NTD30N02T4

NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available http://onsemi.com 30 AMPERES 24 VOLTS RDS(on) = 11.2 mW (Typ.) Typical Applications N−Channel Power Supplies Converters Power Motor Controls Bridge Circuits D G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating S Symbol Value Unit Drain−to−Source Voltage VDSS 24 Vdc Gate−to−Source Voltage − Continuous VGS "20 Vdc Drain Current − Continuous @ TA = 25°C − Single Pulse (tpv10 ms) ID IDM 30 100 Total Power Dissipation @ TA = 25°C PD 75 W TJ, Tstg −55 to 150 °C EAS 50 mJ RqJC RqJA RqJA 1.65 67 120 TL 260 Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 24 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 10 A, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds MARKING DIAGRAM Apk 1 2 3 DPAK CASE 369C STYLE 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 in. pad size, (Cu Area 1.127 sq in). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 sq in). 2 1 Drain 3 Gate Source D30N02 = Device Code Y = Year WW = Work Week G = Pb−Free Device °C/W °C 4 Drain 4 Adc YWW D30 N02G • • • • ORDERING INFORMATION Package Shipping† DPAK 75 Units/Rail NTD30N02G DPAK (Pb−Free) 75 Units/Rail NTD30N02T4 DPAK 2500 Tape & Reel Device NTD30N02 NTD30N02T4G DPAK 2500 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 3 1 Publication Order Number: NTD30N02/D NTD30N02 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 24 − 26.5 25.5 − − − − − − − − 0.8 1.0 10 − − ±100 1.0 − 2.1 −4.1 3.0 − − − − − 11.2 20 14.5 14.5 24 gFS − 20 − mhos pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 10 Vdc, ID = 30 Adc) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 4.5 Vdc, ID = 15 Adc) RDS(on) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 15 Adc) Vdc mV/°C mW DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 20 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Transfer Capacitance Ciss − 1000 − Coss − 425 − Crss − 175 − td(on) − 7.0 15 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 20 Vdc, ID = 30 Adc, VGS = 10 Vdc, RG = 2.5 W) Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 20 Vdc, ID = 15 Adc, VGS = 4.5 Vdc, RG = 2.5 W) Fall Time Gate Charge (VDS = 20 Vdc, ID = 30 Adc, VGS = 4.5 Vdc) (Note 3) tr − 28 55 td(off) − 22 35 tf − 12 20 td(on) − 12.5 − tr − 115 − td(off) − 15 − ns ns tf − 17 − QT − 14.4 20 Q1 − 4.0 − Q2 − 8.5 − VSD − − − 0.95 1.10 0.80 1.2 − − Vdc trr − 30 − ns ta − 14.5 − tb − 15.5 − QRR − 0.013 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 15 Adc, VGS = 0 Vdc) (IS = 30 Adc, VGS = 0 Vdc) (Note 3) (IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 30 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 mC NTD30N02 60 VGS = 9 V 50 8V TJ = 25°C 4.6 V 7V 40 6V 30 VDS ≥ 10 V 5V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 60 4.2 V 5.4 V 4V 20 3.4 V 3.6 V 10 50 40 30 20 TJ = 25°C 10 TJ = 100°C 3V 1 2 3 4 5 6 7 8 0.01 3 4 5 6 7 8 9 10 7 TJ = 25°C 0.06 0.05 0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02 0.01 10 20 30 40 50 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 100 IDSS, LEAKAGE (nA) ID = 15 A VGS = 10 V 1.2 1 0.8 −25 0 25 50 75 100 125 150 60 VGS = 0 V TJ = 150°C 10 1 0.1 0.01 TJ = 100°C 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 8 0.07 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1.6 0.6 −50 6 Figure 2. Transfer Characteristics 0.02 1.4 5 Figure 1. On−Region Characteristics 0.03 2 4 3 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID = 15 A TJ = 25°C 0 2 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 0 1 0.04 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 24 NTD30N02 C, CAPACITANCE (pF) 2500 Ciss 2000 VDS = 0 V VGS = 0 V TJ = 25°C Crss 1500 Ciss 1000 Coss 500 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4 QT Q1 16 Q2 VGS 3 12 2 1 0 8 ID = 30 A VDS = 20 V VGS = 4.5 V TJ = 25°C 0 4 16 4 8 12 QG, TOTAL GATE CHARGE (nC) 0 1000 VDS = 20 V ID = 30 A VGS = 10 V t, TIME (ns) 20 VDS VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 5 100 td(off) tf tr 10 td(on) 1 1 Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 10 RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS 15 IS, SOURCE CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation VGS = 0 V TJ = 25°C 12 9 6 3 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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