BC857BTT1G
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 which is
designed for low power surface mount applications.
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Features
COLLECTOR
3
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
This is a Pb−Free Device
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
−45
V
Collector−Base Voltage
VCBO
−50
V
Emitter−Base Voltage
VEBO
−5.0
V
Collector Current − Continuous
IC
−100
mAdc
Collector Current − Peak
IC
−200
mAdc
Symbol
Max
Unit
200
mW
1.6
mW/°C
600
°C/W
Rating
3
CASE 463
SOT−416
STYLE 1
2
1
THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
PD
3F
RqJA
PD
300
mW
2.4
mW/°C
RqJA
400
°C/W
TJ, Tstg
−55 to
+150
°C
November, 2014 − Rev. 4
G
G
3F = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary
depending upon manufacturing location.
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
© Semiconductor Components Industries, LLC, 2014
MARKING DIAGRAM
M
Characteristic
1
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
BC857BTT1/D
BC857BTT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
−45
−
−
−50
−
−
−50
−
−
−5.0
−
−
−
−
−
−
−15
−4.0
−
220
150
290
−
475
−
−
−
−
−0.3
−0.65
−
−
−0.7
−0.9
−
−
−0.6
−
−
−
−0.75
−0.82
fT
100
−
−
MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cob
−
−
4.5
pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
Characteristic
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
V(BR)CES
Collector −Base Breakdown Voltage
(IC = −10 mA)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ICBO
V
V
V
V
nA
mA
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
(IC = −2.0 mA, VCE = −5.0 V)
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
−
V
V
V
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BC857BTT1G
TYPICAL CHARACTERISTICS
-1.0
1.5
TA = 25°C
-0.9
VCE = -10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
-0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
-0.7
VBE(on) @ VCE = -10 V
-0.6
-0.5
-0.4
-0.3
-0.2
0.3
VCE(sat) @ IC/IB = 10
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
IC, COLLECTOR CURRENT (mAdc)
0
-0.1 -0.2
-100 -200
Figure 1. Normalized DC Current Gain
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -200 mA
IC = -100 mA
IC = -20 mA
-0.4
0
-0.02
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-10 -20
-0.1
-1.0
IB, BASE CURRENT (mA)
-0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-10
-1.0
IC, COLLECTOR CURRENT (mA)
-100
Figure 4. Base−Emitter Temperature Coefficient
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
-100
-50
Figure 2. “Saturation” and “On” Voltages
-2.0
-0.8
-0.5 -1.0 -2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mAdc)
-20 -30 -40
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
BC857BTT1G
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (s)
Figure 7. Thermal Response
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 8 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk)
may be calculated from the data in Figure 7. At high case
or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by the secondary breakdown.
-200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
-100
TA = 25°C
-50
TJ = 25°C
BC558
BC557
BC556
-10
-5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-1.0
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 8. Active Region Safe Operating Area
ORDERING INFORMATION
Device
BC857BTT1G
NSVBC857BTT1G*
Package
Shipping†
SOT−416
(PB−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE G
3
1
2
DATE 07 AUG 2015
SCALE 4:1
−E−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
b 3 PL
0.20 (0.008)
e
DIM
A
A1
b
C
D
E
e
L
HE
−D−
1
M
D
HE
C
0.20 (0.008) E
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.065
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.060 0.063 0.067
MIN
0.027
0.000
0.006
0.004
0.061
0.027
GENERIC
MARKING DIAGRAM*
A1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
XX M
G
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
1
XX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.508
0.020
0.787
0.031
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15184C
SC−75/SOT−416
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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