NRVBB1060T4G

NRVBB1060 SWITCHMODEt Power Rectifier This SWITCHMODE power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features http://onsemi.com • • • • • Low Forward Voltage 175°C Operating Junction Temperature Low Power Loss/High Efficiency High Surge Capacity This is a Pb−Free Device SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS 1 4 3 Applications • Power Supply − Output Rectification • Power Management Mechanical Characteristics 4 1 3 D2PAK CASE 418B STYLE 3 • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.7 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MARKING DIAGRAM AY WW B1060G AKA A Y WW B1060 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device NRVBB1060T4G Package D2PAK (Pb−Free) Shipping † 800/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 June, 2006 − Rev. 0 Publication Order Number: NRVBB1060/D NRVBB1060 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 133°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM TJ Tstg dv/dt Value 60 Unit V 10 20 150 0.5 *65 to +175 *65 to +175 10,000 A A A A °C °C V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction−to−Case Maximum Thermal Resistance, Junction−to−Ambient RqJC RqJA 2.0 60 °C/W °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TC = 125°C) (iF = 10 Amps, TC = 25°C) (iF = 20 Amps, TC = 125°C) (iF = 20 Amps, TC = 25°C) Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. vF 0.7 0.8 0.85 0.95 iR 25 0.10 mA V http://onsemi.com 2 NRVBB1060 i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 100 TJ = 150°C IR , REVERSE CURRENT (mA) 10 1.0 125°C 85°C 10 150°C 125°C 85°C TJ = 25°C 0.1 0.01 1.0 25°C 0 10 20 30 40 50 60 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 110 RqJC = 2°C/W 120 130 140 150 160 170 180 SQUARE WAVE dc C, CAPACITANCE (pF) 1000 900 800 700 600 500 400 300 200 100 0 0 5 10 15 20 25 30 35 40 TJ = 25°C f = 1 MHz 45 50 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (V) Figure 3. Current Derating, Case Figure 4. Typical Capacitance PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 10 9.0 8.0 7.0 6.0 5.0 4.0 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) TJ = 85°C 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 SQUARE WAVE IPK/IAV = p IPK/IAV = 5.0 IPK/IAV = 10 dc TJ = 150°C SQUARE WAVE IPK/IAV = p IPK/IAV = 5.0 IPK/IAV = 10 IPK/IAV = 20 dc 3.0 IPK/IAV = 20 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 IF(AV), AVERAGE CURRENT (AMPS) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 IF(AV), AVERAGE CURRENT (AMPS) Figure 5. Typical Forward Power Dissipation Figure 6. Typical Forward Power Dissipation http://onsemi.com 3 NRVBB1060 PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J C E −B− 4 DIM A B C D E F G H J K L M N P R S V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W A 1 2 3 S −T− SEATING PLANE K G D H 3 PL M W J 0.13 (0.005) VARIABLE CONFIGURATION ZONE L M TB M R N U L P L M STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE M F VIEW W−W 1 F VIEW W−W 2 F VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 4 NRVBB1060 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. 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