NST3904DXV6T1G

NST3904DXV6T1, NST3904DXV6T5 Dual General Purpose Transistor The NST3904DXV6T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-563 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. Features http://onsemi.com (3) (2) (1) • • • • • • Q1 Q2 hFE, 100-300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb-Free Devices (4) (5) NST3904DXV6T1 (6) MAXIMUM RATINGS 1 Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Electrostatic Discharge HBM MM Symbol VCEO VCBO VEBO IC ESD Value 40 60 6.0 200 >16000 >2000 Unit Vdc Vdc Vdc mAdc V SOT-563 CASE 463A PLASTIC MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance Junction‐to‐Ambient (Note 1) Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction‐to‐Ambient (Note 1) Junction and Storage Temperature Range Symbol PD Max 357 2.9 350 Unit mW mW/°C °C/W 1 MA M G G RqJA MA = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) Symbol PD RqJA TJ, Tstg Max 500 4.0 250 - 55 to +150 Unit mW mW/°C °C/W °C ORDERING INFORMATION Device NST3904DXV6T1 Package Shipping† SOT-563* 4000/Tape & Reel NST3904DXV6T1G SOT-563* 4000/Tape & Reel NST3904DXV6T5 SOT-563* 8000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad NST3904DXV6T5G SOT-563* 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb-Free. © Semiconductor Components Industries, LLC, 2007 1 August, 2007 - Rev. 4 Publication Order Number: NST3904DXV6T1/D NST3904DXV6T1, NST3904DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small - Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (IB1 = IB2 = 1.0 mAdc) td tr ts tf 35 35 200 ns 50 ns fT Cobo Cibo hie hre hfe hoe NF 300 1.0 2.0 0.5 0.1 100 100 1.0 3.0 4.0 8.0 10 12 8.0 10 400 400 40 60 5.0 4.0 MHz pF pF kW X 10- 4 mmhos dB hFE 40 70 100 60 30 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.2 0.3 Vdc 300 Vdc V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit 2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%. 10 < t1 < 500 ms DUTY CYCLE = 2% +10.9 V 10 k - 0.5 V < 1 ns Cs < 4 pF* - 9.1 V′ * Total shunt capacitance of test jig and connectors < 1 ns 275 10 k 0 1N916 Cs < 4 pF* +3 V +10.9 V 275 DUTY CYCLE = 2% 300 ns +3 V t1 Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 2 NST3904DXV6T1, NST3904DXV6T5 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) 5.0 Cibo 3.0 2.0 Cobo 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance 500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 2.0 V 50 70 100 200 40 V 15 V 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10 TIME (ns) tr @ VCC = 3.0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Turn-On Time 500 300 200 t s, STORAGE TIME (ns) ′ 100 70 50 30 20 10 7 5 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200 Figure 5. Rise Time t′s = ts - 1/8 tf IB1 = IB2 t f , FALL TIME (ns) VCC = 40 V IB1 = IB2 IC/IB = 20 100 70 50 30 20 10 7 5 IC/IB = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Storage Time Figure 7. Fall Time http://onsemi.com 3 NST3904DXV6T1, NST3904DXV6T5 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 20 40 100 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA 14 f = 1.0 kHz 12 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 IC = 100 mA IC = 1.0 mA IC = 0.5 mA IC = 50 mA f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 8. Noise Figure Figure 9. Noise Figure h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 hoe, OUTPUT ADMITTANCE ( m mhos) 5.0 10 100 50 h fe , CURRENT GAIN 200 20 10 5 100 70 50 2 1 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 10. Current Gain hre , VOLTAGE FEEDBACK RATIO (x 10 -4) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 10 7.0 5.0 3.0 2.0 Figure 11. Output Admittance 2.0 1.0 0.5 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 12. Input Impedance Figure 13. Voltage Feedback Ratio http://onsemi.com 4 NST3904DXV6T1, NST3904DXV6T5 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125°C 1.0 0.7 0.5 0.3 0.2 - 55°C +25°C VCE = 1.0 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 14. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 15. Collector Saturation Region 1.2 TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ °C) 1.0 0.5 qVC FOR VCE(sat) 0 - 0.5 - 55°C TO +25°C - 1.0 +25°C TO +125°C - 1.5 - 2.0 qVB FOR VBE(sat) - 55°C TO +25°C +25°C TO +125°C 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 16. “ON” Voltages Figure 17. Temperature Coefficients http://onsemi.com 5 NST3904DXV6T1, NST3904DXV6T5 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 D -X- A L 4 6 5 1 2 3 E -Y- HE b e 5 6 PL M C XY 0.08 (0.003) DIM A b C D E e L HE SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 0.0394 1.35 0.0531 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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