NJVMJD243T4G

MJD243(NPN), MJD253(PNP) Complementary Silicon Plastic Power Transistors DPAK−3 for Surface Mount Applications www.onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Features • High DC Current Gain • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Low Collector−Emitter Saturation Voltage High Current−Gain − Bandwidth Product Annular Construction for Low Leakage Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Value Unit VCB 100 Vdc VCEO 100 Vdc VEB 7.0 Vdc IC 4.0 Adc 8.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 0.1 W W/°C Total Device Dissipation @ TA = 25°C (Note 2) Derate above 25°C PD 1.4 0.011 W W/°C TJ, Tstg −65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted on minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2013 September, 2016 − Rev. 17 COLLECTOR 2, 4 1 BASE 1 COLLECTOR 2, 4 1 BASE 3 EMITTER 3 EMITTER 4 4 1 Symbol ICM Collector Current − Peak COMPLEMENTARY 2 1 2 3 IPAK CASE 369D STYLE 1 3 DPAK−3 CASE 369C STYLE 1 MARKING DIAGRAMS AYWW J253G IPAK A Y WW x G AYWW J2x3G DPAK = Assembly Location = Year = Work Week = 4 or 5 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: MJD243/D MJD243 (NPN), MJD253 (PNP) THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Value RqJC RqJA 10 89.3 Min Max 100 − − − 100 100 − 100 40 15 180 − − − 0.3 0.6 − 1.8 − 1.5 40 − − 50 Unit °C/W Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 2) 2. When surface mounted on minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 3) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TJ = 125°C) ICBO Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO DC Current Gain (Note 3) (IC = 200 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE Collector−Emitter Saturation Voltage (Note 3) (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base−Emitter Saturation Voltage (Note 3) (IC = 2.0 Adc, IB = 200 mAdc) VBE(sat) Base−Emitter On Voltage (Note 3) (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) Vdc nAdc mAdc nAdc − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS fT Current−Gain − Bandwidth Product (Note 4) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MHz Cob pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = ⎪hFE⎪• ftest. www.onsemi.com 2 MJD243 (NPN), MJD253 (PNP) 10 IC, COLLECTOR CURRENT (AMPS) PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 1.5 15 TA (SURFACE MOUNT) 1 10 TC 0.5 100ms 1ms 2 1 5ms 0.5 0.2 0.02 0 0.01 25 T, TEMPERATURE (°C) 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Power Derating Figure 2. Active Region Maximum Safe Operating Area 50 75 100 125 150 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 1 100 The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 1 0.7 0.5 dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.1 0.05 5 0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 500ms 5 D = 0.5 0.2 0.1 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 Figure 3. Thermal Response www.onsemi.com 3 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 200 MJD243 (NPN), MJD253 (PNP) NPN MJD243 PNP MJD253 200 500 VCE = 1.0 V VCE = 2.0 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 300 200 TJ = 150°C 25°C 100 70 50 -55°C 30 20 10 7.0 5.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 25°C -55°C 30 20 10 7.0 5.0 3.0 2.0 0.04 0.06 4.0 VCE = 1.0 V VCE = 2.0 V TJ = 150°C 100 70 50 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 4. DC Current Gain 1.4 1.4 TJ = 25°C 1.2 1.2 1.0 1.0 0.8 0.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V IC/IB = 10 0.4 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 1.0 V 0.6 IC/IB = 10 0.4 5.0 5.0 0.2 0.2 VCE(sat) 0 0.04 0.06 0.1 VCE(sat) 0.2 0.4 0.6 1.0 2.0 0 0.04 0.06 4.0 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 -1.0 θV, TEMPERATURE COEFFICIENTS (mV/ °C) θV, TEMPERATURE COEFFICIENTS (mV/ °C) Figure 5. “On” Voltages 25°C to 150°C -1.5 -2.0 qVB FOR VBE -2.5 0.04 0.06 0.1 -55°C to 25°C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 +2.5 +2.0 *APPLIES FOR IC/IB ≤ hFE/3 +1.5 +1.0 +0.5 25°C to 150°C *qVC FOR VCE(sat) 0 -55°C to 25°C -0.5 -1.0 -1.5 25°C to 150°C qVB FOR VBE -2.5 0.04 0.06 4.0 -55°C to 25°C -2.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 6. Temperature Coefficients www.onsemi.com 4 2.0 4.0 MJD243 (NPN), MJD253 (PNP) VCC +30 V 1K RC 25 ms +11 V SCOPE RB t, TIME (ns) D1 51 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% tr 100 0 -9.0 V 500 300 200 -4 V 50 30 20 td 10 5 3 2 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES 1 0.01 NPN MJD243 PNP MJD253 0.02 0.03 0.05 0.1 1 2 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 10K VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 TJ = 25°C 100 C, CAPACITANCE (pF) ts 1K 500 300 200 100 Cib 70 50 30 Cob 20 tf MJD243 (NPN) MJD253 (PNP) NPN MJD243 PNP MJD253 0.2 0.3 0.5 1 2 0.02 0.03 0.05 0.1 IC, COLLECTOR CURRENT (AMPS) 3 5 10 1.0 10 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Turn−Off Time Figure 10. Capacitance 200 TJ = 25°C 100 C, CAPACITANCE (pF) t, TIME (ns) 5 200 5K 3K 2K 10 0.01 3 Figure 8. Turn−On Time Figure 7. Switching Time Test Circuit 50 30 20 VCC = 30 V IC/IB = 10 TJ = 25°C Cib 70 50 30 20 10 Cob 1 2 3 5 7 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance www.onsemi.com 5 50 70 100 50 70 100 MJD243 (NPN), MJD253 (PNP) ORDERING INFORMATION Package Type Package Shipping† MJD243G DPAK−3 (Pb−Free) 369C 75 Units / Rail MJD243T4G DPAK−3 (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD243T4G* DPAK−3 (Pb−Free) 369C 2,500 / Tape & Reel MJD253−1G IPAK (Pb−Free) 369D 75 Units / Rail MJD253T4G DPAK−3 (Pb−Free) 369C 2,500 / Tape & Reel NJVMJD253T4G* DPAK−3 (Pb−Free) 369C 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE C SCALE 1:1 C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G DATE 15 DEC 2010 H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− T MARKING DIAGRAMS STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE Discrete YWW xxxxxxxx STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR xxxxxxxxx A lL Y WW DOCUMENT NUMBER: DESCRIPTION: 98AON10528D Integrated Circuits xxxxx ALYWW x = Device Code = Assembly Location = Wafer Lot = Year = Work Week Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. IPAK (DPAK INSERTION MOUNT) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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