NSR05T30XV2T5G

NSR05T30XV2 500 mA, 30 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving micro−packaging ideal for space constraint applications. www.onsemi.com Features Low Forward Voltage Drop − 370 mV (Typ.) @ IF = 500 mA Low Reverse Current − 52 mA (Typ.) @ VR = 30 V 500 mA of Continuous Forward Current High Switching Speed These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM 2 1 YL SOD−523 CASE 502 YL M M • • • • • 1 2 = Specific Device Code Date Code Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 1 CATHODE 2 ANODE ORDERING INFORMATION MAXIMUM RATINGS Rating Device Symbol Value Unit VR 30 V Forward Current (DC) IF 500 mA Forward Surge Current (60 Hz @ 1 cycle) IFSM 3.0 A Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 1.5 A Reverse Voltage Package NSR05T30XV2T5G SOD−523 (Pb−Free) Shipping† 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2017 April, 2017 − Rev. 0 1 Publication Order Number: NSR05T30XV2/D NSR05T30XV2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Symbol Junction and Storage Temperature Range Min Max Unit RqJA PD 489 250 °C/W mW RqJA PD 358 350 °C/W mW TJ, Tstg Typ °C −55 to +150 1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 1000 D = 0.5 R(t) (°C/W) 100 10 0.2 0.1 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 10 100 1000 1 10 100 1000 Figure 1. Thermal Response (Note 1) 1000 R(t) (°C/W) D = 0.5 100 0.2 10 0.1 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 2. Thermal Response (Note 2) www.onsemi.com 2 NSR05T30XV2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 30 52 110 170 200 275 205 370 340 380 420 450 Unit mA Reverse Leakage (VR = 10 V) (VR = 30 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) (IF = 500 mA) VF Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT 85 pF Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 3) trr 23 ns VFRM 395 mV Peak Forward Recovery Voltage (IF = 100 mA, tr = 20 ns, Figure 4) mV 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 3. Recovery Time Equivalent Test Circuit IF VF tr VFRM VF Time Time Figure 4. Peak Forward Recovery Voltage Definition www.onsemi.com 3 NSR05T30XV2 TYPICAL CHARACTERISTICS 100 125°C 100 100°C 10 85°C 25°C 1 −25°C −40°C −55°C 0.1 0 0.2 0.1 0.4 −25°C 0.001 −40°C 0.0001 −55°C 0.00001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 5. Forward Voltage Figure 6. Leakage Current 10 1 0.1 0.01 0.001 0.0001 25 30 25 30 10000 1000 1.0 0.8 0.5 100 0.2 0.1 10 1 100 150 200 250 300 350 400 450 500 0 5 10 15 20 IF, FORWARD CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 7. Average Forward Power Dissipation Figure 8. Average Reverse Power Dissipation 140 f = 1.0 MHz CT, TOTAL CAPACITANCE (pF) 25°C 0.01 0.5 1.0 0.8 0.5 0.2 0.1 50 85°C 0.1 VF, FORWARD VOLTAGE (V) 100 120 100 80 60 40 20 0 0 1 0.000001 0.3 1000 0 150°C 125°C 100°C 10 PR, AVERAGE REVERSE POWER (mW) PF, AVERAGE FORWARD POWER (mW) Ir, REVERSE CURRENT (mA) 150°C IFSM, FORWARD SURGE MAX CURRENT (A) IF, FORWARD CURRENT (mA) 1000 5 10 15 20 25 30 25 Based on square wave currents TJ = 25°C prior to surge 20 15 10 5 0 0.001 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) tP, PULSE ON TIME (ms) Figure 9. Total Capacitance Figure 10. Forward Surge Current www.onsemi.com 4 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 2 1 1 STYLE 1 STYLE 2 SOD−523 CASE 502−01 ISSUE E SCALE 4:1 −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 GENERIC MARKING DIAGRAM* SIDE VIEW 2X XX L 1 XX 2 1 STYLE 1 2X XX M L2 RECOMMENDED SOLDERING FOOTPRINT* PACKAGE OUTLINE = Specific Device Code Date Code STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE 1.80 0.48 2 STYLE 2 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. BOTTOM VIEW 2X M b 0.08 1 M 2X DATE 28 SEP 2010 2X STYLE 2: NO POLARITY 0.40 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11524D SOD−523 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative