NTD6415ANL

NTD6415ANL N- Channel Power MOSFET 100 V, 23 A, 56 mΩ, Logic Level Features     Low RDS(on) 100% Avalanche Tested AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 100 V RDS(on) MAX 56 mΩ @ 4.5 V 52 mΩ @ 10 V D ID MAX 23 A MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain--to--Source Voltage Gate--to--Source Voltage -- Continuous Continuous Drain Current Power Dissipation Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 ±20 23 16 83 80 --55 to +175 23 79 W A C A mJ Unit V V A G S tp = 10 ms Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain--to--Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.3 mH, RG = 25 Ω) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds 4 12 3 DPAK CASE 369AA STYLE 2 TL 260 C THERMAL RESISTANCE RATINGS Parameter Junction--to--Case (Drain) -- Steady State Junction--to--Ambient -- Steady State (Note 1) Symbol RθJC RθJA Max 1.8 39 Unit C/W MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain YWW 6415AN LG 1 Gate 2 Drain 3 Source 6415ANL Y WW G = Device Code = Year = Work Week = Pb--Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.  Semiconductor Components Industries, LLC, 2010 March, 2010 - Rev. 0 - 1 Publication Order Number: NTD6415ANL/D NTD6415ANL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain--to--Source Breakdown Voltage Drain--to--Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate--to--Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain--to--Source On--Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate--to--Source Charge Gate--to--Drain Charge Total Gate Charge Turn--On Delay Time Rise Time Turn--Off Delay Time Fall Time Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) td(on) tr td(off) tf VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 23 A TJ = 25C TJ = 125C VGS = 4.5 V, VDD = 80 V, ID = 23 A, RG = 6.1 Ω VGS = 10 V, VDS = 80 V, ID = 23 A VGS = 4.5 V, VDS = 80 V, ID = 23 A VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 10 A VDS = 5.0 V, ID = 10 A CHARGES, CAPACITANCES AND GATE RESISTANCE 1024 156 70 20 1.1 3.1 14 35 11 91 40 71 0.87 0.74 64 40 24 152 nC ns 1.2 V nC ns nC pF VGS = VDS, ID = 250 mA 1.0 4.8 44 43 24 56 52 S 2.0 V mV/C mΩ V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 100 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA VGS = 0 V, ID = 250 mA, TJ = --40C 100 92 115 1.0 100 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = 20 V SWITCHING CHARACTERISTICS (Note 3) DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 23 A 2. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD6415ANLT4G Package DPAK (Pb--Free) Shipping† 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 2 NTD6415ANL 45 40 ID, DRAIN CURRENT (A) 35 30 25 20 15 10 5 0 0 1 2 3 4 VDS, DRAIN--TO--SOURCE VOLTAGE (V) 5 VGS = 10 V 5V 4V TJ = 25C ID, DRAIN CURRENT (A) 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 45 40 35 30 25 20 15 10 5 0 1 TJ = 125C TJ = --55C 2 3 VGS, GATE--TO--SOURCE VOLTAGE (V) 4 TJ = 25C VDS ≥ 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) 0.050 0.048 0.046 0.044 0.042 0.040 RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω) 0.050 0.048 0.046 0.044 0.042 0.040 5 Figure 2. Transfer Characteristics ID = 23 A TJ = 25C TJ = 25C VGS = 4.5 V VGS = 10 V 2 3 4 5 6 7 8 9 10 10 15 ID, DRAIN CURRENT (A) 20 25 Figure 3. On-Region versus Gate Voltage RDS(on), DRAIN--TO--SOURCE RESISTANCE (NORMALIZED) 3.0 2.5 2.0 1.5 1.0 0.5 --50 ID = 23 A VGS = 4.5 V IDSS, LEAKAGE (nA) 10000 VGS, GATE--TO--SOURCE VOLTAGE (V) Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1000 TJ = 125C --25 0 25 50 75 100 125 150 175 100 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN--TO--SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain- -Source Leakage Current -toversus Voltage http://onsemi.com 3 NTD6415ANL VGS, GATE--TO--SOURCE VOLTAGE (V) 2500 2000 1500 1000 500 0 Ciss TJ = 25C VGS = 0 V 10 8 6 4 2 0 Qds QT C, CAPACITANCE (pF) Qgs VDS = 80 V ID = 23 A TJ = 25C Crss Coss 30 40 50 60 70 80 90 0 10 20 100 0 5 10 15 20 25 30 35 VDS, DRAIN--TO--SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) VDS = 80 V ID = 23 A VGS = 4.5 V t, TIME (ns) 100 tf 10 tr 25 20 15 10 5 Figure 8. Gate- -Source Voltage and -toDrain- -Source Voltage versus Total Charge -toTJ = 25C VGS = 0 V td(off) td(on) 1 1 10 RG, GATE RESISTANCE (Ω) 100 0 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 VSD, SOURCE--TO--DRAIN VOLTAGE (V) 125 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current ID = 23 A AVALANCHE ENERGY (mJ) 1000 ID, DRAIN CURRENT (A) 10 ms 10 VGS = 10 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100 VDS, DRAIN--TO--SOURCE VOLTAGE (V) 100 ms 1 ms 10 ms dc 100 75 50 25 0 25 1 0.1 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE 175 http://onsemi.com 4 NTD6415ANL RθJC(t) (C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) 0.1 1 10 Figure 13. Thermal Response http://onsemi.com 5 NTD6415ANL PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE A SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 -----0.035 0.050 0.155 -----MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 -----0.89 1.27 3.93 ------ --TB V R 4 C E S A 1 2 3 Z H U F L D 2 PL J DIM A B C D E F H J L R S U V Z 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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