NST848BF3T5G

NST848BF3T5G NPN General Purpose Transistor The NST848BF3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER NST848BF3T5G Symbol VCEO VCBO VEBO IC Value 30 30 5.0 100 Unit Vdc Vdc Vdc mAdc 1 3 2 • • • • • hFE, 200−450 Low VCE(sat), ≤ 0.25 V Reduces Board Space This is a Halide−Free Device This is a Pb−Free Device MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead 3 Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) RYJL (Note 2) TJ, Tstg Max 290 2.3 432 347 2.8 360 143 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C/W °C Y M SOT−1123 CASE 524AA STYLE 1 MARKING DIAGRAM YM = Device Code = Date Code ORDERING INFORMATION Device NST848BF3T5G Package Shipping† SOT−1123 8000/Tape & Reel (Pb−Free) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 100 mm2 1 oz, copper traces. 2. 500 mm2 1 oz, copper traces. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 January, 2009 − Rev. 0 1 Publication Order Number: NST848BF3/D NST848BF3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA) Collector − Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) Collector − Base Breakdown Voltage (IC = 10 mA) Emitter − Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0 mA, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) 0.18 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN (V) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.0001 −55°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 0 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 25°C VCE(sat) = 150°C IC/IB = 10 600 150°C (5.0 V) 500 400 300 25°C (5.0 V) 25°C (1.0 V) 150°C (1.0 V) fT Cobo Cibo NF 100 − − − − − − − − 4.5 10 10 MHz pF pF dB hFE − − 200 − − − − 580 − 150 290 − − 0.7 0.9 660 − − 450 0.25 0.6 − − 700 770 V V mV (VCB = 30 V) (VCB = 30 V, TA = 150°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 30 30 30 5.0 − − − − − − − − − − − − 15 5.0 V V V V nA mA Symbol Min Typ Max Unit VCE(sat) VBE(sat) VBE(on) 200 −55°C (5.0 V) 100 −55°C (1.0 V) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. DC Current Gain vs. Collector Current http://onsemi.com 2 NST848BF3T5G 1.0 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 25°C IC/IB = 10 −55°C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 25°C VCE = 2.0 V −55°C 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current 1.0 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 10 mA 0.0001 0.001 0.01 30 mA 50 mA IC = 100 mA 7.0 Cibo, INPUT CAPACITANCE (pF) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0 Figure 4. Base Emitter Turn−On Voltage vs. Collector Current Cib 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region 2.5 Cobo, OUTPUT CAPACITANCE (pF) 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0 Cob Figure 6. Input Capacitance 5 10 15 20 25 30 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance http://onsemi.com 3 NST848BF3T5G PACKAGE DIMENSIONS SOT−1123 CASE 524AA−01 ISSUE A b1 1 2 D −X− −Y− 3 E b 0.08 (0.0032) X Y A e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b b1 c D E e HE L MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.10 0.15 0.20 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.35 0.95 1.00 1.05 0.05 0.10 0.15 INCHES NOM 0.015 0.008 0.006 0.005 0.031 0.024 0.014 0.037 0.039 0.002 0.004 MIN 0.013 0.006 0.004 0.003 0.030 0.022 MAX 0.016 0.010 0.008 0.007 0.033 0.026 0.041 0.006 c L HE SOLDERING FOOTPRINT* 0.35 0.30 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.25 0.90 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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