NTLJF3117PTAG

MOSFET – Power, P-Channel, Schottky Diode, mCool 2x2 mm -20 V, -4.1 A, 2.0 A NTLJF3117P www.onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent • • • • • Thermal Conduction 2x2 mm Footprint Same as SC−88 Package Design Independent Pinout Provides Circuit Design Flexibility Low Profile (< 0.8 mm) for Easy Fit in Thin Environment High Current Schottky Diode: 2 A Current Rating This is a Pb−Free Device MOSFET 100 mW @ −4.5 V −20 V SCHOTTKY DIODE VR MAX VF TYP IF MAX 30 V 0.47 V 2.0 A • Optimized for Portable Applications like Cell Phones, Digital Cameras, Media Players, etc. DC−DC Buck Circuit Li−Ion Battery Applications Color Display and Camera Flash Regulators D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8.0 V ID −3.3 A Continuous Drain Current (Note 1) Steady State TA = 25°C t≤5s TA = 25°C Power Dissipation (Note 1) Steady State TA = 85°C Power Dissipation (Note 2) Pulsed Drain Current Steady State ID TA = 85°C A −2.3 −1.6 PD 0.71 W IDM −20 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS −1.9 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C tp = 10 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. 1 6 2 JHMG 5 3 4 G WDFN6 CASE 506AN 1 2.3 Operating Junction and Storage Temperature SCHOTTKY DIODE MARKING DIAGRAM W 1.5 TA = 25°C TA = 25°C P−CHANNEL MOSFET −4.1 PD TA = 25°C K S −2.4 t≤5s Continuous Drain Current (Note 2) A G Symbol Parameter −4.1 A 135 mW @ −2.5 V 200 mW @ −1.8 V Applications • • • ID MAX (Note 1) RDS(on) MAX V(BR)DSS JH = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS A 1 N/C 2 K 6 K 5 G 4 S D D 3 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2006 February, 2021 − Rev. 3 1 Publication Order Number: NTLJF3117P/D NTLJF3117P SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit VRRM 30 V DC Blocking Voltage VR 30 V Average Rectified Forward Current IF 2.0 A Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) RqJA 83 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 54 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 177 Peak Repetitive Reverse Voltage THERMAL RESISTANCE RATINGS Parameter °C/W 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, Ref to 25°C Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA Negative Threshold Temperature Coefficient VGS(TH)/TJ VDS = −16 V, VGS = 0 V V 9.95 TJ = 25°C mV/°C −1.0 TJ = 85°C mA −10 ±100 nA −1.0 V ON CHARACTERISTICS (Note 5) Drain−to−Source On−Resistance RDS(on) Forward Transconductance gFS −0.4 −0.7 2.44 mV/°C VGS = −4.5, ID = −2.0 A 75 100 mW VGS = −2.5, ID = −2.0 A 101 135 VGS = −1.8, ID = −1.6 A 150 200 VDS = −5.0 V, ID = −2.0 A 3.1 S 531 pF CHARGES, CAPACITANCES AND GATE RESISTANCE CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate Resistance VGS = 0 V, f = 1.0 MHz, VDS = −10 V 91 56 5.5 6.2 nC 0.7 VGS = −4.5 V, VDS = −10 V, ID = −2.0 A 1.0 1.4 RG 8.8 W td(ON) 5.2 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = −4.5 V, VDD = −5.0 V, ID = −1.0 A, RG = 6.0 W tf 13.2 13.7 19.1 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTLJF3117P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time td(ON) tr Turn−Off Delay Time Fall Time td(OFF) ns 5.5 15 VGS = −4.5 V, VDD = −10 V, ID = −2.0 A, RG = 2.0 W 19.8 tf 21.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage Reverse Recovery Time Charge Time VSD Reverse Recovery Time TJ = 25°C −0.75 TJ = 125°C −0.64 tRR ta Discharge Time VGS = 0 V, IS = −1.0 A tb −1.0 V 16.2 10.6 VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A ns 5.6 QRR 5.7 nC 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Typ Max Unit Maximum Instantaneous Forward Voltage VF IF = 0.1 A Min 0.34 0.39 V IF = 1.0 A 0.47 0.53 Maximum Instantaneous Reverse Current IR VR = 30 V 17 20 VR = 20 V 3.0 8.0 VR = 10 V 2.0 4.5 mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted) Parameter Symbol Test Conditions Typ Max Unit Maximum Instantaneous Forward Voltage VF IF = 0.1 A Min 0.22 0.35 V IF = 1.0 A 0.40 0.50 Maximum Instantaneous Reverse Current IR VR = 30 V 0.22 2.5 VR = 20 V 0.11 1.6 VR = 10 V 0.06 1.2 Typ Max Unit V mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted) Parameter Symbol Test Conditions Min Maximum Instantaneous Forward Voltage VF IF = 0.1 A 0.2 0.29 IF = 1.0 A 0.4 0.47 Maximum Instantaneous Reverse Current IR VR = 30 V 2.0 20 VR = 20 V 1.1 10.9 VR = 10 V 0.63 8.4 Typ Max mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Capacitance Symbol Test Conditions C VR = 5.0 V, f = 1.0 MHz Min 7. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 8. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz cu. 9. Pulse Test: pulse width v 300 ms, duty cycle v2%. 10. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 38 Unit pF NTLJF3117P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 5 TJ = 25°C −ID, DRAIN CURRENT (AMPS) 4.5 −1.8 V 4 3.5 −1.7 V 3 2.5 −1.6 V 2 −1.5 V 1.5 1 −1.4 V 0.5 −1.3 V −1.2 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = −1.9 V to −6 V 0.5 0 1.5 1 2 3 2.5 4 3.5 VDS ≥ 10 V 4 3 2 TJ = 25°C 1 TJ = 125°C 0 4.5 0 Figure 2. Transfer Characteristics 0.09 TJ = 100°C 0.08 TJ = 25°C 0.07 0.06 TJ = −55°C 0.05 0.04 1.0 1.5 2.5 2.0 0.15 TJ = 25°C VGS = −2.5 V 0.1 VGS = −4.5 V 0.05 0 1 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 10000 1.2 1.0 0.8 25 50 75 100 5 Figure 4. On−Resistance versus Drain Current and Gate Voltage ID = −2.2 A VGS = −4.5 V 0 4 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current −25 3 2 −ID, DRAIN CURRENT (AMPS) 0.6 −50 3 Figure 1. On−Region Characteristics VGS = −4.5 V 1.4 2.5 2 1.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.1 1.6 TJ = −55°C 1 0.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) 5 125 150 VGS = 0 V TJ = 150°C 1000 TJ = 100°C 100 10 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage www.onsemi.com 4 20 NTLJF3117P VDS = 0 V VGS = 0 V C, CAPACITANCE (pF) 1000 TJ = 25°C Ciss 800 600 400 Crss Coss 200 0 5 VGS 0 VDS 10 5 15 20 QT 4 0 −Is, SOURCE CURRENT (AMPS) 100 tf tr td(off) td(on) 10 RG, GATE RESISTANCE (OHMS) 100 10 QGD 8 0 1 5 2 3 4 QG, TOTAL GATE CHARGE (nC) VGS = 0 V 2 1.5 1 0.5 TJ = 150°C 0.1 0.2 0.3 0.4 TJ = 25°C 0.5 0.6 0.7 0.8 0.9 1.0 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current TC = 25°C TJ = 150°C SINGLE PULSE 10 ms 100 ms 10 ms *See Note 2 on Page 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0 2.5 1 ms 0.01 6 Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 1 0.1 4 ID = −2.2 A TJ = 25°C 0 0 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance −ID, DRAIN CURRENT (AMPS) t, TIME (ns) QGS 3 VDD = −15 V ID = −2.2 A VGS = −4.5 V 12 VGS 1 1000 1 VDS 2 Figure 7. Capacitance Variation 1 16 3 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 20 5 -V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1200 -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) dc 10 1 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 5 NTLJF3117P r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1000 100 D = 0.5 0.2 0.1 10 *See Note 2 on Page 1 P(pk) 0.05 0.02 1 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 Figure 12. Thermal Response www.onsemi.com 6 1 RqJA(t) = r(t) RqJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJA(t) 10 100 1000 NTLJF3117P 10 I F, INSTANTANEOUS FORWARD CURRENT (AMPS) I F , INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) TJ = 85°C 1.0 TJ = 125°C TJ = 25°C TJ = −55°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ = 85°C TJ = 125°C 0.1 0.1 0.2 TJ = 25°C 0.3 0.4 0.5 0.7 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM FORWARD VOLTAGE (VOLTS) Figure 13. Typical Forward Voltage Figure 14. Maximum Forward Voltage 100E-3 100E-3 10E-3 TJ = 125°C 1.0E-3 TJ = 85°C 100E-6 10E-6 TJ = 25°C 0 10 TJ = 125°C 10E-3 1.0E-3 TJ = 85°C 100E-6 1.0E-6 100E-9 0.9 1.0E+0 I R , MAXIMUM REVERSE CURRENT (AMPS) 1.0E+0 I R , REVERSE CURRENT (AMPS) 10 20 30 TJ = 25°C 10E-6 1.0E-6 100E-9 0 10 20 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Typical Reverse Current Figure 16. Maximum Reverse Current 30 ORDERING INFORMATION Device NTLJF3117PT1G Package Shipping† WDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN ISSUE H DATE 25 JAN 2022 GENERIC MARKING DIAGRAM* 1 XX M XX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON20861D WDFN6 2x2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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