NTD5406N Power MOSFET
Features
40 V, 70 A, Single N−Channel, DPAK
• • • •
Low RDS(on) High Current Capability Low Gate Charge These are Pb−Free Devices
V(BR)DSS 40 V
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ID MAX (Note 1) 70 A
Applications
RDS(ON) TYP 8.7 mΩ @ 10 V
• Electronic Brake Systems • Electronic Power Steering • Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current − RqJC (Note 1) Power Dissipation − RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25°C TC = 125°C TC = 25°C PD IDM TJ, TSTG IS EAS Symbol VDSS VGS ID Value 40 ±20 70 40 100 150 −55 to 175 63.5 450 W Units V V A
N−Channel D
G S
4 A
tp = 10 ms
MARKING DIAGRAM
1 YWW 54 06NG
Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 30 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
°C
A mJ
12
3
DPAK CASE 369C STYLE 2 Y WW 5406N G
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
= Year = Work Week = Specific Device Code = Pb−Free Device
THERMAL RESISTANCE RATINGS (Note 1)
Parameter Junction−to−Case (Drain) Symbol RθJC Max 1.5 Units °C/W
ORDERING INFORMATION
Device NTD5406NG NTD5406NT4G Package DPAK (Pb−Free) DPAK (Pb−Free) Shipping† 75 Units / Rail 2500 / Tape & Reel
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. 2
1
Publication Order Number: NTD5406N/D
NTD5406N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD tRR ta tb QRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 10 A TJ = 25°C TJ = 125°C VGS = 5.0 V, VDD = 20 V, ID = 30 A, RG = 2.5 W VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5 W VGS = 10 V, VDS = 32 V, ID = 30 A VGS = 0 V, f = 1.0 MHz, VDS = 32 V VGS = 10 V, ID = 30 A VGS = 5.0 V, ID = 10 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge 1375 370 160 45 2.0 5.4 20 2500 700 300 nC pF VGS = 10 V, ID = 10 A VGS = 0 V, VDS = 40 V TJ = 25°C TJ = 100°C VGS = 0 V, ID = 250 mA 40 42 1.0 10 ±100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance
VDS = 0 V, VGS = ±30 V VGS = VDS, ID = 250 mA 1.5 −7.0 8.7 13.2 19
3.5
V mV/°C
10 17
mW
S
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 7.2 57 30 67 ns
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 15 147 20 29 ns
DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 10 A 0.82 0.67 46 24 22 65 nC ns 1.1 V
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTD5406N
TYPICAL PERFORMANCE CURVES
80 ID, DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 VGS = 7 V to 10 V TJ = 25°C 80 6V 5V 4.8 V 4.6 V 4.4 V 4.2 V 4V 3.8 V 3.6 V 9 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 TJ = 100°C TJ = 25°C TJ = −55°C 4 3 5 1 2 6 7 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 8 VDS ≥ 10 V
Figure 1. On−Region Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.03 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 10
Figure 2. Transfer Characteristics
0.025 0.02
ID = 30 A TJ = 25°C
TJ = 25°C
VGS = 5 V
0.015 0.01
VGS = 10 V
0.005
3
4
5
6
7
8
9
10
20
30
40
50
60
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source Voltage
2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 10000 ID = 10 A VGS = 10 V IDSS, LEAKAGE (nA) 1000
Figure 4. On−Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
TJ = 175°C 100
10
TJ = 100°C
1 2
4
6
8
10
12
14
16
18
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage Current vs. Voltage
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NTD5406N
TYPICAL PERFORMANCE CURVES
3600 3000 C, CAPACITANCE (pF) 2400 Crss 1800 Ciss 1200 600 0 10 Crss 0 5 5 VGS VDS 10 15 20 25 30 35 40 Coss VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS = 0 V VGS = 0 V Ciss TJ = 25°C 12 QT 9 VDS VGS 36 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
27
6
QGS
QGD
18
3 ID = 30 A TJ = 25°C 0 20 40 10 30 QG, TOTAL GATE CHARGE (nC)
9
0
0 50
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000 IS, SOURCE CURRENT (AMPS) VDS = 32 V ID = 30 A VGS = 10 V t, TIME (ns) 100 tf tr td(off) 10 td(on) 30 25 20 15 10 5 0 0.4
Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge
VGS = 0 V TJ = 25°C
1
1
10 RG, GATE RESISTANCE (OHMS)
100
0.5 0.7 0.6 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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NTD5406N
PACKAGE DIMENSIONS
DPAK CASE 369C−01 ISSUE B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−−
−T− B V R
4
SEATING PLANE
C E
S
A
1 2 3
Z U
K F L D G
2 PL
J H 0.13 (0.005) T
DIM A B C D E F G H J K L R S U V Z
M
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
SOLDERING FOOTPRINT*
6.20 0.244 3.0 0.118
2.58 0.101
5.80 0.228
1.6 0.063
6.172 0.243
SCALE 3:1
mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTD5406N/D