NL3S588MUTBG

NL3S588 USB 2.0-Capable Ultra-Low THD DPDT Switch The NL3S588 is a single supply, bidirectional, double−pole/ double−throw (DPDT) switch suitable for both hi−fidelity audio and high−speed data applications. The NL3S588 features ultra-low distortion, high OFF−Isolation analog switches that can pass analog signals that are positive and negative with respect to ground. It is targeted at consumer and professional DC−coupled GND−referenced audio switching applications such as computer sound cards and home theater products. The NL3S588 may also be used in high−speed differential data routing applications. Both channels are USB 2.0−compliant. MARKING DIAGRAM UQFN10 MU SUFFIX CASE 488AT 1 Features DPDT Switch 3.3 V Single Supply Operation Available in 1.4 mm x 1.8 mm UQFN10 This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant AX M G D− D+ EN 9 8 VDD GND 2 6 Dp0 3 4 5 Dp1 7 Dn0 1 (Top View) ORDERING INFORMATION Applications • Hi−Fi Audio Switching • USB 2.0 High−Speed Data Switching • USB 3.x Type C Switching September, 2017 − Rev. 2 10 SEL Input Signal Range: 0 V to VDD CON: 8.9 pF (Typ) Data Rate: USB 2.0–Compliant – up to 480 Mbps Bandwidth: 580 MHz © Semiconductor Components Industries, LLC, 2017 Device Code Date Code Pb−Free Device PIN ASSIGNMENT 2 VRMS Signal Switching −116 dB THD+N into 20 kW Load at 2 VRMS −112 dB THD+N into 32 W Load at 0.707 VRMS Signal to Noise Ratio: > 125 dBV ±0.004 dB Insertion Loss at 1 kHz, 20 kW Load ±0.0008 dB Gain Variation 20 Hz to 20 kHz 112 dB Signal Muting into 20 kW Load 131 dB PSRR 20 Hz to 20 kHz High−Speed Data Capabilities • • • • AX MG G (Note: Microdot may be in either location) Audio Capabilities • • • • • • • • = = = Dn1 • • • • www.onsemi.com Device Package Shipping† NL3S588MUTBG UQFN10 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 Publication Order Number: NL3S588/D NL3S588 VDD Dp0 D+ Dp1 Dn0 D− Dn1 EN SEL LOGIC CONTROL GND NL3S588 Figure 1. Block Diagram FUNCTION TABLE INPUTS NOTE: EN SEL Operating Mode 0 0 Dp0 connected to D+ / Dn0 connected to D− 0 1 Dp1 connected to D+ / Dn1 connected to D− 1 X Shutdown (I/Os Disconnected) EN Logic “0” ≤ 0.5 V, Logic “1” ≥ 1.4 V or float. SEL Logic “0” ≤ 0.5V, Logic “1” ≥ 1.4 V. X = Don’t Care PIN DESCRIPTIONS PIN NAME PIN SEL 1 Channel Select DESCRIPTION GND 2 Ground Dn1 3 Normally−Open I/O Dp1 5 Dn0 4 Dp0 6 VDD 7 System power supply pin (+3 V to +3.6 V) EN 8 Signal mute control pin D+ 9 Common I/O D− 10 Normally−Closed I/O www.onsemi.com 2 NL3S588 MAXIMUM RATINGS Symbol Rating Value Unit VDD Positive 3 V DC Supply Voltage −0.5 to +4.1 V VIS Analog Input/Output Voltage (D+, D−, Dpx, Dnx) −3.1 to VDD + 0.5 V VIN Digital Input Voltage (EN, SEL) −0.5 to VDD + 0.5 V IIO Switch Continuous Current (D+, D−, Dpx, Dnx) ±300 mA Switch Peak Current (D+, D−, Dpx, Dnx) (Pulsed 1 ms, 10% Duty Cycle, Max). ±500 mA PD Power Dissipation in Still Air 800 mW Ts Storage Temperature −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 seconds 260 °C TJ Junction Bias Under Bias 150 °C qJA Thermal Resistance 80 °C/W Ts Storage Temperature −65 to +150 °C IIO_PK MSL Moisture Sensitivity FR Flammability Rating ESD Level 1 Oxygen Index: 30% − 35% ESD Protection IL UL94−V0 (0.125 in) °C 3000 200 V ±300 mA Human Body Model Machine Model Latch−up Current, Above VCC and below GND at 125°C (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol VDD Parameter Min Max Unit Positive DC Supply Voltage 3.0 3.6 V VS Switch Input / Output Voltage (D+, D−, Dpx, Dnx) −2.9 VDD V VIN Digital Select Input Voltage (EN, SEL) GND VDD V TA Operating Temperature Range −40 +85 °C DC ELECTRICAL CHARACTERISTICS (Voltages referenced to GND): VDD = +3.0 V to +3.6 V, GND = 0 V, VS = 2 VRMS, RLOAD = 20 kW , f = 1 kHz, VSELH = VENH = 1.4 V, VSELL = VENL = 0.5 V, (Note 2), Unless otherwise specified. Parameter Test Conditions Supply (V) Temp (5C) Min (Notes 3, 4) Typ Max (Notes 3, 4) Units 3.3 Full − 2 − VRMS 25 − 2.1 − W Full − 2.5 − 25 − 0.046 − Full − 0.23 − 25 − 0.047 0.05 Full − 0.092 − ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON−Resistance, rON ID+ or ID− = 80mA, VDpx or VDnx = −2.828 V to +2.828 V (See Figure 5) 3.3 rON Matching Between Channels, DrON ID+ or ID− = 80mA, VDpx or VDnx = Voltage at max rON over −2.828 V to +2.828 V (Note 7) 3.3 rON Flatness, rFLAT(ON) ID+ or ID− = 80mA, VDpx or VDnx = −2.828 V, 0V, +2.828 V (Note 5) 3.3 W W 2. VIN = input voltage to perform proper function. 3. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 4. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. 5. Flatness is defined as the difference between maximum and minimum value of ON−resistance at the specified analog signal voltage points. 6. Limits established by characterization and are not production tested. 7. rON matching between channels is calculated by subtracting the channel with the highest max rON value from the channel with lowest max rON value. 8. Crosstalk is inversely proportional to source impedance. www.onsemi.com 3 NL3S588 DC ELECTRICAL CHARACTERISTICS (Voltages referenced to GND): VDD = +3.0 V to +3.6 V, GND = 0 V, VS = 2 VRMS, RLOAD = 20 kW , f = 1 kHz, VSELH = VENH = 1.4 V, VSELL = VENL = 0.5 V, (Note 2), Unless otherwise specified. Supply (V) Temp (5C) Min (Notes 3, 4) Typ Max (Notes 3, 4) Units 3.6 25 225 300 375 kW Full − 345 − 25 − < −116 − VS = 1.9 VRMS, f = 1 kHz, A−weighted filter, RLOAD = 20 kW 25 − < −116 − VS = 1.8 VRMS, f = 1 kHz, A−weighted filter, RLOAD = 20 kW 25 − < −116 − VS = 0.707 VRMS, f = 1 kHz, A−weighted filter, RLOAD = 32 W 25 − < −112 − Parameter Test Conditions ANALOG SWITCH CHARACTERISTICS D+, D−, Dpx, Dnx Pull− down Resistance VDpx or VDnx = −2.83 V, 2.83 V, VD+ or VD− = −2.83 V, 2.83 V, VEN = 3.6 V, measure current, calculate resistance. DYNAMIC CHARACTERISTICS THD+N VS = 2 VRMS, f = 1 kHz, A−weighted filter, RLOAD = 20 kW 3.3 dB SNR f = 20 Hz to 20 kHz, A−weighted filter, inputs grounded, RLOAD = 20 kW or 32 W 3.3 25 − > 125 − dBV Insertion Loss, GON f = 1 kHz, RLOAD = 20 kW 3.3 25 − ±0.004 − dB Gain vs Frequency, Gf f = 20 Hz to 20 kHz, RLOAD = 20 kW, reference to GON at 1 kHz 3.3 25 − ±0.0008 − dB Stereo Channel Imbalance Dp0 and Dn0, Dp1 and Dn1 f = 20 Hz to 20 kHz, RLOAD = 20 kW 3.3 25 − ±0.0001 − dB OFF−Isolation (Disabling) f = 20 Hz to 22 kHz, D+ = D− = 2 VRMS, RLOAD = 20 kW, = 3.3 V, SEL = “X” 3.3 25 − 112 − dB 25 − 129 − 25 − 102 − 25 − 129 − 25 − 131 − 25 − 133 − 3.3 25 − 580 − MHz 3.3 25 − 250 − ns f = 20 Hz to 22 kHz, VD+ or VD− = 0.7 VRMS, RLOAD = 32 W Crosstalk (Channel−to− Channel) 3.3 RL = 20 kW, f = 20 Hz to 20 kHz, VS = 2 VRMS, signal source impedance = 20 W, (Note 8) RL = 32 W, f = 20 Hz to 20 kHz, VS = 0.7 VRMS, signal source impedance = 20 W, (Note 8) PSRR 3.3 f = 1 kHz, VS = 100 mVRMS, inputs grounded f = 20 kHz, VS = 100 mVRMS, inputs grounded Bandwidth, −3 dB RLOAD = 50 W ON to Disable Time, TTRANS−OM dB dB Disable to ON Time, TTRANS−MO VIS = 1.5 V 3.3 25 − 1680 − ms Turn−ON Time, tON VDpx or VDnx = 1.5 V, VEN = 0 V, RL = 32 W (See Figure 2) 3.3 25 − 14 − ms Turn−OFF Time, tOFF VDpx or VDnx = 1.5 V, VEN = 0 V, RL = 32 W (See Figure 2) 3.3 25 − 95 − ns 2. VIN = input voltage to perform proper function. 3. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 4. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. 5. Flatness is defined as the difference between maximum and minimum value of ON−resistance at the specified analog signal voltage points. 6. Limits established by characterization and are not production tested. 7. rON matching between channels is calculated by subtracting the channel with the highest max rON value from the channel with lowest max rON value. 8. Crosstalk is inversely proportional to source impedance. www.onsemi.com 4 NL3S588 DC ELECTRICAL CHARACTERISTICS (Voltages referenced to GND): VDD = +3.0 V to +3.6 V, GND = 0 V, VS = 2 VRMS, RLOAD = 20 kW , f = 1 kHz, VSELH = VENH = 1.4 V, VSELL = VENL = 0.5 V, (Note 2), Unless otherwise specified. Parameter Test Conditions Supply (V) Temp (5C) Min (Notes 3, 4) Typ Max (Notes 3, 4) Units DYNAMIC CHARACTERISTICS Break−Before−Make Time Delay, tD VDpx or VDnx = 1.5V, VEN = 0V, RL = 32 W (See Figure 3) 3.6 25 − 10 − ms OFF−Isolation RL = 50 W, f = 1 MHz, VD+ or VD− = 1 VRMS (See Figure 4) 3.3 25 − 70 − dB Crosstalk (Channel−to−Channel) RL = 50 W, f = 1 MHz, VD+ or VD− = 1 VRMS (See Figure 4) 3.3 25 − 89 − dB Dpx, Dnx OFF Capacitance, COFF f = 1 MHz, VDpx or VDnx = VD+ or VD− = 0 V (See Figure 7) 3.3 25 − 2.7 − pF D+, D− ON Capacitance, CCOM(ON) f = 1 MHz, VDpx or VDnx = VCOM = 0 V (See Figure 7) 3.3 25 − 8.9 − pF Differential Insertion f = 10 MHz 3.3 25 − −0.22 − dB Loss, DIL f = 800 MHz 3.3 25 − −3.3 − Differential OFF− f = 10 MHz 3.3 25 − −44 − Isolation, DISO f = 800 MHz 3.3 25 − −16 − Differential f = 10 MHz 3.3 25 − −44 − Crosstalk, DCTK f = 800 MHz 3.3 25 − −16 − 3.3 Full 3 − 3.6 V VEN = 0 V, VSEL = 0 V or VDD 3.6 25 − 54 65 mA Full − 59 − VEN = VDD, VSEL = 0 V or VDD 3.6 25 − 14 40 Full − 15 − VEN = 0 V, VSEL = 1.8 V 3.6 25 − 55 65 Full − 58 − dB dB POWER SUPPLY CHARACTERISTICS Power Supply Range, VDD Positive Supply Current, I+ mA mA 2. VIN = input voltage to perform proper function. 3. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 4. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. 5. Flatness is defined as the difference between maximum and minimum value of ON−resistance at the specified analog signal voltage points. 6. Limits established by characterization and are not production tested. 7. rON matching between channels is calculated by subtracting the channel with the highest max rON value from the channel with lowest max rON value. 8. Crosstalk is inversely proportional to source impedance. DC ELECTRICAL CHARACTERISTICS – Digital Section (Voltages referenced to GND): VDD = +3.0 V to +3.6 V, GND = 0 V, VS = 2 VRMS, RLOAD = 20 kW , f = 1 kHz, VSELH = VENH = 1.4 V, VSELL = VENL = 0.5 V, (Note 9), Unless otherwise specified. Supply (V) Temp (5C) Min (Notes 10, 11) Typ Max (Notes 10, 11) Units Input Voltage Low, VSELL, VENL 3.3 Full − − 0.5 V Input Voltage High, VSELH, VENH 3.3 Full 1.4 − − V Parameter Test Conditions DIGITAL INPUT CHARACTERISTICS Input Current, ISELH, ISELL VEN = 0 V, VSEL = 0 V or VDD 3.6 Full −0.5 0.01 0.5 mA Input Current, IENL VSEL = VDD, VEN = 0 V 3.6 Full −1.3 −0.7 0.3 mA Input Current, IENH VSEL = 0 V, VEN = VDD 3.6 Full −0.5 0.01 0.5 mA 9. VIN = input voltage to perform proper function. 10. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 11. Parameters with MIN and/or MAX limits are 100% tested at +25 C, unless otherwise specified. Temperature limits established by characterization and are not production tested. www.onsemi.com 5 NL3S588 TEST CIRCUITS AND WAVEFORMS Measurement Points Test Circuit Figure 2. Switching Times Measurement Points Test Circuit Figure 3. Break−Before−Make Time Figure 4. Off−Isolation Test Circuit Figure 5. rON Test Circuit www.onsemi.com 6 NL3S588 TEST CIRCUITS AND WAVEFORMS Figure 6. Crosstalk Test Circuit Figure 7. Capacitance Test Circuit TYPICAL PERFORMANCE CURVES: TA = +25°C, Unless Otherwise Specified Figure 8. On−Resistance vs. Switch Voltage Figure 9. Off−Isolation, 2 VRMS Signal, 20 kW Load Figure 10. Off−Isolation, 0.707 VRMS Signal, 32 kW Load Figure 11. Channel−to−Channel Crosstalk www.onsemi.com 7 NL3S588 TYPICAL PERFORMANCE CURVES: TA = +25°C, Unless Otherwise Specified Figure 12. Channel−to−Channel Crosstalk Figure 13. Insertion Loss vs. Frequency Figure 14. Gain vs. Frequency Figure 15. Stereo Imbalance vs. Frequency Figure 16. THD+N vs. Signal Levels vs. Frequency Figure 17. THD+N vs. Signal Levels vs. Frequency www.onsemi.com 8 NL3S588 TYPICAL PERFORMANCE CURVES: TA = +25°C, Unless Otherwise Specified Figure 18. THD+N vs. Signal Levels vs. Frequency Figure 19. THD+N vs. Signal Levels vs. Frequency Figure 20. PSRR vs. Frequency Figure 21. Frequency Response Figure 22. Crosstalk and Off−Isolation Figure 23. Differential Crosstalk www.onsemi.com 9 NL3S588 TYPICAL PERFORMANCE CURVES: TA = +25°C, Unless Otherwise Specified Figure 24. Differential Off−Isolation Figure 25. Differential Crosstalk Figure 26. USB 2.0 High−Speed Eye Diagram www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UQFN10 1.4x1.8, 0.4P CASE 488AT−01 ISSUE A DATE 01 AUG 2007 1 SCALE 5:1 EDGE OF PACKAGE D ÉÉÉ ÉÉÉ ÉÉÉ PIN 1 REFERENCE 2X 2X A 0.10 C L1 E 0.10 C B TOP VIEW A1 0.05 C A1 C SIDE VIEW 3 9X EXPOSED Cu A 0.05 C 10X DETAIL A Bottom View (Optional) 5 ÉÉÉ ÉÉÉ SEATING PLANE DETAIL B Side View (Optional) 6 e 1 10 10 X L3 b A3 DIM A A1 A3 b D E e L L1 L3 MILLIMETERS MIN MAX 0.45 0.60 0.00 0.05 0.127 REF 0.15 0.25 1.40 BSC 1.80 BSC 0.40 BSC 0.30 0.50 0.00 0.15 0.40 0.60 GENERIC MARKING DIAGRAM* XXMG G e/2 L MOLD CMPD NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. XX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.10 C A B 0.05 C *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. NOTE 3 BOTTOM VIEW MOUNTING FOOTPRINT 1.700 0.0669 0.663 0.0261 0.200 0.0079 9X 0.563 0.0221 1 2.100 0.0827 0.400 0.0157 PITCH DOCUMENT NUMBER: DESCRIPTION: 10 X 0.225 0.0089 SCALE 20:1 98AON22493D mm Ǔ ǒinches Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 10 PIN UQFN, 1.4 X 1.8, 0.4P PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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