NLV14049UBDTR2G

MC14049UB Hex Buffers The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversion using only one supply voltage, VDD. The input−signal high level (VIH) can exceed the VDD supply voltage for logic−level conversions. Two TTL/DTL Loads can be driven when the device is used as CMOS−to−TTL/DTL converters (VDD = 5.0 V, VOL v 0.4 V, IOL ≥ 3.2 mA). Note that pins 13 and 16 are not connected internally on this device; consequently connections to these terminals will not affect circuit operation. www.onsemi.com MARKING DIAGRAMS 16 SOIC−16 D SUFFIX CASE 751B Features • • • • • • • • 1 High Source and Sink Currents High−to−Low Level Converter Supply Voltage Range = 3.0 V to 18 V Meets JEDEC UB Specifications VIN can exceed VDD Improved ESD Protection on All Inputs These Devices are Pb−Free and are RoHS Compliant NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable 16 TSSOP−16 DT SUFFIX CASE 948F Parameter 14 049U ALYW G G 1 16 SOEIAJ−16 F SUFFIX CASE 966 MAXIMUM RATINGS (Voltages Referenced to VSS) Symbol 14049UG AWLYWW Value Unit VDD DC Supply Voltage Range −0.5 to +18.0 V Vin Input Voltage Range (DC or Transient) −0.5 to +18.0 V Vout Output Voltage Range (DC or Transient) −0.5 to VDD +0.5 V Iin Input Current (DC or Transient) per Pin ± 10 mA Iout Output Current (DC or Transient) per Pin +45 mA PD Power Dissipation, per Package (Note 1) Plastic SOIC MC14049UB ALYWG 1 A WL, L YY, Y WW, W G or G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION mW 825 740 TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. TL Lead Temperature (8−Second Soldering) 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Temperature Derating: All Packages: See Figure 4. This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields referenced to the VSS pin, only. Extra precautions must be taken to avoid applications of any voltage higher than the maximum rated voltages to this high−impedance circuit. For proper operation, the ranges VSS v Vin v 18 V and VSS v Vout v VDD are recommended. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2014 June, 2017 − Rev. 10 1 Publication Order Number: MC14049UB/D MC14049UB VDD 1 16 NC OUTA 2 15 OUTF INA 3 14 INF OUTB 4 13 NC INB 5 12 OUTE OUTC 6 11 INE INC 7 10 OUTD VSS 8 9 IND NC = NO CONNECTION VDD 3 2 5 4 7 6 9 10 11 12 14 15 MC14049UB NC = PIN 13, 16 VSS = PIN 8 VDD = PIN 1 VSS Figure 3. Circuit Schematic Figure 2. Logic Diagram MC14049UB Figure 1. Pin Assignment (1/6 of circuit shown) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) − 55_C Characteristic Output Voltage Vin = VDD or 0 Symbol 25_C 125_C VDD Vdc Min Max Min Typ (Note 2) Max Min Max Unit “0” Level VOL 5.0 10 15 − − − 0.05 0.05 0.05 − − − 0 0 0 0.05 0.05 0.05 − − − 0.05 0.05 0.05 Vdc “1” Level VOH 5.0 10 15 4.95 9.95 14.95 − − − 4.95 9.95 14.95 5.0 10 15 − − − 4.95 9.95 14.95 − − − Vdc “0” Level VIL 5.0 10 15 − − − 1.0 2.0 2.5 − − − 2.25 4.50 6.75 1.0 2.0 2.5 − − − 1.0 2.0 2.5 5.0 10 15 4.0 8.0 12.5 − − − 4.0 8.0 12.5 2.75 5.50 8.25 − − − 4.0 8.0 12.5 − − − 5.0 10 15 – 1.6 – 1.6 – 4.7 − − − – 1.25 – 1.3 – 3.75 – 2.5 – 2.6 – 10 − − − – 1.0 – 1.0 – 3.0 − − − IOL 5.0 10 15 3.75 10 30 − − − 3.2 8.0 24 6.0 16 40 − − − 2.6 6.6 19 − − − mAdc Input Current Iin 15 − ± 0.1 − ± 0.000 01 ± 0.1 − ± 1.0 mAdc Input Capacitance (Vin = 0) Cin − − − − 10 20 − − pF Quiescent Current (Per Package) IDD 5.0 10 15 − − − 1.0 2.0 4.0 − − − 0.002 0.004 0.006 1.0 2.0 4.0 − − − 30 60 120 mAdc IT 5.0 10 15 Vin = 0 or VDD Input Voltage (VO = 4.5 Vdc) (VO = 9.0 Vdc) (VO = 13.5 Vdc) “1” Level VIH (VO = 0.5 Vdc) (VO = 1.0 Vdc) (VO = 1.5 Vdc) Output Drive Current (VOH = 2.5 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) Vdc Vdc IOH Source (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Sink Total Supply Current (Note 3 and 4) (Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching) mAdc IT = (1.8 mA/kHz) f + IDD IT = (3.5 mA/kHz) f + IDD IT = (5.3 mA/kHz) f + IDD 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. The formulas given are for the typical characteristics only at 25_C. 4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL − 50) Vfk where: IT is in mA (per package), CL in pF, V = (VDD − VSS) in volts, f in kHz is input frequency, and k = 0.002. www.onsemi.com 2 mAdc MC14049UB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SWITCHING CHARACTERISTICS (Note 5) (CL = 50 pF, TA = 25_C) Characteristic Symbol Output Rise Time tTLH = (0.8 ns/pF) CL + 60 ns tTLH = (0.3 ns/pF) CL + 35 ns tTLH = (0.27 ns/pF) CL + 26.5 ns tTLH Output Fall Time tTHL = (0.3 ns/pF) CL + 25 ns tTHL = (0.12 ns/pF) CL + 14 ns tTHL = (0.1 ns/pF) CL + 10 ns tTHL Propagation Delay Time tPLH = (0.38 ns/pF) CL + 61 ns tPLH = (0.20 ns/pF) CL + 30 ns tPLH = (0.11 ns/pF) CL + 24.5 ns tPLH Propagation Delay Time tPHL = (0.38 ns/pF) CL + 11 ns tPHL = (0.12 ns/PF) CL + 9 ns tPHL = (0.11 ns/pF) CL + 4.5 ns tPHL VDD Vdc Min Typ (Note 6) Max 5.0 10 15 − − − 100 50 40 160 100 60 5.0 10 15 − − − 40 20 15 60 40 30 5.0 10 15 − − − 80 40 30 120 65 50 5.0 10 15 − − − 30 15 10 60 30 20 Unit ns ns ns ns 5. The formulas given are for the typical characteristics only at 25_C. 6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. ORDERING INFORMATION Package Shipping† SOIC−16 (Pb−Free) 48 Units / Rail SOIC−16 (Pb−Free) 2500 / Tape & Reel MC14049UBDTR2G TSSOP−16 (Pb−Free) 2500 / Tape & Reel MC14049UBFELG SOEIAJ−16 (Pb−Free) 2000 / Tape & Reel Device MC14049UBDG NLV14049UBDG* MC14049UBDR2G NLV14049UBDR2G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. Vout , OUTPUT VOLTAGE (Vdc) 18 15 10 5 VDD = 15 Vdc VDD = 10 Vdc −55°C VDD = 5 Vdc +125°C 5 10 15 Vin, INPUT VOLTAGE (Vdc) 18 Figure 4. Typical Voltage Transfer Characteristics versus Temperature www.onsemi.com 3 MC14049UB VDD VDD 1 1 IOH 8 IOL VOH VSS 8 VDS = VOH - VDD VDD = VOL 160 I OL, OUTPUT SINK CURRENT (mAdc) 0 I OH , OUTPUT SOURCE CURRNT (mAdc) VOL VSS VGS = 5.0 Vdc -10 VGS = 15 Vdc 120 -20 VGS = 10 Vdc -30 -40 VGS = 15 Vdc -50 -10 MAXIMUM CURRENT LEVEL -8.0 -6.0 -4.0 -2.0 VDS, DRAIN-TO-SOURCE VOLTAGE (Vdc) MAXIMUM CURRENT LEVEL 40 VGS = 5.0 Vdc 0 0 VGS = 10 Vdc 80 0 Figure 5. Typical Output Source Characteristics 2.0 4.0 6.0 8.0 VDS, DRAIN-TO-SOURCE VOLTAGE (Vdc) 10 Figure 6. Typical Output Sink Characteristics VDD PD , MAXIMUM POWER DISSIPATION (mW) PER PACKAGE 1 PULSE GENERATOR 1200 1100 1000 8 900 825 800 740 700 600 20 ns VSS CL 20 ns INPUT VDD 90% 50% (P) PDIP 500 400 10% 300 200 100 0 Vout Vin (D) SOIC 175 mW (P) 120 mW (D) OUTPUT 25 50 75 VSS tPHL 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Figure 7. Ambient Temperature Power Derating tPLH VOH 90% 50% 10% tTHL tTLH Figure 8. Switching Time Test Circuit and Waveforms www.onsemi.com 4 VOL MC14049UB PACKAGE DIMENSIONS SOIC−16 D SUFFIX CASE 751B−05 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 16 9 −B− 1 P 8 PL 0.25 (0.010) 8 B M S G R K F X 45 _ C −T− SEATING PLANE J M D 16 PL 0.25 (0.010) M T B S A S SOLDERING FOOTPRINT* 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 MC14049UB PACKAGE DIMENSIONS TSSOP−16 DT SUFFIX CASE 948F ISSUE B 16X K REF 0.10 (0.004) 0.15 (0.006) T U T U M S V S S K ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. N 0.25 (0.010) 8 1 M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N DIM A B C D F G H J J1 K K1 L M F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE H D DETAIL E G SOLDERING FOOTPRINT* 7.06 1 0.65 PITCH 16X 0.36 16X 1.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ MC14049UB PACKAGE DIMENSIONS SOEIAJ−16 F SUFFIX CASE 966 ISSUE A 16 LE 9 Q1 M_ E HE 1 L 8 DETAIL P Z D e VIEW P A DIM A A1 b c D E e HE L LE M Q1 Z A1 b 0.13 (0.005) c NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). M 0.10 (0.004) MILLIMETERS MIN MAX --2.05 0.05 0.20 0.35 0.50 0.10 0.20 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 0_ _ 0.70 0.90 --0.78 INCHES MIN MAX --0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 --0.031 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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