NTLJF4156N
MOSFET – Power,
N-Channel with Schottky
Barrier Diode, Schottky
Diode, mCool, WDFN
2X2 mm
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MOSFET
30 V, 4.6 A, 2.0 A
V(BR)DSS
70 mW @ 4.5 V
Features
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
•
•
•
•
•
ID MAX (Note 1)
RDS(on) MAX
Conduction
Co−Packaged MOSFET and Schottky For Easy Circuit Layout
RDS(on) Rated at Low VGS(on) Levels, VGS = 1.5 V
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
Low VF Schottky
This is a Pb−Free Device
30 V
125 mW @ 1.8 V
250 mW @ 1.5 V
SCHOTTKY DIODE
VR MAX
VF TYP
IF MAX
30 V
0.47 V
2.0 A
Applications
• DC−DC Converters
• Li−Ion Battery Applications in Cell Phones, PDA’s, Media Players
• Color Display and Camera Flash Regulators
D
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±8.0
V
3.7
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TJ = 25°C
TJ = 85°C
2.7
t≤5s
TJ = 25°C
4.6
Steady
State
t≤5s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
ID
PD
TJ = 25°C
TJ = 25°C
Steady
State
W
1.5
2.3
ID
TJ = 85°C
A
2.5
IDM
20
A
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
2.4
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
tp = 10 ms
Operating Junction and Storage Temperature
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2006
May, 2019 − Rev. 4
N−CHANNEL MOSFET
SCHOTTKY DIODE
MARKING
DIAGRAM
1
6
2 JLMG 5
3
4
G
1
WDFN6
CASE 506AN
JL = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
0.71
Pulsed Drain Current
K
S
1.8
PD
TJ = 25°C
A
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
4.6 A
90 mW @ 2.5 V
1
A
1
N/C
2
K
6
K
5
G
4
S
D
D
3
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Publication Order Number:
NTLJF4156N/D
NTLJF4156N
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
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2
NTLJF4156N
SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
VRRM
30
V
DC Blocking Voltage
VR
30
V
Average Rectified Forward Current
IF
2.0
A
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
RqJA
83
Junction−to−Ambient – t ≤ 5 s (Note 3)
RqJA
54
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
180
Peak Repetitive Reverse Voltage
THERMAL RESISTANCE RATINGS
Parameter
°C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, Ref to 25°C
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
Gate Threshold
Temperature Coefficient
VGS(TH)/TJ
VDS = 24 V, VGS = 0 V
V
18.1
TJ = 25°C
mV/°C
1.0
TJ = 85°C
mA
10
100
nA
1.0
V
ON CHARACTERISTICS (Note 5)
Drain−to−Source On−Resistance
Forward Transconductance
0.4
0.7
2.8
RDS(on)
gFS
mV/°C
VGS = 4.5, ID = 2.0 A
47
70
mW
VGS = 2.5, ID = 2.0 A
56
90
VGS = 1.8, ID = 1.8 A
88
125
VGS = 1.5, ID = 1.5 A
133
250
VDS = 10 V, ID = 2.0 A
4.5
S
427
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
51
32
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.24
RG
3.7
Gate Resistance
5.4
VGS = 4.5 V, VDS = 15 V,
ID = 2.0 A
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
6.5
nC
0.5
0.8
W
NTLJF4156N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
td(ON)
tr
Turn−Off Delay Time
Fall Time
td(OFF)
ns
4.8
9.2
VGS = 4.5 V, VDD = 15 V,
ID = 2.0 A, RG = 2.0 W
14.2
tf
1.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
Reverse Recovery Time
Charge Time
VSD
Reverse Recovery Time
TJ = 25°C
0.78
TJ = 125°C
0.62
tRR
ta
Discharge Time
VGS = 0 V, IS = 2.0 A
tb
1.2
V
10.5
7.6
VGS = 0 V, dISD/dt = 100 A/ms,
IS = 2.0 A
ns
2.9
QRR
5.0
nC
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.34
0.39
V
IF = 1.0 A
0.47
0.53
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
17
20
VR = 20 V
3.0
8.0
VR = 10 A
2.0
4.5
Parameter
Min
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
Min
0.22
0.35
V
IF = 1.0 A
0.40
0.50
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
0.22
2.5
VR = 20 V
0.11
1.6
VR = 10 V
0.06
1.2
Typ
Max
Unit
V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.2
0.29
IF = 1.0 A
0.4
0.47
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
2.0
20
VR = 20 V
1.1
10.9
VR = 10 V
0.63
8.4
Typ
Max
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Capacitance
Symbol
Test Conditions
C
VR = 5.0 V, f = 1.0 MHz
Min
7. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
8. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz cu.
9. Pulse Test: pulse width v 300 ms, duty cycle v2%.
10. Switching characteristics are independent of operating junction temperatures.
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4
38
Unit
pF
NTLJF4156N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
5
6
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
1.6 V
4
3
1.5 V
2
1.4 V
1.3 V
1
1.2 V
0
1
3
2
4
5
TJ = 25°C
TJ = 100°C
0
1
0.5
TJ = −55°C
1.5
2.5
2
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 100°C
0.06
0.05
TJ = 25°C
0.04
TJ = −55°C
0.03
0.02
1.0
1.5
2.5
2.0
TJ = 25°C
0.13
0.12
0.11
0.1
VGS = 1.8 V
0.09
0.08
0.07
VGS = 2.5 V
0.06
VGS = 4.5 V
0.05
0.04
1
2
3
4
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100,000
ID = 2 A
VGS = 4.5 V
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
5
VGS = 0 V
10,000
TJ = 150°C
1000
TJ = 100°C
100
10
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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5
3
0.14
ID, DRAIN CURRENT (AMPS)
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS = 4.5 V
1.4
4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.07
1.6
VDS ≥ 10 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = 1.7 V to 8 V
NTLJF4156N
C, CAPACITANCE (pF)
1000
TJ = 25°C
800
600
Ciss
400
Crss
200
Coss
0
5
VGS
0
VDS
5
10
15
20
25
30
QT
12
3
9
2
QGS
1
0
IS, SOURCE CURRENT (AMPS)
td(off)
tf
tr
10
td(on)
10
RG, GATE RESISTANCE (OHMS)
0
1
100
10
4
5
2
3
QG, TOTAL GATE CHARGE (nC)
VGS = 0 V
TJ = 125°C
TJ = 150°C
2
TJ = 25°C
1
0.6
See Note 2 on Page 2
10 ms
100 ms
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.9
Figure 10. Diode Forward Voltage versus Current
1
0.01
0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SINGLE PULSE
TC = 25°C
TJ = 150°C
0.1
6
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
0
0.3
100
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
−ID, DRAIN CURRENT (AMPS)
1
3
ID = 2.0 A
TJ = 25°C
3
100
QGD
6
1000
VDD = 15 V
ID = 2.0 A
VGS = 4.5 V
VGS
VDS
Figure 7. Capacitance Variation
t, TIME (ns)
15
4
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
18
5
VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VDS = VGS = 0 V
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
dc
10
1
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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6
NTLJF4156N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1000
100 D = 0.5
0.2
0.1
0.05
10
*See Note 2 on Page 1
P(pk)
0.02
1
0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.1
0.01
t, TIME (S)
Figure 12. Thermal Response
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7
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
10
100
1000
NTLJF4156N
10
I F, INSTANTANEOUS FORWARD CURRENT (AMPS)
I F , INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 85°C
1.0
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ = 85°C
TJ = 125°C
0.1
0.1
0.2
0.3
TJ = 25°C
0.4
0.5
0.7
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM FORWARD VOLTAGE (VOLTS)
Figure 13. Typical Forward Voltage
Figure 14. Maximum Forward Voltage
I R , MAXIMUM REVERSE CURRENT (AMPS)
100E-3
100E-3
10E-3
TJ = 125°C
1.0E-3
TJ = 85°C
100E-6
10E-6
TJ = 25°C
10
0
TJ = 125°C
10E-3
1.0E-3
TJ = 85°C
100E-6
1.0E-6
100E-9
0.9
1.0E+0
1.0E+0
I R , REVERSE CURRENT (AMPS)
10
20
30
TJ = 25°C
10E-6
1.0E-6
100E-9
0
10
20
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Typical Reverse Current
Figure 16. Maximum Reverse Current
30
ORDERING INFORMATION
Package
Shipping†
NTLJF4156NT1G
WDFN6
(Pb−Free)
3000 / Tape & Reel
NTLJF4156NTAG
WDFN6
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x2, 0.65P
CASE 506AN
ISSUE H
DATE 25 JAN 2022
GENERIC
MARKING DIAGRAM*
1
XX M
XX = Specific Device Code
M = Date Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON20861D
WDFN6 2x2, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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