NDD03N80Z
N‐Channel Power MOSFET
800 V, 4.5 W
Features
•
•
•
•
ESD Diode−Protected Gate
100% Avalanche Tested
100% Rg Tested
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
800 V
4.5 W @ 10 V
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VDSS
800
V
Continuous Drain Current RqJC
ID
2.9
A
Continuous Drain Current
RqJC, TA = 100°C
ID
1.9
A
Pulsed Drain Current, VGS @ 10 V
IDM
12
A
Power Dissipation RqJC
PD
96
W
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche Energy, ID = 2.5 A
EAS
100
mJ
ESD (HBM) (JESD22−A114)
Vesd
2300
V
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, TA = 25°C)
VISO
4500
V
Peak Diode Recovery (Note 1)
dv/dt
4.5
V/ns
IS
3.3
A
Drain−to−Source Voltage
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
TL
260
°C
TJ, Tstg
−55 to 150
°C
G (1)
S (3)
4
4
1 2
2
3
NDD03N80Z−1G
IPAK
CASE 369D
3
NDD03N80ZT4G
DPAK
CASE 369AA
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1. IS = 3.3 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
October, 2013 − Rev. 2
D (2)
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
N-Channel
1
Publication Order Number:
NDD03N80Z/D
NDD03N80Z
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
NDD03N80Z
RqJC
1.3
°C/W
(Note 3) NDD03N80Z
(Note 2) NDD03N80Z−1
RqJA
33
96
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
2. Insertion mounted
3. Surface mounted on FR4 board using 1” sq. pad size (Cu area = 1.127” sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Min
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1 mA
800
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Reference to 25°C, ID = 1 mA
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Leakage Current
Gate-to-Source Leakage Current
IDSS
VDS = 800 V, VGS = 0 V
IGSS
V
870
mV/°C
TJ = 25°C
1.0
TJ = 125°C
50
VGS = ±20 V
±10
mA
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Static Drain-to-Source On Resistance
Forward Transconductance
VGS(TH)
VDS = VGS, ID = 50 mA
VGS(TH)/TJ
Reference to 25°C, ID = 50 mA
3.0
4.1
11
4.5
V
RDS(ON)
VGS = 10 V, ID = 1.2 A
3.7
gFS
VDS = 15 V, ID = 1.2 A
2.1
S
440
pF
mV/°C
4.5
W
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
Ciss
Output Capacitance (Note 5)
Coss
Reverse Transfer Capacitance
(Note 5)
Crss
Total Gate Charge (Note 5)
Qg
VDS = 25 V, VGS = 0 V, f = 1 MHz
52
9.0
nC
17
Gate-to-Source Charge (Note 5)
Qgs
Gate-to-Drain (“Miller”) Charge
(Note 5)
Qgd
3.5
Plateau Voltage
VGP
6.5
V
Gate Resistance
Rg
5.5
W
9.0
ns
VDS = 400 V, ID = 3.3 A, VGS = 10 V
9.1
RESISTIVE SWITCHING CHARACTERISTICS (Note 6)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
td(on)
tr
td(off)
VDD = 400 V, ID = 3.3 A,
VGS = 10 V, RG = 0 W
tf
7.0
17
9.0
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
Qrr
IS = 3.0 A, VGS = 0 V
TJ = 25°C
TJ = 100°C
0.9
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2
ns
81
280
1.3
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
5. Guaranteed by design.
6. Switching characteristics are independent of operating junction temperatures.
V
0.8
360
VGS = 0 V, VDD = 30 V
IS = 3.3 A, di/dt = 100 A/ms
1.6
mC
NDD03N80Z
TYPICAL CHARACTERISTICS
3.0
VGS = 6.8 V to 10 V
2.5
VDS = 25 V
6.4 V
2.0
6.2 V
1.5
6.0 V
1.0
5.8 V
5.0 V
0.5
0.0
0
5.2 V
5.6 V
5.4 V
5
10
15
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = −55°C
3.0
TJ = 150°C
2.0
1.0
0.0
25
1
ID = 1.2 A
TJ = 25°C
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
7.0
6.5
VGS = 10 V
TJ = 25°C
5.5
5.0
4.5
4.0
3.5
3.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
ID, DRAIN CURRENT (A)
1.15
BVDSS, NORMALIZED BREAKDOWN
VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
10
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
2.75
2.25
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
6.0
Figure 3. On−Region versus Gate−to−Source
Voltage
2.50
2
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
12
TJ = 25°C
4.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
5.0
6.6 V
ID = 1.2 A
VGS = 10 V
1.10
2.00
1.05
1.75
1.50
1.00
1.25
1.00
0.95
0.75
0.50
0.25
−50
ID = 1 mA
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
0.90
−50
Figure 5. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 6. BVDSS Variation with Temperature
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3
NDD03N80Z
TYPICAL CHARACTERISTICS
10000
C, CAPACITANCE (pF)
TJ = 150°C
1.0
TJ = 125°C
0.1
0
50
1000
Ciss
Coss
100
Crss
10
1
100 150 200 250 300 350 400 450 500
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
VGS = 0 V
f = 1 MHz
1
Figure 7. Drain−to−Source Leakage Current
versus Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V)
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
Figure 8. Capacitance Variation
450
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (mA)
10.0
400
VDS
350
VGS
QGS
QGD
300
250
200
150
VDS = 400 V
ID = 3.3 A
TJ = 25°C
0
2
4
6
8
10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
18
100
50
0
20
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
100
VDD = 400 V
ID = 3 A
VGS = 10 V
100
IS, SOURCE CURRENT (A)
t, TIME (ns)
1000
td(off)
tr
tf
td(on)
10
1.0
1
10
RG, GATE RESISTANCE (W)
10
1.0
0.1
0.3
100
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
TJ = 150°C
125°C
25°C
−55°C
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
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4
1.2
NDD03N80Z
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
100
10
VGS ≤ 30 V
SINGLE PULSE
TC = 25°C
100 ms 10 ms
1 ms
10 ms
dc
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
10
R(t) (C/W)
1
50% (DUTY CYCLE)
20%
10%
0.1 5.0%
2.0%
RqJC = 1.3°C/W
Steady State
1.0%
0.01
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case)
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5
10
100
1000
NDD03N80Z
Table 1. ORDERING INFORMATION
Package
Shipping†
NDD03N80Z−1G
IPAK
(Pb-Free, Halogen-Free)
75 Units / Rail
NDD03N80ZT4G
DPAK
(Pb-Free, Halogen-Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
4
Drain
YWW
3N
80ZG
YWW
3N
80ZG
4
Drain
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
IPAK
A
Y
WW
G, H
DPAK
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
SCALE 1:1
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
DATE 15 DEC 2010
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
T
MARKING
DIAGRAMS
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
Discrete
YWW
xxxxxxxx
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
xxxxxxxxx
A
lL
Y
WW
DOCUMENT NUMBER:
DESCRIPTION:
98AON10528D
Integrated
Circuits
xxxxx
ALYWW
x
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
IPAK (DPAK INSERTION MOUNT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
4
1 2
DATE 03 JUN 2010
3
SCALE 1:1
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
2
b2
H
DETAIL A
3
c
b
0.005 (0.13)
e
M
H
C
L2
GAUGE
PLANE
C
L
L1
DETAIL A
A1
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
YWW
XXX
XXXXXG
IC
Discrete
XXXXXX
A
L
Y
WW
G
6.17
0.243
SCALE 3:1
SEATING
PLANE
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13126D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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