NSM6056MT1G
NPN Transistor with Zener
Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
Typical Applications
NPN Transistor with
Zener Diode
• Driving Circuit
• Switching Applications
6
MAXIMUM RATINGS − NPN TRANSISTOR
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
V
Collector −Base Voltage
VCBO
60
V
Emitter −Base Voltage
VEBO
6.0
V
IC
600
mA
ICM
900
mA
Collector Current − Continuous
Collector Current − Peak
MAXIMUM RATINGS − ZENER DIODE
Rating
Forward Voltage @ IF = 10 mA
Value
Unit
VF
0.9
V
1
1 2
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation FR−5 Board,
(Note 1) @ TA = 25°C
Thermal Resistance from
Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
Max
Unit
380
mW
RqJA
328
°C/W
TJ, Tstg
−55 to +150
°C
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Minimum Pad.
4
Z1
4
6 5
Symbol
5
3
Q1
2
3
SC−74
CASE 318F
MARKING DIAGRAM
M60MG
G
M60 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NSM6056MT1G
Package
Shipping†
SC−74
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 0
1
Publication Order Number:
NSM6056M/D
NSM6056MT1G
NPN TRANSISTOR − ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
IBEV
−
0.1
mAdc
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
ICEX
−
0.1
mAdc
20
40
80
100
40
−
−
−
300
−
−
−
−
0.4
0.75
0.75
−
0.95
1.2
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
250
−
MHz
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
6.5
pF
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
−
30
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
1.0
15
kW
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10− 4
Small −Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
500
−
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
30
mmhos
(VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
15
tr
−
20
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
30
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ZENER DIODE − ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types)
Device
NSM6056MT1G
Test
Current
Izt mA
5.0
Min
Max
ZZK IZ
= 0.5
mA W
Max
5.49
5.73
200
Zener Voltage VZ
ZZT
IZ = IZT
@ 10%
Mod W
Max
mA
V
Min
Max
C pF Max @
VR = 0
f = 1 MHz
40
1.0
2.0
−2.0
2.5
200
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2
Max
IR @ VR
dVZ/dt (mV/k)
@ IZT1 = 5 mA
NSM6056MT1G
TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR
500
450
h FE, DC CURRENT GAIN
400
VCE = 5.0 V
VCE = 2.0 V
VCE = 1.0 V
TJ = 150°C
350
300
25°C
250
200
-55°C
150
100
50
0
1
0.1
IC, COLLECTOR CURRENT (A)
0.01
1.2
1.0
0.8
IC = 1.0 mA
100 mA
10 mA
500 mA
300 mA
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
0.35
IC/IB = 10
0.30
0.25
150°C
0.20
25°C
0.15
0.10
-55°C
0.05
0
0.0001
0.1
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 3. Collector−Emitter Saturation Voltage
vs. Collector Current
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3
1
100
NSM6056MT1G
TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR
VBE(on), BASE−EMITTER TURN ON
VOLTAGE (V)
1.0
1.0
IC/IB = 10
0.9
0.8
0.7
0.6
−55°C
25°C
0.5
0.3
150°C
0.0001
0.001
0.01
0.1
1
VCE = 2.0 V
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4
0.3
150°C
0.0001
0.001
IC, COLLECTOR CURRENT (A)
0.01
Figure 5. Base−Emitter Turn On Voltage vs.
Collector Current
1000
VCE = 1.0 V
TA = 25°C
100
10
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 6. Current−Gain−Bandwidth Product
TYPICAL ELECTRICAL CHARACTERISTICS − ZENER DIODE
1000
100
150°C
10
75°C
1.0
0.4
0.5
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base−Emitter Saturation Voltage vs.
Collector Current
fT, CURRENT−GAIN−BANDWIDTH (MHz)
0.4
IF, FORWARD CURRENT (mA)
VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
1.1
25°C
0°C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 7. Typical Forward Voltage
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4
1.1
1.2
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−74
CASE 318F
ISSUE P
6
1
SCALE 2:1
DATE 07 OCT 2021
GENERIC
MARKING DIAGRAM*
XXX MG
G
XXX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
STYLE 4:
PIN 1. COLLECTOR 2
2. EMITTER 1/EMITTER 2
3. COLLECTOR 1
4. EMITTER 3
5. BASE 1/BASE 2/COLLECTOR 3
6. BASE 3
STYLE 5:
PIN 1. CHANNEL 1
2. ANODE
3. CHANNEL 2
4. CHANNEL 3
5. CATHODE
6. CHANNEL 4
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 8:
PIN 1. EMITTER 1
2. BASE 2
3. COLLECTOR 2
4. EMITTER 2
5. BASE 1
6. COLLECTOR 1
STYLE 9:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 10:
PIN 1. ANODE/CATHODE
2. BASE
3. EMITTER
4. COLLECTOR
5. ANODE
6. CATHODE
STYLE 11:
PIN 1. EMITTER
2. BASE
3. ANODE/CATHODE
4. ANODE
5. CATHODE
6. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42973B
SC−74
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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