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NCV8715SQ21T2G

NCV8715SQ21T2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT-353(SC-88A)

  • 描述:

    IC REG LINEAR 2.1V 50MA SC88A

  • 数据手册
  • 价格&库存
NCV8715SQ21T2G 数据手册
NCV8715 50 mA Ultra-Low Iq, Wide Input Voltage, Low Dropout Linear Voltage Regulator The NCV8715 is 50 mA LDO Linear Voltage Regulator. It is a very stable and accurate device with ultra−low ground current consumption (4.7 mA over the full output load range) and a wide input voltage range (up to 24 V). The regulator incorporates several protection features such as Thermal Shutdown and Current Limiting. www.onsemi.com MARKING DIAGRAMS Features • Operating Input Voltage Range: 2.5 V to 24 V • Fixed Voltage Options Available: 1.2 V to 5.0 V • Ultra Low Quiescent Current: Max. 5.8 mA Over Full Load and • • • • • • • Temperature ±2% Accuracy Over Full Load, Line and Temperature Variations PSRR: 52 dB at 100 kHz Noise: 190 mVRMS from 200 Hz to 100 kHz Thermal Shutdown and Current Limit protection Available in XDFN6 1.5 x 1.5 mm and SC−70 (SC−88A) Package NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable; Device Temperature Grade 1: −40°C to +125°C Ambient Operating Temperature Range These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 XDFN6 CASE 711AE SC−70−5 (SC−88A) CASE 419A XXXMG G XXX MG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 19 of this data sheet. Typical Applications • Infotainment, Audio • Communication Systems • Safety Systems 1.2 V < Vout < 5 V 2.5 V < Vout < 24 V OUT IN 1 mF Ceramic NCV8715 NC GND NC 1 mF Ceramic Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 6 1 Publication Order Number: NCV8715/D NCV8715 IN THERMAL SHUTDOWN UVLO BANDGAP REFERENCE MOSFET DRIVER WITH CURRENT LIMIT OUT EEPROM GND Figure 2. Simplified Block Diagram Figure 3. Pin Description PIN FUNCTION DESCRIPTION Pin No. SC−70 XDFN6 Pin Name 5 6 OUT Regulated output voltage pin. A small 0.47 mF ceramic capacitor is needed from this pin to ground to assure stability. 1 2 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 2 3 GND Power supply ground. 3 4 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. − 5 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 4 1 IN Description Input pin. A small capacitor is needed from this pin to ground to assure stability. www.onsemi.com 2 NCV8715 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN −0.3 to 24 V VOUT −0.3 to 6 V tSC Indefinite s TJ(MAX) 150 °C TA −40 to 125 °C Storage Temperature Range TSTG −55 to 150 °C Moisture Sensitivity Level MSL MSL1 − ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Input Voltage (Note 1) Output Voltage Output Short Circuit Duration Maximum Junction Temperature Operating Ambient Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 ESD Charged Device Model tested per EIA/JESD22−C101E Latch up Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Characteristics, SC−70 (Note 3) Thermal Resistance, Junction−to−Air (Note 4) RqJA 390 °C/W Thermal Characteristics, XDFN6 (Note 3) Thermal Resistance, Junction−to−Air (Note 4) RqJA 260 °C/W 3. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 4. As measured using a copper heat spreading area of 650 mm2, 1 oz copper thickness. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Input Voltage VIN 2.5 24 V Junction Temperature TJ −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 3 NCV8715 ELECTRICAL CHARACTERISTICS − Voltage Version 1.2 V −40°C ≤ TJ ≤ 125°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 7) Parameter Operating Input Voltage Test Conditions Symbol Min IOUT ≤ 10 mA VIN 10 mA< IOUT < 50 mA Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 mA < IOUT < 50 mA VOUT Max Unit 2.5 24 V 3.0 24 1.164 Typ 1.2 1.236 V Line Regulation 2.5 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 2 10 mV Load Regulation IOUT = 0 mA to 50 mA RegLOAD 5 10 mV − mV 200 mA Dropout Voltage (Note 5) Maximum Output Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 6) Thermal Shutdown Hysteresis (Note 6) VDO (Note 8) IOUT 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 PSRR 60 dB VOUT = 1.2 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 65 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH VIN = 3.0 V, VOUT = 1.2 V VPP = 200 mV modulation IOUT = 1 mA, COUT= 10 mF f = 100 kHz 100 − 15 5.8 − °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Not Characterized at VIN = 3.0 V, VOUT = 1.2 V, IOUT = 50 mA. 6. Guaranteed by design and characterization. 7. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 8. Respect SOA. www.onsemi.com 4 NCV8715 ELECTRICAL CHARACTERISTICS − Voltage Version 1.5 V −40°C ≤ TJ ≤ 125°C; VIN = 2.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 11) Parameter Operating Input Voltage Test Conditions Symbol Min IOUT ≤ 10 mA VIN 10 mA < IOUT < 50 mA Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 < IOUT < 50 mA Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation IOUT = 0 mA to 50 mA Dropout Voltage (Note 9) Maximum Output Current Ground Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 10) Thermal Shutdown Hysteresis (Note 10) VOUT Max Unit 2.5 24 V 3.0 24 1.455 Typ 1.5 1.545 V RegLINE 2 10 mV RegLOAD 5 10 mV − mV 200 mA 5.8 mA VDO (Note 12) IOUT 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 PSRR 56 dB VOUT = 1.5 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 75 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH VIN = 3.0 V, VOUT = 1.5 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz 100 − 15 − °C 9. Not Characterized at VIN = 3.0 V, VOUT = 1.5 V, IOUT = 50 mA. 10. Guaranteed by design and characterization. 11. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 12. Respect SOA. www.onsemi.com 5 NCV8715 ELECTRICAL CHARACTERISTICS − Voltage Version 1.8 V −40°C ≤ TJ ≤ 125°C; VIN = 2.8V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 15) Parameter Operating Input Voltage Test Conditions Symbol Min IOUT ≤10 mA VIN 10 mA < IOUT < 50 mA Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 < IOUT < 10 mA VOUT Max Unit 2.8 24 V 3.0 24 1.746 Typ 1.8 1.854 V Line Regulation 3 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 2 10 mV Load Regulation IOUT = 0 mA to 50 mA RegLOAD 5 10 mV Dropout Voltage (Note 13) Maximum Output Current Ground Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 14) Thermal Shutdown Hysteresis (Note 14) VDO mV (Note 16) IOUT 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 PSRR 60 dB VOUT = 1.8 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 95 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH VIN = 3.0 V, VOUT = 1.8 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz 100 − 15 200 mA 5.8 mA − °C 13. Not characterized at VIN = 3.0 V, VOUT = 1.8 V, IOUT = 50 mA 14. Guaranteed by design and characterization. 15. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 16. Respect SOA. www.onsemi.com 6 NCV8715 ELECTRICAL CHARACTERISTICS − Voltage Version 2.1 V −40°C ≤ TJ ≤ 125°C; VIN = 3.1V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 19) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 50 mA VIN 3.1 Output Voltage Accuracy 3.1 V < VIN < 24 V, 0 < IOUT < 50 mA VOUT 2.058 3.1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE Line Regulation 3.3 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation IOUT = 0 mA to 50 mA Dropout Voltage (Note 17) Maximum Output Current Ground Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 18) Thermal Shutdown Hysteresis (Note 18) RegLOAD Typ Max Unit 24 V 2.1 2.142 V 3 45 mV 3 10 10 15 VDO mV mV (Note 20) IOUT 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 PSRR 60 dB VOUT = 2.1 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 105 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH VIN = 3.1 V, VOUT = 2.1 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz 100 − 15 200 mA 5.8 mA − °C 17. Not characterized at VIN = 3.1 V, VOUT = 2.1 V, IOUT = 50 mA 18. Guaranteed by design and characterization. 19. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 20. Respect SOA. www.onsemi.com 7 NCV8715 ELECTRICAL CHARACTERISTICS − Voltage Version 2.5 V −40°C ≤ TJ ≤ 125°C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 23) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 50 mA VIN 3.5 Output Voltage Accuracy 3.5 V < VIN < 24 V, 0 < IOUT < 50 mA VOUT 2.45 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation IOUT = 0 mA to 50 mA Dropout Voltage (Note 21) VDO = VIN – (VOUT(NOM) – 125 mV) IOUT = 50 mA VDO Maximum Output Current (Note 24) IOUT 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 PSRR 60 dB VOUT = 2.5 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 115 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH Ground Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 22) Thermal Shutdown Hysteresis (Note 22) VIN = 3.5 V, VOUT = 2.5 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz Typ Max Unit 24 V 2.5 2.55 V RegLINE 3 10 mV RegLOAD 10 15 mV 260 450 mV 200 mA 5.8 mA 100 − 15 − °C 21. Characterized when VOUT falls 125 mV below the regulated voltage and only for devices with VOUT = 2.5 V. 22. Guaranteed by design and characterization. 23. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 24. Respect SOA. www.onsemi.com 8 NCV8715 ELECTRICAL CHARACTERISTICS − Voltage Version 3.0 V −40°C ≤ TJ ≤ 125°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 27) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 50 mA VIN 4.0 Output Voltage Accuracy 4.0 V < VIN < 24 V, 0< IOUT < 50 mA VOUT 2.94 Typ Max Unit 24 V 3.0 3.06 V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 3 10 mV Load Regulation IOUT = 0 mA to 50 mA RegLOAD 10 15 mV VDO = VIN – (VOUT(NOM) – 150 mV) IOUT = 50 mA VDO 400 mV 200 mA 5.8 mA Dropout voltage (Note 25) Maximum Output Current Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 26) Thermal Shutdown Hysteresis (Note 26) 250 (Note 28) IOUT 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 PSRR 60 dB VOUT = 3 V, IOUT = 50 mA, f = 200 Hz to 100 kHz, COUT = 10 mF VN 135 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH VIN = 4.0 V, VOUT = 3.0 V VPP = 100 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz 100 - 25 - °C 25. Characterized when VOUT falls 150 mV below the regulated voltage and only for devices with VOUT = 3.0 V 26. Guaranteed by design and characterization. 27. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 28. Respect SOA www.onsemi.com 9 NCV8715 ELECTRICAL CHARACTERISTICS − Voltage Version 3.3 V −40°C ≤ TJ ≤ 125°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 31) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 50 mA VIN 4.3 Output Voltage Accuracy 4.3 V < VIN < 24 V, 0 < IOUT < 50 mA VOUT 3.234 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation IOUT = 0 mA to 50 mA VDO = VIN – (VOUT(NOM) – 165 mV) IOUT = 50 mA VDO Dropout Voltage (Note 29) Maximum Output Current Ground Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 30) Thermal Shutdown Hysteresis (Note 30) Typ Max Unit 24 V 3.3 3.366 V RegLINE 3 10 mV RegLOAD 10 15 mV 230 350 mV 200 mA 5.8 mA (Note 32) IOUT 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 PSRR 60 dB VOUT = 4.3 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 140 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH VIN = 4.3 V, VOUT = 3.3 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz 100 − 15 − °C 29. Characterized when VOUT falls 165 mV below the regulated voltage and only for devices with VOUT = 3.3 V. 30. Guaranteed by design and characterization. 31. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 32. Respect SOA. www.onsemi.com 10 NCV8715 ELECTRICAL CHARACTERISTICS − Voltage Version 5.0 V −40°C ≤ TJ ≤ 125°C; VIN = 6.0 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 35) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 50 mA VIN 6.0 Output Voltage Accuracy 6.0V < VIN < 24V, 0< IOUT < 50 mA VOUT 4.9 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, Iout = 1mA Load Regulation IOUT = 0 mA to 50 mA VDO = VIN – (VOUT(NOM) – 250 mV) IOUT = 50 mA VDO Dropout Voltage (Note 33) Maximum Output Current Ground Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 34) Thermal Shutdown Hysteresis (Note 34) Typ Max Unit 24 V 5.0 5.1 V RegLINE 3 10 mV RegLOAD 10 15 mV 230 350 mV 200 mA 5.8 mA (Note 36) IOUT 0 < IOUT < 50 mA, VIN = 24 V IGND 3.4 PSRR 56 dB VOUT = 5.0 V, IOUT = 50 mA f = 200 Hz to 100 kHz, COUT = 10 mF VN 190 mVrms Temperature increasing from TJ = +25°C TSD 170 °C Temperature falling from TSD TSDH VIN = 6.0 V, VOUT = 5.0 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz 90 − 15 − °C 33. Characterized when VOUT falls 250 mV below the regulated voltage and only for devices with VOUT = 5.0 V. 34. Guaranteed by design and characterization. 35. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 36. Respect SOA. www.onsemi.com 11 NCV8715 1.2 2.506 VIN = 3.0 V 1.198 1.197 1.196 VIN = (5.0 − 24.0) V 1.195 1.194 1.193 1.192 −40 NCV8715x12xxx CIN = COUT = 1 mF IOUT = 1 mA −20 0 20 VIN = 3.0 V 2.504 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 1.199 2.502 2.5 VIN = (5.0 − 24.0) V 2.498 2.496 2.494 NCV8715x25xxx CIN = COUT = 1 mF IOUT = 1 mA 2.492 40 60 80 100 2.49 −40 120 −20 0 3.315 5.015 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 5.02 3.312 3.309 3.306 3.303 3.294 −40 NCV8715x33xxx CIN = COUT = 1 mF IOUT = 1 mA VIN = 4.3 V to 24 V −20 0 20 40 60 80 TEMPERATURE (°C) 100 VIN = 6.0 V 4.995 NCV8715x50xxx CIN = COUT = 1 mF IOUT = 1 mA 4.99 0 20 40 60 80 100 JUNCTION TEMPERATURE (°C) 1.192 1.188 VIN = 3.0 V VIN = 5.0 V VIN = 10 V VIN = 15 V VIN = 20 V VIN = 24 V 1.176 1.172 0 10 20 30 OUTPUT CURRENT (mA) NCV8715x25xxx CIN = COUT = 1 mF TA = 25°C 2.500 2.496 2.492 2.488 VIN = 3.5 V VIN = 5.0 V VIN = 10 V VIN = 15 V VIN = 20 V VIN = 24 V 2.484 2.480 2.476 2.472 40 120 Figure 7. Output Voltage vs. Temperature OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) −20 2.504 1.180 120 5 4.98 −40 120 NCV8715x12xxx CIN = COUT = 1 mF TA = 25°C 1.184 100 5.005 4.985 1.204 1.196 80 VIN = (8.0 − 24.0) V 5.01 Figure 6. Output Voltage vs. Temperature 1.200 60 Figure 5. Output Voltage vs. Temperature 3.318 3.297 40 TEMPERATURE (°C) TEMPERATURE (°C) Figure 4. Output Voltage vs. Temperature 3.3 20 50 0 Figure 8. Output Voltage vs. Output Current 10 20 30 OUTPUT CURRENT (mA) 40 Figure 9. Output Voltage vs. Output Current www.onsemi.com 12 50 NCV8715 3.312 OUTPUT VOLTAGE (V) 3.308 3.304 3.300 3.296 3.292 VIN = 4.3 V VIN = 10 V VIN = 15 V VIN = 20 V VIN = 24 V 3.288 3.284 5.016 NCV8715x50xxx CIN = COUT = 1 mF TA = 25°C 5.008 OUTPUT VOLTAGE (V) NCV8715x33xxx CIN = COUT = 1 mF TA = 25°C 5.000 4.992 4.984 4.976 VIN = 6.0 V VIN = 10 V VIN = 15 V VIN = 20 V VIN = 24 V 4.968 4.960 3.280 4.952 0 10 20 30 40 0 50 10 OUTPUT CURRENT (mA) Figure 10. Output Voltage vs. Output Current 50 NCV8715x33xxx CIN = COUT = 1 mF 350 TA = 125°C 300 250 TA = 25°C 200 150 TA = −40°C 100 DROPOUT VOLTAGE (mV) DROPOUT VOLTAGE (mV) 40 400 NCV8715x25xxx CIN = COUT = 1 mF 350 50 300 TA = 125°C 250 TA = 25°C 200 150 100 TA = −40°C 50 0 0 0 10 20 30 40 0 50 10 OUTPUT CURRENT (mA) 20 30 40 50 OUTPUT CURRENT (mA) Figure 12. Dropout Voltage vs. Output Current Figure 13. Dropout Voltage vs. Output Current 400 40 GND, QUIESCENT CURRENT (mA) NCV8715x50xxx CIN = COUT = 1 mF 350 DROPOUT VOLTAGE (mV) 30 Figure 11. Output Voltage vs. Output Current 400 300 TA = 125°C 250 200 TA = 25°C 150 100 TA = −40°C 50 0 20 OUTPUT CURRENT (mA) 0 10 20 30 40 50 NCV8715x12xxx CIN = COUT = 1 mF TA = 25°C 35 30 25 20 15 IOUT = 0 IOUT = 50 mA 10 5 0 0 5 10 15 20 OUTPUT CURRENT (mA) INPUT VOLTAGE (V) Figure 14. Dropout Voltage vs. Output Current Figure 15. Ground Current vs. Input Voltage www.onsemi.com 13 25 NCV8715 40 IOUT = 0 IOUT = 50 mA 35 NCV8715x25xxx CIN = COUT = 1 mF TA = 25°C 30 GND, QUIESCENT CURRENT (mA) GND, QUIESCENT CURRENT (mA) 40 25 20 15 10 5 0 30 25 20 15 10 5 0 0 5 10 15 20 25 0 5 10 INPUT VOLTAGE (V) 20 25 Figure 17. Ground Current vs. Input Voltage 4.5 40 NCV8715x50xxx CIN = COUT = 1 mF TA = 25°C IOUT = 0 IOUT = 50 mA 35 30 QUIESCENT CURRENT (mA) GND, QUIESCENT CURRENT (mA) 15 INPUT VOLTAGE (V) Figure 16. Ground Current vs. Input Voltage 25 20 15 10 5 0 5 10 15 20 4.3 4.0 3.8 3.5 3.3 3.0 2.8 2.5 −40 0 25 VIN = 3 V VIN = 10 V VIN = 24 V −20 0 INPUT VOLTAGE (V) NCV8715x12xxx CIN = COUT = 1 mF IOUT = 0 20 40 60 80 100 120 TEMPERATURE (°C) Figure 18. Ground Current vs. Input Voltage Figure 19. Quiescent Current vs. Temperature 6.0 6.0 NCV8715x25xxx CIN = COUT = 1 mF IOUT = 0 5.5 5.0 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) NCV8715x33xxx CIN = COUT = 1 mF TA = 25°C IOUT = 0 IOUT = 50 mA 35 4.5 4.0 3.5 3.0 VIN = 3.5 V VIN = 10 V VIN = 24 V 2.5 2.0 −40 −20 0 20 40 60 80 100 NCV8715x33xxx CIN = COUT = 1 mF IOUT = 0 5.5 5.0 4.5 4.0 3.5 3.0 VIN = 4.3 V VIN = 10 V VIN = 24 V 2.5 2.0 −40 120 −20 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 20. Quiescent Current vs. Temperature Figure 21. Quiescent Current vs. Temperature www.onsemi.com 14 NCV8715 100 NCV8715x50xxx CIN = COUT = 1 mF IOUT = 0 5.5 5.0 4.5 4.0 3.5 3.0 VIN = 6 V VIN = 10 V VIN = 24 V 2.5 2.0 −40 PSRR (dB) 80 0 40 IOUT = 10 mA 0 20 40 60 80 100 0.1 120 1 10 100 TEMPERATURE (°C) FREQUENCY (kHz) Figure 22. Quiescent Current vs. Temperature Figure 23. PSRR vs. Frequency 100 NCV8715x25xxx COUT = 10 mF VIN = 3.5 V + 200 mVPP Modulation TA = 25°C IOUT = 1 mA IOUT = 50 mA NCV8715x33xxx COUT = 10 mF VIN = 4.3 V + 200 mVPP Modulation TA = 25°C 80 40 20 1000 IOUT = 1 mA 60 40 20 IOUT = 10 mA IOUT = 10 mA IOUT = 50 mA 0 0 0.1 1 10 100 0.1 1000 10 100 FREQUENCY (kHz) Figure 24. PSRR vs. Frequency Figure 25. PSRR vs. Frequency 1.6 OUTPUT VOLTAGE NOISE (mV/√Hz) NCV8715x50xxx COUT = 10 mF VIN = 6.0 V + 200 mVPP Modulation TA = 25°C IOUT = 1 mA 60 40 20 IOUT = 50 mA IOUT = 10 mA 0 0.1 1 FREQUENCY (kHz) 100 PSRR (dB) IOUT = 1 mA IOUT = 50 mA 60 80 60 20 PSRR (dB) 100 −20 NCV8715x12xxx COUT = 10 mF VIN = 3.0 V + 200 mVPP Modulation TA = 25°C 80 PSRR (dB) QUIESCENT CURRENT (mA) 6.0 1 10 100 1000 1000 COUT = 10 mF, 65.1 mVrms @ 200 Hz − 100 kHz 1.4 COUT = 4.7 mF, 80.5 mVrms @ 200 Hz − 100 kHz 1.2 COUT = 1.0 mF, 172.1 mVrms @ 200 Hz − 100 kHz 1.0 COUT = 0.47 mF, 208 mVrms @ 200 Hz − 100 kHz COUT = 2.2 mF, 111.5 mVrms @ 200 Hz − 100 kHz 0.8 0.6 0.4 0.2 NCV8715x12xxx IOUT = 50 mA TA = 25°C VIN = 3 V 0.0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) FREQUENCY (kHz) Figure 26. PSRR vs. Frequency Figure 27. Output Spectral Noise Density vs. Frequency www.onsemi.com 15 NCV8715 COUT = 4.7 mF, 128.4 mVrms @ 200 Hz − 100 kHz 3.5 COUT = 2.2 mF, 152.2 mVrms @ 200 Hz − 100 kHz 3.0 COUT = 1.0 mF, 172.1 mVrms @ 200 Hz − 100 kHz COUT = 0.47 mF, 203.6 mVrms @ 200 Hz − 100 kHz 2.5 NCV8715x25xxx IOUT = 50 mA TA = 25°C VIN = 3.5 V 2.0 1.5 1.0 0.5 0.0 0.01 0.1 1 10 100 1000 COUT = 10 mF, 137.1 mVrms @ 200 Hz − 100 kHz 4.5 COUT = 4.7 mF, 145.7 mVrms @ 200 Hz − 100 kHz 4.0 COUT = 2.2 mF, 170.6 mVrms @ 200 Hz − 100 kHz 3.5 COUT = 1.0 mF, 220.8 mVrms @ 200 Hz − 100 kHz COUT = 0.47 mF, 271.1 mVrms @ 200 Hz − 100 kHz 3.0 NCV8715x33xxx IOUT = 50 mA TA = 25°C VIN = 4.3 V 2.5 2.0 1.5 1.0 0.5 0.0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) FREQUENCY (kHz) Figure 28. Output Spectral Noise Density vs. Frequency Figure 29. Output Spectral Noise Density vs. Frequency 7.0 OUTPUT VOLTAGE NOISE (mV/√Hz) 5.0 COUT = 10 mF, 114.7 mVrms @ 200 Hz − 100 kHz OUTPUT VOLTAGE NOISE (mV/√Hz) OUTPUT VOLTAGE NOISE (mV/√Hz) 4.0 COUT = 10 mF, 186.1 mVrms @ 200 Hz − 100 kHz COUT = 4.7 mF, 189.41 mVrms @ 200 Hz − 100 kHz 6.0 COUT = 2.2 mF, 207.6 mVrms @ 200 Hz − 100 kHz COUT = 1.0 mF, 244.5 mVrms @ 200 Hz − 100 kHz 5.0 COUT = 0.47 mF, 305.0 mVrms @ 200 Hz − 100 kHz 4.0 NCV8715x50xxx IOUT = 50 mA TA = 25°C VIN = 6.0 V 3.0 2.0 1.0 0.0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 30. Output Spectral Noise Density vs. Frequency Figure 31. Line Transient Response Figure 32. Line Transient Response Figure 33. Line Transient Response www.onsemi.com 16 NCV8715 Figure 34. Load Transient Response Figure 35. Load Transient Response Figure 36. Load Transient Response Figure 37. Input Voltage Turn−On Response Figure 38. Input Voltage Turn−On Response Figure 39. Input Voltage Turn−On Response www.onsemi.com 17 NCV8715 APPLICATIONS INFORMATION ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCV8715 can handle is given by: The NCV8715 is the member of new family of Wide Input Voltage Range Low Dropout Regulators which delivers Ultra Low Ground Current consumption, Good Noise and Power Supply Rejection Ratio Performance. P D(MAX) + Input Decoupling (CIN) It is recommended to connect at least 0.1 mF Ceramic X5R or X7R capacitor between IN and GND pin of the device. This capacitor will provide a low impedance path for any unwanted AC signals or Noise superimposed onto constant Input Voltage. The good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. Higher capacitance and lower ESR Capacitors will improve the overall line transient response. ƪTJ(MAX) * TAƫ (eq. 1) R qJA The power dissipated by the NCV8715 for given application conditions can be calculated from the following equations: P D [ V INǒI GNDǒI OUTǓǓ ) I OUTǒV IN * V OUTǓ (eq. 2) or V IN(MAX) [ Output Decoupling (COUT) P D(MAX) ) ǒV OUT I OUT ) I GND I OUTǓ (eq. 3) For reliable operation, junction temperature should be limited to +125°C maximum. The NCV8715 does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. The device is designed to be stable with standard ceramics capacitors with values of 0.47 mF or greater up to 10 mF. The X5R and X7R types have the lowest capacitance variations over temperature thus they are recommended. Hints VIN and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCV8715, and make traces as short as possible. Power Dissipation and Heat sinking The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the www.onsemi.com 18 NCV8715 ORDERING INFORMATION Nominal Output Voltage Marking NCV8715SQ12T2G 1.2 V V5A NCV8715SQ15T2G 1.5 V V5C NCV8715SQ18T2G 1.8 V V5D NCV8715SQ21T2G 2.1 V V5J NCV8715SQ25T2G 2.5 V V5E NCV8715SQ30T2G 3.0 V V5F NCV8715SQ33T2G 3.3 V V5G NCV8715SQ50T2G 5.0 V V5H NCV8715MX12TBG 1.2 V VA NCV8715MX15TBG 1.5 V VC NCV8715MX18TBG 1.8 V VE NCV8715MX25TBG 2.5 V VE NCV8715MX30TBG 3.0 V VF NCV8715MX33TBG 3.3 V VG NCV8715MX50TBG 5.0 V VH Device Package Shipping† SC−88A/SC−70 (Pb−Free)* 3000 / Tape & Reel XDFN6 (Pb−Free)* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 19 NCV8715 PACKAGE DIMENSIONS XDFN6 1.5x1.5, 0.5P CASE 711AE ISSUE B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.10 AND 0.20mm FROM TERMINAL TIP. L A B L1 PIN ONE REFERENCE 0.10 C 2X 2X 0.10 C ÍÍÍ ÍÍÍ ÍÍÍ DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS E DIM A A1 A3 b D E e L L1 L2 ÉÉÉ ÉÉÉ EXPOSED Cu TOP VIEW MOLD CMPD DETAIL B ALTERNATE CONSTRUCTIONS A DETAIL B 0.05 C A3 MILLIMETERS MIN MAX 0.35 0.45 0.00 0.05 0.13 REF 0.20 0.30 1.50 BSC 1.50 BSC 0.50 BSC 0.40 0.60 --0.15 0.50 0.70 A1 0.05 C C SIDE VIEW RECOMMENDED MOUNTING FOOTPRINT* SEATING PLANE 5X DETAIL A 6X e 1 0.35 0.73 5X L 3 L2 1.80 0.83 6 4 6X DIMENSIONS: MILLIMETERS b 0.10 C A BOTTOM VIEW 0.05 C 0.50 PITCH *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. B NOTE 3 www.onsemi.com 20 NCV8715 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L A G 5 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H SOLDER FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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