NST3906DXV6T1

NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. • • • • • • http://onsemi.com (3) (2) Q1 hFE, 100-300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Lead-Free Solder Plating Q2 (4) (5) 6 Symbol Value Unit Collector - Emitter Voltage VCEO -40 Vdc Collector - Base Voltage VCBO -40 Vdc Emitter - Base Voltage VEBO -5.0 Vdc IC -200 mAdc ESD HBM>16000, MM>2000 V Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW Collector Current - Continuous Electrostatic Discharge (6) NST3906DXV6T1 MAXIMUM RATINGS Rating (1) 54 1 2 3 SOT-563 CASE 463A PLASTIC MARKING DIAGRAM A2 D THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient RJA Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C mW/°C ORDERING INFORMATION °C/W 350 (Note 1) Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW Derate above 25°C A2 = Specific Device Code D = Date Code Device Package Shipping NST3906DXV6T1 SOT-563 4 mm pitch 4000/Tape & Reel NST3906DXV6T5 SOT-563 2 mm pitch 8000/Tape & Reel mW/°C Thermal Resistance Junction-to-Ambient RJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg - 55 to +150 °C 1. FR-4 @ Minimum Pad  Semiconductor Components Industries, LLC, 2003 March, 2003 - Rev. 0 1 Publication Order Number: NST3906DXV6T1/D NST3906DXV6T1, NST3906DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage (Note 2) V(BR)CEO -40 - Vdc Collector - Base Breakdown Voltage V(BR)CBO -40 - Vdc Emitter - Base Breakdown Voltage V(BR)EBO -5.0 - Vdc IBL - -50 nAdc ICEX - -50 nAdc 60 80 100 60 30 300 - - -0.25 -0.4 -0.65 - -0.85 -0.95 OFF CHARACTERISTICS Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) hFE Collector - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VCE(sat) Base - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VBE(sat) - Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product fT 250 - MHz Output Capacitance Cobo - 4.5 pF Input Capacitance Cibo - 10.0 pF Input Impedance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hie 2.0 12 kΩ Voltage Feedback Ratio (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hre 0.1 10 X 10- 4 Small - Signal Current Gain (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hfe 100 400 - Output Admittance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) hoe 3.0 60 mhos Noise Figure (VCE = -5.0 Vdc, IC = -100 Adc, RS = 1.0 k Ω, f = 1.0 kHz) NF - 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = -3.0 Vdc, VBE = 0.5 Vdc) td - 35 Rise Time (IC = -10 mAdc, IB1 = -1.0 mAdc) tr - 35 Storage Time (VCC = -3.0 Vdc, IC = -10 mAdc) ts - 225 Fall Time (IB1 = IB2 = -1.0 mAdc) tf - 75 2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤ 2.0%. http://onsemi.com 2 ns ns NST3906DXV6T1, NST3906DXV6T5 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k +0.5 V 10 k 0 Cs < 4 pF* 10.6 V Cs < 4 pF* 1N916 300 ns DUTY CYCLE = 2% 10 < t1 < 500 s 10.9 V t1 DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 CAPACITANCE (pF) 7.0 Cobo 5.0 Cibo 3.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 20 30 40 Figure 3. Capacitance TJ = 25°C TJ = 125°C 500 500 IC/IB = 10 300 200 VCC = 40 V IB1 = IB2 300 200 tr @ VCC = 3.0 V 15 V 30 20 t f , FALL TIME (ns) TIME (ns) IC/IB = 20 100 70 50 100 70 50 30 20 IC/IB = 10 40 V 10 7 5 10 2.0 V 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Turn - On Time Figure 5. Fall Time http://onsemi.com 3 200 NST3906DXV6T1, NST3906DXV6T5 TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = - 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200
IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200
IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 IC = 0.5 mA 8 6 4 IC = 50 A 2 IC = 100 A 0 100 0.1 0.2 40 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 6. 100 Figure 7. h PARAMETERS (VCE = - 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , DC CURRENT GAIN 300 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 h ie , INPUT IMPEDANCE (k OHMS) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 9. Output Admittance hre , VOLTAGE FEEDBACK RATIO (x 10 −4) Figure 8. Current Gain 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 10. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 11. Voltage Feedback Ratio http://onsemi.com 4 NST3906DXV6T1, NST3906DXV6T5 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 −
55 °C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 12. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 13. Collector Saturation Region TJ = 25°C V, VOLTAGE (VOLTS) 0.8  V , TEMPERATURE COEFFICIENTS (mV/ °C) 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 1.0 0.5 0 +25°C TO +125°C −
55 °C TO +25°C −
0.5 +25°C TO +125°C −
1.0 −
55 °C TO +25°C VB FOR VBE(sat) −
1.5 −
2.0 200 VC FOR VCE(sat) 0 Figure 14. “ON” Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 15. Temperature Coefficients http://onsemi.com 5 180 200 NST3906DXV6T1, NST3906DXV6T5 INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.3 0.45 1.0 1.35 0.5 0.5 Dimensions in mm SOT-563 SOT-563 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-563 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-563 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. TJ(max) - TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C - 25°C 833°C/W = 150 milliwatts The 833°C/W for the SOT-563 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-563 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device Thermal Clad is a registered trademark of the Bergquist Company. http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A ISSUE H 6 1 SCALE 4:1 DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD DATE 26 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOT−563, 6 LEAD CASE 463A ISSUE H DATE 26 JAN 2021 GENERIC MARKING DIAGRAM* XX MG 1 XX = Specific Device Code M = Month Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON11126D SOT−563, 6 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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