NTB30N06L

NTP30N06L, NTB30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level N–Channel TO–220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications http://onsemi.com • • • • Power Supplies Converters Power Motor Controls Bridge Circuits 30 AMPERES 60 VOLTS RDS(on) = 46 mΩ N–Channel D Value 60 60 "15 "20 30 15 90 88.2 0.59 –55 to +175 101 Adc Apk W W/°C °C mJ TO–220AB CASE 221A STYLE 5 2 3 Unit Vdc Vdc Vdc VGS VGS ID ID IDM PD TJ, Tstg EAS G 4 S 1 2 3 D2PAK CASE 418B STYLE 2 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 10 MΩ) Gate–to–Source Voltage – Continuous – Non–Repetitive (tpv10 ms) Drain Current – Continuous @ TA = 25°C – Continuous @ TA = 100°C – Single Pulse (tpv10 µs) Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.0 Vdc, L = 0.3 mH IL(pk) = 26 A, VDS = 60 Vdc) Thermal Resistance – Junction–to–Case Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain °C/W RθJC TL 1.7 260 °C NTx30N06L LLYWW 1 Gate 2 Drain 3 Source 1 Gate NTx30N06L LLYWW 2 Drain 3 Source NTx30N06L x LL Y WW = Device Code = P or B = Location Code = Year = Work Week ORDERING INFORMATION Device NTP30N06L NTB30N06L NTB30N06LT4 Package TO–220AB D2PAK D2PAK Shipping 50 Units/Rail 50 Units/Rail 800/Tape & Reel © Semiconductor Components Industries, LLC, 2002 1 March, 2002 – Rev. 1 Publication Order Number: NTP30N06L/D NTP30N06L, NTB30N06L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Note 1.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (Note 1.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) Static Drain–to–Source On–Resistance (Note 1.) (VGS = 5.0 Vdc, ID = 15 Adc) Static Drain–to–Source On–Voltage (Note 1.) (VGS = 5.0 Vdc, ID = 30 Adc) (VGS = 5.0 Vdc, ID = 15 Adc, TJ = 150°C) Forward Transconductance (Note 1.) (VDS = 7.0 Vdc, ID = 15 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 30 Adc, Vd Ad .0 Vdc) 1. VGS = 5.0 Vdc) (Note 1.) SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage Reverse Recovery Time (IS = 30 Adc, VGS = 0 Vdc, Ad Vd dIS/dt = 100 A/µs) (Note 1.) 100 A/ s) 1. Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. (IS = 30 Adc, VGS = 0 Vdc) (Note 1.) (IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C) VSD trr ta tb QRR – – – – – – 1.01 1.03 50 32 17 0.082 1.2 – – – – – µC Vdc ns (VDD = 30 Vdc, ID = 30 Adc, 30 Vdc, 30 Adc, VGS = 5.0 Vdc, RG = 9.1 Ω) (Note 1.) td(on) tr td(off) tf QT Q1 Q2 – – – – – – – 10 200 15.6 62 16 3.9 10 20 400 30 120 32 – – nC ns (VDS = 25 Vd VGS = 0 Vdc, Vdc, Vd 1.0 MHz) f = 1.0 MHz) Ciss Coss Crss – – – 810 260 80 1150 370 115 pF VGS(th) 1.0 – RDS(on) – VDS(on) – – gFS – 1.3 1.06 21 1.7 – – mhos 38 46 Vdc 1.7 4.8 2.0 – Vdc mV/°C mΩ V(BR)DSS 60 – IDSS – – IGSS – – – – 1.0 10 ±100 nAdc 71.8 69 – – Vdc mV/°C µAdc Symbol Min Typ Max Unit http://onsemi.com 2 NTP30N06L, NTB30N06L 60 VGS = 10 V ID, DRAIN CURRENT (AMPS) 50 40 30 20 10 0 0 4 5 1 2 3 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 6 8V 6V 5.5 V 5V 4.5 V ID, DRAIN CURRENT (AMPS) 50 40 30 20 10 0 1.5 60 VDS ≥ 10 V 4V 3.5 V 3V TJ = 25°C TJ = 100°C TJ = –55°C 6.5 2.5 3.5 4.5 5.5 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) Figure 2. Transfer Characteristics 0.1 VGS = 5 V 0.08 TJ = 100°C 0.06 TJ = 25°C 0.04 TJ = –55°C 0.1 VGS = 10 V 0.08 0.06 TJ = 100°C TJ = 25°C TJ = –55°C 0.04 0.02 0.02 0 0 0 10 20 30 40 50 60 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Gate–to–Source Voltage RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 –50 –25 10 0 25 50 75 100 125 150 175 0 ID = 15 A VGS = 5 V 10000 Figure 4. On–Resistance versus Drain Current and Gate Voltage VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150°C 1000 100 TJ = 100°C 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–to–Source Leakage Current versus Voltage http://onsemi.com 3 NTP30N06L, NTB30N06L VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 2800 2400 C, CAPACITANCE (pF) 2000 1600 1200 800 VDS = 0 V VGS = 0 V TJ = 25°C 6 5 Q1 4 3 2 1 0 0 ID = 30 A TJ = 25°C 4 8 12 16 20 VGS QT Q2 Ciss Crss Ciss Coss 400 0 10 5 VGS 0 VDS 5 Crss 10 15 20 25 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) 32 Figure 8. Gate–to–Source and Drain–to–Source Voltage versus Total Charge VGS = 0 V TJ = 25°C 24 tr t, TIME (ns) 100 tf 10 td(off) td(on) 1 VDS = 30 V ID = 30 A VGS = 5 V 10 RG, GATE RESISTANCE (Ω) 100 16 8 1 0 0.6 0.68 0.76 0.84 0.92 1 1.08 VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 1000 ID, DRAIN CURRENT (AMPS) VGS = 15 V SINGLE PULSE TC = 25°C EAS, SINGLE PULSE DRAIN–TO–SOURCE AVALANCHE ENERGY (mJ) 120 Figure 10. Diode Forward Voltage versus Current ID = 26 A 100 80 60 40 20 0 100 10 10 ms 1 ms 100 µs 10 µs RDS(on) Limit Thermal Limit Package Limit dc 1 0.1 0.1 1 10 100 25 50 75 100 125 150 175 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTP30N06L, NTB30N06L r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE 0.001 0.01 t, TIME (s) t2 DUTY CYCLE, D = t1/t2 0.1 t1 P(pk) RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.1 0.0001 1 10 Figure 13. Thermal Response di/dt IS trr ta tb TIME tp IS 0.25 IS Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 5 NTP30N06L, NTB30N06L PACKAGE DIMENSIONS TO–220 THREE–LEAD TO–220AB CASE 221A–09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 –T– B 4 SEATING PLANE F T S C Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 NTP30N06L, NTB30N06L PACKAGE DIMENSIONS D2PAK CASE 418B–03 ISSUE D C E –B– 4 V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 A 1 2 3 S –T– SEATING PLANE K G D 3 PL 0.13 (0.005) H M J TB M STYLE 2: PIN 1. 2. 3. 4. http://onsemi.com 7 NTP30N06L, NTB30N06L ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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