NHP120SFT3G

Ultrafast Power Rectifier, Surface Mount Plastic SOD−123FL Package NHP120SF, NRVHP120SF This SOD−123FL ultrafast rectifier provides fast switching performance with soft recovery in a compact thermally efficient package. Its compact footprint makes it ideally suited to portable and automotive applications where board space is at a premium. Its low profile makes it a good option for flat panel display and other applications with limited vertical clearance. The device offers low leakage over temperature making it a good match for applications requiring low quiescent current. www.onsemi.com ULTRAFAST RECTIFIER 1.0 AMPERES 200 VOLTS Features • • • • • Fast Soft Switching for Reduced EMI and Higher Efficiency Low Profile − Maximum Height of 1.0 mm Small Footprint − Footprint Area of 5.94 mm2 NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOD−123FL CASE 498 MARKING DIAGRAM P12MG G Mechanical Characteristics: • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 11.7 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds MSL 1 Applications • Instrumentation • Output Rectification in Switching Power Supplies Including Mini Adaptors and Flat Panel Display • LED Lighting • Freewheeling Diode Where Space is at a Premium P12 M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NHP120SFT3G SOD−123 (Pb−Free) 10000 / Tape & Reel NRVHP120SFT3G SOD−123 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 April, 2020 − Rev. 1 1 Publication Order Number: NHP120SF/D NHP120SF, NRVHP120SF MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 200 V Average Rectified Forward Current (TL = 158°C) IO 1.0 A Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 155°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 30 A Tstg, TJ −65 to +175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Storage and Operating Junction Temperature Range (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 23 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 85 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 330 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 25°C) (IF = 1.0 A, TJ = 125°C) (IF = 2.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR Reverse Recovery Time IF = 1.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 25°C trr 25 ns Reverse Recovery Time IF = 1.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 50°C trr 50 ns EAS 10 mJ Maximum Non−Repetitive Avalanche Energy TJ = 25°C 1.0 1.1 0.85 0.95 0.5 25 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NHP120SF, NRVHP120SF TYPICAL CHARACTERISTICS 100 10 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C TA = 150°C TA = 125°C 1 0.1 TA = 25°C 0.01 TA = −40°C 0.1 0.3 0.5 0.7 0.9 1.1 1.3 TA = 125°C 0.1 TA = 25°C 0.4 0.2 0.6 1.0 0.8 1.2 Figure 2. Maximum Instantaneous Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) Figure 1. Typical Instantaneous Forward Characteristics 1.4 1.E−03 TA = 175°C 1.E−09 TA = 25°C 1.E−07 1.E−08 TA = −40°C 1.E−10 TA = 150°C 1.E−06 TA = 25°C 1.E−08 TA = 125°C 1.E−05 TA = 150°C 1.E−07 TA = 175°C 1.E−04 TA = 125°C 1.E−06 TA = −40°C 1.E−09 1.E−11 20 40 60 80 100 120 140 160 180 200 1.E−10 0 20 60 40 80 100 120 140 160 180 200 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics IF(AV), AVERAGE FORWARD CURRENT (A) 0 1000 TJ = 25°C 100 10 0 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−05 1.E−12 TA = −40°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−04 C, JUNCTION CAPACITANCE (pF) 1 0.001 1.5 1.E−03 1 TA = 175°C TA = 150°C 0.01 IR, INSTANTANEOUS REVERSE CURRENT (A) 0.001 10 20 40 60 80 100 120 140 160 180 200 2.0 DC 1.5 Square Wave 1.0 0.5 RqJC = 23°C/W 0 0 20 40 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating www.onsemi.com 3 160 180 NHP120SF, NRVHP120SF TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 3.0 IPK/IAV = 20 2.5 IPK/IAV = 10 TJ = 175°C 2.0 1.5 IPK/IAV = 5 1.0 DC 0.5 0 Square Wave 0 0.2 0.4 0.6 0.8 1.0 1.2 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 1000 R(t) (C/W) 100 10 50% (DUTY CYCLE) 25% 10% 5.0% 2.0% 1.0% 1.0 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 PULSE TIME (s) Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad) 100 50% (DUTY CYCLE) 25% R(t) (C/W) 10 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad) www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE D DATE 10 MAY 2013 SCALE 4:1 E D q 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. 2 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE SIDE VIEW 2X b INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° (Note: Microdot may be in either location) 4.20 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° XXX = Specific Device Code M = Date Code G = Pb−Free Package RECOMMENDED SOLDERING FOOTPRINT* 1.22 MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − XXXMG G L BOTTOM VIEW 2X MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° GENERIC MARKING DIAGRAM* c 2X A1 DIM A A1 b c D E L HE q *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2X ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11184D SOD−123FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative