NTD5406N

NTD5406N Power MOSFET Features 40 V, 70 A, Single N−Channel, DPAK • • • • Low RDS(on) High Current Capability Low Gate Charge These are Pb−Free Devices V(BR)DSS 40 V http://onsemi.com ID MAX (Note 1) 70 A Applications RDS(ON) TYP 8.7 mΩ @ 10 V • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current − RqJC (Note 1) Power Dissipation − RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25°C TC = 125°C TC = 25°C PD IDM TJ, TSTG IS EAS Symbol VDSS VGS ID Value 40 ±20 70 40 100 150 −55 to 175 63.5 450 W Units V V A N−Channel D G S 4 A tp = 10 ms MARKING DIAGRAM 1 YWW 54 06NG Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 30 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C A mJ 12 3 DPAK CASE 369C STYLE 2 Y WW 5406N G TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. = Year = Work Week = Specific Device Code = Pb−Free Device THERMAL RESISTANCE RATINGS (Note 1) Parameter Junction−to−Case (Drain) Symbol RθJC Max 1.5 Units °C/W ORDERING INFORMATION Device NTD5406NG NTD5406NT4G Package DPAK (Pb−Free) DPAK (Pb−Free) Shipping† 75 Units / Rail 2500 / Tape & Reel 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 May, 2009 − Rev. 2 1 Publication Order Number: NTD5406N/D NTD5406N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD tRR ta tb QRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 10 A TJ = 25°C TJ = 125°C VGS = 5.0 V, VDD = 20 V, ID = 30 A, RG = 2.5 W VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5 W VGS = 10 V, VDS = 32 V, ID = 30 A VGS = 0 V, f = 1.0 MHz, VDS = 32 V VGS = 10 V, ID = 30 A VGS = 5.0 V, ID = 10 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge 1375 370 160 45 2.0 5.4 20 2500 700 300 nC pF VGS = 10 V, ID = 10 A VGS = 0 V, VDS = 40 V TJ = 25°C TJ = 100°C VGS = 0 V, ID = 250 mA 40 42 1.0 10 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±30 V VGS = VDS, ID = 250 mA 1.5 −7.0 8.7 13.2 19 3.5 V mV/°C 10 17 mW S SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 7.2 57 30 67 ns SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 15 147 20 29 ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 10 A 0.82 0.67 46 24 22 65 nC ns 1.1 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD5406N TYPICAL PERFORMANCE CURVES 80 ID, DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 VGS = 7 V to 10 V TJ = 25°C 80 6V 5V 4.8 V 4.6 V 4.4 V 4.2 V 4V 3.8 V 3.6 V 9 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 TJ = 100°C TJ = 25°C TJ = −55°C 4 3 5 1 2 6 7 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 8 VDS ≥ 10 V Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.03 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 10 Figure 2. Transfer Characteristics 0.025 0.02 ID = 30 A TJ = 25°C TJ = 25°C VGS = 5 V 0.015 0.01 VGS = 10 V 0.005 3 4 5 6 7 8 9 10 20 30 40 50 60 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 10000 ID = 10 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 175°C 100 10 TJ = 100°C 1 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTD5406N TYPICAL PERFORMANCE CURVES 3600 3000 C, CAPACITANCE (pF) 2400 Crss 1800 Ciss 1200 600 0 10 Crss 0 5 5 VGS VDS 10 15 20 25 30 35 40 Coss VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS = 0 V VGS = 0 V Ciss TJ = 25°C 12 QT 9 VDS VGS 36 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 27 6 QGS QGD 18 3 ID = 30 A TJ = 25°C 0 20 40 10 30 QG, TOTAL GATE CHARGE (nC) 9 0 0 50 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDS = 32 V ID = 30 A VGS = 10 V t, TIME (ns) 100 tf tr td(off) 10 td(on) 30 25 20 15 10 5 0 0.4 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.5 0.7 0.6 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTD5406N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− −T− B V R 4 SEATING PLANE C E S A 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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