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NCV890201MWTXG

NCV890201MWTXG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    VFDFN10

  • 描述:

    SWITCHING REGULATOR, CURRENT-MOD

  • 数据手册
  • 价格&库存
NCV890201MWTXG 数据手册
NCV890201 Buck Switching Regulator Automotive 2.0 A, 2 MHz The NCV890201 is a fixed−frequency, monolithic, Buck switching regulator intended for Automotive, battery−connected applications that must operate with up to a 36 V input supply. The regulator is suitable for systems with low noise and small form factor requirements often encountered in automotive driver information systems. The NCV890201 is capable of converting the typical 4.5 V to 18 V automotive input voltage range to outputs as low as 3.3 V at a constant switching frequency above the sensitive AM band, eliminating the need for costly filters and EMI countermeasures. Two pins are provided to synchronize switching to a clock, or to another NCV890201. The NCV890201 also provides several protection features expected in Automotive power supply systems such as current limit, short circuit protection, and thermal shutdown. In addition, the high switching frequency produces low output voltage ripple even when using small inductor values and an all−ceramic output filter capacitor − forming a space−efficient switching regulator solution. www.onsemi.com MARKING DIAGRAM DFN10 CASE 485C A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Device (Note: Microdot may be in either location) Features • • • • • • • • • • • • • ORDERING INFORMATION Internal N−Channel Power Switch Low VIN Operation Down to 4.5 V High VIN Operation to 36 V Withstands Load Dump to 40 V 2 MHz Free−running Switching Frequency Auto−synchronizes with Other NCV890201 or to an External Clock Logic level Enable Input Can be Directly Tied to Battery 2.2 A (min) Cycle−by−Cycle Peak Current Limit Short Circuit Protection enhanced by Frequency Foldback ±1.75% Output Voltage Tolerance Output Voltage Adjustable Down to 0.8 V 1.4 Millisecond Internal Soft−Start Thermal Shutdown (TSD) CDRV CIN SYNC OUT EN 1 VIN 2 DRV 4 GND 5 EN • Low Shutdown Current • Wettable Flanks DFN • NCV Prefix for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Applications • • • • L1 SW 10 CBST DFW BST 9 3 SYNCO SYNCI 8 See detailed ordering and shipping information in the package dimensions section on page 18 of this data sheet. Audio Infotainment Safety − Vision Systems Instrumentation DBST NCV890201 VIN V8902 01 ALYWG G SYNC IN VOUT COUT RFB1 FB 7 RFB2 COMP 6 RCOMP CCOMP Figure 1. Typical Application © Semiconductor Components Industries, LLC, 2015 August, 2019 − Rev. 3 1 Publication Order Number: NCV890201/D NCV890201 CDRV VIN VIN CIN SW 3.3 V Reg SYNCO L1 DFW CBST Oscillator DRV Sync Out DBST PWM LOGIC ON OFF Sync Out In BST SYNCI Sync In 2A GND TSD Soft−Start RESET + − + − + + S FB + COMP VOLTAGES MONITORS Enable RCOMP EN CCOMP Figure 2. NCV890201 Block Diagram www.onsemi.com 2 VOUT COUT NCV890201 MAXIMUM RATINGS Rating Symbol Min/Max Voltage VIN Max Voltage VIN to SW Min/Max Voltage SW Min Voltage SW − 20ns Value Unit −0.3 to 40 V 40 V −0.7 to 40 V −3.0 V Min/Max Voltage BST −0.3 to 40 Min/Max Voltage BST to SW −0.3 to 3.6 V Min/Max Voltage on EN −0.3 to 40 V Min/Max Voltage COMP −0.3 to 2 V Min/Max Voltage FB −0.3 to 18 V Min/Max Voltage SYNCO −0.3 to 3.6 V Min/Max Voltage DRV −0.3 to 3.6 V −0.3 to 6 V Min/Max Voltage SYNCI Thermal Resistance, 3x3 DFN Junction−to−Ambient* 50 °C/W −55 to +150 °C TJ −40 to +150 °C VESD 2.0 200 >1.0 kV V kV MSL Level 1 RqJA Storage Temperature range Operating Junction Temperature Range ESD withstand Voltage Human Body Model Machine Model Charge Device Model Moisture Sensitivity Peak Reflow Soldering Temperature 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Mounted on 1 sq. in. of a 4−layer PCB with 1 oz. copper thickness. www.onsemi.com 3 NCV890201 VIN 1 10 SW DRV 2 9 BST SYNCO 3 8 SYNCI GND 4 7 FB EN 5 6 COMP (Top View) Figure 3. Pin Connections PIN FUNCTION DESCRIPTIONS Pin No. Symbol Description 1 VIN Input voltage from battery. Place an input filter capacitor in close proximity to this pin. 2 DRV Output voltage to provide a regulated voltage to the Power Switch gate driver. 3 SYNCO 4 GND 5 EN 6 COMP Synchronization output. Turn−on of the Power Switch causes the SYNCO signal to fall. SYNCO rises half a switching period later. Connecting to the SYNCI pin of another NCV890201 causes them to switch out−of−phase Battery return, and output voltage ground reference. This TTL compatible Enable input allows the direct connection of Battery as the enable signal. Grounding this input stops switching and reduces quiescent current draw to a minimum. Error Amplifier output, for tailoring transient response with external compensation components. 7 FB 8 SYNCI 9 BST Bootstrap input provides drive voltage higher than VIN to the N−channel Power Switch for optimum switch RDS(on) and highest efficiency. 10 SW Switching node of the Regulator. Connect the output inductor and cathode of the freewheeling diode to this pin. Exposed Pad Feedback input pin to program output voltage, and detect pre−charged or shorted output conditions. Synchronization input. Connecting an external clock to the SYNCI pin synchronizes switching to the rising edge of the SYNCI voltage. Connect to Pin 4 (electrical ground) and to a low thermal resistance path to the ambient temperature environment. www.onsemi.com 4 NCV890201 ELECTRICAL CHARACTERISTICS (VIN = 4.5 V to 28 V, VEN = 5 V, VBST = VSW + 3.0 V, CDRV = 0.1 mF, Min/Max values are valid for the temperature range −40°C ≤ TJ ≤ 150°C unless noted otherwise, and are guaranteed by test, design or statistical correlation.) Parameter Symbol Conditions Quiescent Current, shutdown IqSD Quiescent Current, enabled Min Typ Max Unit VIN = 13.2 V, VEN = 0 V, TJ = 25°C 5 mA IqEN VIN = 13.2 V 3 mA UVLO Start Threshold VUVLSTT VIN rising 4.1 4.5 V UVLO Stop Threshold VUVLSTP VIN falling 3.9 4.4 V UVLO Hysteresis VUVLOHY 0.1 0.2 V Logic Low VENLO 0.8 Logic High VENHI QUIESCENT CURRENT UNDERVOLTAGE LOCKOUT − VIN (UVLO) ENABLE (EN) Input Current IEN 8 tSS 0.8 V 2 V 30 mA 1.4 2.0 ms 0.8 0.814 V 1 mA SOFT−START (SS) Soft−Start Completion Time VOLTAGE REFERENCE FB Pin Voltage during regulation VFBR COMP shorted to FB 0.786 IFBBIAS VFB = 0.8 V 0.25 gm VCOMP = 1.3 V 4.5 V < VIN < 18 V 20 V < VIN < 28 V 0.6 0.3 ERROR AMPLIFIER FB Bias Current Transconductance gm(HV) Output Resistance COMP Source Current Limit ROUT 1 0.5 1.5 0.75 1.4 ISOURCE VFB = 0.63 V, VCOMP = 1.3 V 4.5 V < VIN < 18 V 20 V < VIN < 28 V 75 40 COMP Sink Current Limit ISINK VFB = 0.97 V, VCOMP = 1.3 V 4.5 V < VIN < 18 V 20 V < VIN < 28 V 75 40 Minimum COMP voltage VCMPMIN VFB = 0.97 V 0.2 FSW FSW(HV) 4.5 < VIN < 18 V 20 V < VIN < 28 V 1.8 0.9 mmho MW mA mA 0.7 V 2.2 1.1 MHz OSCILLATOR Frequency 2.0 1.0 VIN FREQUENCY FOLDBACK MONITOR Frequency Foldback Threshold VIN rising VIN falling VFLDUP VFLDDN Frequency Foldback Hysteresis VFLDHY VFB = 0.63 V 18.4 18 0.2 1. Not tested in production. Limits are guaranteed by design. www.onsemi.com 5 20 19.8 0.3 0.4 V V NCV890201 ELECTRICAL CHARACTERISTICS (VIN = 4.5 V to 28 V, VEN = 5 V, VBST = VSW + 3.0 V, CDRV = 0.1 mF, Min/Max values are valid for the temperature range −40°C ≤ TJ ≤ 150°C unless noted otherwise, and are guaranteed by test, design or statistical correlation.) Parameter Symbol Conditions Min SYNCO Output Pulse Duty Ratio D(SYNC) CLOAD = 40 pF 40 SYNCO Output Pulse Falltime tR(SYNC) CLOAD = 40 pF, 90% to 10% SYNCO Output Pulse Risetime tF(SYNC) CLOAD = 40 pF, 10% to 90% SYNCI Input Resistance to ground RH(SYNC) VSYNCI = 5.0 V SYNCI Input High Threshold Voltage VHSYNC SYNCI Input Low Threshold Voltage VLSYNC SYNCI High Pulse Width tHSYNCI SYNCI Low Pulse Width tLSYNCI Typ Max Unit 60 % SYNCHRONIZATION 4 ns 4 50 ns 200 k 2.0 V 0.8 V VSYNC > max VHSYNC 40 ns VSYNC < min VLSYNC 40 ns External Sync Frequency FSYNCI Master Reassertion Time tI(SYNC) Time from last rising SYNCI edge to first un−synchronized turn−on. 1.8 Sramp Sramp(HV) 4.5 < VIN < 18 V 20 V < VIN < 28 V ON Resistance RDSON Leakage current VIN to SW 2.5 650 MHz ns SLOPE COMPENSATION 1.3 0.6 A/ms VBST = VSW + 3.0 V 650 mW ILKSW VEN = 0 V, VSW = 0, VIN = 18 V 10 mA Minimum ON Time tONMIN Measured at SW pin 70 ns Minimum OFF Time tOFFMIN Measured at SW pin At FSW = 2 MHz (normal) At FSW = 500 kHz (max duty cycle) Ramp Slope (Note 1) (With respect to switch current) 0.7 0.25 POWER SWITCH 45 ns 30 30 50 70 2.2 2.45 2.7 A 400 200 24 500 250 32 600 300 40 kHz VDRV 3.1 3.3 3.5 V DRV POR Start Threshold VDRVSTT 2.7 2.9 3.05 V DRV POR Stop Threshold VDRVSTP 2.5 2.8 3.0 V 45 mA 50 mV PEAK CURRENT LIMIT Current Limit Threshold ILIM SHORT CIRCUIT FREQUENCY FOLDBACK Lowest Foldback Frequency Lowest Foldback Frequency − High Vin Hiccup Mode FSWAF FSWAFHV FSWHIC VFB = 0 V, 4.5 V < VIN < 18 V VFB = 0 V, 20 V < VIN < 28 V VFB = 0 V GATE VOLTAGE SUPPLY (DRV pin) Output Voltage DRV Current Limit IDRVLIM VDRV = 0 V 16 OUTPUT PRECHARGE DETECTOR VSSEN 20 Activation Temperature (Note 1) TSD 150 190 °C Hysteresis (Note 1) THYS 5 20 °C Threshold Voltage 35 THERMAL SHUTDOWN 1. Not tested in production. Limits are guaranteed by design. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 6 NCV890201 VIN = 13.2 V 7 6 5 4 3 2 1 0 −50 −25 0 25 50 75 100 125 IqEN. ENABLED QUIESCENT CURRENT (mA) 8 150 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 −50 25 50 75 100 125 Figure 5. Enabled Quiescent Current vs. Junction Temperature 4.5 4.4 4.3 4.2 4.1 4.0 −25 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) 150 4.5 4.4 4.3 4.2 4.1 4.0 3.9 3.8 3.7 −50 −25 VFBR. FB REGULATION VOLTAGE (V) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) 150 Figure 7. UVLO Stop Threshold vs. Junction Temperature 2.4 −25 150 4.6 Figure 6. UVLO Start Threshold vs. Junction Temperature tSS. SOFT−START DURATION (ms) 0 Figure 4. Shutdown Quiescent Current vs. Junction Temperature 4.6 0.6 −50 −25 TJ. JUNCTION TEMPERATURE (°C) 4.7 3.9 −50 2.6 TJ. JUNCTION TEMPERATURE (°C) VUVLSTP. UVLO STOP THRESHOLD (V) VUVLSTT. UVLO START THRESHOLD (V) IqSD. SHUTDOWN QUIESCENT CURRENT (mA) TYPICAL CHARACTERISTICS CURVES 150 0.85 0.84 0.83 0.82 0.81 0.80 0.79 0.78 0.77 0.76 0.75 −50 −25 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) TJ. JUNCTION TEMPERATURE (°C) Figure 8. Soft−Start Duration vs. Junction Temperature Figure 9. FB Regulation Voltage vs. Junction Temperature www.onsemi.com 7 150 NCV890201 TYPICAL CHARACTERISTICS CURVES 100 1.2 1.0 VIN = 4.5 V 0.8 0.6 VIN = 28 V 0.4 0.2 −50 −25 0 25 50 75 100 125 70 60 50 VIN = 28 V 40 30 20 −50 −25 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) TJ. JUNCTION TEMPERATURE (°C) Figure 10. Error Amplifier Transconductance vs. Junction Temperature Figure 11. Error Amplifier Max Sourcing Current vs. Junction Temperature FSW. OSCILLATOR FREQENCY (MHz) 90 VIN = 4.5 V 80 70 60 50 VIN = 28 V 40 30 20 −50 −25 0 25 50 75 100 125 150 VIN = 13.2 V 2.0 1.8 1.6 1.4 1.2 VIN = 28 V 1.0 0.8 −50 −25 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) TJ. JUNCTION TEMPERATURE (°C) Figure 12. Error Amplifier Max Sinking Current vs. Junction Temperature Figure 13. Oscillator Frequency vs. Junction Temperature 19.6 56 19.4 55 19.2 VFLDUP 19.0 VFLDDN 18.8 18.6 18.4 18.2 −50 −25 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) 150 150 54 53 52 51 50 49 48 −50 Figure 14. Rising Frequency Foldback Threshold vs. Junction Temperature −25 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) Figure 15. SYNCO Pulse Duty Ratio vs. Junction Temperature www.onsemi.com 8 150 2.2 D(SYNC). SYNCO PULSE DUTY RATIO (%) ISINK. ERROR AMPLIFIER SINKING CURRENT (mA) VIN = 4.5 V 80 150 100 VFLDUP. VFLDDN, FREQ. FOLDBACK THRESHOLD (V) 90 ISOURCE. ERROR AMPLIFIER SOURCING CURRENT (mA) gm. ERROR AMPLIFIER TRANSCONDUCTANCE (mS) 1.4 150 NCV890201 TYPICAL CHARACTERISTICS CURVES 900 RDS(on). POWER SWITCH ON RESISTANCE (mW) RH(SYNC). SYNCI INPUT RESISTANCE (kW) 160 140 120 100 80 60 40 −50 −25 0 25 50 75 100 125 800 700 600 500 400 300 200 100 0 −50 150 −25 TJ. JUNCTION TEMPERATURE (°C) 80 75 75 70 70 65 60 55 50 45 40 −50 −25 0 25 50 75 100 125 150 60 55 50 45 40 35 −50 −25 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) Figure 18. Minimum On Time vs. Junction Temperature Figure 19. Minimum Off Time vs. Junction Temperature 150 600 2.80 FSWAF. FOLDBACK MODE SWITCHING FREQUENCY (kHz) ILIM, PEAK CURRENT LIMIT (A) 65 TJ. JUNCTION TEMPERATURE (°C) 2.90 2.70 2.60 2.50 2.40 2.30 2.20 2.10 2.00 −50 15 0 Figure 17. Power Switch RDS(on) vs. Junction Temperature tOFFMIN. MINIMUM TIME (ns) tONMIN. MINIMUM TIME (ns) Figure 16. SYNCI Input Resistance vs. Junction Temperature 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) −25 0 25 50 75 100 125 150 VIN = 4.5 V 550 500 450 400 350 300 VIN = 28 V 250 200 −50 −25 0 25 50 75 100 125 150 TJ. JUNCTION TEMPERATURE (°C) TJ. JUNCTION TEMPERATURE (°C) Figure 20. Current Limit Threshold vs. Junction Temperature Figure 21. Short−Circuit Foldback Frequency vs. Junction Temperature www.onsemi.com 9 NCV890201 40 3.50 38 3.45 VDRV. DRV VOLTAGE (V) FSWHC. HICCUP MODE FREUQNCY (kHz) TYPICAL CHARACTERISTICS CURVES 36 34 32 30 28 3.35 IDRV = 0 mA 3.30 IDRV = 16 mA 3.25 3.20 3.15 26 24 −50 −25 0 25 50 75 100 125 3.10 −50 150 −25 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) TJ. JUNCTION TEMPERATURE (°C) Figure 22. Hiccup Mode Switching Frequency vs. Junction Temperature Figure 23. DRV Voltage vs. Junction Temperature 3.1 150 IDRVLIM. DRV CURRENT LIMIT (mA) 30 3.0 2.9 VDRVSTT 2.8 VDRVSTP 2.7 2.6 2.5 −50 −25 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) 150 29 28 27 26 25 24 23 22 21 −50 Figure 24. DRV Reset Threshold vs. Junction Temperature −25 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) Figure 25. DRV Current Limit vs. Junction Temperature 55 VSSEN. OUTPUT PRECHARGE DETECTOR THRESHOLD (V) VDRVSTT. VDRVSTP, DRV RESET THRESHOLDS (V) 3.40 50 45 40 35 30 25 20 −50 −25 0 25 50 75 100 125 TJ. JUNCTION TEMPERATURE (°C) Figure 26. Output Precharge Detector Threshold vs. Junction Temperature www.onsemi.com 10 150 150 NCV890201 GENERAL INFORMATION INPUT VOLTAGE SLOPE COMPENSATION An Undervoltage Lockout (UVLO) circuit monitors the input, and inhibits switching and resets the Soft−start circuit if there is insufficient voltage for proper regulation. The NCV890201 can regulate a 3.3 V output with input voltages above 4.5 V and a 5.0 V output with an input above 6.5 V. The NCV890201 withstands input voltages up to 40 V. To limit the power lost in generating the drive voltage for the Power Switch, the switching frequency is reduced by a factor of 2 when the input voltage exceeds the VIN Frequency Foldback threshold VFLDUP (see Figure 27). Frequency reduction is automatically terminated when the input voltage drops back below the VIN Frequency Foldback threshold VFLDDN. A fixed slope compensation signal is generated internally and added to the sensed current to avoid increased output voltage ripple due to bifurcation of inductor ripple current at duty cycles above 50%. The fixed amplitude of the slope compensation signal requires the inductor to be greater than a minimum value, depending on output voltage, in order to avoid sub−harmonic oscillations. For 3.3 V and 5 V output voltages, the recommended inductor value is 4.7 mH. SHORT CIRCUIT FREQUENCY FOLDBACK During severe output overloads or short circuits, the NCV890201 automatically reduces its switching frequency. This creates duty cycles small enough to limit the peak current in the power components, while maintaining the ability to automatically reestablish the output voltage if the overload is removed. If the current is still too high after the switching frequency folds back to 500 kHz, the regulator enters an auto−recovery burst mode that further reduces the dissipated power. Fsw (MHz) 2 CURRENT LIMITING Due to the ripple on the inductor current, the average output current of a buck converter is lower than the peak current setpoint of the regulator. Figure 28 shows − for a 4.7 mH inductor − how the variation of inductor peak current with input voltage affects the maximum DC current the NCV890201 can deliver to a load. 1 4 18 20 36 VIN (V) 2.3 MINIMUM CURRENT LIMIT (A) Figure 27. NCV890201 Switching Frequency Reduction at High Input Voltage ENABLE The NCV890201 is designed to accept either a logic level signal or battery voltage as an Enable signal. EN low induces a ’sleep mode’ which shuts off the regulator and minimizes its supply current to a couple of mA typically (IqSD) by disabling all functions. Upon enabling, voltage is established at the DRV pin, followed by a soft−start of the switching regulator output. 2.2 (3.3 VOUT) 2.1 (5 VOUT) 2.0 1.9 1.8 1.7 1.6 0 5 SOFT−START 10 15 20 25 30 35 40 INPUT VOLTAGE (V) Upon being enabled or released from a fault condition, and after the DRV voltage is established, a soft−start circuit ramps the switching regulator error amplifier reference voltage to the final value. During soft−start, the average switching frequency is lower than its normal mode value (typically 2 MHz) until the output voltage approaches regulation. Figure 28. NCV890201 Load Current Capability with 4.7 mH Inductor www.onsemi.com 11 NCV890201 SYNCHRONIZATION does not arrive at the SYNCI pin within the Master Reassertion Time, the NCV890201 controls its own switching frequency, allowing uninterrupted operation in the event that the clock (or controlling NCV890201) is turned off. If internal conditions or excessive input voltage cause an NCV890201 to fold back its switching frequency, the main oscillator switching frequency is no longer derived from the frequency received at the SYNCI pin. Under these conditions, the SYNCO pin is held low. An external pulldown resistor is not required at the SYNCI pin if it is unconnected. Two NCV890201 can be synchronized out−of−phase to one another by connecting the SYNCO pin of one to the SYNCI pin of the other (Figure 29). Any number of NCV890201 can also be synchronized to an external clock (Figure 30). If a part does not have its switching frequency controlled by the SYNCI input, it drives the SYNCO pin low when it turns on the power switch, and drives it high half a switching period later. When the switching frequency is controlled by the SYNCI input, the SYNCO pin is held low. Synchronization starts within 2 ms of soft−start completion. A rising edge at the SYNCI pin causes an NCV890201 to immediately turn on the power switch. If another rising edge VIN CDRV1 CDRV2 DBST2 NCV890201 1 VIN CIN2 2 DRV 3 SYNCO 4 GND EN2 L2 SW 10 DBST1 NCV890201 CBST2 BST 9 DFW2 RFB1 SYNCI 8 CIN1 VOUT2 1 VIN SW 10 CBST 1 2 DRV COUT2 3 SYNCO BST 9 FB 7 RFB1 FB 7 COMP 6 5 EN VOUT1 COUT1 DFW1 SYNCI 8 4 GND Synchronization L1 RFB2 RCOMP1 5 EN RFB2 COMP 6 SYNC MASTER CCOMP1 RCOMP2 SYNC SLAVE CCOMP2 Figure 29. NCV890201s Synchronized to Each Other Master Enabled by Battery VIN CDRV1 DBST2 NCV890201 1 VIN CIN2 2 DRV 3 SYNCO 4 GND EN2 SW 10 BST 9 DBST1 NCV890201 CDRV 2 L2 CIN1 VOUT2 2 DRV CBST2 DFW2RFB21 1 VIN COUT2 3 SYNCO SYNCI 8 4 GND FB 7 BST 9 SYNCI 8 DFW1 RFB11 FB 7 COMP 6 5 EN L1 SW 10 CBST 1 RFB12 RCOMP1 5 EN COMP 6 RFB22 CCOMP1 RCOMP2 Synchronization CCOMP2 CLK Figure 30. Both NCV890201s Synchronized to External Clock #1 Enabled by Battery www.onsemi.com 12 VOUT1 COUT1 NCV890201 BOOTSTRAP In order for the bootstrap capacitor to stay charged, the Switch node needs to be pulled down to ground regularly. In very light load condition, the NCV890201 skips switching cycles to ensure the output voltage stays regulated. When the skip cycle repetition frequency gets too low, the bootstrap voltage collapses and the regulator stops switching. Practically, this means that the NCV890201 needs a minimum load to operate correctly. Figure 31 shows the minimum current requirements for different input and output voltages. At the DRV pin an internal regulator provides a ground−referenced voltage to an external capacitor (CDRV), to allow fast recharge of the external bootstrap capacitor (CBST) used to supply power to the power switch gate driver. If the voltage at the DRV pin goes below the DRV UVLO Threshold VDRVSTP, switching is inhibited and the Soft−start circuit is reset, until the DRV pin voltage goes back up above VDRVSTT. 16 MINIMUM OUTPUT CURRENT (mA) MINIMUM OUTPUT CURRENT (mA) 50 40 L = 2.2 mH 30 20 L = 4.7 mH 10 0 4.2 5.2 6.2 7.2 8.2 9.2 8 6 4 L = 2.2 mH 2 0 4.2 4.7 5.2 5.7 6.2 Minimum Load 5 V Out Minimum Load 3.3 V Out 6.7 50 MINIMUM OUTPUT CURRENT (mA) MINIMUM OUTPUT CURRENT (mA) L = 4.7 mH 10 INPUT VOLTAGE (V) 18 16 14 12 10 L = 2.2 mH 8 L = 4.7 mH 4 2 0 12 INPUT VOLTAGE (V) 20 6 14 4.2 4.7 5.2 5.7 6.2 6.7 7.2 45 40 L = 2.2 mH 35 30 25 20 L = 4.7 mH 15 10 5 0 4.2 6.2 8.2 INPUT VOLTAGE (V) INPUT VOLTAGE (V) Minimum Load 3.7 V Out Minimum Load 5.5 V Out Figure 31. Minimum Load Current with Different Input and Output Voltages www.onsemi.com 13 10.2 7.2 NCV890201 OUTPUT PRECHARGE DETECTION EXPOSED PAD Prior to Soft−start, the FB pin is monitored to ensure the SW voltage is low enough to have charged the external bootstrap capacitor (CBST). If the FB pin is higher than VSSEN, restart is delayed until the output has discharged. The exposed pad (EPAD) on the back of the package must be electrically connected to the electrical ground (GND pin) for proper, noise−free operation. DESIGN METHODOLOGY The NCV890201 being a fixed−frequency regulator with the switching element integrated, is optimized for one value of inductor. This value is set to 4.7 mH, and the slope compensation is adjusted for this inductor. The only components left to be designed are the input and output capacitor and the freewheeling diode. Please refer to the design spreadsheet www.onsemi.com NCV890201 page that helps with the calculation. Output capacitor: The minimum output capacitor value can be calculated based on the specification for output voltage ripple: THERMAL SHUTDOWN A thermal shutdown circuit inhibits switching, resets the Soft−start circuit, and removes DRV voltage if internal temperature exceeds a safe level. Switching is automatically restored when temperature returns to a safe level. Figure 32 shows the IC starts to switch after the voltage on FB pin reaches VSSEN, even the EN pin is high. After the IC is switching, the FB pin follows the soft starts reference to reach the final set point. EN C OUT min + DI L 8 @ DV OUT @ F SW With Time − DIL the inductor ripple current: FB ǒ V OUT @ 1 * VSSEN DI L + Time V Ǔ OUT V IN (eq. 2) L @ F SW − DVOUT the desired voltage ripple. However, the ESR of the output capacitor also contributes to the output voltage ripple, so to comply with the requirement, the ESR cannot exceed RESRmax: SW Figure 32. Output Voltage Detection (eq. 1) R ESR max + Time DV OUT @ L @ F SW ǒ V OUT 1 * V Ǔ OUT V IN (eq. 3) Finally, the output capacitor must be able to sustain the ac current (or RMS ripple current): MINIMUM DROPOUT VOLTAGE When operating at low input voltages, two parameters play a major role in imposing a minimum voltage drop across the regulator: the minimum off time (that sets the maximum duty cycle), and the on state resistance. When operating in continuous conduction mode (CCM), the output voltage is equal to the input voltage multiplied by the duty ratio. Because the NCV890201 needs a sufficient bootstrap voltage to operate, its duty cycle cannot be 100%: it needs a minimum off time (tOFFmin) to periodically re−fuel the bootstrap capacitor CBST. This imposes a maximum duty ratio DMAX = 1 − tOFFmin.FSW(min), with the switching frequency being folded back down to FSW(min) = 500 kHz to keep regulating at the lowest input voltage possible. The drop due to the on−state resistance is simply the voltage drop across the Switch resistance RDSON at the given output current: VSWdrop = IOUT.RDSon. Which leads to the maximum output voltage in low Vin condition: VOUT = DMAX.VIN(min) − VSWdrop I OUTac + DI L 2 Ǹ3 (eq. 4) Typically, with the recommended 4.7 mH inductor, two ceramic capacitors of 10 mF each in parallel give very good results. Freewheeling diode: The diode must be chosen according to its maximum current and voltage ratings, and to thermal considerations. As far as max ratings are concerned, the maximum reverse voltage the diode sees is the maximum input voltage (with some margin in case of ringing on the Switch node), and the maximum forward current the peak current limit of the NCV890201, ILIM. The power dissipated in the diode is PDloss: ǒ P Dloss + I OUT @ 1 * www.onsemi.com 14 Ǔ V OUT V IN @ V F ) I DRMS @ R D (eq. 5) NCV890201 with: − IOUT the average (dc) output current − VF the forward voltage of the diode − IDRMS the RMS current in the diode: I DRMS + Ǹ ǒ (1 * D) I OUT 2 ) DI L 12 Ǔ It can be designed in combination with an inductor to build an input filter to filter out the ripple current in the source, in order to reduce EMI conducted emissions. For example, using a 4.7 mH input capacitor, it is easy to calculate that an inductor of 200 nH will ensure that the input filter has a cut−off frequency below 200 kHz (low enough to attenuate the 2 MHz ripple). 2 (eq. 6) − RD the dynamic resistance of the diode (extracted from the V/I curve of the diode in its datasheet). Then, knowing the thermal resistance of the package and the amount of heatsinking on the PCB, the temperature rise corresponding to this power dissipation can be estimated. Error Amplifier and Loop Transfer Function The error amplifier is a transconductance type amplifier. The output voltage of the error amplifier controls the peak inductor current at which the power switch shuts off. The Current Mode control method employed allows the use of a simple, type II compensation to optimize the dynamic response according to system requirements. Figure 33 shows the error amplifier with the compensation components and the voltage feedback divider. Input capacitor: The input capacitor must sustain the RMS input ripple current IINac: I INac + DI L VOUT 2 ǸD3 (eq. 7) RFB1 VCOMP VFB V RCOMP RFB2 Cp gm * V RO CCOMP Vref Figure 33. Feedback Compensator Network Model The transfer function from VOUT to VCOMP is the product of the feedback voltage divider and the error amplifier. RFB2 RFB1 ) RFB2 s 1 ) wz Gerr amp(s) + gm @ Ro @ 1) s 1) s wpl wph Gdivider(s) + ǒ Ǔǒ Ǔ 1 RCOMP @ CCOMP 1 wpl + Ro @ CCOMP wz + (eq. 8) wph + (eq. 9) (eq. 10) (eq. 11) 1 RCOMP @ Cp (eq. 12) The output resistor Ro of the error amplifier is 1.4 MW and gm is 1 mA/V. The capacitor Cp is for rejecting noise at high frequency and is integrated inside the IC with a value of 18 pF. The power stage transfer function (from Vcomp to output) is shown below: s 1 ) wz 1 Gps(s) + Rload @ @ @ Fh(s) (eq. 13) Ri s 1 ) Rload@Tsw @ [Mc @ (1 * D) * 0.5] 1 ) L wp ǒ www.onsemi.com 15 Ǔ wz + 1 Resr @ Cout wp + Mc @ (1 * D) * 0.5 1 (eq. 15) ) L @ Cout @ Fsw Rload @ Cout (eq. 14) NCV890201 where Mc + 1 ) Se Sn Vin * Vout @ Ri Sn + L The bode plots of the open loop transfer function will show the gain and phase margin of the system. The compensation network is designed to make sure the system has enough phase margin and bandwidth. (eq. 16) (eq. 17) Ri represents the equivalent sensing resistor which has a value of 0.183 W, Se is the compensation slope which is 183 kV/S, Sn is the slope of the sensing resistor current during on time. Fh(s) represents the sampling effect from the current loop which has two poles at one half of the switching frequency: 1 2 s ) s wn@Qp wn 2 wn + p @ Fsw Fh(s) + Qp + Design of the Compensation Network The function of the compensation network is to provide enough phase margin at crossover frequency to stabilize the system as well as to provide high gain at low frequency to eliminate the steady state error of the output voltage. Please refer to the design spreadsheet www.onsemi.com NCV890201 page that helps with the calculation. The design steps will be introduced through an example. Example: Vin = 15.5 V, Vout = 3.3 V, Rload = 1.65 W, Iout = 2 A, L = 4.7 mH, Cout = 20 mF (Resr = 7 mW) The reference voltage of the feedback signal is 0.8 V and to meet the minimum load requirements, select RFB1 = 100 W, RFB2 = 31.6 W. From the specification, the power stage transfer function can be plotted as below: (eq. 18) 1) 1 p @ [Mc @ (1 * D) * 0.5] (eq. 19) The total loop transfer function is the product of power stage and feedback compensation network. (dB) Gloop(s) + Gdivider(s) @ Gerr amp(s) @ Gps(s) (eq. 20) 20 x log ⎣ Gps ⎣f ( m)⎦ ⎦ 90 180 45 90 0 0 − 45 − 90 100 arg (Gps (f m)) x 180 p − 90 3 4 1⋅ 10 − 180 6 1⋅ 10 5 1⋅ 10 fm 1⋅ 10 (Hz) Figure 34. Power Stage Bode Plots The crossover frequency is chosen to be Fc = 70 kHz, the power stage gain at this frequency is −4 dB (0.634) from calculation. Then the gain of the feedback compensation network must be 4 dB. Next is to decide the locations of one zero and one pole of the compensator. The zero is to provide phase boost at the crossover frequency and the pole is to reject the noise of high frequency. In this example, a zero is placed at 1/10 of the crossover frequency and a pole is placed at 1/5 of the switching frequency (Fsw = 2 MHz): Fz = 7000 Hz, Fp = 400000 Hz, RCOMP, CCOMP and Cp can be calculated from the following equations: RCOMP + Fp @ gm @ Vout @ (Fp * Fz) @ |Gps(Fc)| Vref CCOMP + Cp + Ǹ ǒ Ǔ 1 ) Fc Fp Ǹ 1 2p @ Fz @ RCOMP 1 2p @ Fp @ RCOMP (eq. 21) ǒ Ǔ 1 ) Fz Fc 2 2 (eq. 22) (eq. 23) Note: there is an 18 pF capacitor at the output of the OTA integrated in the IC, and if a larger capacitor needs to be used, subtract this value from the calculated Cp. Figure 35 shows Cp is split into two capacitors. Cint is the 18 pF in the IC. Cext is the extra capacitor added outside the IC. www.onsemi.com 16 NCV890201 From the calculation: RCOMP = 6.6 KW, CCOMP = 3.4 nF, Cp = 48 pF So the feedback compensation network is as below: VOUT RFB1 100 W VCOMP VFB V RFB2 31.6 W gm*V Vref 0.8 V RCOMP 6.6 KW 18 pF Cint RO CCOMP 30 pF Cext 3.4 nF Figure 35. Example of the Feedback Compensation Network (dB) Figure 36 shows the bode plot of the OTA compensator 20 x log ⎣ Gerr_amp ⎣f ( m )⎦ ⎦ 90 180 45 90 0 0 − 45 − 90 100 arg (Gerr_amp (f m )) x 180 p − 90 1 ⋅ 10 3 1 ⋅ 10 4 1 ⋅ 10 − 180 6 1 ⋅ 10 5 fm (Hz) Figure 36. Bode Plot of the OTA Compensator (dB) The total loop bode plot is as below: 20 x log ⎣ Gloop ⎣f ( m )⎦ 90 180 45 90 arg(Gloop (f m ))‧ ⎦ 0 0 − 45 − 90 − 90 100 3 1⋅ 10 4 1⋅ 10 fm (Hz) Figure 37. Bode Plot of the Total Loop The crossover frequency is at 70 KHz and phase margin is 75 degrees. www.onsemi.com 17 5 1⋅ 10 − 180 6 1⋅ 10 180 p NCV890201 Freewheeling diode ³ inductor ³ Output capacitor ³ return through ground − Minimize the length of high impedance signals, and route them far away from the power loops: ♦ Feedback trace ♦ Comp trace PCB LAYOUT RECOMMENDATION ♦ As with any switching power supplies, there are some guidelines to follow to optimize the layout of the printed circuit board for the NCV890201. However, because of the high switching frequency extra care has to be taken. − Minimize the area of the power current loops: ♦ Input capacitor ³ NCV890201 switch ³ Inductor ³ output capacitor ³ return through Ground ORDERING INFORMATION Device NCV890201MWTXG Package Shipping† DFN10 with wettable flanks (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 18 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN10, 3x3, 0.5P CASE 485C ISSUE F SCALE 2:1 DATE 16 DEC 2021 GENERIC MARKING DIAGRAM* XXXXX XXXXX ALYWG G XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot *This information is generic. Please refer to Y = Year device data sheet for actual part marking. W = Work Week Pb−Free indicator, “G” or microdot “G”, may G = Pb−Free Package or may not be present. Some products may (Note: Microdot may be in either location) not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON03161D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN10, 3X3 MM, 0.5 MM PITCH PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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