NSM6056MT1G

NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 V Collector −Base Voltage VCBO 60 V Emitter −Base Voltage VEBO 6.0 V IC 600 mA ICM 900 mA Collector Current − Continuous Collector Current − Peak MAXIMUM RATINGS − ZENER DIODE Rating Forward Voltage @ IF = 10 mA Value Unit VF 0.9 V 1 1 2 THERMAL CHARACTERISTICS Rating Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Thermal Resistance from Junction−to−Ambient Junction and Storage Temperature Range Symbol Max Unit 380 mW RqJA 328 °C/W TJ, Tstg −55 to +150 °C PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 Minimum Pad. 4 Z1 4 6 5 Symbol 5 3 Q1 2 3 SC−74 CASE 318F MARKING DIAGRAM M60MG G M60 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NSM6056MT1G Package Shipping† SC−74 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 March, 2011 − Rev. 0 1 Publication Order Number: NSM6056M/D NSM6056MT1G NPN TRANSISTOR − ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 mAdc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 mAdc 20 40 80 100 40 − − − 300 − − − − 0.4 0.75 0.75 − 0.95 1.2 ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE VCE(sat) VBE(sat) Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 250 − MHz Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 kW Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10− 4 Small −Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 15 tr − 20 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 30 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ZENER DIODE − ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types) Device NSM6056MT1G Test Current Izt mA 5.0 Min Max ZZK IZ = 0.5 mA W Max 5.49 5.73 200 Zener Voltage VZ ZZT IZ = IZT @ 10% Mod W Max mA V Min Max C pF Max @ VR = 0 f = 1 MHz 40 1.0 2.0 −2.0 2.5 200 http://onsemi.com 2 Max IR @ VR dVZ/dt (mV/k) @ IZT1 = 5 mA NSM6056MT1G TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR 500 450 h FE, DC CURRENT GAIN 400 VCE = 5.0 V VCE = 2.0 V VCE = 1.0 V TJ = 150°C 350 300 25°C 250 200 -55°C 150 100 50 0 1 0.1 IC, COLLECTOR CURRENT (A) 0.01 1.2 1.0 0.8 IC = 1.0 mA 100 mA 10 mA 500 mA 300 mA 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 0.35 IC/IB = 10 0.30 0.25 150°C 0.20 25°C 0.15 0.10 -55°C 0.05 0 0.0001 0.1 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 3. Collector−Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 1 100 NSM6056MT1G TYPICAL ELECTRICAL CHARACTERISTICS − NPN TRANSISTOR VBE(on), BASE−EMITTER TURN ON VOLTAGE (V) 1.0 1.0 IC/IB = 10 0.9 0.8 0.7 0.6 −55°C 25°C 0.5 0.3 150°C 0.0001 0.001 0.01 0.1 1 VCE = 2.0 V 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 0.3 150°C 0.0001 0.001 IC, COLLECTOR CURRENT (A) 0.01 Figure 5. Base−Emitter Turn On Voltage vs. Collector Current 1000 VCE = 1.0 V TA = 25°C 100 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 6. Current−Gain−Bandwidth Product TYPICAL ELECTRICAL CHARACTERISTICS − ZENER DIODE 1000 100 150°C 10 75°C 1.0 0.4 0.5 0.1 IC, COLLECTOR CURRENT (A) Figure 4. Base−Emitter Saturation Voltage vs. Collector Current fT, CURRENT−GAIN−BANDWIDTH (MHz) 0.4 IF, FORWARD CURRENT (mA) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 25°C 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 7. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F ISSUE P 6 1 SCALE 2:1 DATE 07 OCT 2021 GENERIC MARKING DIAGRAM* XXX MG G XXX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: 98ASB42973B SC−74 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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