NLAS324USG

NLAS324 Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS324 is a dual SPST (Single Pole, Single Throw) switch, similar to 1/2 a standard 4066. The device permits the independent s e l e c t i o n o f 2 a n a l o g / d i g i t a l s i g n a l s . Av a i l a b l e i n t h e Ultra−Small 8 package. The use of advanced 0.6  CMOS process, improves the RON resistance considerably compared to older higher voltage technologies. www.onsemi.com MARKING DIAGRAM 8 Features • • • • • • • • • • • On Resistance is 20  Typical at 5.0 V Matching is t  Between Sections 2 − 6 V Operating Range Ultra Low t 5 pC Charge Injection Ultra Low Leakage t 1 nA at 5.0 V, 25°C Wide Bandwidth u 200 MHz, −3 dB 2000 V ESD (HBM) Ron Flatness $ 6  at 5.0 V Negative Enable Switches are Independent These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant NC1 1 8 VCC COM1 2 7 IN1 IN2 3 6 COM2 GND 4 5 NC2 US8 US SUFFIX CASE 493 8 1 A7 M G G 1 A7 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 NC1 2 COM1 3 IN2 4 GND 5 NC2 6 COM2 7 IN1 8 VCC FUNCTION TABLE Figure 1. Pinout On/Off Enable Input State of Analog Switch L H On Off ORDERING INFORMATION Device Package Shipping† NLAS324USG US8 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 July, 2015 − Rev. 8 1 Publication Order Number: NLAS324/D NLAS324 MAXIMUM RATINGS Symbol Value Unit DC Supply Voltage *0.5 to )7.0 V VI DC Input Voltage *0.5 to )7.0 V VO DC Output Voltage *0.5 to )7.0 V IIK DC Input Diode Current VI < GND *50 mA IOK DC Output Diode Current VO < GND *50 mA VCC Parameter IO DC Output Sink Current $50 mA ICC DC Supply Current per Supply Pin $100 mA IGND DC Ground Current per Ground Pin $100 mA TSTG Storage Temperature Range *65 to )150 _C 260 _C )150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature under Bias JA Thermal Resistance (Note 1) 250 _C/W PD Power Dissipation in Still Air at 85_C 250 mW MSL Moisture Sensitivity FR Level 1 Flammability Rating Oxygen Index: 28 to 34 VESD ESD Withstand Voltage UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 150 N/A V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit 2.0 5.5 V Digital Input Voltage (Enable) GND 5.5 V VIO Static or Dynamic Voltage Across an Off Switch GND VCC V VIS Analog Input Voltage (NO, COM) GND VCC V TA Operating Temperature Range, All Package Types −55 +125 °C tr, tf Input Rise or Fall Time, (Enable Input) 0 0 100 20 ns/V VCC Positive DC Supply Voltage VIN Vcc = 3.3 V + 0.3 V Vcc = 5.0 V + 0.5 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80_C 117.8 TJ = 90_C 1,032,200 TJ = 100_C 80 TJ = 110_C Time, Years TJ = 120_C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130_C Junction Temperature 5C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 1000 TIME, YEARS Figure 2. Failure Rate vs. Time Junction Temperature www.onsemi.com 2 NLAS324 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Max Limit Symbol Parameter VIH Condition VCC −55 to 255C