NRVBB1060W1T4G

NRVBB1060, NRVBB1060W1 Switch-mode Power Rectifier This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features • • • • • • Low Forward Voltage 175°C Operating Junction Temperature Low Power Loss/High Efficiency High Surge Capacity For Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device www.onsemi.com SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS 1 1 4 3 STYLE 3 1 • Power Supply − Output Rectification • Power Management 3 D2PAK CASE 418B STYLE 3, 6 Mechanical Characteristics • STYLE 6 4 Applications • • • • 4 3 Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.7 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MARKING DIAGRAMS AY WW AY B1060G xKA 1060W1G xKA NRVBB1060 A Y WW G xKA x WW NRVBB1060W1 = Assembly Location = Year = Work Week = Pb−Free Package = Diode Polarity = N or A ORDERING INFORMATION Device Package Shipping† NRVBB1060T4G D2PAK 800/Tape & Reel (Pb−Free) NRVBB1060W1T4G D2PAK 800/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 January, 2016 − Rev. 3 1 Publication Order Number: NRVBB1060/D NRVBB1060, NRVBB1060W1 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 60 V Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature (Note 1) TJ *65 to +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient RqJA 60 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TC = 125°C) (iF = 10 Amps, TC = 25°C) (iF = 20 Amps, TC = 125°C) (iF = 20 Amps, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR V 0.7 0.8 0.85 0.95 mA 25 0.10 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 100 100 10 IR , REVERSE CURRENT (mA) TJ = 150°C 150°C 85°C 125°C TJ = 25°C 1.0 10 125°C 1.0 85°C 0.1 0.01 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.0 0.001 1.2 50 40 Figure 2. Typical Reverse Current 60 1000 C, CAPACITANCE (pF) 14 12 SQUARE WAVE 10 TJ = 25°C f = 1 MHz 900 dc 16 8.0 6.0 4.0 800 700 600 500 400 300 200 100 RqJC = 2°C/W 0 120 130 140 150 160 180 170 0 5 10 15 20 25 30 35 40 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (V) Figure 3. Current Derating, Case Figure 4. Typical Capacitance 10 9.0 30 Figure 1. Typical Forward Voltage 18 0 110 20 VR, REVERSE VOLTAGE (VOLTS) 20 2.0 10 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) NRVBB1060, NRVBB1060W1 TJ = 85°C SQUARE WAVE IPK/IAV = p 8.0 7.0 dc IPK/IAV = 5.0 6.0 IPK/IAV = 10 5.0 4.0 3.0 IPK/IAV = 20 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 45 10 TJ = 150°C 9.0 SQUARE WAVE 8.0 IPK/IAV = p 7.0 dc IPK/IAV = 5.0 6.0 5.0 IPK/IAV = 10 4.0 3.0 IPK/IAV = 20 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 IF(AV), AVERAGE CURRENT (AMPS) IF(AV), AVERAGE CURRENT (AMPS) Figure 5. Typical Forward Power Dissipation Figure 6. Typical Forward Power Dissipation www.onsemi.com 3 50 NRVBB1060, NRVBB1060W1 100 socket R(t), (°C/W) min pad 10 1” pad 1 heatsink 0.1 0.01 0.000001 0.001 0.01 0.1 1 10 100 1000 Heating Time (s) Figure 7. Single−Pulse Transient Response Curves, Various Mounting Conditions www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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