NTLJD3115PTAG

NTLJD3115P MOSFET – Power, Dual, P-Channel, WDFN 2X2 mm -20 V, -4.1 A Features www.onsemi.com • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction • 2x2 mm Footprint Same as SC−88 • Lowest RDS(on) Solution in 2x2 mm Package • 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic • • • V(BR)DSS ID MAX (Note 1) 100 mW @ −4.5 V −20 V −4.1 A 135 mW @ −2.5 V Level Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Bidirectional Current Flow with Common Source Configuration This is a Pb−Free Device Applications RDS(on) MAX 200 mW @ −1.8 V S1 S2 G1 G2 D1 P−CHANNEL MOSFET D2 P−CHANNEL MOSFET • Optimized for Battery and Load Management Applications in • • Portable Equipment Li−Ion Battery Charging and Protection Circuits High Side Load Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C t≤5s TA = 25°C Steady State t≤5s Continuous Drain Current (Note 2) Steady State Symbol Value Unit VDSS −20 V VGS ±8.0 V ID −3.3 A TA = 85°C WDFN6 CASE 506AN Pin 1 W 1.5 PIN CONNECTIONS 2.3 ID TA = 85°C −2.3 D1 A S1 1 6 D1 5 G2 4 S2 −1.6 PD 0.71 W G1 2 IDM −20 A D2 3 TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS −1.9 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Power Dissipation (Note 2) Pulsed Drain Current TA = 25°C tp = 10 ms Operating Junction and Storage Temperature D2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. © Semiconductor Components Industries, LLC, 2013 May, 2019 − Rev. 7 1 6 2 JDMG 5 G 3 4 JD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) −4.1 TA = 25°C MARKING DIAGRAM D1 −2.4 PD TA = 25°C D2 1 (Top View) ORDERING INFORMATION Device Package Shipping† NTLJD3115PT1G WDFN6 (Pb−Free) 3000/Tape & Reel NTLJD3115PTAG WDFN6 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTLJD3115P/D NTLJD3115P THERMAL RESISTANCE RATINGS Parameter Symbol Max Junction−to−Ambient – Steady State (Note 3) RqJA 83 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 177 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 54 Unit SINGLE OPERATION (SELF−HEATED) °C/W DUAL OPERATION (EQUALLY HEATED) Junction−to−Ambient – Steady State (Note 3) RqJA 58 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 133 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 40 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu). www.onsemi.com 2 °C/W NTLJD3115P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, Ref to 25°C Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VDS = −16 V, VGS = 0 V V 9.95 mV/°C TJ = 25°C −1.0 TJ = 85°C −10 IGSS VDS = 0 V, VGS = ±8.0 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA Negative Gate Threshold Temperature Coefficient VGS(TH)/TJ mA ±100 nA −1.0 V ON CHARACTERISTICS (Note 5) Drain−to−Source On−Resistance RDS(on) Forward Transconductance gFS −0.4 −0.7 2.44 mV/°C VGS = −4.5, ID = −2.0 A 75 100 mW VGS = −2.5, ID = −2.0 A 101 135 VGS = −1.8, ID = −1.6 A 150 200 VDS = −5.0 V, ID = −2.0 A 6.0 S 531 pF CHARGES, CAPACITANCES AND GATE RESISTANCE CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = −10 V 91 56 QG(TOT) 5.5 Threshold Gate Charge QG(TH) 0.7 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 1.4 RG 8.8 W td(ON) 6.0 ns tr 11 Gate Resistance VGS = −4.5 V, VDS = −10 V, ID = −2.0 A 6.2 nC Total Gate Charge 1.0 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(OFF) VGS = −4.5 V, VDD = −5.0 V, ID = −1.0 A, RG = 6.0 W 21 tf 8.0 td(ON) 6.0 tr td(OFF) VGS = −4.5 V, VDD = −10 V, ID = −2.0 A, RG = 2.0 W tf ns 12 19 6.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time VSD VGS = 0 V, IS = −1.0 A TJ = 25°C −0.75 TJ = 125°C −0.64 tRR ta tb −1.0 V 12.6 VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A QRR 7.0 5.6 5.0 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 ns nC NTLJD3115P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 5 TJ = 25°C −ID, DRAIN CURRENT (AMPS) 4.5 −1.8 V 4 3.5 −1.7 V 3 2.5 −1.6 V 2 −1.5 V 1.5 1 −1.4 V 0.5 −1.3 V −1.2 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = −1.9 V to −6 V 0.5 0 1.5 1 2 3 2.5 4 3.5 VDS ≥ 10 V 4 3 2 TJ = 25°C 1 TJ = 125°C 0 4.5 0 Figure 2. Transfer Characteristics 0.09 TJ = 100°C 0.08 TJ = 25°C 0.07 0.06 TJ = −55°C 0.05 0.04 1.0 1.5 2.5 2.0 0.15 TJ = 25°C VGS = −2.5 V 0.1 VGS = −4.5 V 0.05 0 1 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 10000 1.2 1.0 0.8 25 50 75 100 5 Figure 4. On−Resistance versus Drain Current and Gate Voltage ID = −2.2 A VGS = −4.5 V 0 4 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current −25 3 2 −ID, DRAIN CURRENT (AMPS) 0.6 −50 3 Figure 1. On−Region Characteristics VGS = −4.5 V 1.4 2.5 2 1.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.1 1.6 TJ = −55°C 1 0.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) 5 125 150 VGS = 0 V TJ = 150°C 1000 TJ = 100°C 100 10 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage www.onsemi.com 4 20 NTLJD3115P VDS = 0 V VGS = 0 V C, CAPACITANCE (pF) 1000 TJ = 25°C Ciss 800 600 400 Crss Coss 200 0 5 VGS 0 VDS 10 5 15 20 QT 4 0 −Is, SOURCE CURRENT (AMPS) 100 tf tr td(off) td(on) 10 RG, GATE RESISTANCE (OHMS) 100 10 QGD 8 0 1 5 2 3 4 QG, TOTAL GATE CHARGE (nC) VGS = 0 V 2 1.5 1 0.5 TJ = 150°C 0.1 0.2 0.3 0.4 TJ = 25°C 0.5 0.6 0.7 0.8 0.9 1.0 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current TC = 25°C TJ = 150°C SINGLE PULSE 10 ms 100 ms 10 ms *See Note 2 on Page 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0 2.5 1 ms 0.01 6 Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 1 0.1 4 ID = −2.2 A TJ = 25°C 0 0 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance −ID, DRAIN CURRENT (AMPS) t, TIME (ns) QGS 3 VDD = −15 V ID = −2.2 A VGS = −4.5 V 12 VGS 1 1000 1 VDS 2 Figure 7. Capacitance Variation 1 16 3 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 20 5 -V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1200 -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) dc 10 1 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 5 NTLJD3115P EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1000 100 D = 0.5 0.2 0.1 10 *See Note 2 on Page 1 P(pk) 0.05 0.02 1 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 Figure 12. Thermal Response www.onsemi.com 6 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJA(t) 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN ISSUE H DATE 25 JAN 2022 GENERIC MARKING DIAGRAM* 1 XX M XX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON20861D WDFN6 2x2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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