 −40 −20 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 9. Output Voltage vs. Temperature 1.8 V Version Figure 10. Output Voltage vs. Temperature 1.5 V Version http://onsemi.com 16 NCV8535 400 350 300 VDO (mV) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 50 mA 500 mA VDO (mV) 300 mA 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 50 mA 500 mA 300 mA TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 11. Dropout Voltage vs. Temperature 2.8 V Version 1200 1100 1000 900 800 VDO (mV) 700 600 500 400 300 200 100 0 50 mA 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) 300 mA 500 mA VDO (mV) 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 Figure 12. Dropout Voltage vs. Temperature 2.5 V Version 500 mA 300 mA 50 mA 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) Figure 13. Dropout Voltage vs. Temperature 1.8 V Version Figure 14. Dropout Voltage vs. Temperature 1.5 V Version 1000 900 800 Ipk (mA), Isc (mA) 700 500 400 300 200 100 0 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) Ipk Isc Iout (mA) (For specific values of Ipk and Isc, please refer to Figure 15) Vout (V) 600 Ipk Isc 0.97 Vout Figure 15. Peak and Short Current vs. Temperature Figure 16. Output Voltage vs. Output Current http://onsemi.com 17 NCV8535 12 10 8 IGND (mA) 6 300 mA 4 2 0 0 20 40 60 80 100 TA, TEMPERATURE (°C) 120 140 500 mA IOUT (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 50 mA 0.1 0 3.85 3.75 3.65 3.55 3.45 3.35 3.25 3.15 3.05 2.95 2.85 VIN (V) −20°C −40°C 0°C Figure 17. Ground Current vs. Temperature Figure 18. Output Current Capability for the 2.85 V Version 0.8 800 700 600 IOUT (mA) 500 400 300 200 100 0 3.8 3.7 3.6 3.5 3.4 3.3 VIN (V) 3.2 3.1 3.0 2.9 2.8 −40°C −20°C IOUT (A) −30°C −10°C 0°C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 3.5 3.4 3.3 3.2 −40°C 0°C −10°C −30°C −20°C 3.1 3.0 2.9 2.8 2.7 2.6 2.5 VIN (V) Figure 19. Output Current Capability for the 2.8 V Version Figure 20. Output Current Capability for the 2.5 V Version 800 700 600 IOUT (mA) 125°C 85°C 800 700 600 IOUT (mA) 500 400 300 200 100 −40°C −30°C −20°C 125°C 85°C 500 −40°C 400 300 200 100 0 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 −30°C −20°C −10°C 0°C 25°C −10°C 0°C 25°C 0 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 VIN (V) VIN (V) Figure 21. Output Current Capability for the 1.8 V Version Figure 22. Output Current Capability for the 1.5 V Version http://onsemi.com 18 NCV8535 100 RR, RIPPLE REJECTION (dB) 90 70 60 50 40 30 20 10 Vout = 2.5 V Cout = 10 mF TJ = 25°C 0.1 1.0 F, FREQUENCY (kHz) 10 100 500 mA 250 mA NOISE DENSITY (nV/ Hz) 80 50 mA 500 450 400 350 300 250 200 150 100 50 0 Vout = 2.5 V Iout = 500 mA TJ = 25°C 0.01 0.1 Cout = 1.0 mF Cnr = 10 nF Cout = 10 mF Cnr = 10 nF 1.0 10 100 F, FREQUENCY (kHz) Cout = 1.0 mF Cnr = 0 nF Cout = 10 mF Cnr = 0 nF 0 0.01 Figure 23. Ripple Rejection vs. Frequency Figure 24. Output Noise Density 300 250 200 150 1 oz CF 100 50 0 2 oz CF qJA (°C/W) 0 100 200 300 400 500 600 (mm2) 700 COPPER HEAT SPREADING AREA Figure 25. DFN 10 Self Heating Thermal Characteristic as a Function of Copper Area on the PCB 15 Vin at Data Sheet Test Conditions, 25°C, 1 mF Capacitance MAXIMUM ESR (W) 10 ESR (W) 15 5 V, 0.1 mF 5 V, 10 mF 5 V, 1.0 mF 10 Unstable Area 5.0 5.0 1.25 V Min ESR Stable Area 0 0 100 200 300 400 500 0 0 100 200 300 400 500 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 26. Stability with ESR vs. Iout Figure 27. Output Current vs. ESR NOTE: Typical characteristics were measured with the same conditions as electrical characteristics. http://onsemi.com 19 NCV8535 APPLICATIONS INFORMATION Reverse Bias Protection Adjustable Operation Reverse bias is a condition caused when the input voltage goes to zero, but the output voltage is kept high either by a large output capacitor or another source in the application which feeds the output pin. Normally in a bipolar LDO all the current will flow from the output pin to input pin through the PN junction with limited current capability and with the potential to destroy the IC. Due to an improved architecture, the NCV8535 can withstand up to 7.0 V on the output pin with virtually no current flowing from output pin to input pin, and only negligible amount of current (tens of mA) flowing from the output pin to ground for infinite duration. Input Capacitor The output voltage can be set by using a resistor divider as shown in Figure 2 with a range of 1.25 to 10 V. The appropriate resistor divider can be found by solving the equation below. The recommended current through the resistor divider is from 10 mA to 100 mA. This can be accomplished by selecting resistors in the kW range. As result, the Iadj*R2 becomes negligible in the equation and can be ignored. Vout + 1.25 * 1 ) R1 ) Iadj * R2 R2 (eq. 1) Example: For Vout = 2.9 V, can use R1 = 36 kW and R2 = 27 kW. 1.25 * 1 ) Dropout Voltage 36 kW + 2.91 V 27 kW (eq. 2) An input capacitor of at least 1.0 mF, any type, is recommended to improve the transient response of the regulator and/or if the regulator is located more than a few inches from the power source. It will also reduce the circuit’s sensitivity to the input line impedance at high frequencies. The capacitor should be mounted with the shortest possible track length directly across the regular’s input terminals. Output Capacitor The voltage dropout is measured at 97% of the nominal output voltage. No−Load Regulation Considerations The NCV8535 remains stable with any type of capacitor as long as it fulfills its 1.0 mF requirement. There are no constraints on the minimum ESR and it will remain stable up to an ESR of 5.0 W. Larger capacitor values will improve the noise rejection and load transient response. Noise Reduction Pin If there is no load at output of the regulator and ambient temperature is higher than 85°C leakage current flowing from input to output through pass transistor may cause increase of output voltage out of specification range up to input voltage level. To avoid this situation minimum load current of 100 mA or higher is recommended if ambient temperature exceeds 85°C. Thermal Considerations Output noise can be greatly reduced by connecting a 10 nF capacitor (Cnr) between the noise reduction pin and ground (see Figure 1). In applications where very low noise is not required, the noise reduction pin can be left unconnected. For the adjustable version, in addition to the 10 nF Cnr, a 68 pF capacitor connected in parallel with R1 (see Figure 2) is recommended to further reduce output noise and improve stability. Internal thermal limiting circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. This feature provides protection from a catastrophic device failure due to accidental overheating. This protection feature is not intended to be used as a substitute to heat sinking. The maximum power that can be dissipated, can be calculated with the equation below: PD + TJ(max) * TA RqJA (eq. 3) http://onsemi.com 20 NCV8535 DEVICE ORDERING INFORMATION Device NCV8535MNADJR2G NCV8535MN150R2G NCV8535MN180R2G NCV8535MN190R2G NCV8535MN250R2G NCV8535MN280R2G NCV8535MN285R2G NCV8535MN300R2G NCV8535MN330R2G NCV8535MN350R2G NCV8535MN500R2G Voltage Version Adj. 1.5 V 1.8 V 1.9 V 2.5 V 2.8 V 2.85 V 3.0 V 3.3 V 3.5 V 5.0 V Marking Code ADJ 150 180 190 250 280 285 300 330 350 500 DFN10 (Pb−Free) 3000 / Tape & Reel Package Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Please contact factory for other voltage options. http://onsemi.com 21 NCV8535 PACKAGE DIMENSIONS DFN10, 3x3 CASE 485C−01 ISSUE B D A B L1 EDGE OF PACKAGE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30 MICRONS ONTO BOTTOM SURFACE OF TERMINAL b. 6. DETAILS A AND B SHOW OPTIONAL VIEWS FOR END OF TERMINAL LEAD AT EDGE OF PACKAGE. DIM A A1 A3 b D D2 E E2 e K L L1 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 3.00 BSC 2.40 2.60 3.00 BSC 1.70 1.90 0.50 BSC 0.19 TYP 0.35 0.45 0.00 0.03 PIN 1 REFERENCE 2X 2X 0.15 C 0.15 C 0.10 C 10X DETAIL B (A3) A A1 SEATING PLANE 0.08 C SIDE VIEW D2 10X A1 DETAIL A 5 C L e 1 10X K E2 10 10X 6 b BOTTOM VIEW 10X 0.10 C A B 0.05 C NOTE 3 The products described herein NCV8535, may be covered by one or more of the following U.S. patents; 5,920,184, 5,966,004, and 5,834,926. There may be other patents pending. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 22 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 0.5651 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ E DETAIL A Bottom View (Optional) EXPOSED Cu MOLD CMPD TOP VIEW A3 DETAIL B Side View (Optional) SOLDERING FOOTPRINT* 2.6016 2.1746 1.8508 3.3048 0.3008 10X 0.5000 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NCV8535/D