NTHD3133PF

NTHD3133PF Power MOSFET and Schottky Diode Features -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com MOSFET V(BR)DSS -20 V RDS(on) TYP 64 mW @ -4.5 V 85 mW @ -2.5 V ID MAX -4.4 A • • • • • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics Independent Pinout to each Device to Ease Circuit Design Trench P-Channel for Low On Resistance Ultra Low VF Schottky These are Pb-Free Devices Li-Ion Battery Charging High Side DC-DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products Parameter Symbol VDSS VGS Steady State t≤5s TJ = 25°C TJ = 85°C TJ = 25°C PD TJ = 25°C 2.1 IDM TJ, TSTG IS TL -13 -55 to 150 2.5 260 A °C A °C ID Value -20 ±8.0 -3.2 -2.3 -4.4 1.1 W Units V V A SCHOTTKY DIODE VR MAX 20 V S VF TYP 0.35 V A IF MAX 3.7 A Applications G MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) D P-Channel MOSFET C Schottky Diode 8 ChipFET CASE 1206A STYLE 3 1 Power Dissipation (Note 1) Steady State t≤5s Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) PIN CONNECTIONS 1 8 MARKING DIAGRAM 1 DA M G 2 3 4 8 7 6 5 A 2 7 C C 6 A S 3 SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Steady State t≤5s TJ = 25°C 3.7 A Symbol VRRM VR IF Value 20 20 2.2 Units V V V D D 4 5 G DA = Specific Device Code M = Month Code G = Pb-Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2007 1 October, 2007 - Rev. 0 Publication Order Number: NTHD3133PF/D NTHD3133PF THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient – Steady State (Note 2) Junction-to-Ambient – t ≤ 10 s (Note 2) Symbol RqJA RqJA Max 113 60 Units °C/W °C/W 2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VDS = -16 V, VGS = 0 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = -250 mA -20 -15 -1.0 -5.0 ±100 nA V mV/°C mA Symbol Test Conditions Min Typ Max Units Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On-Resistance VDS = 0 V, VGS = ±8.0 V VGS = VDS, ID = -250 mA VGS = -4.5, ID = -3.2 A VGS = -2.5, ID = -2.2 A VGS = -1.8, ID = -1.0 A VGS(TH) VGS(TH)/TJ RDS(on) -0.45 2.7 64 85 120 8.0 -1.5 80 110 170 V mV/°C mW Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge gFS VDS = -10 V, ID = -2.9 A S CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = -4.5 V, VDS = -10 V, ID = -3.2 A VGS = 0 V, f = 1.0 MHz, VDS = -10 V 680 100 70 7.4 0.6 1.4 2.5 pF nC td(ON) tr td(OFF) tf TJ = 25°C VGS = -4.5 V, VDD = -10 V, ID = -3.2 A, RG = 2.4 W 5.8 11.7 16 12.4 ns VSD tRR ta tb QRR VGS = 0 V, IS = -2.5 A -0.8 13.5 9.5 4.0 6.5 -1.2 V ns VGS = 0 V, IS = -1.0 A , dIS/dt = 100 A/ms nC SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Non-Repetitive Peak Surge Current Symbol VF IR IFSM Test Conditions IF = 0.1 A IF = 1.0 A VR = 10 V VR = 20 V Halfwave, Single Pulse 60 Hz Min Typ Max 0.31 0.365 0.75 2.5 23 A mA Units V 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTHD3133PF TYPICAL P-CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 9 -ID, DRAIN CURRENT (AMPS) 8 7 6 -2.2 V 5 4 3 2 1 0 0 1 2 3 4 5 6 -1.8 V -1.6 V -1.4 V 7 8 9 10 -2 V VGS = -5 V to -3.6 V VGS = -3 V -2.6 V TJ = 25°C -2.4 V -ID, DRAIN CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 0 TC = -55°C 25°C 100°C 3.5 VDS ≥ -10 V -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 3 0.5 1.5 2 2.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.2 0.2 Figure 2. Transfer Characteristics 0.175 0.15 ID = -3.2 A TJ = 25°C TJ = 25°C 0.175 0.15 VGS = -2.5 V 0.125 0.1 0.125 0.1 VGS = -4.5 V 0.075 0.05 1 3 5 2 4 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 0.075 0.05 2 3 4 5 6 7 8 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.4 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 10 -25 0 25 50 75 100 125 150 ID = -3.2 A VGS = -4.5 V -IDSS, LEAKAGE (A) 1000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 100°C 100 2 4 6 8 10 12 14 16 18 20 -TJ, JUNCTION TEMPERATURE (°C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTHD3133PF TYPICAL P-CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 0 V C, CAPACITANCE (pF) 1200 CISS TJ = 25°C -VGS, GATE-TO-SOURCE VOLTAGE (V) 1500 5 QT 4 -V DS 3 QGS QGD 8 -VGS 6 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 900 VDS = 0 V 600 CRSS 2 4 300 COSS 0 5 -VGS 0 -VDS 5 10 15 20 1 ID = -3.2 A TJ = 25°C 0 2 4 6 8 2 0 0 Qg, TOTAL GATE CHARGE (nC) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 -IS, SOURCE CURRENT (AMPS) VDS = -10 V ID = -3.2 A VGS = -4.5 V 100 t, TIME (ns) td(off) tf tr 10 td(on) 5 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C 4 3 2 1 0 0.3 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.6 0.9 1.2 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTHD3133PF TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1 TJ = 150°C 1 TJ = 150°C TJ = 25°C TJ = -55°C 0.20 0.40 0.60 0.80 TJ = 25°C 0.20 0.40 0.60 0.80 0.1 0.00 0.1 0.00 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 11. Typical Forward Voltage 100E-3 IR, REVERSE CURRENT (AMPS) TJ = 150°C 10E-3 IR, MAXIMUM REVERSE CURRENT (AMPS) 100E-3 Figure 12. Maximum Forward Voltage TJ = 150°C 10E-3 TJ = 100°C TJ = 100°C 1E-3 1E-3 100E-6 TJ = 25°C 100E-6 TJ = 25°C 10E-6 0 10 VR, REVERSE VOLTAGE (VOLTS) 10E-6 0 10 VR, REVERSE VOLTAGE (VOLTS) 20 20 Figure 13. Typical Reverse Current PFO, AVERAGE POWER DISSIPATION (WATTS) Figure 14. Maximum Reverse Current IO, AVERAGE FORWARD CURRENT (AMPS) 3.5 freq = 20 kHz 3 2.5 2 1.5 1 0.5 0 25 dc square wave Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 IO, AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = p Ipk/Io = 5 Ipk/Io = 10 Ipk/Io = 20 square wave dc 45 65 85 105 125 145 165 TL, LEAD TEMPERATURE (°C) Figure 15. Current Derating Figure 16. Forward Power Dissipation http://onsemi.com 5 NTHD3133PF DEVICE ORDERING INFORMATION Device NTHD3133PFT1G NTHD3133PFT3G Package ChipFET (Pb-Free) ChipFET (Pb-Free) Shipping† 3000 / Tape & Reel 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTHD3133PF PACKAGE DIMENSIONS D 8 7 6 5 ChipFET CASE 1206A-03 ISSUE G q L 5 6 3 7 2 8 1 HE 1 2 3 4 E 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. DIM A b c D E e e1 L HE q MILLIMETERS NOM MAX 1.05 1.10 0.30 0.35 0.15 0.20 3.05 3.10 1.65 1.70 0.65 BSC 0.55 BSC 0.28 0.35 0.42 1.80 1.90 2.00 5° NOM MIN 1.00 0.25 0.10 2.95 1.55 MIN 0.039 0.010 0.004 0.116 0.061 INCHES NOM 0.041 0.012 0.006 0.120 0.065 0.025 BSC 0.022 BSC 0.011 0.014 0.071 0.075 5° NOM MAX 0.043 0.014 0.008 0.122 0.067 e1 e b c STYLE 3: PIN 1. 2. 3. 4. 5. 6. 7. 8. A A S G D D C C A 0.05 (0.002) 0.017 0.079 SOLDERING FOOTPRINT* 2.032 0.08 0.711 0.028 1.092 0.043 0.178 0.007 0.457 0.018 0.254 0.010 SCALE 20:1 mm inches 0.66 0.026 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ChipFET is a trademark of Vishay Siliconix. FETKY is a registered trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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