NTLJF4156NTAG

NTLJF4156N MOSFET – Power, N-Channel with Schottky Barrier Diode, Schottky Diode, mCool, WDFN 2X2 mm http://onsemi.com MOSFET 30 V, 4.6 A, 2.0 A V(BR)DSS 70 mW @ 4.5 V Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal • • • • • ID MAX (Note 1) RDS(on) MAX Conduction Co−Packaged MOSFET and Schottky For Easy Circuit Layout RDS(on) Rated at Low VGS(on) Levels, VGS = 1.5 V Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Low VF Schottky This is a Pb−Free Device 30 V 125 mW @ 1.8 V 250 mW @ 1.5 V SCHOTTKY DIODE VR MAX VF TYP IF MAX 30 V 0.47 V 2.0 A Applications • DC−DC Converters • Li−Ion Battery Applications in Cell Phones, PDA’s, Media Players • Color Display and Camera Flash Regulators D Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±8.0 V 3.7 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TJ = 25°C TJ = 85°C 2.7 t≤5s TJ = 25°C 4.6 Steady State t≤5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) ID PD TJ = 25°C TJ = 25°C Steady State W 1.5 2.3 ID TJ = 85°C A 2.5 IDM 20 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS 2.4 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C tp = 10 ms Operating Junction and Storage Temperature Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2006 May, 2019 − Rev. 4 N−CHANNEL MOSFET SCHOTTKY DIODE MARKING DIAGRAM 1 6 2 JLMG 5 3 4 G 1 WDFN6 CASE 506AN JL = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS 0.71 Pulsed Drain Current K S 1.8 PD TJ = 25°C A G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter 4.6 A 90 mW @ 2.5 V 1 A 1 N/C 2 K 6 K 5 G 4 S D D 3 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Publication Order Number: NTLJF4156N/D NTLJF4156N 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. http://onsemi.com 2 NTLJF4156N SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit VRRM 30 V DC Blocking Voltage VR 30 V Average Rectified Forward Current IF 2.0 A Symbol Max Unit Junction−to−Ambient – Steady State (Note 3) RqJA 83 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 54 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 180 Peak Repetitive Reverse Voltage THERMAL RESISTANCE RATINGS Parameter °C/W 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, Ref to 25°C Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8.0 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA Gate Threshold Temperature Coefficient VGS(TH)/TJ VDS = 24 V, VGS = 0 V V 18.1 TJ = 25°C mV/°C 1.0 TJ = 85°C mA 10 100 nA 1.0 V ON CHARACTERISTICS (Note 5) Drain−to−Source On−Resistance Forward Transconductance 0.4 0.7 2.8 RDS(on) gFS mV/°C VGS = 4.5, ID = 2.0 A 47 70 mW VGS = 2.5, ID = 2.0 A 56 90 VGS = 1.8, ID = 1.8 A 88 125 VGS = 1.5, ID = 1.5 A 133 250 VDS = 10 V, ID = 2.0 A 4.5 S 427 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 15 V 51 32 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 1.24 RG 3.7 Gate Resistance 5.4 VGS = 4.5 V, VDS = 15 V, ID = 2.0 A 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 6.5 nC 0.5 0.8 W NTLJF4156N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time td(ON) tr Turn−Off Delay Time Fall Time td(OFF) ns 4.8 9.2 VGS = 4.5 V, VDD = 15 V, ID = 2.0 A, RG = 2.0 W 14.2 tf 1.7 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage Reverse Recovery Time Charge Time VSD Reverse Recovery Time TJ = 25°C 0.78 TJ = 125°C 0.62 tRR ta Discharge Time VGS = 0 V, IS = 2.0 A tb 1.2 V 10.5 7.6 VGS = 0 V, dISD/dt = 100 A/ms, IS = 2.0 A ns 2.9 QRR 5.0 nC 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Typ Max Unit Maximum Instantaneous Forward Voltage VF IF = 0.1 A 0.34 0.39 V IF = 1.0 A 0.47 0.53 Maximum Instantaneous Reverse Current IR VR = 30 V 17 20 VR = 20 V 3.0 8.0 VR = 10 A 2.0 4.5 Parameter Min mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted) Parameter Symbol Test Conditions Typ Max Unit Maximum Instantaneous Forward Voltage VF IF = 0.1 A Min 0.22 0.35 V IF = 1.0 A 0.40 0.50 Maximum Instantaneous Reverse Current IR VR = 30 V 0.22 2.5 VR = 20 V 0.11 1.6 VR = 10 V 0.06 1.2 Typ Max Unit V mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted) Parameter Symbol Test Conditions Min Maximum Instantaneous Forward Voltage VF IF = 0.1 A 0.2 0.29 IF = 1.0 A 0.4 0.47 Maximum Instantaneous Reverse Current IR VR = 30 V 2.0 20 VR = 20 V 1.1 10.9 VR = 10 V 0.63 8.4 Typ Max mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Capacitance Symbol Test Conditions C VR = 5.0 V, f = 1.0 MHz Min 7. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 8. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz cu. 9. Pulse Test: pulse width v 300 ms, duty cycle v2%. 10. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 4 38 Unit pF NTLJF4156N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 5 6 TJ = 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 1.6 V 4 3 1.5 V 2 1.4 V 1.3 V 1 1.2 V 0 1 3 2 4 5 TJ = 25°C TJ = 100°C 0 1 0.5 TJ = −55°C 1.5 2.5 2 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 100°C 0.06 0.05 TJ = 25°C 0.04 TJ = −55°C 0.03 0.02 1.0 1.5 2.5 2.0 TJ = 25°C 0.13 0.12 0.11 0.1 VGS = 1.8 V 0.09 0.08 0.07 VGS = 2.5 V 0.06 VGS = 4.5 V 0.05 0.04 1 2 3 4 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Gate Voltage 100,000 ID = 2 A VGS = 4.5 V 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 5 VGS = 0 V 10,000 TJ = 150°C 1000 TJ = 100°C 100 10 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 5 3 0.14 ID, DRAIN CURRENT (AMPS) IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) VGS = 4.5 V 1.4 4 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.07 1.6 VDS ≥ 10 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = 1.7 V to 8 V NTLJF4156N C, CAPACITANCE (pF) 1000 TJ = 25°C 800 600 Ciss 400 Crss 200 Coss 0 5 VGS 0 VDS 5 10 15 20 25 30 QT 12 3 9 2 QGS 1 0 IS, SOURCE CURRENT (AMPS) td(off) tf tr 10 td(on) 10 RG, GATE RESISTANCE (OHMS) 0 1 100 10 4 5 2 3 QG, TOTAL GATE CHARGE (nC) VGS = 0 V TJ = 125°C TJ = 150°C 2 TJ = 25°C 1 0.6 See Note 2 on Page 2 10 ms 100 ms 1 ms 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.9 Figure 10. Diode Forward Voltage versus Current 1 0.01 0 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) SINGLE PULSE TC = 25°C TJ = 150°C 0.1 6 Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 0 0.3 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance −ID, DRAIN CURRENT (AMPS) 1 3 ID = 2.0 A TJ = 25°C 3 100 QGD 6 1000 VDD = 15 V ID = 2.0 A VGS = 4.5 V VGS VDS Figure 7. Capacitance Variation t, TIME (ns) 15 4 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 18 5 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS = VGS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) dc 10 1 100 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 6 NTLJF4156N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 100 D = 0.5 0.2 0.1 0.05 10 *See Note 2 on Page 1 P(pk) 0.02 1 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.1 0.01 t, TIME (S) Figure 12. Thermal Response http://onsemi.com 7 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 10 100 1000 NTLJF4156N 10 I F, INSTANTANEOUS FORWARD CURRENT (AMPS) I F , INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) TJ = 85°C 1.0 TJ = 125°C TJ = 25°C TJ = −55°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ = 85°C TJ = 125°C 0.1 0.1 0.2 0.3 TJ = 25°C 0.4 0.5 0.7 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM FORWARD VOLTAGE (VOLTS) Figure 13. Typical Forward Voltage Figure 14. Maximum Forward Voltage I R , MAXIMUM REVERSE CURRENT (AMPS) 100E-3 100E-3 10E-3 TJ = 125°C 1.0E-3 TJ = 85°C 100E-6 10E-6 TJ = 25°C 10 0 TJ = 125°C 10E-3 1.0E-3 TJ = 85°C 100E-6 1.0E-6 100E-9 0.9 1.0E+0 1.0E+0 I R , REVERSE CURRENT (AMPS) 10 20 30 TJ = 25°C 10E-6 1.0E-6 100E-9 0 10 20 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Typical Reverse Current Figure 16. Maximum Reverse Current 30 ORDERING INFORMATION Package Shipping† NTLJF4156NT1G WDFN6 (Pb−Free) 3000 / Tape & Reel NTLJF4156NTAG WDFN6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). http://onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 506AN ISSUE H DATE 25 JAN 2022 GENERIC MARKING DIAGRAM* 1 XX M XX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON20861D WDFN6 2x2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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